The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
SOT23-5EV-VREG Microchip Technology Inc EVAL BOARD SOT23-5 VOLTAGE REG
SOT23-3EV-VREG Microchip Technology Inc BOARD EVAL VOLT REG SOT23-3
ISL28113SOT23EVAL1Z Intersil Corporation Single General Purpose Micropower, RRIO Operational Amplifier; Package: Eval Board
ISL28114SOT23EVAL1Z Intersil Corporation Single General Purpose Micropower, RRIO Operational Amplifiers; Package: Eval Board
LMH6704MF Texas Instruments 1 CHANNEL, VIDEO AMPLIFIER, PDSO6, SOT23, 6-PIN
LM8365BALMFX27 Texas Instruments 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, SOT23-5

A4T SOT23 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - transistor A4t 45

Abstract: Thomson-CSF ferrites thomson ferrites Thomson-CSF passive components transistor A4t Thomson-CSF A4t 65 d 6650 diode a4t Thomson-CSF ceramic capacitor filter
Text: 4 ± 0.15 A4TE1000A 2450 A4T -1000A 2450 10 ± 0.3 6 ± 0.2 3 ± 0.15 A4TE1000C 1800 A4T -1000C 1800 12.7 ± 0.25 7.14 ± 0.18 4.7 ± 0.13 A4TE1270A 3100 A4T -1270A 3100 12.7 ± 0.25 7.14 ± 0.18 6.35 ± 0.25 A4TE1270B 4400 A4T -1270B 4400 14 ± 0.4 9 ± 0.4 5 ± 0.3 A4TE1400A 2400 A4T -1400A 2400 14 ± 0.4 9 ± 0.4 9 ± 0.3 A4TE1400B 4470 A4T -1400B 4470 16 ± 0.5 9.6 ± 0.3 6.3 ± 0.2 A4TE1600A 3800 A4T


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PDF x10-4 transistor A4t 45 Thomson-CSF ferrites thomson ferrites Thomson-CSF passive components transistor A4t Thomson-CSF A4t 65 d 6650 diode a4t Thomson-CSF ceramic capacitor filter
1999 - DIODE smd marking A4t

Abstract: marking A4t sot23 smd a4t smd marking code A4t A4t smd diode a4t A4T SOT23 smd A4t SOT23 smd code A4p smd diode A4T
Text: Hong Kong. A4t = made in Malaysia. Fig.1 Simplified outline ( SOT23 ) and symbol. LIMITING VALUES , technology, and encapsulated in the small SOT23 plastic SMD package. · High switching speed: max. 4 ns , High-speed double diode BAV70 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D , OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 May 05


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PDF M3D088 BAV70 BAV70 115002/00/04/pp12 DIODE smd marking A4t marking A4t sot23 smd a4t smd marking code A4t A4t smd diode a4t A4T SOT23 smd A4t SOT23 smd code A4p smd diode A4T
2002 - transistor A4t

Abstract: Boolean diode a4t 847kHz binary Phase Shift Keying Modulator Demodulator
Text: Antenna ( A4T /15R) June 2002 Complete data available under NDA. 1/4 SRIX4K SUMMARY DESCRIPTION , Package W4 =180 µm ± 15 µm unsawn wafer A3T/S-ISOR = Half ISO Copper Antenna on tape A4T /15R = 15mm x


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PDF 56MHz 847kHz 64-bit 4096-bit transistor A4t Boolean diode a4t binary Phase Shift Keying Modulator Demodulator
smd a4t

Abstract: A4t diode marking A4t DIODE smd marking A4t
Text: A4t http://www.twtysemi.com sales@twtysemi.com 4008-318-123 2 of 2 TY Semiconductor


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PDF BAV70S OT-363 curreBAV70S smd a4t A4t diode marking A4t DIODE smd marking A4t
1998 - INCOMING RAW MATERIAL INSPECTION

Abstract: smd led 5050 0.5 w datasheet uei310 INCOMING RAW MATERIAL INSPECTION procedure smd 6 led 5050 datasheet smd led 5050 datasheet airgap Vs Al Value in Ferrite Core TOROIDS Design Considerations smd transistor A6t smd led 5050
Text: No file text available


