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AB-2.000MHZ-B2
AB-2.000MHZ-B2 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bisco Industries AB-2.000MHZ-B2 19 - - - - - Buy Now
Abracon Corporation
AB-2.000MHZ-B2 Crystal 2MHz ±20ppm (Tol) ±100ppm (Stability) 18pF FUND 550Ohm 2-Pin HC-49/U Thru-Hole
AB-2.000MHZ-B2 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Sager AB-2.000MHZ-B2 0 - - - - - Buy Now
Abracon Corporation
AB-2.000MHZ-B2-T CRYSTAL, HC49/U, 2.000MHZ, 18PF, 20PPM
AB-2.000MHZ-B2-T ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Sager AB-2.000MHZ-B2-T 0 - - - - - Buy Now

AB-2.000MHZ-B2 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
AB-2.000MHZ-B2 AB-2.000MHZ-B2 ECAD Model Abracon AB Series HC49U Crystals, ABLS Series HC49US SMD Crystals, ABL Series HC49US Crystals, ABM3 Series 5.0 x 3.2 SMD Crystals Original PDF
AB-2.000MHZ-B2 AB-2.000MHZ-B2 ECAD Model Abracon Crystals, Crystals and Oscillators, CRYSTAL 2MHZ 18PF THRU Original PDF
AB-2.000MHZ-B2-T AB-2.000MHZ-B2-T ECAD Model Abracon Crystals, Oscillators, Resonators - Crystals - CRYSTAL 2.0000MHZ 18PF T/H Original PDF

AB-2.000MHZ-B2 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - HC49U/N-22.1184MHZ

Abstract: ABM3
Text: . 2.000000 535-9016-ND 1.09 .93 .86 .78 AB-2.000MHZ-B2 3.579545 535-9019-ND .33 .28 .26 .24 AB-3.579545MHZ- B2 3.686400 535-9020-ND .33 .28 .26 .24 AB-3.6864MHZ- B2 4.915200 535-9023-ND .33 .28 .26 .24 AB-4.9152MHZ- B2 5.000000 535-9025-ND .33 .28 .26 .24 AB-5.000MHZ- B2 Frequency (MHz) 6.000000 535-9026-ND .33 .28 .26 .24 AB-6.000MHZ- B2 3.579545 535-9081-1-ND 7.372800 535-9027-ND .33 .28


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PDF HC49U 100ppm, 50ppm, 20ppm HC49US 535-9016-9112-2-ND ABM3-30 000MHZ-B2-T 535-9051-ND HC49U/N-22.1184MHZ ABM3
9014 SMD

Abstract: ABLS-7.3728MHZ-B2-T 9015 SMD 9013 SMD 535-9042-ND 535-9077-2-ND 535-9108-2-ND 535-9082-1-ND 535-9020-ND 9012 SMD
Text: .36 .36 .36 1.10 1.10 .33 .33 .33 1.00 1.00 .30 .30 .30 AB-1.8432MHZ- B2 AB-2.000MHZ-B2 AB-3.579545MHZ- B2 AB-3.6864MHZ- B2 AB-4.000MHZ- B2 4.915200 5.000000 6.000000 7.372800 , .36 .36 .36 .36 .36 .33 .33 .33 .33 .33 .30 .30 .30 .30 .30 AB-4.9152MHZ- B2 AB-5.000MHZ- B2 AB-6.000MHZ- B2 AB-7.3728MHZ- B2 AB-8.000MHZ- B2 8.192000 9.830400 10.000000 11.059200 , -ND .56 .49 .43 .30 535-9086-2-ND 263.00 ABLS-4.9152MHZ-B2-T AB-8.192MHZ- B2 AB-9.8304MHZ- B2


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PDF HC49U 100ppm, 20ppm 50ppm, HC49US 535-9009-ND 535-9016-ND 535-9019-ND 535-9020-ND 9014 SMD ABLS-7.3728MHZ-B2-T 9015 SMD 9013 SMD 535-9042-ND 535-9077-2-ND 535-9108-2-ND 535-9082-1-ND 535-9020-ND 9012 SMD
2008 - crystal 11.5 Mhz

