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LT1126IJ8 Linear Technology IC DUAL OP-AMP, 100 uV OFFSET-MAX, CDIP8, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1127IS Linear Technology IC QUAD OP-AMP, 100 uV OFFSET-MAX, PDSO, Operational Amplifier
LT1124CS Linear Technology IC DUAL OP-AMP, 100 uV OFFSET-MAX, PDSO, Operational Amplifier
LT1124CJ Linear Technology IC DUAL OP-AMP, 100 uV OFFSET-MAX, CDIP, 0.300 INCH, HERMETIC SEALED, CERDIP, Operational Amplifier
LT1079MN Linear Technology IC QUAD OP-AMP, 100 uV OFFSET-MAX, PDIP, 0.300 INCH, PLASTIC, DIP, Operational Amplifier
LT1124CN Linear Technology IC DUAL OP-AMP, 100 uV OFFSET-MAX, PDIP, 0.300 INCH, PLASTIC, DIP, Operational Amplifier

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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
ABD-100 IDEC Corporation Master Electronics 50 $11.73 $7.52
ABD-100 IDEC Corporation Sager 2 $8.38 $7.42
ABD-100 IDEC Corporation Newark element14 5 $12.60 $9.37
ABD-100 IDEC Corporation Allied Electronics & Automation 10 $12.60 $9.37
ABD100-B IDEC Corporation Sager 0 $8.54 $7.57
ABD100-G IDEC Corporation Sager 0 $8.54 $7.57
LXFHABD-100S-X20 SMC Corporation of America Allied Electronics & Automation 0 $1909.60 $1909.60
LXFHABD-100SB-GN-X20 SMC Corporation of America Allied Electronics & Automation 0 $2113.89 $2113.89
LXFHABD-100SB-X20 SMC Corporation of America Allied Electronics & Automation 0 $2102.97 $2102.97
LXPBABD-100-X12 SMC Corporation of America Allied Electronics & Automation 0 $1033.71 $1033.71
LXPBABD-100-X18 SMC Corporation of America Allied Electronics & Automation 0 $1736.46 $1736.46
LXPBABD-100S-X18 SMC Corporation of America Allied Electronics & Automation 0 $1760.00 $1760.00
LXPBABD-100S-X18A SMC Corporation of America Allied Electronics & Automation 0 $727.89 $727.89
LXPBABD-100S-X21 SMC Corporation of America Allied Electronics & Automation 0 $2139.09 $2139.09
LXPBABD-100SB-M9N1-X13 SMC Corporation of America Allied Electronics & Automation 0 $1465.14 $1465.14
LXSHABD-100S-M9N1-X12A SMC Corporation of America Allied Electronics & Automation 0 $1089.49 $1089.49
LXSHABD-100S-M9NL1-X18A SMC Corporation of America Allied Electronics & Automation 0 $1196.51 $1196.51
LXSHABD-100S-X18 SMC Corporation of America Allied Electronics & Automation 0 $1151.49 $1151.49
LXSHABD-100SB-M9NL2-X18 SMC Corporation of America Allied Electronics & Automation 0 $1939.94 $1939.94
LXSHABD-100SB-M9NL2-X18A SMC Corporation of America Allied Electronics & Automation 0 $1142.17 $1142.17
MX555ABD100M000 Microchip Technology Inc microchipDIRECT 390 $2.45 $1.80
MX555ABD100M000 Microchip Technology Inc Avnet 50 $2.19 $1.99
MX555ABD100M000 Microchip Technology Inc Chip1Stop 30 $4.01 $3.37
MX555ABD100M000-TR Microchip Technology Inc microchipDIRECT 0 $2.45 $1.80
MX555ABD100M000-TR Microchip Technology Inc Avnet 0 $2.19 $1.99
MX575ABD100M000 Microchip Technology Inc Chip1Stop 50 $3.94 $2.59
MX575ABD100M000 Microchip Technology Inc Avnet 344 $2.19 $1.89
MX575ABD100M000 Microchip Technology Inc microchipDIRECT 559 $2.41 $1.76
MX575ABD100M000-TR Microchip Technology Inc Avnet 0 $2.19 $1.89

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ABD-100 datasheet (1)

Part Manufacturer Description Type PDF
ABD-100 IDEC SWITCH ACCESS PUSH BUTTON MUSHROOM OPERATOR Original PDF

