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AAE1646-00 PC420BF-1726SPN-2-Z-001
AAE1646-00 ECAD Model
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TE Connectivity
AAE1645-00 100P160-19-1-B-WB4-19
AAE1645-00 ECAD Model
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AAE1648-00 PC420BF-1706PSN-2-Z-001
AAE1648-00 ECAD Model
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TE Connectivity
AAE1647-00 Cross Referenced to TE CNTY RAYCHEM - Part: RYCPC420BF-1198PSN-2-Z-001
AAE1647-00 ECAD Model
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AE1-64 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: 12345642E2C9AAE4 ! - 64 .CC6'A6E4 CH 7 COM CH6/7 CH 6 USB CH 5 COM CH4/5 CH 4 CH 3 COM CH2/3 CH , 15A185A1ABFA11 , 64 AF7A1F7"91:C128C315A1 ! 1CA489266AB4*2 , , 64 AF7A1F7"91:C128C315A1 1 , FBF-1 AF7"16A71 ( 64 1 1 1881 µ!1 &! (A9262B4'A6CD6C4 #5A1(0%1F1AF"7A11+A167


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PDF 12314567897ABCD64E9F459F674D9A5 7489266AB45CDB2EAF4 E2B456 9ABC13CD1 9ABC13C 9ABC13C21 9ABC13C31 9ABC13C81 B4288 9ABC18C
2000 - Not Available

Abstract: No abstract text available
Text: · 4 K refresh cycles every 64 ms Auto- and Self-refresh CKE power down mode Output Enable and , 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 VSS DQ15 VSSQ DQ14 DQ13 , , 69, 70, 73 17 18 19 20 22, 23 24 24, 25, 26, 27, 60, 61, 62, 63, 64 , 65, 66 67 68 16, 28, 59, 71 , command should also be asserted every 15.6 µs or a total 4096 refresh commands within a 64 ms period , = 2 *4,6 *5 tHZ2 tOH tREFI tREF *4 *4 tT tCKSP 3 - - 0.5 3 tAC2 tLZ tHZ1 3 7 - 15.6 64 10 - 3 -


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PDF MB81E643242-13/-15 288-Word MB81E643242 32-bit D-63303 F0004
Not Available

Abstract: No abstract text available
Text: SSM6N55NU MOSFET シリコンNチャネルMOSå½¢ (U-MOS-H) SSM6N55NU 1. 用途 • パワーマネジメントスイッチ • DC-DCコンバータ用 2. 特長 (1) 4.5 V駆動です。 (2) オン抵抗が低い。 : RDS(ON) = 46 mΩ (最大) (@VGS = 10 V) RDS(ON) = 64 mΩ (最大) (@VGS = 4.5 V) 3. 外観と内部回路構成図 1.ソース1 2.ゲート1 3.ドレイン2 4.ソース2 5.ゲート2 6 , é †æ–¹å‘ä¼é”ã‚¢ãƒ‰ãƒŸã‚¿ãƒ³ã‚¹ V(BR)DSX ID = 10 mA, VGS = -20 V  48 64 VDS = 10 V, ID = 1.0 A 3.4 6.8


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PDF SSM6N55NU
2002 - Not Available

Abstract: No abstract text available
Text: dual operation Flash memory organized as 4M words of 16 bits each . The device is offered in a 64 , Time (ns) 30 Max. CE Access Time (ns) 80 Max. OE Access Time (ns) 30 s PACKAGE 64 , : 8 Mbit (8 KB ×8 and 64 KB ×15) Bank B: 24 Mbit ( 64 KB ×48) Bank C: 24 Mbit ( 64 KB ×48) Bank D: 8 Mbit (8 KB ×8 and 64 KB ×15) · Enhanced VI/O (VCCQ) Feature Input/ Output voltage generated on the , Kbytes, a hundred twenty-six 64 Kbytes, eight 8 Kbytes sectors. Any combination of sectors can be


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PDF MBM29QD64DF 64M-bit, 64-ball
2009 - I283A

Abstract: I286A
Text: ) (mm) W1 (mm) 330.0 330.0 330.0 330.0 12.4 12.4 12.4 12.4 6.4 6.4 6.4 6.4 B0 (mm) 5.2 5.2 5.2 5.2


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PDF INA282, INA283 INA284, INA285 INA286 SBOS485B INA283, INA285, I283A I286A
Not Available

