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1999 - HSA11

Abstract: XXXH ce19a SA15 SA14 SA13 SA12 SA11 SA10 MBM29LV080A
Text: - - MBM29LV080A CE - OE ACC t - CE t CE - - OE t OE t ACC-t OE - , RESET CMOS CE CE - - - RESET V CC ± 0.3 V 5 A - CE "H" CC2 I CE t - - - - - - - - RESET CMOS RESET V SS ± 0.3 V CE "H""L" - - - 5 A RESET t RH 3 , RESET - - RESET t RH 2 2 B0H 30H 1 2 1 2 CPU , -90 t RC 70 90 ns t ACC - - CEV IL - - OEV IL 70


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PDF MBM29LV080A MBM29LV080A MBM29LV080A-70 MBM29LV080A-90 HSA11 XXXH ce19a SA15 SA14 SA13 SA12 SA11 SA10
V088-70

Abstract: AC39VF088 ACTRANS SYSTEM INC Actrans System
Text: Read mode within T . The contents of DQ15-DQ8 can RC be VIL or VIH , but n other value, during any , change without notice. AC39VF088 Page 11 AC39VF088 T RC T AA A19~A0 T CE CE# T OE OE# TOHZ T OLZ V IH WE# TCHZ T OH T CLZ HIGH-Z HIGH-Z Data Valid DQ7 , A19~A0 555 AAA ADDR T AH TW TDH P WE# T WPH TDS TAS OE# TCH CE# TCS , , b u t n o o t h e r v a l u e . Figure 2. WE# Controlled Program Cycle Timing Diagr am This


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PDF AC39VF088 64Kbyte V088-70 AC39VF088 ACTRANS SYSTEM INC Actrans System
1999 - SA13

Abstract: SA14 SA15 DS05 MBM29LV080A SA10 SA11 SA12
Text: - - MBM29LV080A CE - OE ACC t - - CE t CE - - OE t OE t ACC-t OE , RESET RESET CMOS CE CE - - - RESET V CC ± 0.3 V 5 A - CE "H" CC2 I CE t - - - - - - - - RESET CMOS RESET V SS ± 0.3 V CE "H""L" - - - 5 A RESET t RH , - - - - RESET V IL RESET t RH 2 2 B0H 30H 1 2 1 , -70 MBM29LV080A-90 MBM29LV080A-12 t RC - - CE 70 90


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PDF MBM29LV080A-70/90/12 MBM29LV080A MBM29LV080A-70 MBM29LV080A-12 MBM29LV080A-90 F40008S-1C-1 SA13 SA14 SA15 DS05 MBM29LV080A SA10 SA11 SA12
8051 timing diagram

Abstract: 555H EM39LV088 china DVD player power circuit diagram
Text: T RC T AA A19~A0 T CE CE# T OE OE# V IH T OHZ T OLZ W E# DQ7-0 HIGH-Z T CHZ T OH T CLZ Data Valid Data Valid HIGH-Z Figure 1: Read Cycle Timing , Diagram Internal Program Operation Starts T BP AAA A19~A0 555 AAA ADDR T AH T DH TW P W E# T W PH T DS T AS OE# T CH CE# T CS DQ7-0 AA 55 A0 SW 0 S1 , CE# Controlled Program Cycle Timing Diagram Internal Program Operation Starts T BP AAA A19~A0


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PDF EM39LV088 EM39LV088 23/Bldg. 8051 timing diagram 555H china DVD player power circuit diagram
Not Available

Abstract: No abstract text available
Text: Ae 40 D 14 57 N C 58 R E S E T 59 N C C E , 24 A5 41 □ is , pins D0- D 7. For these Flash-5 cards A g -A 17 specify the sector address, and A t - A 7 specify , data using an internal control timer. See Figures 4 and 5 for programming algorithms. T ow rite in , at V cc = 5.0V, T = 25°C. 2. One device active 16 of 31 Rev A PCMCIA Flash-5 Memory Card , min. NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at V qc = 5.0V, T =


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PDF 8U9-733-B1H6
DS05

Abstract: MBM29LV080A SA10 SA11 SA12 SA13 SA14 SA15 SA12-11
Text: Da ta Shee t (Retire d Pro duct) 2 MBM29LV080A_DS05-20870-5 September 10, 2007 , CE - OE ACC t - CE t CE - - OE t OE t ACC-t OE - CE "H""L" 2 - , - - - RESET V CC ± 0.3 V 5 A - CE "H" CC2 I CE t - - - - - - - - RESET CMOS RESET V SS ± 0.3 V CE "H""L" - - - 5 A RESET t RH 3 MBM29LV080A 12 , - - RESET V IL - - - - V IL RESET - - RESET t RH 2 2 B0H 30H