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smd A4t

Abstract: DIODE smd marking A4t A4t smd diode a4t transistor A4t 85 MARKING A4T A4t diode smd diode A4T smd marking a4t transistor A4t
Text: 2 A4t www.kexin.com.cn V fr ; measured at IR = 1 mA; when switched from IF = 10 mA


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PDF BAV70S OT-363 smd A4t DIODE smd marking A4t A4t smd diode a4t transistor A4t 85 MARKING A4T A4t diode smd diode A4T smd marking a4t transistor A4t
CO-241

Abstract: TL 0621 N
Text: PART# : LLP—LXR33513 —4T REPLACES PART# : LLP—LX1210—4V—195 UNCONTROLLED DOCUMENT 1JMESS


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PDF LXT040331 UL94-V-0. SML-LX121Dxx CO-241 TL 0621 N
Not Available

Abstract: No abstract text available
Text: Source 1 2 4551372 OODl?1 Û4T ^ 3 4 Solid State Electronics Center • 12001 State Highway


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PDF
A4t 65

Abstract: No abstract text available
Text: , NJ, USA, 07203-1704 Toll-Free (800) 392-2474 - ^00373 000D m A4T 908 245-2233 Fax: (908> 245


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PDF SF161 SF166 T0-220A, MIL-S-202, TGDQ37Ö A4t 65
transistor A4t

Abstract: A4t transistor transistor A4t 35 BF982 transistor A4t 17 Transistor BF982 MARKING A4T A4t 65 transistor A4t 45 transistor a4t 15
Text: □DBS'ïSB A4T This Material Copyrighted By Its Respective Manufacturer BF982 _A RATINGS Limiting values


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PDF BF982 20jiA transistor A4t A4t transistor transistor A4t 35 BF982 transistor A4t 17 Transistor BF982 MARKING A4T A4t 65 transistor A4t 45 transistor a4t 15
ovenaire

Abstract: OA61
Text: COVER BRITE NICKEL finish« BASE: ELECTRO TIN marking' „_4t DECAL OR EPOXY INK B RETYPED &


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PDF MODELOSC88-1-J 000MHz 88-1-X ovenaire OA61
B857

Abstract: water flow sensor "water Flow Sensor" silicon rectifier gq b859 SKWD7000 U4T DIODE B-857
Text: S1E D m Û13bb71 □0Q3flcìb Û4T mZZKG SÊhÏKRÔjTÏNC 5EMIKRDN Vrsm/Vrrm Ifav (sin. 180; Tw = 40 °C) V 7000A(8l/min) 200 SKWD 7000/02 400 SKWD 7000/04 600 SKWD 7000/06 High Current Rectifier Diode Blocks for Water Cooling SKWD 7000 _ . 13 Symbol Conditions SKWD 70001) I FM Volw = 4l/min;Tw = 40 °C; ED = 100% Volw = 8l/min 19 kA 22 kA Ifsm ft Tvj = 40 °C 10 ms Tvj = 180°C Tvj = 40 °C Tvj = 180 °C 120 kA 100 kA 72 • 10PA2s 50 ■10^Azs Vf VfTO) rr 2 ii P P P 10 o o CM CO CO 11


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PDF 13bb71 10PA2s fll3bb71 T-55T SKWD7000 B8-59 B857 water flow sensor "water Flow Sensor" silicon rectifier gq b859 U4T DIODE B-857
2SC2085

Abstract: No abstract text available
Text: Panasonic b^3SÔSE 001b3b7 Ô4T —364— Power Transistors 2SC2085 Pc -Ta (1)Tc-T. ' , (2) Wit h a 50


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PDF 2SC2085 2SC2085
smd diode marking 2J

Abstract: IR LFN smd a4t K711 DIODE vn SMD DG1S6 LFN ir marking ANs diode smd marking S0
Text: # 50Hz sine wave. Resistance load Ta-40"C "1 0.5 A Ta = «4t '2 0.7 T/ = 128t lo SXiff-t


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PDF 160mm" J53Z-1) smd diode marking 2J IR LFN smd a4t K711 DIODE vn SMD DG1S6 LFN ir marking ANs diode smd marking S0
2007 - Not Available

Abstract: No abstract text available
Text: band marking Weight : 0.012 gram Voltage class Cathode mark Special spec. A4T . Amps class


