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1999 - Motorola B13

Abstract: 28F160F3 28F800F3 MCF5307 Intel AP-695
Text: Output Enabled for TA when CE=0 ASYN. RESET: ADV=0 AND CE=0 => S0 TA=1 TA=1 S0 S7 S6 TA=0 S1 TA=1 TA=0 S5 S2 S4 TA=0 TA=1 S3 TA=0 NOTE: See Appendix B for PLD


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PDF MCF5307 MCF5307 Motorola B13 28F160F3 28F800F3 Intel AP-695
2015 - Not Available

Abstract: No abstract text available
Text: = 25 °C 167 TC = 80 °C 93 A W Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT Collector to , °C - 0.95 - - - 6.6 m - - 0.73 V TJ = 150 °C mA V Ta1 , resistance (per diode) Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Junction to case thermal resistance (per switch , torque (M4) 2 - 3 Nm Weight - 45 - g Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Case , Typical Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT Output Characteristics, VGE = 15 V Fig. 1 - Typical DbpA -DbpB


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PDF VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2014 - Not Available

Abstract: No abstract text available
Text: = 25 °C 167 TC = 80 °C 93 A W Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT Collector to , °C - 0.95 - - - 6.6 m - - 0.73 V TJ = 150 °C mA V Ta1 , resistance (per diode) Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Junction to case thermal resistance (per switch , torque (M4) 2 - 3 Nm Weight - 45 - g Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Case , . 1 - Typical DbpA -DbpB Bypass Diode Forward Characteristics Fig. 3 - Typical Ta1 - Ta2 - Tb1 -


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PDF VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2014 - Not Available

Abstract: No abstract text available
Text: VRRM applied 250 TC = 25 °C 167 TC = 80 °C 93 A W Ta1 - Ta2 - Tb1 - Tb2 PFC , °C - 0.95 - - - 6.6 m - - 0.73 V TJ = 150 °C mA V Ta1 , diode) Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Junction to case thermal resistance (per switch) Da1 - Da2 - , torque (M4) 2 - 3 Nm Weight - 45 - g Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT - Case , . 1 - Typical DbpA -DbpB Bypass Diode Forward Characteristics Fig. 3 - Typical Ta1 - Ta2 - Tb1 -


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PDF VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Not Available

Abstract: No abstract text available
Text: 1 ho r-o —»% 1— CO 0 O S' t—1 _J _J —3 lo' -^ - =3- CD Ts —7 fâ , €” OJ: <=3 ti. a t—1 — _J f T fD ISO 5a' - 3 ^CJ 3 H- «5s Cb ro i/i —K â


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SS316L

Abstract: SS316 IEC1131-3 FR1151GP FR1151DP 1151LT 1151HP 1151DR 1151DP DN80
Text: 01 024KPa 4 316L C-276 316 C-276 316 C-276 O '4NFr 54mm'2N M20 , 0-6-40MPa () 4-20mADC 4-20mADC 4-20nADC HARf () SS 316 SS 316L SS 316 SS 316 SS 316 SS 316L SS 316 SS 316 SS 316 SS 316 SS 316 SS 316 , 316 SS 316L 22 SS 316 SS 316 SS 316L M1 0-lO0 M3 LCD B1 2-in B2 B3 2 , 52 SS 316 SS 316L 22 SS 316 SS 316 SS 316L M1 0-lO0 M3 LCD B1 2-in B2 B3


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PDF FRll51 010mm 420mA 0-016KPa 0-40MPao 4-20mADC( 12-45VDC 115lDP 10MPa l15lDR SS316L SS316 IEC1131-3 FR1151GP FR1151DP 1151LT 1151HP 1151DR 1151DP DN80
BPW42

Abstract: carel ir 32 carel TSUS3400 bpw 81 t bpw 82
Text: TELEFUNKEN ELECTRONIC ■¡miLltFlMlKIKl electronic CrMtw« TKtaotoges 17E D ■ÛSEDD^b 0D0Û434 BPW42 Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits Features: • Plastic case 0 3 mm ( T—1 ) • Suitable for visible and near infrared radiation • Compatible with IR diode TSUS 3400 Dimensions in mm • High sensitivity • Wide angle of half sensitivity • Axial terminals Surfte« not flat Angle of half sensitivity ±


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PDF BPW42 carel ir 32 carel TSUS3400 bpw 81 t bpw 82
MD5031T

Abstract: 8885A ICC500 WMD5031T
Text: ÌK A n E « ¡SB ft É: m. $ If a m m A TK A n m t es - t—1 ÇO o co If « s $ If m -R a jog f? « B , co o co 05 o z o - t—1 o o. E CS 1 Q. E ra -t—' o > n|p •Ob, tfP If 1» *- cu co ■sr m


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PDF WMD5031T MD5031TÂ MD5031T 8885A ICC500
ST50

