The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

A773* Transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
A773* Transistor

Abstract: No abstract text available
Text: * 300°C ‘ Distance of 1 ,6mm from case for 10 seconds ■Ö7732TS 00G471M T iö â , transistor M2 off. The data input for the D flip flop, D, is internally connected to a logic high. As V0U , minus the threshold voltage of transistor M1. The zener voltage is typically 23V and the threshold , , Q, to switch from a logic low to a logic high. Transistor M2 will the be turned on pulling the gate of transistor M1 to ground thereby turning transistor M1 off. Tran­ sistor M1 will remain off as


OCR Scan
PDF LR745 O-243AA LR745N3 LR745N8 LR745ND OT-89. AN-H28. rectif844 0Q0M71fl A773* Transistor
1996 - a1273* transistor

Abstract: A773* Transistor
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE , CONNECTIONS °C Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor , including static electricity. Document No , €“56.3 –65.1 –67.8 –73.1 –74.5 –77.3 –79.7 –99.2 –123.7 MAG 7.920 6.345 5.311


Original
PDF
1997 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It , transistor has been applied ultra super mini mold package. Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = , €“70.1 –73.1 –77.3 –81.0 –85.4 –89.8 –94.2 –99.7 –104.4 –110.4 –115.7 â


Original
PDF
1997 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra , €“56.9 –58.9 –60.8 –63.0 –65.5 –68.4 –71.1 –74.1 –77.3 –80.7 –84.3 –88.4 â


Original
PDF
A773* Transistor

Abstract: No abstract text available
Text: , derate linearly to 70°C at 12mW/°C. ■I Ö773ERS □ □ G 4 4 ß cl 0 4 0 ■In the , . Either by N*CH transistor or P-CH output diode. 2. Either by P-CH transistor or N-CH output diode. 3 , matched the latch value, that particular charging transistor would be cut off, leaving that CH at some , X ß7732c 15 DGCmMTM HDfl ■Pre-defined by 1 or 2 X Load Count Count Clock


OCR Scan
PDF 32-Channel 64-Lead 80-Lead 80-Lead MIL-STD-883 HV3806PG HV3806DG HV3806X RBHV3806DG A773* Transistor
tachometer vdo

Abstract: Tachometer circuit schematic diagram dwell meter ECG995 741 OP Amp 14 PIN tachometer philips Ic 741 as I to v converter ECG99 741 op amp pin diagram vco by 741 op amp
Text: PHILIPS E C G INC 17E 0 ^53*^20 0004530 S ■/~."73~/>£>3 Semiconductors Features • Ground referenced tachometer Input interfaces directly with variable reluctance magnetic pickups • Op amp/comparator has floating transistor output • 60 mA sink or source to operate relays, solenoids , transistor as its output. This feature allows either a ground or supply referred load of up to 50 mA. The , INC 17E D ■hbS3TSÖ 00D4540 3 ■7-73 "/3-¿>3 Electrical Characteristics (Vqc = l2 VDo TA


OCR Scan
PDF ECG995 ECG995 tachometer vdo Tachometer circuit schematic diagram dwell meter 741 OP Amp 14 PIN tachometer philips Ic 741 as I to v converter ECG99 741 op amp pin diagram vco by 741 op amp
Not Available

Abstract: No abstract text available
Text: < 8.6V Pre-regulator/Startup ■I Ö7735TS DDD4747 334 ■HV9106/HV9109 Typical , depletion-mode DMOS transistor driven by an error amplifier to form a controlled current path between the V,N , controlling) no current other than leakage is drawn through the high voltage transistor . This minimizes


OCR Scan
PDF HV9106 HV9109 HV9106P HV9106PJ HV9109P HV9109PJ HV9106 HV9109 HV9106/HV9109 20-pin
hv9100

Abstract: No abstract text available
Text: rtup Ö7732S5 0004733 Ö4T 14-24 Out HV9100/HV9101/HV9102/HV9103 Typical , consists of a highvoltage N-channel depletion-mode DMOS transistor driven by an error am plifier to form a , voltage transistor . This mini­ mizes dissipation. The reference consists of a stable bandgap