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PDF SSCD104TH OD-121 50mVP-P
HJM1458D

Abstract: HJM145BM NJM1458 NJM145B
Text: = 1 kHz - 98 - dB NJM1458 ■4t 14 15Ü 1M.1m.li (V+/V"=±15V) ?H K 5 ® S 4 Icc (mA) 3 2 1 + Vom Â


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PDF NJM1458 NJM145BÂ NJM741OT HJM1458D HJM145BM 15V0TÂ NJM1458 HJM145BM NJM145B
1S400

Abstract: No abstract text available
Text: ±AR" ±4T ±_iRT ±ÌT CO (Ö) CO (il) ( C) -200 6.8 1.6 5.1 1.2 -100 2.9 0.3 2.4 0.6 0 2.0 0.5


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PDF HEL-776/HEL-777 -100CT: 00G75 903x10: 02x10' 775x10' 0x101- x101- to540 1S400
Not Available

Abstract: No abstract text available
Text: 100 -65 to +150 -65 to +150 T Stg Ö4T FR Units 607G V 1000 700 V V 1000 A Notes


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PDF FR601G FR607G MIL-STD202, FR607G) 50Vdc D00D7D5
2002 - A6W 37

Abstract: A7W 14 a7w 16 a7w 37 A7W 34 A7W 29 ds1480 a4w 29 DS1722 A7W 13
Text: A4 A4-T B1-S A6 A7 A6 A7 A6 A7 A5 A6 B2 B3 B3 B4 B4 B5 DS1231 DS1245 DS1249 DS1258 DS1258 DS1314 , A5 A4 A3-L A4-P A4-T B1-P B1-T B1 A4-R B1 B1-T A6 A7 A6 A7 A6 A7 A5 A6 B3 B3 B4 B4 B5 B5 DS1231


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PDF DS21Q43 DS2401 DS12885 DS1425 DS1501 DS1511 DS1553 DS1554 DS1556 A6W 37 A7W 14 a7w 16 a7w 37 A7W 34 A7W 29 ds1480 a4w 29 DS1722 A7W 13
a1271

Abstract: RCW120
Text: * n 30 50 70 90 110 130 150 170 AMBIENT TEMP. DEG. CENTIGRADE ■4T RC


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PDF RC-550 RCWP/RCW-550 RC-575 RCWP/RCW-575 m2512 RC-1206 RCWP/RCW-1206 RC-540 RCWP/RCW-540 a1271 RCW120
HTMOS

Abstract: HTANFET 30Q10
Text: DIAGRAM o Case = GND HTANFET 12 3 4 4551872 dOO!?1^ Û4T Solid State Electronics Center • 12001 State


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PDF H551B72 HTMOS HTANFET 30Q10
EN3445

Abstract: 2SK1442 2420I
Text: «4T . M 1 JEDEC: TO-220AÜ v.* S: Source 0: Drain G: Gate SANYO Electric Co., Ltd


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PDF EN3445 2SK1442 10/iS, 2420I
2003 - CRX14

Abstract: No abstract text available
Text: Antenna on Tape A4T = 15mm x 15mm Copper Antenna on Continuous Tape A4S= 15mm x 15mm Copper Singulated


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PDF 56MHz 847kHz 64-bit 4096-bit CRX14
esc 14t30

Abstract: No abstract text available
Text: €” 5 0 pA - 2 . 0 mA — 1 .0 mA -1 .2 v d c Seríes Series Series Series Ï4T 14G


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PDF 14Tg140 280MAX. 14G10 14G15 14G20 14G25 14G50 14G75 14G1002 500ppm/Â esc 14t30
BO 615 DIODE

Abstract: 2 Wavelength Laser Diode thermistor s 201 E8822 SLD302XT-3 SLD302XT-21 SLD302XT-2 SLD302XT-1 SLD302XT B-01
Text: wavelength (Po=180mW) \n c a? ■4-t c c .5 "O TO L. CD > <1> rr 805 615 0 25 Wavelength (nm


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PDF SLD302XT 200mW SLD302XT 180mW BO 615 DIODE 2 Wavelength Laser Diode thermistor s 201 E8822 SLD302XT-3 SLD302XT-21 SLD302XT-2 SLD302XT-1 B-01
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