Abstract: 10000MHz
Text: -100 Minimum 1.8432 Typical Maximum Units MHz Notes HC49/U 1.8432MHz ­ 40.000MHz 20.00MHz ­ 100.00MHz , 1.8432MHz - 1.999MHz 2.000MHz - 2.399MHz 2.400MHz - 2.999MHz 3.000MHz - 3.699MHz 3.700MHz - 4.199MHz , 12.50MHz - 40.00MHz 20.00MHz - 100.00MHz 100.01MHz - 150.00MHz 120.00MHz ­ 200.00MHz Operation Mode ESR


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PDF HC49/U crystal 11.5 Mhz 10000MHz
2008 - iso 9001

Abstract: crystal AB
Text: -100 Minimum 1.8432 Typical Maximum Units MHz Notes HC49/U 1.8432MHz ­ 40.000MHz 20.00MHz ­ 100.00MHz , 1.8432MHz - 1.999MHz 2.000MHz - 2.399MHz 2.400MHz - 2.999MHz 3.000MHz - 3.699MHz 3.700MHz - 4.199MHz , 12.50MHz - 40.00MHz 20.00MHz - 100.00MHz 100.01MHz - 150.00MHz 120.00MHz ­ 200.00MHz Operation Mode ESR


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PDF HC49/U iso 9001 crystal AB
2012 - RF3833

Abstract: Gan transistor rf gan amplifier transistor amplifier wideband RF3833PCBA-410 GaN BJT RF POWER TRANSISTOR 30MHz
Text: RF3833 30MHz to 2000MHz , 25W GaN Wide-Band Power Amplifier Proposed RF3833 30MHz TO 2000MHz , 25W GaN WIDE-BAND POWER AMPLIFIER Package: Air-Cavity Cu Features Advanced GaN HEMT Technology Output Power of 25W Advanced Heat-Sink Technology 30­2000 MHz Instantaneous bandwidth Input , % (30MHz to 2000MHz ) Power Added Efficiency 55% (200MHz to 1800MHz) -40°C to 85°C Operating Temperature , Board: 30MHz to 2000MHz ; 48V operation Fully Assembled Evaluation Board: 200MHz to 1800MHz; 48V


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PDF RF3833 30MHz 2000MHz, RF3833 43dBm 2000MHz) 200MHz Gan transistor rf gan amplifier transistor amplifier wideband RF3833PCBA-410 GaN BJT RF POWER TRANSISTOR 30MHz
2012 - Not Available

Abstract: No abstract text available
Text: RF3833 30MHz to 2000MHz , 25W GaN Wide-Band Power Amplifier RF3833 Proposed 30MHz TO 2000MHz , 25W GaN WIDE-BAND POWER AMPLIFIER Package: Air-Cavity Cu Features  Advanced GaN HEMT Technology  Output Power of 25W  Advanced Heat-Sink Technology  30–2000 MHz , Performance POUT 43dBm  Gain 13dB  Power Added Efficiency 45% (30MHz to 2000MHz )  Power Added , Assembled Evaluation Board: 30MHz to 2000MHz ; 48V operation Fully Assembled Evaluation Board: 200MHz to


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PDF RF3833 30MHz 2000MHz, 43dBm 2000MHz) 200MHz
12PIN

Abstract: CXG1172UR
Text: Ta25 900MHz 0.30 0.50 dB 1500MHz 0.35 0.55 dB 2000MHz , dB 2000MHz 14 8 16 dB TSW 50 1.2 1.5 - s 8 1dB P1dB *1


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PDF CXG1172UR CXG1172URCDMAW-CDMA 900MHz0 12-pin J04522-PS 100pF) CbypassDC100pF UQFN-12P-01 12PIN CXG1172UR
2006 - RF5607

