The Datasheet Archive

AN0130NA datasheet (4)

Part Manufacturer Description Type PDF
AN0130NA AT&T Microelectronics Octal High Voltage N-Channel MOSFET Array Scan PDF
AN0130NA Others FET Data Book Scan PDF
AN0130NA Supertex 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Scan PDF
AN0130NA Topaz Semiconductor 300 V, 300 om, N-channel enhancement-mode D-MOS FET 8-channel array Scan PDF

AN0130NA Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
EIGHT MOSFET ARRAY

Abstract: octal MOSFET ARRAY MOSFET ARRAY 15 pin pin diagram of MOSFET EIGHT n-channel MOSFET ARRAY 10X10 AN0130NA mosfet array
Text: – DDSODSb □□□2fiMb b ■AN0130NA_OCTAL HIGH-VOLTAGE N-CHANNEL MOSFET ARRAY Maximum Ratings At 25 , AT&T flELEC (I C) 2SE D ■0050021= D002Ô45 4 ■OCTAL HIGH-VOLTAGE N-CHANNEL MOSFET ARRAY AN0130NA Monolithic N-Channel Enhancement-Mode Description PRELIMINARY T-93-2S The AN0130NA Octal , HIGH-VOLTAGE N-CHANNEL MOSFET ARRAY AN0130NA Test Circuits Voo INPUT td(ON) OUTPUT 10% 90% 10% ;90% 90 , 7* TYP Device Comcode AN0130NA 104432554 10-3


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PDF AN0130NA T-93-2S AN0130NA 00G2flM7 EIGHT MOSFET ARRAY octal MOSFET ARRAY MOSFET ARRAY 15 pin pin diagram of MOSFET EIGHT n-channel MOSFET ARRAY 10X10 mosfet array
P-DIP18P

Abstract: VQ300IP v020 VQ7254P VQ3001J VQ2006P VQ2006J VQ2004P ANO120 AN0130NA
Text: AN0130NA SUPERTEX N 300 ±20 0.03 1.5 ±10 ±20 300 2 5 300 10 0.01 0.025 10 0.004 0.01 7.5 5 1.5 25


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PDF VQ2004P VQ2006J VQ2006P T0-39 tn0104n3 tn0104nd tn0106n2 tn0106n3 tn0106nd P-DIP18P VQ300IP v020 VQ7254P VQ3001J ANO120 AN0130NA
d3s diode

Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND
Text: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ BV qss/ BV dgs (min) 160V 200V 300V 320V 400V * ' Order Number / Package If RD S(O N ) (max) 350Ü 300Ì2 300CÌ 350£2 350£2 *oss* ® VD S= 100V Max 1nA - - - - loss*® Vos = 250V Max - - - 1nA - 18-Lead Plastic DIP AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA Plastic SOW-20* AN0116WG - - AN0132WG AN0140WG Diet 25mA 25mA 25mA 25mA 25mA AN0116ND AN0120ND AN0130ND AN0132ND


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PDF 18-Lead AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA SOW-20* AN0116WG AN0132WG AN0140WG d3s diode EIGHT n-channel MOSFET ARRAY AN0140ND
AN0140N

Abstract: No abstract text available
Text: 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information B VD SS/ b v dgs R DS(ON) ^D(ON) Id s s * * @ V ds Order Number / Package = W * @ v DS = 18-Lead Plastic DIP AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA Plastic SOW-20* AN0116WG - - Die* (min) 160V 200V 300V 320V 400V (max) 350ÌÌ 300ft 300ÌÌ 350ft 350ÌÌ (min) 25mA 25mA 25mA 25mA 25mA 100 V Max 1nA - - - - 250V Max - - - AN0116ND AN0120ND AN0130ND AN0132ND AN0140ND


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PDF 18-Lead AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA SOW-20* AN0116WG 300ft 350ft AN0140N
8 Channel Power Mosfet Array

Abstract: DDQ17S EIGHT MOSFET ARRAY AN0140ND
Text: 18-Lead Plastic DIP AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA Plastic SOW-20* AN0116WG - -


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PDF DDQ17SÖ 18-Lead AN0116NB AN0120NB AN0130NB AN0132NB AN0140NB AN0116NA AN0120NA 8 Channel Power Mosfet Array DDQ17S EIGHT MOSFET ARRAY AN0140ND
Not Available

Abstract: No abstract text available
Text: TELEDYNE C O MP O N E NT S 2ÖE D aT17t.02 QQQbaLT 7 _ t ÏT , IC3H=üÆ\ 5 Z SEMICONDUCTOR ANOllON, AN0120N AN0130N, AN0140N N-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS 7 ORDERING INFORMATION 18 Pin Plastic DIP DtscriptIon(each channel) AN0110NA 100V,100Q AN0120NA 200V,3 0 0 2 AN0130NA 300V.300Q AN0140NA 400V,350S FEATURES Ultra-Low Channel O FF Leakage, <800pA High Channel-to-Channel Isolation 100V to 400V Capability Industry Standard Pin-Out APPLICATIONS Electrostatic


