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RH119MW#PBF Linear Technology IC DUAL COMPARATOR, 8000 uV OFFSET-MAX, 200 ns RESPONSE TIME, CDFP10, CERPACK-10, Comparator
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AM1214-200 datasheet (3)

Part Manufacturer Description Type PDF
AM1214-200 STMicroelectronics L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS Original PDF
AM1214-200 STMicroelectronics RF & Microwave Transistor L-Band Radar Applications Original PDF
AM1214-200 STMicroelectronics RF & Microwave Components Data Book 1993 Scan PDF

AM1214-200 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1994 - IC 7475

Abstract: 40w electronic ballast AL203 AM1214-200 capacitor 100 uf 63v
Text: AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . , .400 x .500 2LFL (M205) hermetically sealed ORDER CODE BRANDING 1214-200 AM1214-200 PIN CONNECTION DESCRIPTION The AM1214-200 device is a high power Class C transistor specifically designed for , reliability and product consistency. AM1214-200 is supplied in the BIGPACTM hermetic metal/ceramic package , * *Applies only to rated RF amplifier operation September 1992 1/4 AM1214-200 ELECTRICAL


Original
PDF AM1214-200 AM1214-200 IC 7475 40w electronic ballast AL203 capacitor 100 uf 63v
1999 - SD1446

Abstract: SD2910 philips blx15 BLV36 blw97 SD4575 BLW60C BLV103 st cross reference MX0912B350Y
Text: MSC83305 AM81720-012 AM1214-130 AM1214-130 AM1214-175 AM1214-200 AM1214-250 AM1214-250 AM81214


Original
PDF BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 SD1446 SD2910 philips blx15 BLV36 blw97 SD4575 BLW60C BLV103 st cross reference MX0912B350Y
1997 - M239

Abstract: AM81214-030 AM81214-015 AM81214-006 AM80814-025 AM80814-005 AM1214-325 AM1214-300 AM1214-200 AM1214-175
Text: 0.45 150 5 S038 AM1214-200 1215-1400 200 40 7.0 45 40 0.23 150 5 , -020 1400-1600 17.6 4.0 6.4 45 20 3.0 CW - S036 AM1416-220 1450-1600 200


Original
PDF AM80814-005 AM81214-030 AM81214-060 AM1214-100 AM1214-175 AM1214-200 AM1214-325 AM81416-020 AM1416-220 M239 AM81214-030 AM81214-015 AM81214-006 AM80814-025 AM80814-005 AM1214-325 AM1214-300 AM1214-200 AM1214-175
1994 - ic 7475

Abstract: thomson capacitor AL203 AM1214-200
Text: AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . , .400 x .500 2LFL (M205) hermetically sealed ORDER CODE BRANDING 1214-200 AM1214-200 PIN CONNECTION DESCRIPTION The AM1214-200 device is a high power Class C transistor specifically designed for , reliability and product consistency. AM1214-200 is supplied in the BIGPACTM hermetic metal/ceramic package , * *Applies only to rated RF amplifier operation September 1992 1/4 AM1214-200 ELECTRICAL


Original
PDF AM1214-200 AM1214-200 ic 7475 thomson capacitor AL203
1994 - 121-417

Abstract: AM1214-175 104-0012 1215 mhz to 1400mhz rf amplifier
Text: Voltage* 45 V Junction Temperature (Pulsed RF Operation) 250 °C - 65 to + 200 °C


Original
PDF AM1214-175 AM1214-175 121-417 104-0012 1215 mhz to 1400mhz rf amplifier
1994 - AM1214-300

Abstract: No abstract text available
Text: to + 200 °C 0.24 °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance


Original
PDF AM1214-300 AM1214-300
s038

Abstract: 5S038 AM1214-300 AM80814-005 AM80814-025 AM81214-006 AM81214-015 AM81214-030 S042
Text: -100 1215-1400 100 25 6.0 50 28 0.55 100 10 S038 AM1214-Ì75 1215-1400 160 30 7.3 45 40 0.45 150 5 S038 AM1214-200 1215-1400 200 40 7.0 45 40 0.23 150 5 M205 AM1214-325 1215-1400 325 75 6.4 38 50 0.10 13 2 S038 AM1416-100 1400-1550 90 15 7.8 40 45 0.25 10 10 S042 AM1416- 200 * 1400-1550 180 40 6.5 40 50 0.11 10 10 S036 AM1416-220f 1400-1600 200 40 7.0 40 50 — 10 10 S038 f In Development 'Not recommended for new design


OCR Scan
PDF AM80814-005 AM80814-025 AM1214-300 AM81214-006 AM81214-015 AM81214-030 AM81214-060 AM1214-100 AM1214-Ã AM1214-200 s038 5S038 S042
1994 - AM1214-300

Abstract: No abstract text available
Text: to + 200 °C 0.24 °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance


Original
PDF AM1214-300 AM1214-300
Not Available

Abstract: No abstract text available
Text: P o u t = 200 W MIN. WITH 7.0 dB GAIN DESCRIPTION The AM1214-200 device is a high power Class C , automatic wire bonding techniques ensure high reliability and product consistency. AM1214-200 is supplied , 1/4 7^2^237 O O b H ^ D lfl7 AM1214-200 ELECTRICAL SPECIFICATIONS (Tease = 25°C) STATIC , Temperature (Pulsed RF Operation) 250 °C - 65 to + 200 °C 0.26 °C/W Power Dissipation , in = 40W Vcc = 40V 200 — — W ile f = 1215 — 1400MHz P in = 40W Vcc =