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PDF MBM29LV080A-70/90 MBM29SL160TD/160BD MBM29LV080A DS05-20870-5 MBM29LV080A DS05-20870-5 DS05 SA10 SA11 SA12 SA13 SA14 SA15 SA12-11
IM29F001T

Abstract: A16-2 IM29F001 Integrated Memory Technologies IM29F001-90
Text: ns ns ns µs ms s ns ns IMT Preliminary Specification tRC ADDRESS t CE CE tOE OE VIH t CLZ tOLZ WE DQ t OHZ t HIGH Z t CHZ OH DATA VALID DATA VALID t AA Fig. 1 Read Cycle Timing Diagram t AS t AH ADDRESS t CS CE t CH t OES t OEH OE t WP t WPH WE t DS DQ HIGH Z DATA VALID t DH Fig. 2 WE , , Santa Clara, CA 95050. Tel. (408) 986-1088 Fax (408) 727-8696 IMT Preliminary Specification t


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PDF IM29F001T IM29F001B IM29F001T) IM29F001B) 5555H/AAH 2AAAH/55H 5555H/A0H A16-2 IM29F001 Integrated Memory Technologies IM29F001-90
IM29F004-70

Abstract: IM29F004T IM29F004B
Text: ns ns ns ns µs ms s ns ns IMT Preliminary Specification tRC ADDRESS t CE CE tOE OE VIH WE t CLZ tOLZ DQ t OHZ t t CHZ OH HIGH Z DATA VALID DATA VALID t AA Fig. 1 Read Cycle Timing Diagram t AS t AH ADDRESS t CS CE t CH t OES t OEH OE tWP t WPH WE t DS DQ HIGH Z DATA VALID t DH Fig. 2 WE , , Santa Clara, CA 95050. Tel. (408) 986-1088 Fax (408) 727-8696 IMT Preliminary Specification t


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PDF IM29F004T IM29F004B IM29F004T) IM29F004B) 5555H/AAH 2AAAH/55H 5555H/A0H IM29F004-70 IM29F004B
2013 - IS39LV010

Abstract: A114 ESD IS39LV040
Text: GENERATOR HIGH V O L T A G E SWITCH I/O0-I/O7 I/ O BUF F ER S WE# CE# OE# COMMAND REGISTER C E , / IS39LV040 AC CHARACTERISTICS (CONTINUED) READ OPERATIONS AC WAVEFORMS t RC ADDRESS VALID ADDRESS t ACC CE# OE# WE# HIGH Z t CE t OE t DF tO H OUTPUT VALID OUTPUT t VCS VCC OUTPUT , ( f = 1 MHz, T = 25°C ) Typ CIN COUT 4 8 Max 6 12 Units pF pF Conditions VIN = 0 V VOUT = 0 V Note , CE# tW P H t BP t AS A0 - A M S tA H 555 2AA 555 ADDRESS tW C DATA IN AA tD S


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PDF IS39LV512: IS39LV010: IS39LV040: IS39LV512) 208mil 150mil 11x13mm) com22 IS39LV512 IS39LV010 A114 ESD IS39LV040
30A18

Abstract: No abstract text available
Text: D EN SE-PA C M I C K OS V S T \í M S PRELIM INARY D E SC R IP T IO N : The D P5Z1MM8NKY/Í3/H3/J3 , U T D IA G R A M 48 - PIN 48 - PIN 48- PIN 48 - PIN A19 N.C. PWD RY /B Y A17 A16 A14 A12 A7 A6 A5 , writes to the Command Interface Register (CIR). W E is active low. O U T P U T ENABLE: Gates the device , microprocessor bus cycles. T a b le 1 : Bus O p e ra tio n M ode Read 1 Output D isab le1 Standby1 Deep , rising edge of WE. SRD - Data read from Status Register. T a b e 3: Type Manufacturer's Code Device


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PDF 50-pin 150ns 200ns 30A159-01 30A18
TC58FVM6B5BTG65

Abstract: tc58fvm6t5 TC58FVM6T5BTG TC58FVM6B5BTG TC58FVM6T5BTG65 BA102 diode ba102 TC58 TC58FVM6B5B
Text: TC58FVM6( T /B)5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free , *BXG P-TFBGA56-0710-0.80AZ (weight: TBD) 2005-1-11 1/79 TC58FVM6( T /B)5B(TG/XG)65 TABLE OF , . 76 2005-1-11 2/79 TC58FVM6( T /B)5B(TG/XG)65 3. ORDERING INFORMATION TC58 F V M6 T 5 B XG 65 Speed version 65 = 65ns Package TG = TSOP XG = BGA Design rule B = , architecture T = Top boot block B = Bottom boot block Capacity M6 = 64Mbits Supply Voltage V = 3 V system