ABD-100 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - HFB50HC20C

Abstract:
Text: Fig. 2 - - - - 10 100 µA µA VR = VR Rated VR = V R Rated, TJ = 125°C CT , HFB50HC20C 100 100 125°C 100 °C Reverse Current - I R (µA) 75°C 1 0.1 25°C 0.01 0.001 , 1.2 1.6 2.0 100 0 Forward Voltage Drop - V F (V) 40 80 120 160 200 , 120 100 VR = 160V IF = 100A TJ = 125°C TJ = 25°C 100 IF = 50A IRRM - ( A , °C TJ = 25°C 20 1 100 1000 100 dif / dt - ( A / µs ) 1000 dif / dt - ( A / µs


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PDF 94238B HFB50HC20C HFB50HC20C IRFP250
Not Available

Abstract:
Text: Reverse Leakage Current See Fig. 2 — — — — 10 100 µA µA VR = VR Rated VR = , Weight Typ. Max. Units — 10.9 0.96 — ° C/W g www.irf.com HFB50HC20C 100 100 125° C 100° C Reverse Current - I R (µA) 75° C 1 0.1 25° C 0.01 , ° C 1 0.0 0.4 0.8 1.2 1.6 2.0 100 0 Forward Voltage Drop - V F (V) 40 , ) www.irf.com 3 HFB50HC20C 120 100 VR = 160V IF = 100A TJ = 125°C TJ = 25°C 100 IF =


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PDF 94238B HFB50HC20C
1999 - ABD 0013

Abstract:
Text: 32.5 V ≤ 1.4 V /0.01-200kHz 46 V in 100 ms 600 V at 5 µs ≤ 10 mA > 500 V > 100 MOhm at 45 V , ≤ 100 µA Yes Environmental Specifications : Operating temperature range Storage temperature


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PDF ZS-00370-01 hous007, RTCA/DO-160C, MIL-HDBK-217 ABD 0013
922AA2Y-A6P-Z722A

Abstract:
Text: Insulation resistance 46 V in 100 ms 600 V at 5 µs 10 mA > 500 V > 100 MOhm at 45 V ABD 0013 , FALLING to 200 at +85° C 100 µA Yes Environmental Specifications : Operating temperature range


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PDF 922AA2Y-A6P-Z722A RTCA/DO-160C, RTCA/DO-160C MIL-STD-461 MIL-HDBK-217 922AA2Y-A6P-Z722A transistor a6p DO-160C 922AA2Y-A6P-Z722
1999 - ASN-E0053

Abstract:
Text: /0.01-200 kHz 46 V at 100 ms 600 V at 5 µs < 10 mA > 500 V > 100 MOhm at 45 V 10 mOhm at 100 mA 8 mOhm at 100 mA ABD 0013, 6-1, 6-2, 6-3-4 ABD 0013, 6-4 ABD 0013, 6-3-1 ABD 0013, 6-3-3 ABD 0007, 2-3.7.1 ABD 0007, 2-3.7.2 ABD 0007, 2-3.8.3 Output 2.0 V at 0.12 A 120 mA 100 µA yes On , shock Constant acceleration Fungi Pollution Magnetic effects -55° C to +90° C -55° C to + 100 ° C


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PDF ZS-00341 b160C, RTCA/DO-160C, TS-600077O TS-301089 TS-6000770 ZS-00341-01 ZS-00341-02 ASN-E0053 asne0053 ABD 0007 ZS 633 asne0053n8b3pnf asn-E0053N8B3PNF 0007 ABD 0013 ABD0013 ZS-00341-02
2006 - HFB16HY20CC

Abstract:
Text: Fig. 2 - - - - 10 100 µA µA VR = VR Rated VR = V R Rated, TJ = 125°C CT , www.irf.com HFB16HY20CC 100 100 125°C Reverse Current - I R ( uA ) 100 °C 1 75°C 0.1 , °C 100 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 Forward Voltage Drop , ) IF = 16A 60 trr - ( ns ) 100 VR = 160V IF = 32A 50 IF = 32A IF = 8.0A 10 40 VR = 160V TJ = 125°C TJ = 25°C 30 20 1 100 1000 100 1000 dif / dt - ( A / µs


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PDF 94223B HFB16HY20CC HFB16HY20CC IRFP250
922FS

Abstract:
Text: mm 2.80 mm Specification (Note 1) Note 2 14 to 32.5 V 1.4 V /0.01-200 kHz 46 V in 100 ms 600 V at 5 µs 10 mA > 500 V > 100 MOhm at 45 V RTCA/DO-160C, CAT A RTCA/DO-160C, CAT A RTCA , Off state leakage current Overload protection 1.65 at 250 mA 250 mA 100 µA Yes


