The Datasheet Archive

ACY32/6 datasheet (2)

Part Manufacturer Description Type PDF
ACY32/6 Others Shortform Transistor Datasheet Guide Scan PDF
ACY32-6 Others Transistor Shortform Datasheet & Cross References Scan PDF

ACY32/6 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor DA 218

Abstract: Q62901-B1 Q60103-Y32-F Q60103-Y32-E Q60103-Y23-F Q60103-Y23-E ACY32V ACY32 ACY23V ACY23
Text: 500 0) NF 4(<10)* 3« 6 )' dB Operating point: -7C = 1 mA; hne 3 (1.2 to 5) 3 (1.2 to 5) kQ -VCE = 5 V , 23, ACY 32 101F 0 0,2 0,4 0, 6 0,8V -^K Permissible pulse load K rthjc = f(t); v= parameter W ACY 23 , (common emitter configuration) ACY23V. ACY32V K)° 6 101 6 102 B tfmA — -'c 103 s 102 6 DC currant gain , -m .—Scattering Rmii atTamb=25°C' 10° 5 101 6 102 B jfinA Output characteristics ic = f (Vce); 'b , 10"1 B 10° 6 101mA ——k 92 1522 0-05


OCR Scan
PDF 00QMQ41 ACY23 ACY32 Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1 fl23SbQS 000404b transistor DA 218 Q62901-B1 ACY32V ACY23V
transistor k520

Abstract: IC K520 transistor ACY PNP acy transistor ACY32 Q60103-Y23-E ACY23V Q60103-Y32-E Q60103-Y32-F Q62901-B1
Text: (-/c = 0.5 mA; -vce = 5V;f = 1 kHz; \f = 200 Hz; Rg = 500 Q) NF 4(<10)* 3« 6 )' dB , 0 0,2 0,4 0, 6 0,8V -^K Permissible pulse load K rthjc = f(t); v= parameter W ACY 23, ACY 32 1q2 , - ' Ce) -Vce = O.B V; r»mb = parametèr (common emitter configuration) ACY23V. ACY32V K)0 6 101 6 102 5 tfmA — •k K)3 5 10* 6 DC currant gain hfB - I Ce) -Vce = 0.5 V; Fana, = parameter , 'AGY32 10~2 5 10"1 5 TO0 6 101mA ——k 92 1522 0-05


OCR Scan
PDF ACY32 Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1 fl23SbOS QQQ404b ACY23 transistor k520 IC K520 transistor ACY PNP acy transistor ACY32 Q60103-Y23-E ACY23V Q60103-Y32-E Q60103-Y32-F Q62901-B1
103MA

Abstract: Q62901-B1 transistor ACY PNP Q60103-Y32-F ACY 23 V legiert
Text: ) F 4 (< 10)* 3 (< 6 )* dB Arbeitspunkt: -7C = 1 mA; 3 (1,2 bis 5) 3 (1,2 bis 5) kü -t/CE = 5V;/ = , Gesamtverlustleistung ''tot = f (T); /?th = Parameter W ACY 23, ACY 32 1,0 0,8 0, 6 0A \ \ \ flm Amt , (Uee) ~Uce = 0,5 V, Tu = Parameter (Emitterschaltung) mA ACY 23, ACY 32 103: -k 0 0,2 0,4 0, 6 0,8V -"i/BE 0,2 0,4 0, 6 0,8 V — 83 ACY 23 ACY 32 Stromverstärkung B = f (/c) -Uce = 0,5 V; Tu = , ) Rb = 500 Q; f = 1 kHz; -/c = 0,5 mA dB ACY 32 6 10"' 5 10° 5 101V - Rauschmaß in Abhängigkeit


OCR Scan
PDF Q60I03-Y23-E Q60I03-Y23-F Q60130-Y32-E Q60103-Y32-F Q62901-B1 /ACY32 101mA 103MA Q62901-B1 transistor ACY PNP Q60103-Y32-F ACY 23 V legiert
AC187K