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PDF TC58FVM6 TC58FVM6T5/B5B 67108864-bit, TC58FVM6B5BTG65 tc58fvm6t5 TC58FVM6T5BTG TC58FVM6B5BTG TC58FVM6T5BTG65 BA102 diode ba102 TC58 TC58FVM6B5B
AC39LV040

Abstract: CD 4060 PIN DIAGRAM 0040H EM39LV040
Text: 0040H 0001H CE# OE# T IDA T WP W E# T AA T W PH DQ7-0 AA SW 0 55 SW 1 90 , Exit and Reset Address A14-0 DQ7-0 2AAA 5555 5555 55 AA F0 T IDA CE# OE# TW P W E# SW 0 T W PH SW 1 SW 2 Figure 9: Software ID Exit and Reset AC Input/Output Testing , for end of Program ( T BP , Data# Polling bit, or Toggle bit operation) Program Com pleted Figure , Progrm /Erase Initiated W ait T BP , T SCE , T SE or T BE Read Byte Read DQ7 Progrm /Erase


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PDF EM39LV040 512Kx8) EM39LV040 23/Bldg. AC39LV040 CD 4060 PIN DIAGRAM 0040H
2005 - TC58FVM6B5BTG65

Abstract: TC58FVM6B5B TC58FVM6T5BTG65 TC58FVM6B5BXG TC58FVM6T5BTG tc58fvm6t5b tc58fvm6t5 BA102 TC58 diode ba102
Text: TC58FVM6( T /B)5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 64M (4M × 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM6( T /B)5B is a 67108864-bit, 3V , ( T /B)5B features commands for Read, Program and Erase operations to allow easy interfacing with , executed in the chip. The TC58FVM6( T /B)5B also features a Simultaneous Read/Write operation so that data , Read operation) Package (Lead-Free) TC58FVM6( T /B)5BTG TSOP 48-P-1220-0.50A (weight: 0.51g


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PDF TC58FVM6 67108864-bit, TC58FVM6B5BTG65 TC58FVM6B5B TC58FVM6T5BTG65 TC58FVM6B5BXG TC58FVM6T5BTG tc58fvm6t5b tc58fvm6t5 BA102 TC58 diode ba102
IM29LV001B

Abstract: IM29LV001T 001B A16-2
Text: tRC ADDRESS t CE CE tOE OE VIH t CLZ tOLZ WE DQ t OHZ t HIGH Z t CHZ OH DATA VALID DATA VALID t AA Fig. 1 Read Cycle Timing Diagram t AS t AH ADDRESS t CS CE t CH t OES t OEH OE t WP t WPH WE t DS DQ HIGH Z DATA VALID t DH Fig. 2 WE Controlled Command Write Timing Diagram This advanced data sheet contains , IMT Preliminary Specification t AH t AS ADDRESS t CP CE t CPH t OES t OEH


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PDF IM29LV001T IM29LV001B IM29LV001T) IM29LV001B) 5555H/AAH 2AAAH/55H 5555H/A0H IM29LV001B 001B A16-2
2006 - TC58FVM6B5BTG65

Abstract: TC58FVM6B5BTG TC58FVM6B5B TC58FVM6T5BTG65 tc58fvm6t5 tc58fvm6t5b TC58FVM6T5BXG65 TC58 BA102 diode ba102
Text: TC58FVM6( T /B)5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 64M (4M × 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM6( T /B)5B is a 67108864-bit, 3V , ( T /B)5B features commands for Read, Program and Erase operations to allow easy interfacing with , executed in the chip. The TC58FVM6( T /B)5B also features a Simultaneous Read/Write operation so that data , Increment Read operation) Package TC58FVM6( T /B)5BTG TSOP 48-P-1220-0.50 (weight: 0.51g) TC58FVM6( T /B


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PDF TC58FVM6 67108864-bit, TC58FVM6B5BTG65 TC58FVM6B5BTG TC58FVM6B5B TC58FVM6T5BTG65 tc58fvm6t5 tc58fvm6t5b TC58FVM6T5BXG65 TC58 BA102 diode ba102
1230A1