OCR Scan
PDF HV9100 HV9101 HV9102 HV9103 HV9100P HV9100C HV9100PJ HV9101P HV9101PJ HV9102P hv9100
A7731

Abstract: Nec b 616 2SK1582
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ p1 98.2 ¡SsSsIsK MOS FIELD EFFECT TRANSISTOR 2SK1582 N-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS (Unit : mm) 2.8 ±0.2 3- G- 1.5 0.65Î0°Î6 Marking / © © 1+ I J 1. Source 2. Gate 3. Drain MARK: G18 Gate(G) O— Drain(D) h , °C Storage Temperature Tstg -55 to +150 °C Document No. TC-2347 (O.D.No. TC —7731 A) Date


OCR Scan
PDF 2SK1582 2SK1582, A7731 Nec b 616 2SK1582
BFT65

Abstract: D1279 legiert germanium transistor Siemens Halbleiter diode a811 Germanium drift transistor germanium D1275 siemens GR 90 rectifier
Text: 0 BAR 15-1 0 BAR 16-1 Q 62702 - A772 Q 62702 -A 73 1 Q 62702 - A773 Type Page 0 BAT , : variable capacitance Transistor : low power, audio frequency Transistor : power, audio frequency Diode: tunnel diode Transistor : low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor : power, high frequency Optocoupler , : low power (e.g. thyristor) Transistor : low power, switching Control or switching device: power (e.g


OCR Scan
PDF
1996 - transistor A798

Abstract: A1309 transistor
Text: Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF , 12.99 11.24 8.62 5.58 2.48 –.38 –3.09 –5.58 –7.73 –9.13 –10.02 –10.22 â


Original
PDF PP-38 transistor A798 A1309 transistor
1995 - 6822 TRANSISTOR equivalent

Abstract: transistor A798
Text: Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK , €“.38 –3.09 –5.58 –7.73 –9.13 –10.02 –10.22 –10.72 –11.10 159.85 137.59 115.94


Original
PDF 400MHz PP-38 5963-3232E. 5963-2564E 6822 TRANSISTOR equivalent transistor A798
1998 - nec A1394

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , 0.482 0.480 0.475 0.479 −16.2 −31.5 −49.6 −64.5 −77.3 −89.8 −102.4 â


Original
PDF
1997 - nec a1010

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS , €“52.1 –55.7 –60.4 –61.6 –63.8 –64.1 –67.3 –68.6 –71.9 –74.2 –77.3 V CE = 3


Original
PDF
1998 - Not Available

Abstract: No abstract text available
Text: developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3 , ˆ’74.1 −77.3 VCE = 3 V, IC = 3 mA, ZO = 50 Ω Frequency (GHz) MAG. S11 ANG. (deg.) MAG


Original
PDF
1997 - Not Available

Abstract: No abstract text available
Text: product developed or manufactured by or for Renesas Electronics. DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS , €“51.0 –54.6 –59.2 –61.8 –65.0 –67.5 –70.0 –71.8 –73.7 –75.3 –77.3 â


Original
PDF
2009 - transistor a2160

Abstract: a2324 a2746 a2530
Text: heterojunction bipolar transistor (HBT) process and has an ESD rating of ±1.5 kV (Class 1C). The device is , 0 dBm dB dBm dBm dBc dBc dB 15.4 ±0.05 ±0.19 ±0.02 18.8 34.7 −51.1 −77.3 , -C PKG-003480 0.56 0.36 Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK


Original
PDF ADL5601 OT-89 ADL5601 O-243 09-12-2013-C PKG-003480 OT-89] ADL5601ARKZ-R7 ADL5601-EVALZ transistor a2160 a2324 a2746 a2530
2003 - Not Available