Abstract: AC188K AC181 NS257 AC153K AC126 ac128 AC128K GERMANIUM SMALL SIGNAL TRANSISTORS AC180K
Text: 6 6 6 6 10 8 8 8 18 10 40-200 40-200 50-140 40-170 50- 2' 2' 20 150 2 211 21J 211 50 1.3 TO , 10 10 18 12 20 20 6 0.5 10 10 18 10 15 15 40- 1351- 30- 40-160 150 20 5' 400 401 2.0 1.3 , -1 TO-1 10 6 6 35 35 IO2 50- 50-250 60-60- 50-250 V 300 150 150 600 100' 1.0 2.5J TO-1 TO , 12 16 30 20 20 15 30 20 6 6 6 30 10 10 10 12 50-145 90-250 30-300 50- 20-55 50 50 300 l1


OCR Scan
PDF AC107 ACI16 AC117 AC121â NS257 NS257 AC124 AC187K AC188K AC181 AC153K AC126 ac128 AC128K GERMANIUM SMALL SIGNAL TRANSISTORS AC180K
AC188

Abstract: AC187K NS257 AC187 GERMANIUM AC132 AC188K AC178 AC188 ac187 AC176 AC127
Text: Min @25°C MW AC 107 P 15 35- 300' TO-1 80 AC116 P 30 12 18 6 8 50-140 20 212 NS257 145 AC117 P 32 10 18 6 18 40- 150 NS257 260 AC121—IV P 20 10 20 30-60 100 40 1.5» TO-1 900 , AC121—VII P 20 10 20 125-250 100 40 1.52 TO-1 900 AC 122 P 30 18 18 6 8 40-200 2' 21' TO-1 130 AC 122/30 P 45 12 32 6 8 40-200 2' 212 TO-1 130 AC 123 P 45 12 32 6 8 50-140 20 2r NS257 145 AC124 P 45 10 32 6 18 40-170 150 NS257 260 AC 125 P 32 10 12 10 10 50- 2 50 1.3 TO-1 500 AC 126 P 32 10


OCR Scan
PDF AC116 NS257 AC117 AC121â AC124 AC188 AC187K AC187 GERMANIUM AC132 AC188K AC178 AC188 ac187 AC176 AC127
ac128

Abstract: AC128K ac117 GERMANIUM SMALL SIGNAL TRANSISTORS Germanium power AC184 AC123 ac125 germanium germanium ac Germanium Power Devices ac125
Text: 20 15 30 20 15 15 20 30 6 6 8 18 3550-140 4030-60 50-100 75-150 125-250 300' 20 150 100 , 900 6 6 6 6 10 10 10 10 6 0.5 10 10 10 10 10 10 0.5 10 10 10 10 10 6 6 8 8 8 18 10 10 10 10 18 , ' 0.4 0.4 1.0 1.0 1.3 1.0 1.3 1.0 0.5 1.02 1.02 1.02 1.0* 1.01 0.5 10 10 10 10 10 10 10 10 5 5 6 6 6 6 6 6 30 30 30 30 12 10 35 35 15 15 15 15 35 35 12 12 10 10 10 10 10 10 12 12 12 12 5 10 180 , * 070 M AX. r -33 m .009 T i .2^0 .240 í i 1 ° 27 f .019 .0 1 6 i JI .115


OCR Scan
PDF AC107 AC116 AC117 AC121--IV AC121--V AC121--VI AC121--VII AC123 AC124 AC125 ac128 AC128K GERMANIUM SMALL SIGNAL TRANSISTORS Germanium power AC184 ac125 germanium germanium ac Germanium Power Devices ac125
1997 - BPW50

Abstract: tda1000 cqy17 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR 74LS00A GaAs tunnel diode BPW50-9 BD232 DIODE BZW70
Text: tolerance of the Zener voltage. Examples: BPW50- 6 , BPW50-9, BPW50-12. A 1% B 2% One


