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LTC2378IMS-16#TRPBF Linear Technology LTC2378-16 - 16-Bit, 1Msps, Low Power SAR ADC with 97dB SNR; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LTC2378CDE-16#PBF Linear Technology LTC2378-16 - 16-Bit, 1Msps, Low Power SAR ADC with 97dB SNR; Package: DFN; Pins: 16; Temperature Range: 0°C to 70°C
LTC2378CDE-16#TRPBF Linear Technology LTC2378-16 - 16-Bit, 1Msps, Low Power SAR ADC with 97dB SNR; Package: DFN; Pins: 16; Temperature Range: 0°C to 70°C
LTC2378CMS-16#PBF Linear Technology LTC2378-16 - 16-Bit, 1Msps, Low Power SAR ADC with 97dB SNR; Package: MSOP; Pins: 16; Temperature Range: 0°C to 70°C
LTC2378CMS-16#TRPBF Linear Technology LTC2378-16 - 16-Bit, 1Msps, Low Power SAR ADC with 97dB SNR; Package: MSOP; Pins: 16; Temperature Range: 0°C to 70°C
LTC2378HMS-16#PBF Linear Technology LTC2378-16 - 16-Bit, 1Msps, Low Power SAR ADC with 97dB SNR; Package: MSOP; Pins: 16; Temperature Range: -40°C to 125°C
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ADE7816ACPZ Analog Devices Inc Rochester Electronics 22 $8.76 $7.12
ADE7816ACPZ Analog Devices Inc RS Components 137 £7.68 £6.38
ADE7816ACPZ Analog Devices Inc Chip1Stop 231 $5.66 $5.66
EVAL-ADE7816EBZ Analog Devices Inc Chip1Stop 1 $428.00 $428.00

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ADE 7816 datasheet (2)

Part Manufacturer Description Type PDF
ADE7816ACPZ Analog Devices ADE7816 - IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other Original PDF
ADE7816ACPZ-RL Analog Devices ADE7816 - IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other Original PDF

ADE 7816 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - Not Available

Abstract: No abstract text available
Text: 2 1 SECTION A-A End View of Assembly Top View of Assembly 148.13 [5.832] Lid 3.96 [.156] A Cover Screw 58.00 [2.283] Lid B B 84.00 [3.307] 78.16 [3.077] 85.77 [3.377] (Inner Box Width) 94.00 [3.701] B B A 9.58 [.377] 109.50 [4.311] 50.25 [1.978] (Inner Wall Height) 119.50 [4.705] Lid Flanged Box SECTION B-B Side View of , has ed as s em bly inc ludes box , lid and 4 c over s c rews . B ox and lid are m ade from Diec as t


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PDF 1590M 1590CF
Not Available

Abstract: No abstract text available
Text: reference (2.5 V). T h e A D 7816 is a tem p eratu re m onitoring only device in a SO IC / |jSO IC package , Tem perature section of the data sheet. FUNCTIONAL BLOCK DIAGRAM T h e A D 7816 , AD 7817 and AD , Outline IC (SO IC ), in a 16-lead, T h in Shrink Small O utline Package (TSSO P), while the A D 7816 /A , eratin g tem p eratu re ranges, see O rdering G uide. : A D 7816 an d A D 7817 tem p eratu re sensors , u re 7. A D 7816 F u n c tio n a l B lo ck D ia g ra m F ig u re 2. A D 7818 F u n c tio n a l B


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PDF 10-Bit AD7816/AD7817/AD7818 AD7818) AD7817) AD7816
7818a

Abstract: ADE 7816 lfh 1001 AD7816 7816A 7817A ic 7818
Text: Battery Charging Applications FUNCTIONAL BLOCK DIAGRAM AGND rITie A D 7816 , A D7817 and AD7818 , temperature is exceeded 3. T h e autom atic pow er-dow n feature enables the AD 7816 , AD 7817 and AD7818 to , lthough the A D 7816 /A D 7817/A D 7818 featu re p ro p rieta ry E S D p ro tectio n circuitry, p erm a n e , C O N V S T signal is checked at the en d o f a conversion. If it is logic low, the A D 7816 and A D , reference the REF in pin should be tied to A G N D . If an external reference is connected to the A D 7816