Abstract: No abstract text available
Text: D E N S E - P A C M I C K OS V S T M S \í 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3 , G E1 Symbol V dd A BSO LUTE M A X IM U M RATINGS 5 Unit V V V Symbol T stc T bias T op Io UT , Symbol C adr C cf CwE DC O U T P U T CHARACTERISTICS Symbol VoH Parameter HIGH Voltage LO W Voltage , il or Vih, f = 10MHz, Io u t = 0mA 50 ICC2 V Do V Read Current6 V dd = V dd max., CE = Vil, Inputs = Vil or Vih, f = 5MHz, I o u t = OmA 30 45 20 1 CC3 d d


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PDF DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 DP5Z1MM16PY/ 3/H3/J3/DP5Z1MW16PA3 50-pin 16-Megabits DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 120ns 150ns 200ns 30A162-21 1230A1
1998 - MBM29F040C

Abstract: MBM29F040C-70PFTN DS05 555H MBM29F040C-70PD
Text: ACC t - - CE t CE - - OE t OE t ACC-t OE 2 - - MBM29F040C CMOSCE V CC ± 0.3 V - - 5 A TTLCE VIH - - 1 mA CE "H" CC2 I CE t 3 - - OE IH V 4 , t RC 55 70 90 ns t ACC - - CE V IL - - OE V IL 55 70 90 ns - - CE t CE - V IL - OE 55 70 90 ns - OE t OE 30 30 35


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PDF MBM29F040C MBM29F040C MBM29F040C-55 MBM29F040C-70 MBM29F040C-90 C32021S-2C-4 MBM29F040C-70PFTN DS05 555H MBM29F040C-70PD
2013 - Not Available

Abstract: No abstract text available
Text: VOLTAGE GENERATOR I/O0-I/O7 I/ O BUF F ER S HIGH V O L T A G E SWITCH WE# COMMAND REGISTER , Manufacturer ID and Device ID of devices can be read at address X0000h and X0001h where X = Don’ t Care. 3 , CHARACTERISTICS (CONTINUED) READ OPERATIONS AC WAVEFORMS t RC ADDRESS VALID ADDRESS t ACC CE# t CE t OE OE# t DF WE# tO H HIGH Z OUTPUT OUTPUT VALID t VCS VCC INPUT TEST , CAPACITANCE ( f = 1 MHz, T = 25°C ) Typ Max Units Conditions CIN 4 6 pF VIN = 0 V


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PDF IS39LV512 IS39LV010 IS39LV040 IS39LV512: IS39LV010: IS39LV040: IS39LV512)
Not Available

Abstract: No abstract text available
Text: devices can be read at address X0000h and X0001h where X = Don’ t Care. 3. The device returns to , (CONTINUED) READ OPERATIONS AC WAVEFORMS t RC ADDRESS VALID ADDRESS t ACC t CE CE# t OE OE# t DF WE# tO H HIGH Z OUTPUT OUTPUT VALID t VCS VCC OUTPUT TEST LOAD , Measurement Level 0.0 V 1.3 K C L = 30 pF PIN CAPACITANCE ( f = 1 MHz, T = 25°C ) Typ Max , CHARACTERISTICS (CONTINUED) DATA# POLLING AC WAVEFORMS WE# t CH t CE CE# t OEH OE# t DF t


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PDF Pm39LV512 Pm39LV010 Pm39LV020 Pm39LV040 Pm39LV512: Pm39LV010: Pm39LV020: Pm39LV040:
2013 - Not Available

Abstract: No abstract text available
Text: / IS39LV040 BLOCK DIAGRAM ERASE/PROGRAM VOLTAGE GENERATOR I/O0-I/O7 I/ O BUF F ER S HIGH V O L T , at address X0000h and X0001h where X = Don’ t Care. 3. The device returns to standby operation , OPERATIONS AC WAVEFORMS t RC ADDRESS VALID ADDRESS t ACC CE# t CE t OE OE# t DF WE# tO H HIGH Z OUTPUT OUTPUT VALID t VCS VCC INPUT TEST WAVEFORMS AND MEASUREMENT , Measurement Level 30 pF (for 55 ns) 100 pF (for 70 ns) 1.3 K PIN CAPACITANCE ( f = 1 MHz, T = 25Â


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PDF IS39LV512 IS39LV010 IS39LV040 IS39LV512: IS39LV010: IS39LV040: IS39LV512)
2006 - 39LV010