Original
PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 cqy17 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR 74LS00A GaAs tunnel diode BPW50-9 BD232 DIODE BZW70
DIODE BZW70

Abstract: cqy17 Germanium Diode aa112 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor AA112 germanium diode smd BYT-100
Text: . Examples: BPW50- 6 , BPW50-9, BPW50-12. H ig h f r e q u e n c y p o w e r t r a n s is t o r s One


OCR Scan
PDF BZW10-15B. BYT-100 -100R. DIODE BZW70 cqy17 Germanium Diode aa112 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor AA112 germanium diode smd
tda1000

Abstract: Germanium Diode aa112 BPW50 cqy17 BD232 PHILIPS SEMICONDUCTOR 74LS00A BZW10-15 BPW50-12 BZY74-C6V3 germanium diode smd
Text: array. Examples: BPW50- 6 , BPW50-9, BPW50-12. H ig h f r e q u e n c y p o w e r t r a n s is t o r s


OCR Scan
PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: tda1000 Germanium Diode aa112 BPW50 cqy17 BD232 PHILIPS SEMICONDUCTOR 74LS00A BZW10-15 BPW50-12 BZY74-C6V3 germanium diode smd
2010 - 2N2431

Abstract: Low-Power Germanium PNP AC184 2N544 JI 32 2N504 SK3008 2n3325 ac125 germanium germanium
Text: No file text available


Original
PDF AC153 AC153K 2N2431 AC126 ACY23 ACY23V ACY32 AC125 AC191 Low-Power Germanium PNP AC184 2N544 JI 32 2N504 SK3008 2n3325 ac125 germanium germanium
tda1000

Abstract: TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112
Text: The number indicates the number of basic devices assembled into the array. Examples: BPW50- 6 , BPW50


OCR Scan
PDF PCF1105WP: GMB74LS00A-DC; 74LS00A; TDA1000P: SAC2000: tda1000 TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112
BPW50

Abstract: tda1000 74LS00A
Text: . Examples: BPW50- 6 , BPW50-9, BPW50-12. H ig h f r e q u e n c y p o w e r t r a n s is t o r s One


OCR Scan
PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 74LS00A
NB ad smd transistor

Abstract: 8048 microcontroller BPW50-12 PCF1105WP smd zener diode code DK PCF-1105 BYT 100 tda1000
Text: devices assembled into the array. Examples: BPW50- 6 , BPW50-9, BPW50-12. H ig h f r e q u e n c y p o w e , t sw itching levels, supply voltage range 2 V to 6 V, fu lly buffered = T T L in p u t sw itching


OCR Scan
PDF
tda1000

Abstract: 74LS00A BPW50 Germanium Diode aa112
Text: number of basic devices assembled into the array. Examples: BPW50- 6 , BPW50-9, BPW50-12. H ig h f r e q u


OCR Scan
PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: tda1000 74LS00A BPW50 Germanium Diode aa112
tda1000

Abstract: Germanium Diode aa112 BPW50 PCF-1105WP 74LS00A PCF1105 BZW70 9v1 zener diode circuits
Text: number of basic devices assembled into the array. Examples: BPW50- 6 , BPW50-9, BPW50-12. H ig h f r e q


OCR Scan
PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: tda1000 Germanium Diode aa112 BPW50 PCF-1105WP 74LS00A PCF1105 BZW70 9v1 zener diode circuits
tda1000

Abstract: 74LS00 20 PIN LEADLESS CHIP CARRIER THICK FILM smd dual diode code 1c
Text: The number indicates the number of basic devices assembled into the array. Examples: BPW50- 6 , BPW50


OCR Scan
PDF PCF1105WP: GMB74LS00A-DC; 74LS00A; TDA1000P: SAC2000: tda1000 74LS00 20 PIN LEADLESS CHIP CARRIER THICK FILM smd dual diode code 1c
AC127