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PDF 10-Bit AD7816/AD7817/AD7818 AD7816 7818a ADE 7816 lfh 1001 7816A 7817A ic 7818
2013 - Not Available

Abstract: No abstract text available
Text: 2 1 SECTION A-A End View of Assembly Top View of Assembly 148.13 [5.832] Lid 43.60 [1.717] 3.96 [.156] A 84.00 [3.307] 78.16 [3.077] B B B A 87.67 [3.452] (Inner Box Width) 94.00 [3.701] B 9.58 [.377] 109.50 [4.311] 35.85 [1.411] (Inner Wall height) 119.50 [4.705] 37.85 [1.490] (Inner Box Height) SECTION B-B Side View of , urc has ed as s em bly inc ludes box , lid and 4 c over s c rews . B ox and lid are m ade from Diec


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PDF 1590M 1590BBSF
Not Available

Abstract: No abstract text available
Text: being used and is intended to represent worst case. • The m oldings are m ade from high tem , €” m - l ^ E . — 3 7816 *2 A ENV CCM04-1889 2 x 4 contacts + switch C. 1


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PDF CCM04 CCM04-1317/1318/1319/1320 CCM04-1334 CCM04-5004/1201/1202/1203/1204 CCM04-5004* CCM04-1201 CCM04-1202 CCM04-1203
MAL100

Abstract: NF24Q100 DIP28 GSM11-11 S028 TDA8001 TDA8001A TDA8001AT TDA8001T
Text: readers • ISO 7816 compatibility, GSM11-11 and banking specification capability. applications • Pay , an asynchronous smart card (ISO 7816 ) and a microcontroller. The complete supply, protection and , with a typical slew rate of 0.38 V/ms. In order to respect the ISO 7816 slopes, the circuit generates , sequence. clkint _rmjiJTrinrUiJiiijmjiJi^^ vcc nmj iJTrLriJinjiJiJiJinnjTrLJ^^ \i •de . Fig


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PDF TDA8001 711052b 493061/1500/01/pp24 711035b MAL100 NF24Q100 DIP28 GSM11-11 S028 TDA8001 TDA8001A TDA8001AT TDA8001T
2006 - TAG 8816

Abstract: SPARC64 Fujitsu SparC64 instruction set FN 1016 b32s cwp 254 asi_intr_receive ADE 7816 va4016 2COR
Text: .4.2 Action of async_data_error ( ADE ) Trap 174 P.4.3 Instruction End-Method at ADE Trap 176 P.4.4 vi Expected Software Handling of ADE Trap SPARC64 VI Extensions · Release 1.3, 27 Mar , determine the effect on software Asynchronous data error ( ADE ) trap for additional errors: Relaxed , 1.3, 27 Mar. 2007 F. Chapter 1 Overview 3 Some ADE traps that are deferred but retryable. Simultaneous reporting of all detected ADE errors at the error barrier for correct handling of


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PDF SPARC64TM SPARC64 TAG 8816 Fujitsu SparC64 instruction set FN 1016 b32s cwp 254 asi_intr_receive ADE 7816 va4016 2COR
bip 373

Abstract: No abstract text available
Text: O VcES V EBO Value 450 1000 1000 12 2 5 1 2 50 0.4 - 6 5 to 150 Unit Vdc Vdc Vdc Vdc Ade lc !c m Ib 'bm Ade Pd T j, Tstg Watt W/°C °C THERMAL CHARACTERISTICS Thermal Resistance , Vdc, lc = 0) ON CHARACTERISTICS Base-Emitter Saturation Voltage (lc = 0.4 Ade , Iß = 40 mAdc) (lc = 1 Ade , Ib = 0.2 Ade ) Collector-Emitter Saturation Voltage (lc = 0.4 Ade , Iß = 40 mAdc) (lc = 1 Ade , lB = 0.2 Ade ) VßE(sat) VcEO(sus) Sym bol Min Typ Max Unit 450 570 100 Vdc ICEO


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PDF MJE18002D2/D JE18002D MJE18002D2 2PHX34555C bip 373
2n5301

