The Datasheet Archive

AN569 datasheet (6)

Part Manufacturer Description Type PDF
AN569 STMicroelectronics PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS Original PDF
AN569 On Semiconductor Transient Thermal Resistance - General Data and its Use Scan PDF
AN5693 Panasonic Luminance,Chroma and Sync. Signals Processing ICwith Built-in I2Cbus Interfacefor PAL/NTSC Color-TV Original PDF
AN5693K Panasonic Luminance, chroma And sync. signals processing IC (with built-in I2Cbus interface)For PAL/NTSC color-TV Original PDF
AN5693K Panasonic Luminance,Chroma and Sync. Signals Processing IC (with Built-in I2C- Original PDF
AN5693K Panasonic Luminance,Chroma and Sync. Signals Processing IC (with Built-in I2C-bus Interface)for PAL-NTSC Color-TV Original PDF

AN569 Datasheets Context Search

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2013 - fm tuner

Abstract: No abstract text available
Text: AN569 S i 4 8 3 1 / 3 5 / 3 6 / 2 0 / 2 4 / 2 5 - D E M O B OARD TE S T P R O C E D U R E 1 , Rev. 0.3 2/13 Copyright © 2013 by Silicon Laboratories AN569 AN569 5 6 60/ JHQHUDWRU  , (add 6 dB). *Note: EMF = Electro Motive Force 2 Rev. 0.3 AN569 3. FM Testing Procedure 3.1 , Si4831/35/36/20/24/25 DEMO Board User's Guide. Rev. 0.3 3 AN569 3.2. FM Sensitivity 3.2.1 , sensitivity should be below 10 dBµVemf. 4 Rev. 0.3 AN569 3.3. FM Image Rejection 3.3.1


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PDF AN569 Si4831/35/36/20/24/25-DEMO Si4831/20 Si4835/36/24/25 Si4831/35/36/20/24/25 fm tuner
2001 - "Phase Discriminator"

Abstract: AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS , figures 1 and 2, respectively (seen on page 2). March 2001 1/8 AN569 - APPLICATION NOTE Figure , refer to the note on the following page) 2/8 AN569 - APPLICATION NOTE Note: The computer-driven , acceptable region, a noticeable, if not 3/8 AN569 - APPLICATION NOTE catastrophic, change in electrical , Output Shunt Inductor Seperation (mils) 4/8 AN569 - APPLICATION NOTE Other aspects of transistor


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PDF AN569 "Phase Discriminator" AM81214-060 AM82731-050 AN569 MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor study
2001 - "Phase Discriminator"

Abstract: Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS , figures 1 and 2, respectively (seen on page 2). March 2001 1/8 AN569 - APPLICATION NOTE Figure , refer to the note on the following page) 2/8 AN569 - APPLICATION NOTE Note: The computer-driven , acceptable region, a noticeable, if not 3/8 AN569 - APPLICATION NOTE catastrophic, change in , Output Shunt Inductor Seperation (mils) 4/8 AN569 - APPLICATION NOTE Other aspects of transistor


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PDF AN569 "Phase Discriminator" Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
2001 - 2N6309

Abstract: pn junction DIODE 1N4001 Graph of Length vs Thermal resistance of Heat sink Mullard technical communications 2N3053 characteristic curves 2N5983 equivalent AN569 pin details of 2N5190 2N5974 mpsu07 equivalent
Text: AN569 /D Transient Thermal Resistance General Data and Its Use Prepared by: Bill Roehr and Bryce , Number: AN569 /D AN569 /D response, Appendix C provides data for a number of packages having , AN569 /D TJ + 0.59 PPK 1 Peak Power (Watts) D = t/p = 5/20 = 0.25. A curve for D = 0.25 is not , TJ Time Figure 3. Application of Superposition Principle http://onsemi.com 3 AN569 /D , ) Collector­Emitter Voltage AN569 /D toff tf At this point it is observed that the thermal response curves


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PDF AN569/D r14525 2N6309 pn junction DIODE 1N4001 Graph of Length vs Thermal resistance of Heat sink Mullard technical communications 2N3053 characteristic curves 2N5983 equivalent AN569 pin details of 2N5190 2N5974 mpsu07 equivalent
2001 - AN569