OCR Scan
PDF AM1214-200
1999 - MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 tp9383 TP3008 transistor 2sC636 MRF255 equivalent
Text: -015 AM81214-030 AM1214-200 SD1897 SD1895-03 SD1899 MSC82302 MSC82304 MSC82306 AM82731-006 AM2729 , -175 AM1214-200 AM1214-250 AM1214-250 AM81214-030 AM81214-060 SD1398 SD1398 SD1398 SD1423 SD1423


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PDF 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 tp9383 TP3008 transistor 2sC636 MRF255 equivalent
1994 - 104-0012

Abstract: AM1214-175
Text: Voltage* 45 V Junction Temperature (Pulsed RF Operation) 250 °C - 65 to + 200 °C


Original
PDF AM1214-175 AM1214-175 104-0012
2000 - M259

Abstract: M-259 AM1214-250 XAM1214-250
Text: * 21 A Collector-Base Voltage 70 V +250 °C -65 to + 200 °C 0.21 °C/W


Original
PDF AM1214-250 XAM1214-250 AM1214-250 M259 M-259 XAM1214-250
Not Available

Abstract: No abstract text available
Text: °C - 65 to + 200 °C 0.45 °c/w Power Dissipation* (Tc £100°C) Storage


OCR Scan
PDF AM1214-175 AM1214-175 J135066F
1994 - AM1214-100

Abstract: No abstract text available
Text: Temperature (Pulsed RF Operation) 250 °C - 65 to + 200 °C 0.55 °C/W Power Dissipation


Original
PDF AM1214-100 AM1214-100
1994 - AM1214-100

Abstract: No abstract text available
Text: Temperature (Pulsed RF Operation) 250 °C - 65 to + 200 °C 0.55 °C/W Power Dissipation


Original
PDF AM1214-100 AM1214-100
Not Available

Abstract: No abstract text available
Text: Junction Temperature (Pulsed RF Operation) 250 °C - 65 to + 200 °C 0.55 °C/W Power


OCR Scan
PDF AM1214-100 AM1214-100 100mA 1400MHz
2000 - M259

Abstract: AM1214-130 AM1214-250 XAM1214-130
Text: Device Current* 12 A Collector-Base Voltage 70 V +250 °C -65 to + 200 °C TBD


Original
PDF AM1214-130 XAM1214-130 AM1214-130 AM1214-250 M259 XAM1214-130
2000 - AM1214-130

Abstract: AM1214-250 M259 XAM1214-130 gp 845
Text: Device Current* 12 A Collector-Base Voltage 70 V +250 °C -65 to + 200 °C TBD


Original
PDF AM1214-130 XAM1214-130 AM1214-130 AM1214-250 M259 XAM1214-130 gp 845
1994 - AM1214-325

Abstract: No abstract text available
Text: Temperature (Pulsed RF Operation) 250 V °C - 65 to + 200 °C 0.10 °C/W Power Dissipation


Original
PDF AM1214-325 AM1214-325
1994 - AM1214-325

Abstract: No abstract text available
Text: Junction Temperature (Pulsed RF Operation) 250 °C - 65 to + 200 °C 0.10 °C/W Power


Original
PDF AM1214-325 AM1214-325
2000 - SO42

Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd2931 fm sd1393 01 SD57045 SD4100 sd1446 LT5232
Text: -100 AM1214-130* AM1214-175 AM1214-200 AM1214-250* AM1214-300 AM1214-325 AM1416-220 850-1400 , 30 30 30 30 30 30 30 30 30 30 30 75 100 125 130 220 200 75 150 150 220 250 , 50 50 AB AB AB AB AB AB AB AB AB AB AB AB 0.65 0.60 0.65 1.00 0.60 0.36 2.00 , 48 45 40 40 100 32 32 32 200 2 2 2 2 5 0.68 0.86 0.17 0.11 0.14 SO42 SO36 , AM80610-030 AM0608- 200 AM0608-450 FREQ. (MHZ) 400-500 400-500 620-960 600-750 600-750 POUT


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PDF PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S SO42 sd1393 Transistor amplifier SD1393 SD1470 sd2931 fm sd1393 01 SD57045 SD4100 sd1446 LT5232
Not Available

Abstract: No abstract text available
Text: ) 250 °C - 65 to + 200 °C 0.24 °C/W Power Dissipation* (Tc i 100°C) Device


OCR Scan
PDF AM1214-300 GGbiH77 AM1214-300
1994 - AM1214-100

Abstract: No abstract text available
Text: (Pulsed RF Operation) 250 °C - 65 to + 200 °C 0.55 °C/W Power Dissipation* (TC 100


Original
PDF AM1214-100 AM1214-100
1999 - PH0912-35

Abstract: PH3135-5M PH0810-4 st cross reference DU2805S SD2903 PH1214-6M sd4701 CROSS MACOM SD4590
Text: -015 AM81214-030 AM1214-200 SD1897 SD1895-03 SD1899 MSC82302 MSC82304 MSC82306 AM82731-006 AM2729


Original
PDF DU2805S DU2810S DU2820S DU2840S DU28200M FH2164 PH0810-4 PH0810-15 PH0810-35 PH0810-60A PH0912-35 PH3135-5M PH0810-4 st cross reference DU2805S SD2903 PH1214-6M sd4701 CROSS MACOM SD4590
tp2304

Abstract: TPV3100 TP9383 MRF2001 TP2330 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12 BLU60/12 BLU99 BLU99/SL BLV10 BLV11 BLV12 BLV13 BLV20 BLV21 BLV25 BLV30 BLV31 BLV33 BLV33F BLV36 BLV57 BLV58 BLV62 BLV75-12 BLV80-28 BLV97CE BLV98CE BLV99 BLV100 BLV103 BLV193 BLV194 BLV945A


Original
PDF AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 MRF2001 TP2330 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
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