Abstract: 2n5302 2n5303 200WATT TRANSISTOR 2n5302
Text: Saturation Voltage - = ° '75 Vdc < Max) @ 'C = 10 Ade (2N5301, 2N5302) 1.0 Vdc (Max) @ lc = 10 Ade (2N5303 , Unit Vdc Vdc Ade Ade Watts W /Ç C °C T j , Tstg THERMAL CHARACTERISTICS Characteristic Thermal , 1.0 1.0 5.0 m Adc ON CHARACTERISTICS DC Current Gain (Note 1) *UC = 1 0 Ade , V q e = 2.0 Vdc) *(IC = 10 Ade , VCE = 2.0 Vdc) *(IC = 15 Ade , V q e = 2.0 Vdc) (Iq = 20 Ade , V q e = 4.0 Vdc) (Iq = 30 Ade , V q e = 4.0 Vdc) ` C ollector-E m itter (lc = 10 Ade , lB (Iq = 10 Ade , lB (Iq = 15 Ade , Iß (Iq = 20


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PDF 2N5301/D 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5745 2n5301 2n5302 2n5303 200WATT TRANSISTOR 2n5302
Not Available

Abstract: No abstract text available
Text: Vdc Vdc Vdc Vdc Ade POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS CASE 369-07 CASE 369A- 13 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS Ade Watt W /°C °C THERMAL , Voltage (lc = 0.4 Ade , lB = 40 mAdc) (lc = 1 Ade , Iß = 0.2 Ade ) Ic e s |iAdc Ie b o (lAdc v , 25°C 20 18 10 7 8 Collector-Emitter Saturation Voltage (lc = 0.4 Ade , lB = 20 mAdc) (lc = 0.4 Ade , Iß = 40 mAdc) (lc = 1 Ade , lB = 0.2 Ade ) DC Current Gain (lc = 0.4 Ade , VCE = 1 Vdc) (lc = 1


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PDF BUD44D2 BUD44D2 69A-13 2PHX34547C-- BUD44D2/D
ADE 350

Abstract: No abstract text available
Text: to 150 Unit Vdc Vdc Vdc Vdc Ade Base Current - Continuous - Peak (1) *Total Device Dissipation @ Tc = 25 °C 'Derate above 25°C Operating and Storage Temperature Ade il Mi M M IH m Mi m MI , (V eb = 9 Vdc, lc = 0) ON CHARACTERISTICS Base-Emitter Saturation Voltage (lc = 10 Ade , lB = 2 Ade ) Collector-Emitter Saturation Voltage (lc = 2 Ade , lg = 0.4 Ade ) (lc = 10 Ade , Ib = 2 Ade ) (lc = 20 Ade , lB = 4 Ade ) DC Current Gain (lc = 20 Ade , Vce = 5 Vdc) @ Tc = 25°C @ Tc = 125°C @ Tc = 25°C @ Tc = 25°C @ Tc = 25


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PDF BUH150/D BUH150 2PHX34551C-0 ADE 350
Not Available

Abstract: No abstract text available
Text: JE18009 M JF18009 Unit Vdc Vdc Vdc Vdc Ade M JE 18009 M JF18009 POWER TRANSISTORS 10 AMPERES 1000 , A B Ade Watt W /°C °C V T j, Tstg V|SOL1 V|SOL2 V|SOL3 - 6 5 to 150 4500 3500 1500 , EB = 9 Vdc, lc = 0) ON CHA RA CTERISTICS B a se -E m itter Saturation Voltage (lc = 3 Ade , Iß = 0.3 Ade ) (lc = 5 Ade , lg = 1 Ade ) (lc = 7 Ade , lB = 1.4 Ade ) C o lle cto r-E m itte r Saturation Voltage (lc = 3 Ade , lB = 0.3 Ade ) v BE(sat) Sym bol Min Typ Max Unit VCEO(sus) 450


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PDF MJE18009/D MJE/MJF18009 221D-02 E69369 2PHX33547C-1 JE18009/D
EAKD

Abstract: BUW12A
Text: to +15 0 Watts VW°C °C Ade CASE 340-02 TO-218AC Unit Vdc Vdc Vdc Ade Ib Ib m Po Total Power , Reverse Biased BUW11 O N C H A R A CT ER IST IC S^) Collector-Emitter Saturation Voltage (lC = 1 Ade , Iq = 0.2 Ade ) {lC = 3 Ade , Iq = 0.6 Ade ) {(c = 3 Ade , Iq = 0.6 Ade , T c = 100°C) Base-Emitter Saturation Voltage (lC = 3 Ade , Iq =· 0.6 Ade ) (Iq = 3 Ade , Iß » 0.6 Ade , T c - 100°C) DC Current Gain dC = 3 Ade , V , Load (Table 2) Delay Time Rise Time Storage Time Fall Time dc = 3 Ade , V c c = 250 Vdc, Iq1 - 0.6 Ade