Abstract: CV7089 ad161 OC71 AC125 2SB415 HJ17D 2N3278 cv8615 ad142
Text: , 2N34-43-44-60-61-180-185-187, 2S37, AC106-128-132-153-177. 6 2N110 2N111 2N111A 2N112 2N113 2N114 2N115 2N116 2N117 2N118


OCR Scan
PDF 2N24A 2N34A 2N38A 2N43A 2N44A 2N59C 2N60A 2N61A 2N61B OC77-309, AC127 CV7089 ad161 OC71 AC125 2SB415 HJ17D 2N3278 cv8615 ad142
AC176

Abstract: AC184 AC127 AC128 2N2635 AC122 2N1377 GERMANIUM SMALL SIGNAL TRANSISTORS 2N634 AC187 2N1924
Text: 16 16 18 16 16 16 15 15 15 15 15 15 15 15 30 30 32 30 30 20 20 15 30 20 15 15 20 30 6 6 8. 18 , 260 150 150 200 200 200 200 200 200 900 200 200 200 200 200 900 6 6 6 6 10 10 10 10 6 0.5 10 10 10 10 10 10 0.5 10 10 10 10 10 6 6 8 8 8 18 10 10 10 10 18 10 15 15 35 15 15 10 10 10 10 10 10 35 35 , 1.0* 1.0* 1.0* 1.0* 1.0* 0.5 10 10 10 10 10 10 10 10 5 5 6 6 6 6 6 6 30 30 30 30 12 10 35 35 15 , 32 60 40 35 10 10 10 10 16 16 10 16 15 10 30 30 30 6 6 6 6 30 25 5 5 10 12 12 12 10 10 10 10 7


OCR Scan
PDF 3T473 00Q05Q? AC107 AC116 AC117 AC121--IV AC121--V AC121--VI AC121--VII AC122 AC176 AC184 AC127 AC128 2N2635 2N1377 GERMANIUM SMALL SIGNAL TRANSISTORS 2N634 AC187 2N1924
AL102 ATES

Abstract: 2N2222A mps KR206 AD149 SFT353 TIS88 2N4265 2N2431 TIS58 2SC984
Text: 20417 20526 20577 201024/5/ 6 AC126r163-171-173, 2SB450, 2N506-2907, AF139, NKT677F. AF106 , . BCY29-32, MPS3703. MPS3703. GFT31/15, MPS3702, SFT124. MPS37Q2. 2N1502-4106. BC140- 6 , MPSH34. BC140- 6 , BFY10, MPSH34. A ^H B C 1 4 0 -1 4 0 / 6 , B8Y44, MP8H34,2N1613. ASY27, BC140-140/ 6 , BSY44, MPSH34, 2N1613. MPSH34. ASY14, BC140-140/ 6 , BSY44, MPSH34, 2N1813. MPSH34. ASY14, BC140-140/ 6 , BSY44, MPS3710 , , OC78-80. 2N581-1308. _ API 37, ASY26-27,0 6 4 6 ,2N1305. ASY27, 2N1307. AD150, TI3027,2N2836. A0131


OCR Scan
PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 SFT353 TIS88 2N4265 2N2431 TIS58 2SC984
sx3704

Abstract: AP239 Transistor 80139 8C547 2N50B IN2222A 6C131C radio AC176 AC126 sft353 2N2064
Text: = = = = green grey red yellow blue 2 2 3 MANUFAC 4 EU R O P EA N 5 | 6 A M E R IC A N JAP , table) 5. 6 . EUROPEAN European equivalent / (.) near equivalent 7, 8. AMERICAN American equivalent , 136—4 AC 1 3 9 -S AC136— 6 AC141 G G G G G P P P P N AC 138 AC 138 AC136H AC 138—4 AC 1 3 6 - 6 AT , AC142—4 AC142— 6 AC142— 6 G G G G P P P P AC163KVI AC163V AC153V AC176VI AC176 2N647 2742430 01 01 01 01 01 AC176K AC178K AC176K AC 176 AC176 AC 1 4 1 - 6 AC142 AC142 AC142 AC142H AT AT AT AT