Abstract: No abstract text available
Text: DI5CLDSUTC AND DISSEMINATION TO ALL TflirD PARTIES, DATE: 12-22-97 DWN: CHK D: APPD: SCALE: N/A T—1 3/4


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PDF 0-D10" ST509F3L60 50LDERING PRDCE55. ST50
40C1

Abstract: No abstract text available
Text: SCALE: N/A DWN: CHK'D: APPD: T—1 3/4 (5mm) LOW PROFILE PHOTOTDARLINGTON, WITH DAYLIGHT FILTER


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PDF PT5063L40 40C1
1995 - lm 7085

Abstract: lm 7085 circuit diagram AR 5414 AP-316 intel 28F256 flash intel 28F256 epl* Thermal printer 80C186 programming 2147H SRAM 5C032
Text: AP- 316 APPLICATION NOTE Using Flash Memory for In-System Reprogrammable Nonvolatile Storage , DETAILED SYSTEM SCHEMATICS F-1 AP- 316 NOTE See Appendix A for OPB design considerations 1 0 , own CPU 1 AP- 316 for resumption of data acquisition This is useful in an advanced , Flash Memory Pinouts 2 AP- 316 Byte-Wide Flash Memory in 32-Pin PLCC 292046 ­ 27 Figure 2B Flash Memory Pinouts 3 AP- 316 Table 1 Command Register Instructions Command Bus


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PDF AP-316 LA19d LA18d LA17d LA16d lm 7085 lm 7085 circuit diagram AR 5414 AP-316 intel 28F256 flash intel 28F256 epl* Thermal printer 80C186 programming 2147H SRAM 5C032
BUW22AP

Abstract: BUW22P BUW22 BUW22A
Text: a / tù >f


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PDF jmS37 BUW22/22P BUW22A/22AP BUW22, BUW22A BUW22P, BUW22AP O-220 BUW22/P BUW22A/AP BUW22P BUW22
2011 - Not Available

Abstract: No abstract text available
Text: / 316 Cable (–P only) –RA = Right Angle (–P only) –BH1 –PN1 = 4-Hole Panel Mount RG 174 / 316 Cable (–J–ST only) = Bulkhead RG 174 / 316 Cable (–J–ST only) (11


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PDF RF-11
2011 - LTV-814S-TP

Abstract: ltv844 814 8 pin ic
Text: reel packaging : LTV-814S-TA LTV-814S- TA1 LTV-814S-TP LTV-824S-TA LTV-824S- TA1 * Safety approval UL , -814S-TA : LTV-814S- TA1 : Description Tape wide Pitch of sprocket holes Distance of compartment Distance of , ( . 316 ) Part No. : LTV-814 824 844 (M, S, S-TA, S-TA1, S-TP) Series BNS-OD-C131/A4 Page : 8 of , LTV-824S-TA : LTV-824S- TA1 : Description Tape wide Pitch of sprocket holes Distance of


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PDF 000Vrms LTV-814 LTV-824 LTV-844 LTV-814M LTV-824M LTV-844M LTV-814S LTV-824S LTV-844S LTV-814S-TP ltv844 814 8 pin ic
Not Available

Abstract: No abstract text available
Text: of the serial data transfer, the DS1996 em ploys three address registers, called TA1 , TA2 and E/S (Figure 6). Registers TA1 and TA2 m ust be loaded with the target address to which the data will be , the data, the DS1996 sends the requested target address TA1 and TA2 and the contents of the E/S , be followed exactly by the data of the three address registers TA1 , TA2 and E/S as the m aster has , T A D D R E S S ( TA1 ) T7 T6 T5 T4 T3 T2 T1 TO TA R G E T A D D R E S S


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PDF DS1996 64Kbit
2002 - GTCY08R20-24P(FT)(027)(LC)

Abstract: No abstract text available
Text: -35) External Springs 302 Stainless Steel 302/ 316 Stainless Steel 302 Stainless Steel 316 Stainless Steel (HFC-35) Internal Springs 316 Stainless Steel 316 Stainless Steel 316 Stainless Steel 316 Stainless Steel (HFC-35) Panel Nut Brass-Nickel Plated Brass-Nickel Plated or


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PDF FT-HFC-12, FT-PMC-12, FT-PLC-12, FT-SMC-12 FT-FFC-35 FT-HFC-35 L-110 GTCY08R20-24P(FT)(027)(LC)
Intel AP-401

Abstract: AP-316 29204* intel lm2391
Text: m u APPLICATION NOTE AP- 316 October 1990 Using Flash Memory for In-System , .6-212 3.1.6 Vpp Circuitry and Trace Layout .6-213 3.2 Communications - Getting , .6-220 6 6-205 AP- 316 1.0 INTRODUCTION Intel's ETOX t m II (EPRO M tunnel oxide) flash mem ory , memory process has patents pending. 6-206 AP- 316 for resumption of data acquisition. This is , overview of Intel's flash mem ory features and explains how they facilitate ISW de sign. 6-207 AP- 316