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PDF C0NTH01UNG O-218AC EAKD BUW12A
ge d45h11

Abstract: No abstract text available
Text: €” Pulsed (1) ic 'C M 10 20 Ade Base Current — Continuous — Pulsed (1) IB >BM 6 12 Ade Total Power Dissipation @ T q = 25°C (2) Derate above 25°C PD 35 0.28 Watts , Soldering Purpose (1) Pulse Test: Pu lse W idth = 5 ms, Duty Cycle =s 10%. (2) M e asu re m e n t m ade , Voltage dc = 30 mAdc, lg = 0) ON CHARACTERISTICS (1) DC Current Gain (Ic e = 2 Ade , V c e = 1 Vdc) (Ic e = 4 Ade , V c e = 1 Vdc) (ICE = 5 Ade , V c e = 1 Vdc) — Collector-Emitter Saturation


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PDF b3b72 MJF44H11/D D44H11 D45H11 MK145BP, MJF44H11 MJF45H11 ge d45h11
bip 373

Abstract: No abstract text available
Text: Unit Vdc Vdc Vdc Vdc Ade Ade Watt W/°C °C Tj> TS (g THERMAL CHARACTERISTICS Thermal , Base-Emitter Saturation Voltage (lc = 5 Ade , lB = 1 Ade ) Collector-Emitter Saturation Voltage (lc = 5 Ade , lB = 1 Ade ) (lc = 7 Ade , lB = 1.5 Ade ) @ Tc = 25°C @ Tc = 25°C @ Tc = 125°C @ Tc = 25°C @ Tc = 125 , 0.37 0.5 0.6 0.6 0.6 0.75 1.5 Vdc Vdc DC Current Gain (lc = 1 Ade , V ce = 5 Vdc) hFE 15 16 10 10 8 7 6 4 24 28 15 14.5 12 10.5 9.5 8 - (lc = 5 Ade , VCE = 5 Vdc) (lc = 7 Ade


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PDF BUH100/D BUH100 X34550C-0 bip 373
Not Available

Abstract: No abstract text available
Text: 'b IBM v ISOL - M JE18004 M JF18004 Unit Vdc Vdc Vdc Ade CASE 221A -0 6 T O -2 2 0 A B M JE18004 450 1000 9.0 5.0 10 2.0 4.0 4500 3500 1500 35 0.28 Ade Volts - - PD T j, TSfg 75 0.6 , se -E m itter Saturation Voltage (Iq = 1.0 Ade , Iß = 0.1 Ade ) (I q = 2.0 Ade , Iß = 0.4 Ade ) C o lle cto r-E m itte r Saturation Voltage (lc = 1.0 Ade , iß = 0.1 Ade ) (TC = 125°C) (I q = 2.0 Ade , Iß = 0.4 Ade ) (TC = 125°C) (I q = 2.5 Ade , Iß = 0.5 Ade ) DC Current Gain (Iq = 1.0 Ade , V q e = 2.5 Vdc) (T q =


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PDF MJE18004/D MJE/MJF18004 221D-02 O-220 E69369
tl 14641

Abstract: BUH50
Text: . Tgtg Value 500 800 800 9 4 8 2 4 50 0.4 - 6 5 to 150 Unit Vdc Vdc Vdc Vdc Ade Ade Watt W/°C , Voltage (lc = 1 Ade , lB = 0.33 Ade ) (lc = 2 Ade , lB = 0.66 Ade ) 25°C (lc = 2 Ade , lB = 0.66 Ade ) 100°C Collector-Emitter Saturation Voltage (lc = 1 Ade , lB = 0.33 Ade ) (ic = 2 Ade , lB = 0.66 Ade ) @ Tc = 25°C @ Tc = 25 , - - VcE(sat) (lc = 3 Ade , lB = 1 Ade ) DC Current Gain (lc = 1 Ade , V qe = 5 Vdc) (lc = 2 Ade , VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (lc = 0.5 Ade , V Ce = 10 Vdc, f = 1 MHz