OCR Scan
PDF
transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: . 28 28 29 30 30 31 31 31 31 6 . 6.1. 6.2. T ransistorvergleichsliste , ) Y21b = - (Y2ie + Y22e) Y 22b = Y22e 5 . 6 . B erech n u n g der Y -P a ra m eter der E m itter , : fh21b I h 21e ^ - h21e Die Übergangsfrequenz fh2 ib 1)2 fr 34 6 . T ra n sisto rv e rg le ic h sliste 6 .1 . T yp p np -G erm an iu m tran sistor für rau sch arm e N F -E , ,000) 5 (2,100) 10 1,5( 6 ) 15 55( 6 ) 800 50(15) 15 500 5 15 10 15 2 9 . . . P C =


OCR Scan
PDF
APY12

Abstract: BAV77 ac176 BYY32 AEY26 af124 AEY30B zener 9A2 5T acy23 ac188
Text: NUMBER indicates how many basic devices are assembled into the array. Example : BPW50/ 6 , BPW50/9 , : BPW50/ 6 , BPW50/9 , BPW50/12 NOTE : Faible puissance : Puissance j_mb > 15°C/W : Rt h j . mb i , mit Bandstand D, 6 - 1,D eV B. SILIZIUM Oder ander Material mit Bandstand 1,0 - 1,3 eV C. GALL , Zeile eingebaut sind. Beispiel : BPW50/ 6 , BPW50/9 , BPW50/12 NOTE : Kleine Leistung : Rtb j_mb , BAV85A BAV 8 6 BAV87 BAV 8 8 BAV89 BAV92 BAV93 BAV94 BAV96A " » » " " " " " " 74


OCR Scan
PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BAV77 ac176 BYY32 AEY26 af124 AEY30B zener 9A2 5T acy23 ac188
k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: tillkommer på samtliga priser www.bhiab.se 6 Metallsfilmsmotstånd 1% Pris vid köp av 1 ohm till 10 , Tantalkond. TA0-044 330µF3V Tantalkond. TA0-045 47µF 6 ,3V Tantalkond TA0-046 150µF 6 ,3V Tantalkond , 35V Tantalkond. TA0-031 47.0µF 35V Tantalkond. TA0-070 6 ,8µF 50V Tantalkond RM 5mm


Original
PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 2N339 C24850772 bc149c 2sb508 S9510
Text: . Page 6 Specifications and Electrical C haracteristics of ARCHER T , observe voltage polarity with all semiconductor devices. 6 SPECIFICATIONS and ELECTRICAL , 15 40 at 1 kHz (typical) at 6 MHz (typical) MHz f i a (max) IXs (max) l . 20 volts 1.5 , Constant Noise Figure at 60 MHz 1 fj.a (max at 150° C) 20 (minimum) 8 psec 3 dB (typical) 6 dB , . 6 volts Collector Current


OCR Scan
PDF
IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: 1.5 (>0.5) 1.5 (>0.5) MHz 'bb- 75 (<200) 75 (<200) n cb.,c 27 27 pf NF 4 (<10)* 3 ( < 6 ) * db 3 (1.2 , ( 20 r nA r 10mA r 6 ■'"CE Output characteristics Ic=f , ) NF 4.8 db Noise figure (f= 200 MHz; /?g = 60Q) NF 6 db AC forward current transfer ratio (f= 1 kHz , to 40) 50 (25 to 120) * 0.325 (0.25 to 0.38) 6 2 29 70 0.34 (0.28 to 0.4) Collector-base-cutoff , 31 mmhos 5,12b=0mmhos 6nb = -12 mmhos Cl1b=-9.5 pf Test condition: - Jc = gUb=36 mmhos 611b = — 6


OCR Scan
PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Supplyframe Tracking Pixel