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PDF AP-316 LA19d, LA18d, LA17d, LA19d LA18d LA17d LA16d Intel AP-401 AP-316 29204* intel lm2391
MQ 6 SENSOR pin diagram

Abstract: MQ 5 SENSOR pin diagram SAS670 SAS660S SAS660 lift control but sas SAS 660 H300 rara
Text: 8.2 n F 5Mfi 10MQ 82nF 5MÍ5 10MÍÍ " TA1 läJ 25mF I—in— 33 pF R p 33 pF 33 pF Htâ


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PDF 660/SAS 16-lead MQ 6 SENSOR pin diagram MQ 5 SENSOR pin diagram SAS670 SAS660S SAS660 lift control but sas SAS 660 H300 rara
tube 1R5

Abstract: 1r5 tube SB-316 SBOA-318 APS-310
Text: 20 22 24 28 32 40 48 14 24 28 32 40 48 50 64 AP SB-306 SB-308 SB-314* N /R SB-314 SB- 316 SB-318 SB , -640 N /R N /R N /R N /R N /R SB-964* N /R SB-964* SB -964 APA N /R SBOA-308 N /R N /R SBOA-314 SBOA- 316 , FIG.1) APE N /R N /R N /R N /R SBE-314 SBE- 316 SBE-318 N /R N /R N /R N /R N /R N /R N /R N /R N /R N , SBO-308 N /R N /A SBO-314 SBO- 316 SBO-318 SB 0-320 SBO-324* SBO-324 N /R SBO-422 N /A N /R N /R N /R N , -308* SBS-308 SBS-314* N /R SBS-314 SBS- 316 SBS-318 SB-320 N /R SB-324 N /R SB-422 N /R N /R N /R N /R N /R


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PDF
M1 Z

Abstract: DO204MB
Text: 400mA ` Maximum DC Reverse Current Ta- 25°C at Rated DC Blocking Voltage Ta-1 00°C Typical Junction , ) Lead Lengths, P.C. Board Mounted. * JEDEC Registered Values - 316 - C Tï m IN S TAN TAN EO U S


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PDF 1N645 1N649 -204MB MIL-S-19500 M1 Z DO204MB
2014 - Not Available

Abstract: No abstract text available
Text: (–CA1 & –CA2 only) = Right Angle = RG 174/ 316 Cable = Plug –ST –CA2 = Straight = RG 178 Cable –CA1S = RG 316 Cable, Double Shield –HF = 30µ" (0,76 µm) Gold center , outer contact (–CA1 & –CA2 only) = Right Angle (–P only) = RG 174/ 316 Cable = Jack , –CA1S E F (4,50) .177 (4,78) .188 (4,50) .177 = RG 316 Cable, Double Shield (15,50


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PDF RF-13 10JAN14)
2011 - Not Available

Abstract: No abstract text available
Text: Cable = 10µ" (0,25µm) Gold on contact, Nickel on body = Straight = RG 174 / 316 Cable , Bulkhead, RG 174 / 316 Cable (–J & –ST only) Samtec


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PDF RF-11 RF058
2011 - Not Available

Abstract: No abstract text available
Text: center contact, 3µ" (0,08µm) Gold outer contact = RG 174 / 316 Cable (–P only) = Bulkhead , RG 174 / 316 Cable (–J–ST only) (8,00) .315 Hex. (11,00) .433 Hex. –BH2 , only) (12,60) .496 (16,00) .630 = 4-Hole Panel Mount RG 316 Cable, (–J–ST only


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PDF F-211-1
SB-424

Abstract: SB528
Text: /R N /R N /R N /R SBE-9E N /R SB0-308 N /R N /A S B O - 314 S BO - 316 SBO -318 SB0-320 SBO , /R N /R N /R N /R N /R N /R N /R SBOA-308 SBS-308* SBS-308 SBS-314* N /R SBS-314 SBS- 316 SBS , -422 SB-424 SB-614* SB-614 SB - 6 1 6 SB - 6 1 8 ®®®® ® ® ® ® ® ® © 0 SBOA-314 SB O A - 316 SB O


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PDF -O--31 APO--322-XXX APS--306-XXX APS--31 SB-624 SB-528 SB-640* SB-964* SB-964 SB-424 SB528
2011 - Not Available

Abstract: No abstract text available
Text: Cable = 10µ" (0,25µm) Gold on contact, Nickel on body = Straight = RG 174 / 316 Cable , Bulkhead, RG 174 / 316 Cable (–J & –ST only) Samtec


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PDF F-211-1 RF058
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