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PDF BUH50/D BUH50 BUH50 21A-06 O-220AB tl 14641
MJH16004

Abstract: No abstract text available
Text: 6.0 5.0 10 4.0 8.0 80 32 0.64 - 6 5 t o + 150 Unit Vdc Vdc Vdc Ade Ade Watts W /°C °C "S , = 1.5 Ade , Iß = 0.2 Ade ) (I q = 1.5 Ade , Iß = 0.15 Ade ) (I q = 3.0 Ade , Iß = 0.4 Ade ) (I q = 3.0 Ade , Iß = 0.3 Ade ) (I q = 3.0 Ade , Iß = 0.4 Ade , T q = 100°C) (I q = 3.0 Ade , Iß = 0.3 Ade , T q = 100°C) B a se -E m itter Saturation (I q = 3.0 Ade , lB = 0.4 (I q = 3.0 Ade , Iß = 0.3 (I q = 3.0 Ade , ls = 0.4 (I q = 3.0 Ade , Iß = 0.3 Voltage Ade ) Ade ) Ade , T q = 100°C) Ade , T q = 100°C) v CE(sat) M JE16002


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PDF MJE16002/D 21A-06 O-220AB MJH16004
vce 1200 and 5 amps npn transistor to 220 pack

Abstract: motorola to-220 motorola transistor number 18 MJF18204
Text: MJF18204 Unit Vdc Vdc Vdc Vdc Ade CASE 221A-06 TO-220AB 600 1200 1200 10 c 10 Ade Volts ·Total , Base-Emitter Saturation Voltage (Iq = 1 Ade , Iß = 0.1 Ade ) (Iq = 2 Ade , Iß = 0.4 Ade ) Collector-Emitter Saturation Voltage (IC = 1 Ade , Iß = 0.1 Ade ) VßE(sat) 0.83 0.92 v CE(sat) @ TC = 25°C @ TC = 125°C @ T c = , Vdc 0.3 0.7 0.3 0.8 1 1.25 0.6 1.25 (IC = 2 Ade , Iß = 0.4 Ade ) DC Current Gain (IC = 0.5 Ade , VC e = 3 Vdc) 35 (IC = 1 Ade , V q e = 1 Vdc) (IC = 2 Ade , V q e = 1 Vdc) (IC = 5 mAdc, V c


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PDF MJE18204/D MJE/MJF18204 20ative 2PHX34557C-0 vce 1200 and 5 amps npn transistor to 220 pack motorola to-220 motorola transistor number 18 MJF18204
Not Available

Abstract: No abstract text available
Text: €” Continuous — Peak (1) ic 'c m 30 40 Ade Base Current — Continuous — Peak (1) Ib 'b m 20 30 Ade Total Power Dissipation @ T q = 25°C Derate above 25°C Pd 250 1.42 , Saturation Voltage (lc = 20 Ade , lB = 2 Ade ) (I q = 20 Ade , lg = 2 Ade ) @ T c = 100°C C o lle cto r-E m itte r Saturation Voltage (lC = 20 Ade , lB = 1.4 Ade ) (I q = 20 Ade , lg = 2.6 Ade ) (IC = 20 Ade , Iß = 2.6 Ade ) @ T q = 25°C @ T q = 25°C @ T C = 100°C DC Current Gain ( le = 30 Ade


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PDF J16020/D J16020 J16022 MJ16022 MJ16020 MJ16020/D
2n6338 MOTOROLA

Abstract: No abstract text available
Text: Cutoff Current (VgE = 6 0 Vdc, Iq = 0) 'CEO ON CHARACTERISTICS (1) DC Current Gain) (Iq = 0.5 Ade , V q e = 2.0 Vdc) (lc = 10 Ade , V q E = 2.0 Vdc) (Iq = 25 Ade , V q e = 2.0 Vdc) C ollector Em itter Saturation Voltage (Iq = 10 Ade , lg = 1.0 Ade ) (Iq = 25 Ade , Iß = 2.5 Ade ) B a se -E m itter Saturation Voltage (Iq = 10 Ade , lg = 1.0 Ade ) (Iq = 25 Ade , Iß = 2.5 Ade ) B a se -E m itter On Voltage (Iq = 10 Ade , Ade , V q e = 10 Vdc, ftest = 1° MHZ) ft 40 - - 300 MHz PF O utput Capacitance (V Q g = 1