Abstract: No abstract text available
Text: TPH11006NL MOSFET シリコンNチャネルMOSå½¢ (U-MOS-H) TPH11006NL 1. 用途 • スイッチングレギュレータ用 • DC-DCコンバータ用 • モータドライブ用 2. 特長 (1) スイッチングスピードが速い。 (2) ゲート入力電荷量が小さい。: QSW = 6.4 nC (標準) (3) オン抵抗が低い。: RDS(ON) = 9.6 mΩ (標準) (VGS = 10 V , €¥ ゲートスイッチ電荷量 QSW  6.4  最小 標準 最大 単位 6.4


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PDF TPH11006NL
2011 - Not Available

Abstract: No abstract text available
Text: ) å°åŠ æ¡ä»¶ VDD = 64 V, Tch = 25 (初期), L = 21.7 µH, IAR = 46 A 注意:こã , · ゲート入力電荷量 Qg 測定条件 VDD ≈ 64 V, VGS = 10 V, ID = 46 A ゲート・ソース間電荷é , €¥ ゲートスイッチ電荷量 QSW  16  最大 単位 A 6.4 . ソースドレイン間の特æ


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PDF TK46A08N1 O-220SIS
Not Available

Abstract: No abstract text available
Text: = 64 V, Tch = 25 (初期), L = 24.1 µH, IAR = 35 A 注意:この製品はMOSæ§‹é€ ã§ã , ›® 記号 ゲート入力電荷量 Qg 測定条件 VDD ≈ 64 V, VGS = 10 V, ID = 35 A î , ‡1 6.4 . ソースドレイン間の特性 (特に指定のない限り, Ta = 25) ソースî


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PDF TK35E08N1 O-220
2011 - Not Available

Abstract: No abstract text available
Text: ) å°åŠ æ¡ä»¶ VDD = 64 V, Tch = 25 (初期), L = 24.0 µH, IAR = 72 A 注意:こã , · ゲート入力電荷量 Qg 測定条件 VDD ≈ 64 V, VGS = 10 V, ID = 72 A ゲート・ソース間電荷é , €¥ ゲートスイッチ電荷量 QSW  33  6.4 . ソースドレイン間の特性 (特に指定のないé


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PDF TK72A08N1 O-220SIS
Not Available

Abstract: No abstract text available
Text: = 20 V, IO = -2.6 mA, VO > 17.4 V  0.4 1.6 VCC = 3.3 V, VO < 0.6 V IO = 6.4 mA 0.8   VCC = 20 V, VO < 0.6 V IO = 6.4 mA 0.8   VCC = 5 V î


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PDF TLP2955 TLP2955ã
Not Available

Abstract: No abstract text available
Text: 注4: アバランシェエネルギー (単発) å°åŠ æ¡ä»¶ VDD = 64 V, Tch = 25 (初期), L = , · ゲート入力電荷量 Qg 測定条件 VDD ≈ 64 V, VGS = 10 V, ID = 100 A  130  Qgs1 î , €¥ ゲートスイッチ電荷量 QSW  53  ゲート・ソース間電荷量1 25 6.4


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PDF TK100E08N1 O-220
2011 - Not Available

Abstract: No abstract text available
Text: ) å°åŠ æ¡ä»¶ VDD = 64 V, Tch = 25 (初期), L = 21.4 µH, IAR = 100 A 注意:こã , VDD ≈ 64 V, VGS = 10 V, ID = 100 A  130  Qgs1  45 î , €¥ ゲート・ソース間電荷量1 25 6.4 . ソースドレイン間の特性 (特に指定のない限り, Ta = 25î


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PDF TK100A08N1 O-220SIS
Not Available

Abstract: No abstract text available
Text: = 20 V, IO = -2.6 mA, VO > 17.4 V  0.4 1.6 VCC = 3.3 V, VO < 0.6 V IO = 6.4 mA 0.8   VCC = 20 V, VO < 0.6 V IO = 6.4 mA 0.8   VCC = 5 V î


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PDF TLP2955F TLP2955Fã
2011 - Not Available

Abstract: No abstract text available
Text: ) å°åŠ æ¡ä»¶ VDD = 64 V, Tch = 25 (初期), L = 24.1 µH, IAR = 35 A 注意:こã , · ゲート入力電荷量 Qg 測定条件 VDD ≈ 64 V, VGS = 10 V, ID = 35 A  25  Qgs1 î , €¥ ゲートスイッチ電荷量 QSW  10  最大 単位 A ゲート・ソース間電荷量1 6.4