Abstract: coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT all transistor AM82731-050 AM81214-060 transistor study
Text: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS , , respectively (seen on page 2). March 2001 1/8 AN569 - APPLICATION NOTE Figure 1: A Typical Automated , AN569 - APPLICATION NOTE Note: The computer-driven setup tests a device over a specified frequency , 3/8 AN569 - APPLICATION NOTE catastrophic, change in electrical characteristics would be , (mils) 4/8 AN569 - APPLICATION NOTE Other aspects of transistor assembly considered in this


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PDF AN569 AN569 coupler s-band high power N6226982-L-0384 all transistor datasheet Hewlett-Packard transistor microwave MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT all transistor AM82731-050 AM81214-060 transistor study
2011 - 4831b30gu

Abstract: 4835B30GU SI4835-B30-GU Si4831-B30 si4831 Si4835 si4830 Si483x-B 4835b si4835 an555
Text: . " AN569 : Si4831/35-DEMO " Volume=maximumforalltests. RF=98.1MHz 2. "AN555:Si483x-B "Silicon , From powerdown / 5 : 1. " AN569 : Si4831/35-DEMO " Volume = maximum for all tests. RF = , Si4831/35-B30 10. EN55020 AN555: Si483x-B AN569 : Si4831/35-DEMO Si4831


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PDF Si4831/35-B30 Si4835 EN55020 Si4831/35-B30CMOS// Si4831/-B AN569: Si4831/35-DEMO 4831b30gu 4835B30GU SI4835-B30-GU Si4831-B30 si4831 Si4835 si4830 Si483x-B 4835b si4835 an555
motorola an569

Abstract: No abstract text available
Text: , (SEE AN-569 ) ZeJA(t) = r(D » Tj(pk) - Ta = P(pk) ZeJA(t) I I 11111 L J_ I I I ,1 III _ .1 ' , AN-569 . Figure 15. Typical Collector Leakage Current - ■b3b7255 O O ^ T


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PDF BCW69LT1 BCW70LT1 -236A AN-569. b3b7255 motorola an569
motorola an569 thermal

Abstract: 2N5087 motorola an569
Text: CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t-| (SEE AN-569 ) Z&)A(t) = r(fl · r 8JA T j(pk , more information, see AN-569 . Figure 19. Typical Collector Leakage Current 2-46 Motorola


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PDF 2N5087 AN-569. motorola an569 thermal 2N5087 motorola an569
MPS6523 equivalent

Abstract: No abstract text available
Text: TOR POWER PULSE TRAIN SHOWN READ TIME AT t i (SEE AN-569 ) ZeJA(t) = '"(t) * R e jA TJ(pk) - Ta = P(pk , CHARACTERISTICS DUTY CYCLE, D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t j (SEE AN-569 ) z 0JA(t) = , temperature is therefore AT = r(t) x P(pk) x R0JA - °-22 x 2.0 x 200 = 88°C. For more information, see AN-569


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PDF PS6523 MPS6521 MPS6523 AN-569. MPS6523 equivalent
m136

Abstract: 6M136
Text: 0.2 0.5 1.0 t 2.0 5.0 10 20 50 100 200 READ TIME AT t 1 (SEE AN­569 , information, see AN­569 . M13­6/6 -


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PDF BCW69/70LT1 OT-23 m136 6M136
2001 - MPS5172

Abstract: MPS 5172
Text: AT t1 (SEE AN­569 ) Zq JA(t) = r(t) w Rq JA TJ(pk) ­ TA = P(pk) Zq JA(t) 0.01 0.01 0.02 Figure 8 , information, see ON Semiconductor Application Note AN569 /D, available from the Literature Distribution Center


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PDF MPS5172 MPS 5172
MPSA70

Abstract: AN569
Text: , D = t-|/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t( (SEE AN-569 ) Z0JA(t) = r(t) · , (p|<) x FI0 JA = 0.22 X 2.0 X 200 = 88°C. For more information, see AN-569 . Figure 19. Typical


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PDF MPSA70 O-226AA) AN-569. MPSA70 AN569
motorola an569 thermal

Abstract: AN569
Text: TRAIN SHOWN READ TIME AT t-| (SEE AN-569 ) z 0JA(t) = r(t) · F*0JA TJ(pk)-T A = P(pk)z 0JA(fl J , °C. For more information, see AN-569 . Figure 16A. Motorola Small-Signal Transistors, FETs and Diodes


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PDF 33LT1 PS3904 AN-569. motorola an569 thermal AN569
Not Available