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PDF 2N6338/D 2N6338 2N6339 2N6340 2N6341 2N6436-38 2n6338 MOTOROLA
transistor motorola 351

Abstract: 43b transistor Transistor 43B ANSI S 2.19
Text: 650 9 2 4 1 2 25 0.2 - 6 5 to 150 Unit Vdc Vdc Vdc Vdc Ade Ade Watt W/'-C "C MINIMUM PAD SIZES , CHARACTERISTICS Basc-Emitter Saturation Voltage (lc = 2 Ade , lB = 0.5 Ade ) Colloctor-Emitter Saturation Voltage (lc = 2 Ade , lB = 0.5Adc) DC Current Gain (lc = 1 Ade , VCE = 2 Vdc) (lc = 2 Ade , VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (lc = 0.5 Ade , VCE = 10 Vdc, f = 1 MHz) Output Capacitance (V.:B = 10 Vdc , . < 10%. Pulse Width = 20 us) Turn -on Time (lc = 1.2 Ade , lBi = 0 .4 Ade , Ib2 = 0.1 Ade , Vcc = 300 V


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PDF BUD43B/D BUD43B BUD43B 2PHX34546C-0 transistor motorola 351 43b transistor Transistor 43B ANSI S 2.19
Not Available

Abstract: No abstract text available
Text: €” Continuous — Peak (1) ic 'CM 15 25 Ade Base Current — Continuous — P e a k(1 ) 'b IBM 6 12 Ade ’ Total Device Dissipation @ T q = 25°C ’ Derate above 25°C Pd 150 , Saturation Voltage (I q = 2 Adc, Iß = 0.4 Ade ) v BE(sat) @ T q = 25°C @ T q = 125°C 1 1.25 Vdc v CE(sat) 0.16 0.15 0.4 0.4 Vdc (I q = 10 Ade , Iß = 2 Adc) @ T q = 25°C 0.45 1 Vdc (I q = 20 Ade , Iß = 4 Adc) @ T q = 25°C 2 5 Vdc DC Current Gain (I


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PDF BUH150/D BUH150
Not Available

Abstract: No abstract text available
Text: — Peak (1) 'c 'CM 10 20 Ade Base Current — Continuous — Peak (1) 'b IBM , ) (1s, 25°C, Hum idity < 30%) T q = 25°C H O perating and Storage Temperature Ade 50 0.4 , Current (V EB = 9 Vdc, IC = 0) ON CHAR A C TERISTICS B ase-E m itter Saturation Voltage (I q = 3 Ade , lg = 0.3 Ade ) (I q = 5 Ade , Iß = 1 Ade ) (I q = 7 Ade , lB = 1.4 Ade ) Vdc v BE(sat) 0.8 0.9 0.9 1.1 1.15 1.25 @ T c = 25°C @ T q = 125°C 0.3 0.3 0.6 0.65 (Iq = 5 Ade , Iß =


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PDF MJE18009/D JF18009 MJE/MJF18009 221D-02 O-220 E69369
L43B

Abstract: bip 373
Text: 'c m 'b 'b m Pd Value 350 650 650 9 2 4 1 2 40 0.32 - 6 5 to 150 Unit Vdc Vdc Vdc Vdc Ade Ade , Voltage (lc = 2 Ade , I b = 0.5 Ade ) C ollector-E m itter Saturation Voltage (IC = 2 Ade , Ib = 0.5 Ade ) C C Current Gain (IC = 1 Ade , V c e = 2 Vdc) (IC = 2 Ade , V c e = 5 Vdc) DYNAMIC CHARA CTERISTICS @ T C = 25 , hFE - 6 - T urn -o ff Time lc = 1 -2 Ade , IB 1 = 0.4 Ade Ifi2 = 0.1 Ade Vce = @ T , Ade , I b i = 0.5 Ade IB2 = 0-5 Ade VCC = 150 Vdc Motorola Bipolar Power Transistor Device Data


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PDF BUL43B/D -----------------------------2PHX34552C-0 L43B bip 373
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