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PDF 922FS2-A6N-Z735A RTCA/DO-160C, MIL-STD-461 MIL-HDBK-217 922FS DO-160C 12MM 922fs2 922FS2-A6N-Z735A Hydraulic Power Transmission
landing gear proximity switches

Abstract:
Text: /0.01-200kHz 46 V in 100 ms 600 V at 5 µs 10 mA > 500 V > 100 MOhm at 45 V ABD ABD ABD ABD 0013 , 1.65 V at 250 mA 250 mA to +20° C LIN FALLING to 200 mA at +85° C 100 µA Yes Environmental


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PDF ZS-00370-01 the07, RTCA/DO-160C, MIL-HDBK-217 landing gear proximity switches DO160C 0007 ABD0013 DO-160C mist water surface level element datasheet ZS 633 ZS-60000
Not Available

Abstract:
Text: €” — — — — — — — — — — — — — 7.0 100 - 100 50 10 25 35 , Irradiation ÄÅ C, Parameter 100 K Rads(Si)1 300K - 1000K Rads (Si)2 Test Conditions Units , €” — — 4.0 100 - 100 25 0.40 200 1.25 — — — — — 4.5 100 - 100 25 , (µm) 43 39 VDS(V) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 190 180 170 125 — 100 100 100 50 — 200 VDS 150 Cu 100 Br 50 0 0 -5 -10 -15 -20 VGS


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PDF PD-91273E IRHY7230CM JANSR2N7381 MIL-PRF-19500/614 O-257AA) IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM 1000K
2006 - Not Available

Abstract:
Text: €” 6.8 100 - 100 42 10 20 15 40 35 15 — Ciss Coss Crss Rg Input Capacitance Output , €” 4.0 100 - 100 10 — Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source , 3 IRHYS67230CM Pre-Irradiation 100 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V , °C 0.1 10 1 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 0.1 VDS , ) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) T J = 150°C 2 10 100


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PDF PD-96925A O-257AA) IRHYS67230CM IRHYS67230CM IRHYS63230CM O-257AA 90MeV/
Not Available

Abstract:
Text: Reverse Leakage Current See Fig. 2 — — — — 10 100 µA µA VR = VR Rated VR = , HFB16HY20CC 100 100 125° C Reverse Current - I R ( uA ) 100° C 1 75° C 0.1 25° C , 25° C 100 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 Forward , IF = 16A IRRM - ( A ) IF = 16A 60 trr - ( ns ) 100 VR = 160V IF = 32A 50 IF = 32A IF = 8.0A 10 40 VR = 160V TJ = 125°C TJ = 25°C 30 20 1 100 1000


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PDF 94223B HFB16HY20CC
43af

Abstract:
Text: Dielectric strength Insulation resistance 14 to 32.5 V 1.4 V /0.01-200 kHz 46 V in 100 ms 600 V at 5 µs 10 mA > 500 V > 100 MOhm at 45 V RTCA/DO-160C, CAT RTCA/DO-160C, CAT RTCA/DO-160C, CAT , voltage Load current Off state leakage current Overload protection 1.65 V at 250 mA 250 mA 100


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PDF ZS-00417-02 RTCA/DO-160C, MIL-STD-461 MIL-HDBK-217 43af 12MM ZS-00417-02
2006 - IRHF58Z30CM

Abstract:
Text: ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100 °C Units Continuous Drain Current , - - - - - - - - - - - - - - - - - - - 6.8 100 - 100 65 20 10 25 100 35 30 - C iss C oss C rss Input Capacitance Output Capacitance Reverse , 100 - 100 10 0.025 30 1.5 - - - - - 4.0 100 - 100 25 0.03 µA VGS = 0V , refer to the last page www.irf.com 3 IRHY57Z30CM, JANSR2N7482T3 100 Pre-Irradiation


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PDF PD-93824E IRHY57Z30CM JANSR2N7482T3 O-257AA) MIL-PRF-19500/702 IRHY57Z30CM IRHY53Z30CM JANSF2N7482T3 IRHY54Z30CM IRHF58Z30CM JANSR2N7482T3
2006 - IRF N-Channel Power MOSFETs

Abstract:
Text: Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100 , - 7.0 100 - 100 50 10 25 35 75 70 60 - BV DSS /T J Temperature Coefficient of , . Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter 100 K Rads , RDS(on) RDS(on) VSD Min Max 200 2.0 - - - - - 4.0 100 - 100 25 0.40 200 1.25 - - - - - 4.5 100 - 100 25 0.53 µA VGS = 0V, ID = 1.0mA VGS = VDS, ID =