Abstract: 39lv512 PM39LV010-70VCE 39LV020 pm39lv512-70vce PM39LV512-70JCE PM39LV040-70JCE PM39LV040-70VC S5580 PM39LV010-70JCE
Text: OPERATIONS AC WAVEFORMS t RC ADDRESS ADDRESS VALID t ACC CE# t CE t OE t DF OE# WE# tO H OUTPUT HIGH Z OUTPUT VALID t VCS VCC OUTPUT TEST LOAD 3.3 V INPUT TEST WAVEFORMS AND , pF PIN CAPACITANCE ( f = 1 MHz, T = 25°C ) Typ CIN COUT 4 8 Max 6 12 Units pF pF , WE# CE# t CH t OEH t CE OE# t OE tO H I/O7 I/O7# VALID DATA t DF Note: Toggling CE


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PDF Pm39LV512 Pm39LV010 Pm39LV020 Pm39LV040 Pm39LV512: Pm39LV010: Pm39LV020: Pm39LV040: Pm39LV512) 39LV010 39lv512 PM39LV010-70VCE 39LV020 pm39lv512-70vce PM39LV512-70JCE PM39LV040-70JCE PM39LV040-70VC S5580 PM39LV010-70JCE
Integrated Memory Technologies

Abstract: IM29F002 IM29F002B IM29F002T
Text: ns ns ns µs ms s ns ns IMT Preliminary Specification tRC ADDRESS t CE CE tOE OE VIH WE t CLZ tOLZ DQ t OHZ t t CHZ OH HIGH Z DATA VALI D DATA VALI D t AA Fig. 1 Read Cycle Timing Diagram t AS t AH ADDRESS t CS CE t CH t OES t OEH OE tWP t WPH WE t DS DQ HIGH Z DATA VALI D t DH Fig. 2 WE , , Santa Clara, CA 95050. Tel. (408) 986-1088 Fax (408) 727-8696 IMT Preliminary Specification t


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PDF IM29F002T IM29F002B 5555H/AAH 2AAAH/55H 5555H/A0H Integrated Memory Technologies IM29F002 IM29F002B
2006 - Not Available

Abstract: No abstract text available
Text: devices can be read at address X0000h and X0001h where X = Don’ t Care. 3. The device returns to , (CONTINUED) READ OPERATIONS AC WAVEFORMS t RC ADDRESS VALID ADDRESS t ACC t CE CE# t OE OE# t DF WE# tO H HIGH Z OUTPUT OUTPUT VALID t VCS VCC OUTPUT TEST LOAD , Measurement Level 0.0 V 1.3 K C L = 30 pF PIN CAPACITANCE ( f = 1 MHz, T = 25°C ) Typ Max , CHARACTERISTICS (CONTINUED) DATA# POLLING AC WAVEFORMS WE# t CH t CE CE# t OEH OE# t DF t


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PDF Pm39LV512 Pm39LV010 Pm39LV020 Pm39LV040 Pm39LV512: Pm39LV010: Pm39LV020: Pm39LV040:
Q20G

Abstract: 00F1H MX-2S
Text: /iM x ie )C M P 8 EEPO O M S IN G L E V O L T A G E F L A S H · · · · · Page program , standby current · CMOS and TTL compatible inputs and outputs · T w o independently Protected sectors · Deep , VCC GND 59-2 MX29F16-10 BLOCK DIAGRAM _ \U;_ | WE cëîaS ^ I i Ì C 0 N T R 0 Li , VIL, Q 0 · 0 7 =D0-D7 o u t . Q15/A-1 = VIH, QO - 0 7 = D8 -D15 out. 59-5 M X 29F *1610 WRITE , -03FFFFH 040000H-05FFFFH 060000H-07FFFFH 080000H-09FFFFH ERASE RESUME SA15 1 t 1 1 1EOOOOH-1FFFFFH This command


OCR Scan
PDF 100/120/150ns -100mA 100mA 100ns Q20G 00F1H MX-2S
Not Available

Abstract: No abstract text available
Text: DENSE-PAC MI C R C HY STEMS PRELIMINARY D E S C R IP T IO N : The D P 5Z 2 M X 16N n3 "S LC C " , Dense-Pac M icrosystem s, Inc. FUNCTIO NAL BLOCK DIAG RAM P IN -O U T DIAG RAM (TOF1 VIEW) A B c D E 1 , U T /O U T P U T : Inp ut data and com m and d u rin g Com m and Data Interface Register (CIR) w rite , Interface Register (CIR). WE is active low . O U TP U T ENABLE: Cates the device's data through the o u tp u t buffers d u rin g a read cycle. OE is active low . DEVICE POWER SUPPLY ( + 5.0 Volts ±10% ) GROUND


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PDF 50-pin 120ns 150ns 200ns
Supplyframe Tracking Pixel