Abstract: RFMD PA LTE
Text: Condition T=25°C, VCC=5.0V, VREG1, VREG2, and VREG3 = 3.1V; Frequency = 1900MHz to 2000MHz unless otherwise , :64 -20.0 1930MHz 1965MHz 2000MHz -25.0 -30.0 -35.0 ACP(dBc) 1930MHz 1965MHz 2000MHz , Pout(dBm) - 40° C Vcc=5VDc Vreg=3.1VDc 0.60 1930MHz 1965MHz 2000MHz 1930MHz 0.50 1965MHz 2000MHz 0.40 Icc (A) -40.0 -45.0 -50.0 0.30 0.20 55 0 -55.0 -60.0 10.0 0.10 10.0 12.0 14.0 , 1965MHz 2000MHz 0.50 1965MHz 2000MHz 0.40 Icc (A) Icc (A) 0.40 0.30 0.30 0.20


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PDF RF56075V, RF5607 16-Pin, 23dBm RF5607 2110MHz 2140MHz 2170MHz RFMD PA LTE
2006 - SD57045

Abstract: PD55003L "class AB Linear" hf SD2942 DB-54008L-830 PD84001 smd code ab PD55015 sd1446 M177
Text: 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications Part number PD84001 , ) LDMOS in ceramic packages HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital


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PDF PowerSO-10RF PD54003 PowerSO-10RF· PD54008 PD55003 PD55008 PD55015 SD57045 PD55003L "class AB Linear" hf SD2942 DB-54008L-830 PD84001 smd code ab PD55015 sd1446 M177
2013 - Not Available

Abstract: No abstract text available
Text: RF3833 25W GaN Wide-Band Power Amplifier 30MHz to 2000MHz The RF3833 is a wideband Power , Technology ■30MHz to 2000MHz Instantaneous Bandwidth ■Input Internally Matched to 50Π, Efficiency 50% (30MHz to 2000MHz ) ■-40°C to 85°C Operating Temperature ■Large Signal , RF3833TR7 7" Reel with 750 pieces RF3833PCBA-410 Evaluation Board: 30MHz to 2000MHz ; 48V operation , 0dBm, 30MHz to 2000MHz Power Gain 11.6 dB PIN = 33dBm, 30MHz to 2000MHz Gain Variation


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PDF RF3833 30MHz 2000MHz RF3833 DS130913
2013 - Not Available

Abstract: No abstract text available
Text: RF3833 25W GaN Wide-Band Power Amplifier 30MHz to 2000MHz The RF3833 is a wideband Power , Technology ■30MHz to 2000MHz Instantaneous Bandwidth ■Input Internally Matched to 50Π, Efficiency 50% (30MHz to 2000MHz ) ■-40°C to 85°C Operating Temperature ■Large Signal , RF3833TR7 7" Reel with 750 pieces RF3833PCBA-410 Evaluation Board: 30MHz to 2000MHz ; 48V operation , 0dBm, 30MHz to 2000MHz Power Gain 11.6 dB PIN = 33dBm, 30MHz to 2000MHz Gain Variation


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PDF RF3833 30MHz 2000MHz RF3833 DS131008
2006 - EPIRB

Abstract: SD2942 SD3933 class AB hf bipolar SONAR car alarm PD55015 SD57045 PD55035 sd2931 fm "class AB Linear" hf
Text: 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications Part number PD84001 , ) LDMOS in ceramic packages HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital


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PDF PowerSO-10RF PD54003 PowerSO-10RF· PD54008 PD55003 PD55008 PD55015 EPIRB SD2942 SD3933 class AB hf bipolar SONAR car alarm PD55015 SD57045 PD55035 sd2931 fm "class AB Linear" hf
2013 - Not Available

Abstract: No abstract text available
Text: PRELIMINARY RF3833 25W GaN Wide-Band Power Amplifier 30MHz to 2000MHz The RF3833 is a , – Advanced Heat-Sink Technology ■30MHz to 2000MHz Instantaneous Bandwidth ■Input , 11.5dB Power Added Efficiency 50% (30MHz to 2000MHz ) ■-40°C to 85°C Operating Temperature , : 30MHz to 2000MHz ; 48V operation RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 , 2000MHz Power Gain 11.6 dB PIN = 33dBm, 30MHz to 2000MHz Gain Variation with Temperature