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PDF aT17t AN0120N AN0130N, AN0140N AN0110NA AN0120NA AN0130NA AN0140NA 800pA N013C
1996 - EIGHT MOSFET ARRAY

Abstract: Piezoelectric 1Mhz AN0130 "high voltage Piezoelectric transducer" p channel mosfet 100v AN0130NA 100 Volt mosfet schematic circuit SOW-20 AN0116NA AN0120
Text: AN0116 AN0132 AN0120 AN0140 AN0130 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package BVDSS/ BVDGS (min) IDSS* @ VDS = 100V Max IDSS* @ VDS = 250V Max 18-Lead Plastic DIP Plastic SOW-20* Die 350 25mA 1nA - AN0116NA AN0116WG AN0116ND 200V 300 25mA - - AN0120NA - AN0120ND 300V 300 25mA - - AN0130NA - AN0130ND 320V 350 25mA - 1nA AN0132NA


Original
PDF AN0116 AN0132 AN0120 AN0140 AN0130 18-Lead SOW-20* AN0116NA AN0116WG AN0116ND EIGHT MOSFET ARRAY Piezoelectric 1Mhz AN0130 "high voltage Piezoelectric transducer" p channel mosfet 100v AN0130NA 100 Volt mosfet schematic circuit SOW-20 AN0116NA
EIGHT MOSFET ARRAY DIP-18

Abstract: Piezoelectric 1Mhz SOW-20 AN0130NB AN0130NA AN0120NB AN0120NA AN0116WG AN0116ND AN0116NB
Text: SUPERTEX INC Ol I>Ë) 0773515 0001750 0 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Ordering Information BW bvdos (min) "DS{ON) (max) II 1 •* © V = 'dss w vds 100V Max 1 "(3>V = ■dss "ds 250V Max Order Number / Package 18-Lead Ceramic DIP 18-Lead Plastic DIP Plastic SOW-20* Die 160 V 350Q 25mA 1nA — AN0116NB AN0116NA AN0116WG AN0116ND 200V 3000 25mA — — AN0120NB AN0120NA — AN0T20ND 300V 300n 25mA — — AN0130NB AN0130NA — AN0130ND 320V 350n 25mA â


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PDF 18-Lead SOW-20* AN0116NB AN0116NA AN0116WG AN0116ND AN0120NB AN0120NA AN0T20ND EIGHT MOSFET ARRAY DIP-18 Piezoelectric 1Mhz SOW-20 AN0130NB AN0130NA AN0120NA AN0116ND
DIODE G7

Abstract: AN0116 10MVA AN0140 AN0132 AN0140ND AN0120ND AN0120NA AN0120 AN0116ND
Text: ^ Super tex inc. AN0116 AN0132 AN0120 AN0140 AN0130 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ ■MW BVdgs (min) "DS(ON) (max) If Ioss*@vds = 100V Max 'dss" ® Vos = 250V Max Order Number / Package 18-Lead Plastic DIP Plastic SOW-20* Diet 160V 350£2 25mA 1nA — AN0116NA AN0116WG AN0116ND 200V 300£i 25mA — — AN0120NA — AN0120ND 300V 300Ì2 25mA — — AN0130NA — AN0130ND 320V 35012 25mA — 1nA AN0132NA AN0132WG AN0132ND 400V 35012


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PDF AN0116 AN0132 AN0120 AN0140 AN0130 18-Lead SOW-20* AN0116NA AN0116WG AN0116ND DIODE G7 10MVA AN0140ND AN0120ND AN0120NA AN0116ND
Teledyne Semiconductor

Abstract: AN0110N AN0140NA AN0140N AN0130NA AN0130N AN0120NA AN0120N AN0110NA AN01-10
Text: TELEDYNE COMPONENTS 2ÖE D aT17t.0E QQObaLT 7 cÏTti=>ll!=a<£\ 5Z, ANOllON, AN0120N SEMICONDUCTOR AN0130N, AN0140N N-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS ORDERING INFORMATION 18 Pin Plastic DIP AN0110NA . AN0120NA AN0130NA AN0140NA Dascription (each channel) 100V,100Q 200V,3002 300V,300Q 400V,350S FEATURES ■Ultra-Low Channel OFF Leakage, <800pA ■High Channel-to-Channel Isolation ■100V to 400V Capability ■Industry Standard Pin-Out APPLICATIONS â


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PDF aT17t AN0120N AN0130N, AN0140N AN0110NA AN0120NA AN0130NA AN0140NA 800pA AN0110N. Teledyne Semiconductor AN0110N AN0140NA AN0140N AN0130N AN0110NA AN01-10
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