Abstract: No abstract text available
Text: €“55.56 83.15 –63.44 77.30 13 25 –70.71 70.71 135.0 26 –77.30 63.44 27 , 21 41 –70.71 –70.71 225.0 42 –63.44 –77.30 230.6 43 â , 47.14 –88.19 298.1 55 55.56 –83.15 303.8 56 6 63.44 –77.30 309.4 , €“55.56 –77.30 151.9 29 –83.15 140.6 14 12 4 39 129.4 11 2 208.1 22 , €“29.03 –38.27 Home Microstep Position –47.14 –55.56 –63.44 –70.71 –77.30 –83.15 â


Original
PDF A3980 A3981.
1997 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE , €“38.6 –45.2 –51.3 –57.0 –62.4 –67.8 –72.6 –77.3 –81.8 –86.1 –90.6 –95.2 â , €“72.9 –77.3 –81.4 –85.6 –89.9 –94.5 –99.3 –104.7 –110.6 –117.4 –124.3 â


Original
PDF
2001 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE , ˆ’49.6 −53.0 −56.5 −60.3 −64.1 −68.4 −72.7 −77.3 0.573 0.665 0.755 0.854 0.997


Original
PDF
2009 - transistor a2431

Abstract: A2611 8 Pin a2955 a2733 transistor a954 A2611
Text: Max Unit 19.0 20.2 ±0.01 ±0.28 ±0.01 20.1 40.0 −59.4 −77.3 2.9 21.0 dB , Figure 21. 3-Lead Small Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters


Original
PDF ADL5602 OT-89 ADL5602 O-243 09-12-2013-C PKG-003480 OT-89] ADL5602ARKZ-R7 ADL5602-EVALZ transistor a2431 A2611 8 Pin a2955 a2733 transistor a954 A2611
2013 - A35355

Abstract: TRANSISTOR A23336 A10377
Text: ˆ’674.447 −689.430 −704.472 −719.835 −735.470 −750.505 −763.011 −773.947 −785.709 â , Outline Transistor Package [SOT-89] (RK-3) Dimensions shown in millimeters ORDERING GUIDE Model 1


Original
PDF ADL5610 OT-89 ADL5610 O-243 12-18-2008-B OT-89] ADL5610ARKZ-R7 ADL5610-EVALZ OT-89, A35355 TRANSISTOR A23336 A10377
sx3704

Abstract: AP239 Transistor 80139 8C547 2N50B IN2222A 6C131C radio AC176 AC126 sft353 2N2064
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE = = black violet white brown orange gn gr r ye bl = , <*NE$E USE CO 1 i ^1 T Y PE 9 10 1. TYPE Alpha-numerical transistor index 2. M /S Material/Sort C complementary transistor NPN/PNP OG dual germanium transistor OJ dual junction transistor OS dual silicon transistor FET field effect transistor G germanium transistor GD germanium Darlington transistor J junction FET (JFET) M MOSFET ME multiple-emitter transistor M O S metal oxide semiconductor P


OCR Scan
PDF
2001 - transistor A1024

Abstract: A1712 nec a1232
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe , 0.365 0.345 0.330 −68.0 −72.9 −77.3 −82.2 −86.8 −91.2 −96.3 −101.0 â


Original
PDF 2SC5761 2SC5761-T2 transistor A1024 A1712 nec a1232
T35W

Abstract: 65e9 transistor 2SC965 transistor kt 606A sr 6863 D CS9011 sr1k diode KT850 transistor 130001 8d TRANSISTOR st25a
Text: audio pre-amps 1 Transistor Application Slide Rule Features. Find a replacement every time , technician. Assures fast, accurate selec­ tion of the right transistor for your applicatioa Provides a , R E C T IF IE R I« R TRANSISTOR SPECIFICATIONS PART DESCRIPTION CASE NO. TYPE , lifie r High Voltage Silicon Power Transistor Small Signal, Low Noise A m p lifie r Medium Current , A udio A m p lifie r & High Frequency Switching Transistor High Voltage A udio Germanium Power


OCR Scan
PDF 10DB2P 10DB4P 10DB6P 180B6A T35W 65e9 transistor 2SC965 transistor kt 606A sr 6863 D CS9011 sr1k diode KT850 transistor 130001 8d TRANSISTOR st25a
Supplyframe Tracking Pixel