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PDF PD-91273E IRHY7230CM JANSR2N7381 MIL-PRF-19500/614 O-257AA) IRHY7230CM IRHY3230CM IRHY4230CM IRHY8230CM 1000K IRF N-Channel Power MOSFETs JANSR2N7381
Not Available

Abstract:
Text: €” — — — — — — — — — — — — — — 6.8 100 - 100 65 20 10 25 100 35 30 — C iss C oss C rss Input Capacitance Output Capacitance Reverse , €” 4.0 100 - 100 10 0.025 30 1.5 — — — — — 4.0 100 - 100 25 0.03 µA â , refer to the last page www.irf.com 3 IRHY57Z30CM, JANSR2N7482T3 100 Pre-Irradiation 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 10 5.0V 5.0V 10 20µs


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PDF PD-93824E IRHY57Z30CM JANSR2N7482T3 O-257AA) MIL-PRF-19500/702 IRHY57Z30CM IRHY53Z30CM JANSF2N7482T3 IRHY54Z30CM
1999 - 12MM

Abstract:
Text: Dielectric strength Insulation resistance 14 to 32.5 V 1.4 V /0.01-200 kHz 46 V in 100 ms 600 V at 5 µs 10 mA > 500 V > 100 MOhm at 45 V RTCA/DO-160C, CAT RTCA/DO-160C, CAT RTCA/DO-160C, CAT , voltage Load current Off state leakage current Overload protection 1.65 V at 250 mA 250 mA 100


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PDF ZS-00417-02 RTCA/DO-160C, MIL-STD-461 MIL-HDBK-217 12MM 43af ZS-00417-02 ZS-00417-02 weight
2006 - JANSR2N7380

Abstract:
Text: , TC = 25°C ID @ VGS = 12V, TC = 100 °C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG , Drain-to-Source Breakdown Voltage 100 - - V - 0.11 - V/°C - - 2.0 2.5 - - , - - - - - - - - - 7.0 100 - 100 50 10 20 35 75 70 60 - BVDSS /T J , Conditions Units Max Min Max 100 2.0 - - - - - 4.0 100 - 100 25 0.18 100 1.25 - - - - - 4.5 100 - 100 25 0.24 V - 0.18 - 0.24 VGS = 12V


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PDF 91274E IRHY7130CM JANSR2N7380 MIL-PRF-19500/614 O-257AA) IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM 1000K JANSR2N7380 Accelerometers datasheet 8303a
2006 - IRHF58034CM

Abstract:
Text: ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100 °C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt , 6.8 100 - 100 45 10 15 25 100 35 30 - Ciss C oss C rss Input Capacitance Output , 100 - 100 10 0.044 60 1.5 - - - - - 4.0 100 - 100 25 0.053 µA - 0.04 , Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 VGS 15V 12V 10V , Current (A) TOP 10 5.0V 1 100 10 5.0V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1


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PDF 93825D IRHY57034CM JANSR2N7483T3 O-257AA) MIL-PRF-19500/702 IRHY57034CM IRHY53034CM JANSF2N7483T3 IRHY54034CM IRHF58034CM JANSR2N7483T3
2006 - JANSR2N7484T3

Abstract:
Text: Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100 °C IDM PD @ TC = 25°C VGS EAS IAR EAR , °C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 100 - - , 6.8 100 - 100 50 7.4 20 25 100 35 30 - Ciss C oss C rss Input Capacitance Output , On-State Resistance (TO-257AA) Diode Forward Voltage à Test Conditions 100 2.0 - - - - - 4.0 100 - 100 10 0.074 100 1.5 - - - - - 4.0 100 - 100 25 0.09 nA µA


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PDF 93826D IRHY57130CM JANSR2N7484T3 O-257AA) MIL-PRF-19500/702 IRHY53130CM IRHY54130CM JANSF2N7484T3 JANSR2N7484T3 diode.18 IRHY53130CM IRHY54130CM IRHY57130CM JANSF2N7484T3 JANSG2N7484T3 JANSH2N7484T3
Not Available

Abstract:
Text: Specified) Parameter Min Drain-to-Source Breakdown Voltage 100 — — V — 0.11 , €” — — 7.0 100 - 100 50 10 20 35 75 70 60 — ∆BVDSS/∆T J Temperature , Units Max Min Max 100 2.0 — — — — — 4.0 100 - 100 25 0.18 100 1.25 — — — — — 4.5 100 - 100 25 0.24 V — 0.18 — 0.24 Ω VGS , @VGS=-10V @VGS=-15V @VGS=-20V 100 100 100 80 60 100 90 70 50 — 120 100 VDS 80 Cu 60