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PDF TK35A08N1 O-220SIS
Not Available

Abstract: No abstract text available
Text: 注4: アバランシェエネルギー (単発) å°åŠ æ¡ä»¶ VDD = 64 V, Tch = 25 (初期), L = , · ゲート入力電荷量 Qg 測定条件 VDD ≈ 64 V, VGS = 10 V, ID = 72 A  81  Qgs1 î , €¥ ゲートスイッチ電荷量 QSW  33  ゲート・ソース間電荷量1 6.4


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PDF TK72E08N1 O-220
Not Available

Abstract: No abstract text available
Text: = 64 V, Tch = 25 (初期), L = 21.7 µH, IAR = 46 A 注意:この製品はMOSæ§‹é€ ã§ã , VDD ≈ 64 V, VGS = 10 V, ID = 46 A  37  Qgs1  14 î , ¤§ 単位 A ゲート・ソース間電荷量1 6.4 . ソースドレイン間の特æ


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PDF TK46E08N1 O-220
2009 - I282A

Abstract: I283A INA28X I286A I-285 i286 I284A I285A
Text: 12.4 12.4 6.4 6.4 6.4 B0 (mm) 5.2 5.2 5.2 K0 (mm) 2.1 2.1 2.1 P1 (mm) 8.0 8.0 8.0 W Pin1


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PDF INA282, INA283 INA284, INA285 INA286 SBOS485B INA283, INA285, I282A I283A INA28X I286A I-285 i286 I284A I285A
Not Available

Abstract: No abstract text available
Text: €¥ tf  64  toff  180  最小 標準 最大 単位 nC , A ゲート・ソース間電荷量1 6.4 . ソースドレイン間の特性 (特に指定ã


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PDF TK100E06N1 O-220
Not Available

Abstract: No abstract text available
Text: €¥ 4.0 VGS = 6.5 V, ID = 14 A  6.4 14 VGS = 10 V, ID = 14 A  4.8 5.9 , ° 標準 最大 単位 6.4 . ソースドレイン間の特性 (特に指定のない限り


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PDF TPH5R906NH
2011 - Not Available

Abstract: No abstract text available
Text: (注3) EAS 64 mJ ドレイン電流 (パルス) 許容損失 (Tc = 25) アバã , €¥ ゲートスイッチ電荷量 QSW  15  最大 単位 A 25 6.4 . ソースドレイン間ã


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PDF TK34A10N1 O-220SIS
A1700

Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 64M (4M × 16) BIT MBM29QM64DF-65/80 s GENERAL DESCRIPTION The MBM29QM64DF is 64M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 4M words by 16 bits. The device is offered in a 64 -ball FBGA package. This device is designed to be programmed in-system with the standard system 3.0 V Vcc supply. 12.0 V Vpp and , ) 65 80 Max. OE Access Time (ns) 25 30 s PACKAGE 64 -ball plastic FBGA (BGA


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PDF MBM29QM64DF-65/80 MBM29QM64DF 64M-bit, 64-ball A1700
Not Available

Abstract: No abstract text available
Text:  4.0 VGS = 10 V, ID = 6.5 A  54 64 mΩ 最小 標準 最å , €¥ 最小 標準 最大 単位 6.4 . ソースドレイン間の特性 (特に指定ã


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PDF TPH6400ENH
2003 - Not Available

Abstract: No abstract text available
Text: €¥ 64  最小 標準 最大 単位 nC スイッチング時間 (下降時間 , €¥ ゲート・ソース間電荷量1 6.4 . ソースドレイン間の特性 (特に指定のない限り, Ta = 25î


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PDF TK42A12N1 O-220SIS
2003 - Not Available

Abstract: No abstract text available
Text: €¥ 最小 標準 最大 単位 A 6.4 . ソースドレイン間の特性 (特に指定ã


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PDF TK4P60DA
Not Available

Abstract: No abstract text available
Text: mA 2.0  4.0 RDS(ON) VGS = 6.5 V, ID = 4.5 A  28 64 VGS = 10 V, ID = , €¥  42 A   -1.2 V 6.4 . ソースドレイン間の特性 (特に指å


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PDF TPN22006NH
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