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PDF RF3833 30MHz 2000MHz RF3833 DS140121
Not Available

Abstract: No abstract text available
Text: B1 E2 B2 Q 1 n ^ Q2 Cl E l C2 961001EAA1 · TOSHIBA is continually w o rking to , = 2000MHz NF (1) V ce = 8V, Iq = 5mA, f=1000MHz - dB 1.1 - NF (2) VCE = 8V, Ic -5mA, f= 2000MHz - 1.7 3 , -7mA, f= 2000MHz 1.4 dB VCE = 5V, Ic = 3mA, f = 1000MHz VCE = 5V, Ic = 3mA, f= 2000MHz 1.7 3 dB - -


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PDF HN9C16FT 2SC5091 2SC5261 1000MHz 2000MHz
Not Available

Abstract: No abstract text available
Text: B2 Q2 Cl E l C2 961001EAA1 · TOSHIBA is continually working to improve the quality and , =1000MHz VCE = 8V, Iq = 20mA, 4.5 |S2lel2(2) f= 2000MHz NF (1) VCE = 8V, Ic = 5mA, f=1000MHz - NF (2) V c e = 8V, Ic = 5mA, f= 2000MHz - SYMBOL !CBO lEBO hpE fT |S2lel2(D |S2lel2(2) NF (1) NF (2) vEB=iv, ic , 1000MHz - 14 - dB VCE = 5V, Ic = 7mA, f= 2000MHz 8 - dB 5 VCE = 5V, Ic = 3mA, f=1000MHz - 1.4 - dB V c e = 5V, Ic = 3mA, f= 2000MHz - 1.7 3 dB 1998 08-20 2/2 -


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PDF HN9C16FT 2SC5091 2SC5261 1000MHz 2000MHz
2SC5091

Abstract: 2SC5256 HN9C15FT
Text: 0.008g MARKING 6 5 4 1=1 1=1 1=1 ZL H H H 12 3 Type Name PIN ASSIGNMENT (TOP VIEW) B1 E2 B2 , €” 20mA, f= 2000MHz 4.5 7 — dB Noise Figure NF (1) VCE = 8V, Ic = 5mA, f=1000MHz — 1.1 — dB NF (2) VCE = 8V, 1(2 = 5mA, f= 2000MHz — 1.7 3 dB ELECTRICAL CHARACTERISTICS Q2 (Ta = 25 , |S2lel2(D VCE = 5V, Ic — 20mA, f= 1000MHz — 14 — dB |S2lel2 (2) VCE = 5V, 1(2 = 20mA, f= 2000MHz 5 , 5mA, f= 2000MHz — 1.5 3 dB 2 2001-12-10 TOSHIBA HN9C15FT RESTRICTIONS ON PRODUCT USE _000707E


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PDF HN9C15FT 2SC5091 2SC5256 2SC5256 HN9C15FT
2SC5091

Abstract: 2SC5256 HN9C04FT IS21E12
Text: MARKING mi mi mi 12 3 Type Name PIN ASSIGNMENT (TOP VIEW) B1 E2 B2 1=1 1=1 1=1 Cl El C2 1 , = 1000MHz — 14 — dB |S2lel2 (2) VCE = 5V, Ic — 20mA, f= 2000MHz 5 8 — dB Noise Figure NF (1) VCE = 5V, Ic = 5mA, f=1000MHz — 1.1 — dB NF (2) VqE = 5V, Iq = 5mA, f= 2000MHz — 1.5 3 dB , — dB |S2lel2 (2) VCE = 8V, Ic — 20mA, f= 2000MHz 4.5 7 — dB Noise Figure NF (1) VqE = 8V, Iq = 5mA, f=1000MHz — 1.1 — dB NF (2) vce = 8v, Iq = 5mA, f= 2000MHz — 1.7 3 dB 2