Abstract: No abstract text available
Text: TIME AT ti (SEE AN-569 ) z 6JA(t) = r(t) • f>6JA Tj(pk) - Ta = P(pk) Z0JA(t) i i 11111 0.01 , 88“C. 0 Tj, JUNCTION TEMPERATURE (°C) For more information, see AN-569 . Figure 15


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PDF MMBT5087LT1 OT-23 O-236AB) AN-569. b3b72S5
2006 - MJE13007G

Abstract: SUS CIRCUIT transistor mje13007 equivalent MJE13007 AN951 AN875 AN873 MPF930 MUR105 on semiconductor AN951
Text: 8A TIME 400 V 1 VCC 700 V 1 VCC COLLECTOR VOLTAGE TIME See AN569 for Pulse Power , VCC + N (Vo) + LEAKAGE SPIKE See AN569 for Pulse Power Derating Procedure. TURN-ON (FORWARD BIAS , °C VCC t LEAKAGE SPIKE See AN569 for Pulse Power Derating Procedure. 1 C DUTY CYCLE 10 , 700 V 1 COLLECTOR VOLTAGE Notes: 1 See AN569 for Pulse Power Derating Procedure. http


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PDF MJE13007 MJE13007 O-220 MJE13007/D MJE13007G SUS CIRCUIT transistor mje13007 equivalent AN951 AN875 AN873 MPF930 MUR105 on semiconductor AN951
2002 - AN719

Abstract: transistor mje13007 equivalent on semiconductor AN719 AN569 mje13007 equivalent on semiconductor AN951 CMJE13007 MJE13007* transistor
Text: See AN569 for Pulse Power Derating Procedure. TURN-ON (FORWARD BIAS) SOA ton 10 µs DUTY CYCLE 10% PD , 1 700 V 1 COLLECTOR VOLTAGE VCC + N (Vo) t See AN569 for Pulse Power Derating Procedure , CURRENT VO 8A TURN-ON Notes: 1 See AN569 for Pulse Power Derating Procedure. TURN-ON , VOLTAGE See AN569 for Pulse Power Derating Procedure. t http://onsemi.com 500 ON Semiconductor


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PDF MJE13007 O-220 AN569 AN719 transistor mje13007 equivalent on semiconductor AN719 mje13007 equivalent on semiconductor AN951 CMJE13007 MJE13007* transistor
2003 - MPS5172

Abstract: MPS 5172
Text: , D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569 ) ZqJA(t) = r(t) · , 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569 /D, available


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PDF MPS5172 O-226) MPS 5172
2013 - MJE13007G

Abstract: transistor mje13007g
Text: % TURN-OFF 400 V 1 VCC COLLECTOR VOLTAGE See AN569 for Pulse Power Derating Procedure. TURN-ON (FORWARD BIAS , N (Vo) + LEAKAGE SPIKE 400 V 1 700 V 1 COLLECTOR VOLTAGE VCC t VCC + N (Vo) See AN569 for , V 1 COLLECTOR VOLTAGE See AN569 for Pulse Power Derating Procedure. TURN-ON (FORWARD BIAS) SOA ton , Notes: 1 COLLECTOR VOLTAGE See AN569 for Pulse Power Derating Procedure. t http://onsemi.com


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PDF MJE13007G O-220 MJE5850 MJE5852 MJE13007/D transistor mje13007g
2001 - MPS6521-D equivalent

Abstract: 1N916 MPS6521 MPS6523
Text: CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN­569 ) ZqJA(t) = r , 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569 /D , READ TIME AT t1 (SEE AN­569 ) ZqJA(t) = r(t) w RqJA TJ(pk) ­ TA = P(pk) ZqJA(t) t2 1.0 2.0 , 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569 /D


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PDF MPS6521* MPS6523 MPS6521 r14525 MPS6521/D MPS6521-D equivalent 1N916 MPS6521 MPS6523
1996 - MPS6520

Abstract: AN569 in Motorola Power Applications MPS6520 equivalent MPS3905 MPS3904 1N916 MPS6523 MPS6521 MPS3906 motorola an569 thermal
Text: TIME AT t1 (SEE AN­569 ) ZJA(t) = r(t) · RJA TJ(pk) ­ TA = P(pk) ZJA(t) 500 1.0 k 2.0 k 5.0 k 10 , temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN­569 , TIME AT t1 (SEE AN­569 ) ZJA(t) = r(t) · RJA TJ(pk) ­ TA = P(pk) ZJA(t) 500 1.0 k 2.0 k 5.0 k 10 , x 200 = 88°C. For more information, see AN­569 . Figure 39. Typical Collector Leakage Current