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PDF 91274E IRHY7130CM JANSR2N7380 MIL-PRF-19500/614 O-257AA) IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM 1000K
2011 - Not Available

Abstract:
Text: (Annealed) · Solder Reflow Temperature: Pure-Tin - Sn, 100 : 260-270°C · 8mm Tape and Reel Per EIA Standard , ,000 PPP - Peak Pulse Power - Watts 1,000 400W, 8/20µs Waveform 100 10 0.1 1 10 100 td - Pulse Duration - µs 1,000 10,000 120 IPP - Peak Pulse Current - % of IPP figure 2 pulse wave form tf Peak Value IPP TEST WAVEFORM PARAMETERS tf = 8µs td = 20µs 100 80 % Of Rated Power figure 3 power derating curve Peak Pulse Power 8/20µs 100 80 60 40 20 0 0 5 e-t


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PDF PAM08SD2305C PAM08SD2305C OD-323 AEC-Q101
2012 - Not Available

Abstract:
Text: Pure-Tin Plating (Annealed) · Solder Reflow Temperature: Pure-Tin - Sn, 100 : 260-270°C · Flammability , Pulse Power - Watts 1,000 500W, 8/20µs Waveform 100 10 0.1 1 10 100 td - Pulse , tf Peak Value IPP TEST WAVEFORM PARAMETERS tf = 8µs td = 20µs 100 80 % Of Rated Power figure 3 power derating curve Peak Pulse Power 8/20µs 100 80 60 40 20 0 0 5 e-t 60 40 20 0 Average Power td = t/(IPP/2) 10 15 t - Time - µs 20 25 30 0 25 50 75 100 125 TA -


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PDF PAM10ST2324C PAM10ST2324C sot-23 AEC-Q101 5/50ns
2011 - Not Available

Abstract:
Text: Lead-Free Pure-Tin Plating (Annealed) · Solder Reflow Temperature: Pure-Tin - Sn, 100 : 260-270°C · , Pulse Power - Watts 1,000 500W, 8/20µs Waveform 100 10 0.1 1 10 100 td - Pulse , tf Peak Value IPP TEST WAVEFORM PARAMETERS tf = 8µs td = 20µs 100 80 % Of Rated Power figure 3 power derating curve Peak Pulse Power 8/20µs 100 80 60 40 20 0 0 5 e-t 60 40 20 0 Average Power td = t/(IPP/2) 10 15 t - Time - µs 20 25 30 0 25 50 75 100 125 TA -


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PDF PAM10ST2315C PAM10ST2324C PAM10ST23xxC sot-23 5/50ns
Not Available

Abstract:
Text: , 60 mm length 17-108 17-109 AB–AP 100 84010000 Adapter Parallel Adapter, 100 mm length , for ALUBOS 800/ 100 17-110 DI 800-RFI DI 800-5002 RFI Gasket • Seal, black, 10 piece , 84006000 AB–AP 100 84010000 AB–AP 150 84015000 AB–WL Gasket aluminum 17- 99 , Parallel Adapter, 100 mm length 17-109 Adapter Parallel Adapter, 150 mm length 17-109 17- 99 , DI 1000-1021 DI 1000-6000 AB 1000 WLV AB–WL AB–AP 60 AB–AP 100 AB–AP 150 84002000


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PDF AdapterS/84162000 with1600 HS/84200000 AB-WL/84005000 AB-WL1/84006001 AB-WL2/84007000
2011 - PAM10ST2315C

Abstract:
Text: €¢ Solder Reflow Temperature: Pure-Tin - Sn, 100 : 260-270°C • Flammability Rating UL 94V-0 â , 10,000 1,000 500W, 8/20µs Waveform 100 10 0.1 10 100 td - Pulse Duration - µs Peak Value IPP 80 100 TEST WAVEFORM PARAMETERS tf = 8µs td = 20µs e-t 60 40 10,000 FIGURE 3 POWER DERATING CURVE Peak Pulse Power 8/20µs 80 % Of Rated Power tf 100 , Page 3 Average Power 0 25 50 75 100 125 TA - Ambient Temperature - °C 150


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PDF PAM10ST2315C PAM10ST2315C PAM10ST2324C OT-23 AEC-Q101
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