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PDF HN9C04FT N9C04FT 2SC5256 2SC5091 2SC5091 HN9C04FT IS21E12
Not Available

Abstract: No abstract text available
Text: -. MARKING PIN ASSIGNMENT (TOP V IEW ) 6 5 Z E Type Name B1 E 2 B2 Qi A > |Q 2 C , q = 20mA VCE = 8V> I q = 20mA, f=1000M H z VCE = 8V, I q = 20mA, f = 2000MHz VCE = 8V, I c = 5mA, f=1000M Hz V c e = 8V, I c = 5mA, f = 2000MHz MIN. TYP. MAX. UNIT - - 50 7 - 4 - - - - - 10 14 6.5 , 7mA, f=1000M Hz VCE = 6V> I c = 7mA> f = 2000MHz VCE = 6V, I q = 3mA, f=1000M Hz VCE -6V, I c - 3mA, f = 2000MHz MIN. TYP. MAX. UNIT - - 50 7 - 4.5 - - - - - 10 14 7 1.1 1.7 1 1 160 - - -


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PDF HN9C08FT 2SC5091 1000M 2000MHz 2000MHz
2001 - RF POWER TRANSISTOR 100MHz

Abstract: RF2306
Text: communication products operating in frequency bands up to 2000MHz . The device is self-contained with 50 input , Si CMOS Package Style: SOP-8 GaAs MESFET SiGe HBT .008 Features · DC to 2000MHz , Rev B2 000228 General Purpose Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc , 42 V mA At pin 8 VCC =4.3V, RC =22 mA Rev B2 000228 RF2306 Pin 1 Function RF , 2 3 6 4 Rev B2 000228 7 5 4-65 GENERAL PURPOSE AMPLIFIERS 4 RF2306


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PDF RF2306 RF2306 2000MHz. RF POWER TRANSISTOR 100MHz
2SC5091

Abstract: 2SC5261 HN9C16FT
Text: MARKING 6 5 4 1=1 1=1 1=1 ZM H H H 12 3 Type Name PIN ASSIGNMENT (TOP VIEW) B1 E2 B2 ■=■Q1 , VCE = 8V, Ic — 20mA, f= 1000MHz — 13.5 — dB |S2lel2 (2) VCE = 8V, Ic — 20mA, f= 2000MHz 4.5 , 5mA, f= 2000MHz — 1.7 3 dB ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C) CHARACTERISTIC SYMBOL , , 1(2 = 7mA, f=1000MHz — 14 — dB |S2lel2 (2) VCE = 5V, 1(2 = 7mA, f= 2000MHz 5 8 — dB Noise Figure NF (1) V(2E = 5V, Ic = 3mA, f= 1000MHz — 1.4 — dB NF (2) VCE = 5V, Ic = 3mA, f= 2000MHz â


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PDF HN9C16FT 2SC5091 2SC5261 2SC5261 HN9C16FT
2SC5091

Abstract: 2SC5256 HN9C15FT
Text: MARKING 6 5 4 1=1 1=1 1=1 ZL H H H 12 3 Type Name PIN ASSIGNMENT (TOP VIEW) B1 E2 B2 ■=■Q1 , VCE = 8V, Ic — 20mA, f= 1000MHz — 13.5 — dB |S2lel2 (2) VCE = 8V, Ic — 20mA, f= 2000MHz 4.5 , 5mA, f= 2000MHz — 1.7 3 dB ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C) CHARACTERISTIC SYMBOL , , Ic — 20mA, f= 1000MHz — 14 — dB |S2lel2 (2) VCE = 5V, 1(2 = 20mA, f= 2000MHz 5 8 — dB , = 2000MHz — 1.5 3 dB 2 2001-05-31 TOSHIBA HN9C15FT RESTRICTIONS ON PRODUCT USE _000707E • TOSHIBA


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PDF HN9C15FT 2SC5091 2SC5256 2SC5256 HN9C15FT
transistor y1 toshiba