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PDF MPS6520/D MPS6520 MPS6521 MPS6523 MPS6520, MPS6520 AN569 in Motorola Power Applications MPS6520 equivalent MPS3905 MPS3904 1N916 MPS6523 MPS6521 MPS3906 motorola an569 thermal
2001 - mje13007-1

Abstract: MJE13007 transistor mje13007 equivalent TRANSISTOR MJE13007-1 MJE130071 mje13007 equivalent AN719 MJE13007-D MJE13007D MJE-13007
Text: COLLECTOR VOLTAGE See AN569 for Pulse Power Derating Procedure. TURN-ON (FORWARD BIAS) SOA ton 10 µs , Notes: VCC toff ton 300 V + SOLENOID DRIVER t LEAKAGE SPIKE See AN569 for , (REVERSE BIAS) SOA 1.5 V VBE(off) 9 V 300 V 8A t TIME See AN569 for Pulse Power Derating , AN569 for Pulse Power Derating Procedure. http://onsemi.com 9 t MJE13007 PACKAGE DIMENSIONS


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PDF MJE13007 MJE13007 r14525 MJE13007/D mje13007-1 transistor mje13007 equivalent TRANSISTOR MJE13007-1 MJE130071 mje13007 equivalent AN719 MJE13007-D MJE13007D MJE-13007
2011 - MJE130

Abstract: MJE13007G MJE13007G equivalent mtp8p MJE1300 MJE13007 transistor mje13007g
Text: % TURN-OFF 400 V 1 VCC COLLECTOR VOLTAGE See AN569 for Pulse Power Derating Procedure. TURN-ON (FORWARD BIAS , N (Vo) + LEAKAGE SPIKE 400 V 1 700 V 1 COLLECTOR VOLTAGE VCC t VCC + N (Vo) See AN569 for , V 1 COLLECTOR VOLTAGE See AN569 for Pulse Power Derating Procedure. TURN-ON (FORWARD BIAS) SOA ton , Notes: 1 COLLECTOR VOLTAGE See AN569 for Pulse Power Derating Procedure. t http://onsemi.com


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PDF MJE13007G O-220 MJE13007/D MJE130 MJE13007G equivalent mtp8p MJE1300 MJE13007 transistor mje13007g
2002 - mje13007-1

Abstract: MJE130 MJE13007 transistor mje13007 equivalent MJE130071 mje13007 equivalent AN951 AN873 MJE210 MPF930
Text: VOLTAGE 700 V 1 t See AN569 for Pulse Power Derating Procedure. 16 A PD = 3200 W 2 , SOLENOID DRIVER VCE VCC + N (Vo) See AN569 for Pulse Power Derating Procedure. 16 A VO t , See AN569 for Pulse Power Derating Procedure. + VCC PUSH­PULL INVERTER/CONVERTER VCC VCC , toff t VCE VCC TURN-ON + IC See AN569 for Pulse Power Derating Procedure. http


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PDF MJE13007 MJE13007 r14525 MJE13007/D mje13007-1 MJE130 transistor mje13007 equivalent MJE130071 mje13007 equivalent AN951 AN873 MJE210 MPF930
2011 - MJE13007G

Abstract: No abstract text available
Text: : FLYBACK INVERTER TURN-ON (FORWARD BIAS) SOA ton ≤ 10 ms 16 A t TIME See AN569 for Pulse , IC VO VCC COLLECTOR CURRENT DUTY CYCLE ≤ 10% C t LEAKAGE SPIKE See AN569 for , 400 V 1 700 V 1 t COLLECTOR VOLTAGE Notes: 1 SOLENOID DRIVER See AN569 for Pulse , TURN-ON + VCC 400 V 1 700 V 1 COLLECTOR VOLTAGE Notes: 1 See AN569 for Pulse Power


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PDF MJE13007G MJE13007G MJE13007/D
2001 - 828 npn

Abstract: MPS6523
Text: DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN­569 ) Zq JA(t , Semiconductor Application Note AN569 /D, available from the Literature Distribution Center or on our website at , /t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN­569 ) Zq JA(t) = r(t) w Rq JA TJ , Application Note AN569 /D, available from the Literature Distribution Center or on our website at


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PDF MPS6521* MPS6523 MPS6521 MPS6523 828 npn
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