Abstract: 2SC5091 2SC5261 HN9C05FT
Text: MARKING mi mi mi 12 3 Type Name PIN ASSIGNMENT (TOP VIEW) B1 E2 B2 1=1 1=1 1=1 Cl El C2 1 , =1000MHz — 14 — dB |S2lel2 (2) VCE = 5V, Iq = 7mA, f= 2000MHz 5 8 — dB Noise Figure NF (1) VCE = 5V, IC = 3mA, f= 1000MHz — 1.4 — dB NF (2) VCE = 5V, Iq = 3mA, f= 2000MHz — 1.7 3 dB ELECTRICAL , (2) VCE = 8V, Ic — 20mA, f= 2000MHz 4.5 7 — dB Noise Figure NF (1) VCE = 8V, 1(2 = 5mA, f = 1000MHz — 1.1 — dB NF (2) VCE = 8V, 1(2 = 5mA, f= 2000MHz — 1.7 3 dB 2 2001-05-31 TOSHIBA


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PDF HN9C05FT N9C05FT 2SC5261 2SC5091 transistor y1 toshiba 2SC5091 HN9C05FT
L10100

Abstract: No abstract text available
Text: bd bd bd 12 3 PIN ASSIGNMENT (TOP VIEW) B1 E2 B2 F=» F=1 F=l Q1 Q2 bd bd bd Cl El C2 961001EAA1 â , €” 14 — dB |S2lel2(2) VCE = SV, IC = 20mA, f= 2000MHz 4 6.5 — dB Noise Figure NF (1) Vce = 8V, Ic = 5mA, f=1000MHz — 1.1 — dB NF (2) Vce = 8V, Ic = 5mA, f= 2000MHz — 1.7 3 dB ELECTRICAL , = 2000MHz 4.5 7 — dB Noise Figure NF (1) Vce = 6V, Ic = 3mA, f=1000MHz — 1.1 — dB NF (2) VCE — 6V, le = 3mA, f= 2000MHz — 1.7 3 dB 1998-08-20 2/3 Powered by ICminer.com Electronic-Library Service


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PDF HN9C08FT 2SC5091 IS21e12 L10100
Not Available

Abstract: No abstract text available
Text: Type Name Z B bd bd bd 12 3 PIN ASSIGNMENT (TOP VIEW) B1 E2 B2 F=» F=1 F=l Q1 Q2 bd bd bd Cl El C2 , =1000MHz — 14 — dB |S2lel2(2) Vce = 5V, Ic = 7mA, f= 2000MHz 5 8 — dB Noise Figure NF (1) Vce = 5V, le = 3mA, f = 1000MHz — 1.4 — dB NF (2) VCE = 5V, IC = 3mA, f= 2000MHz — 1.7 3 dB ELECTRICAL , = 20mA, f= 2000MHz 4.5 7 — dB Noise Figure NF (1) VcE = 8V, Ic = 5mA, f=1000MHz — 1.1 — dB NF (2) VcE = 8V, Ic = 5mA, f= 2000MHz — 1.7 3 dB 1998-08-20 2/3 Powered by ICminer.com


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PDF HN9C05FT 2sc5261 2sc5091 IS21e12
Not Available

Abstract: No abstract text available
Text: B1 E2 B2 ZL / Q 1 n ^ Q2 Cl E l C2 961001EAA1 · TOSHIBA is continually w o rking , -20mA, 4.5 7 - dB |S 2 lel 2 ( 2 ) f= 2000MHz NF (1) V ce = 8V, Iq = 5mA, f=1000MHz - 1.1 - dB NF (2) VCE = 8V, Ic -5mA, f= 2000MHz - 1.7 3 dB e ELECTRICAL CHARACTERISTICS Q2 (Ta = 25 , = 2000MHz dB NF (1) VCE = 5V, Ic = 5mA, f=1000MHz 1.1 NF (2) V CE = 5V, I c -5mA, f = 2000MHz 3 dB 1.5 -


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PDF HN9C15FT 2SC5091 2SC5256 2000MHz 1000MHz --20mA,
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