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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CUZ30V CUZ30V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation
CUZ20V CUZ20V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Visit Toshiba Electronic Devices & Storage Corporation
CEZ6V2 CEZ6V2 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
CUZ6V8 CUZ6V8 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Visit Toshiba Electronic Devices & Storage Corporation
CUZ12V CUZ12V ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
MUZ5V6 MUZ5V6 ECAD Model Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

A26 diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - A26 diode

Abstract: diode A26
Text: Rectifier Diode D 4709 N 20.28 BIP AM / 00-10-23, K.-A. Rüther A26 /00 Z. Nr.: 1 N Seite , Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 , . Rüther data of publication: 00-10-23 revision: 1 A26 /00 °C BIP AM approved by: J. Novotny , Rectifier Diode D 4709 N 20.28 N Vorläufige Daten Preliminary Data Mechanische Eigenschaften , notes. A26 /00 g mm C Kühlkörper/heatsinks : KE01800W BIP AM / 00-10-23, K.-A. Rüther kN


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2000 - 4709

Abstract: KE-01 8000D
Text: Rectifier Diode D 4709 N 20.28 BIP AM / 00-10-23, K.-A. Rüther A26 /00 Z. Nr.: 1 N Seite , Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 , . Rüther data of publication: 00-10-23 revision: 1 A26 /00 °C BIP AM approved by: J. Novotny , Rectifier Diode D 4709 N 20.28 N Vorläufige Daten Preliminary Data Mechanische Eigenschaften , notes. A26 /00 g mm C Kühlkörper/heatsinks : KE01800W BIP AM / 00-10-23, K.-A. Rüther kN


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2000 - A26 diode

Abstract: 4709N
Text: Rectifier Diode D 4709 N 20.28 BIP AM / 00-10-23, K.-A. Rüther A26 /00 Z. Nr.: 1 N Seite , Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 , . Rüther data of publication: 00-10-23 revision: 1 A26 /00 °C BIP AM approved by: J. Novotny , Rectifier Diode D 4709 N 20.28 N Vorläufige Daten Preliminary Data Mechanische Eigenschaften , notes. A26 /00 g mm C Kühlkörper/heatsinks : KE01800W BIP AM / 00-10-23, K.-A. Rüther kN


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2001 - A26 diode

Abstract: SD-50 Rectifier Diode
Text: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N , A26 /00 Seite/page 1 Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Vorläufige Daten Preliminary Data Preliminary Data Seite 3 page 3 , notes. BIP AM / 00-10-23, K.-A. Rüther A26 /00 Seite/page 2 Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N BIP AM / 00-10-23, K.-A


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PDF A26/00 A26/00 A26 diode SD-50 Rectifier Diode
2000 - A26 diode

Abstract: 4709N 4709 KE-01
Text: Rectifier Diode D 4709 N 20.28 BIP AM / 00-10-23, K.-A. Rüther A26 /00 Z. Nr.: 1 N Seite , Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 , . Rüther data of publication: 00-10-23 revision: 1 A26 /00 °C BIP AM approved by: J. Novotny , Rectifier Diode D 4709 N 20.28 N Vorläufige Daten Preliminary Data Mechanische Eigenschaften , notes. A26 /00 g mm C Kühlkörper/heatsinks : KE01800W BIP AM / 00-10-23, K.-A. Rüther kN


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PDF A26/00 A26 diode 4709N 4709 KE-01
RT9167

Abstract: RT9167A a26 transistor marking RT9167 marking a26
Text: -8 DS9167/ A-26 March 2007 www.richtek.com 1 RT9167/A Functional Pin Description Pin Name Pin , DS9167/ A-26 March 2007 RT9167/A Absolute Maximum Ratings Input Voltage , DS9167/ A-26 March 2007 www.richtek.com 3 RT9167/A Parameter Symbol Test Conditions Min , VOUT is VOUT(NORMAL) - 100mV. www.richtek.com 4 DS9167/ A-26 March 2007 RT9167/A Typical , -25 0 25 50 75 Temperature (° C) DS9167/ A-26 March 2007 100 125 -50 -25


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PDF RT9167/A 300mA/500mA RT9167/A 100mV DS9167/A-26 RT9167 RT9167A a26 transistor marking RT9167 marking a26
2001 - A26 diode

Abstract: No abstract text available
Text: „¦ ID = –2.6 A, 2 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS , optimized for battery power management applications. • –2.6 A, –12 V. Applications • Fast , ID Drain Current –2.6 –10 A PD Maximum Power Dissipation (Note 1a) 0.5 W , 40 ID(on) On–State Drain Current VGS = –4.5 V, ID = –2.6 A VGS = –2.5 V, ID = â , €“5 V gFS Forward Transconductance VDS = –5 V, ID = –2.6 A 10 VDS = –6 V, f =


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PDF FDN306P A26 diode
2001 - marking A26

Abstract: No abstract text available
Text: optimized for battery power management applications. • –2.6 A, –12 V. Applications • Fast , ID Drain Current –2.6 –10 A PD Maximum Power Dissipation (Note 1a) 0.5 W , 30 39 54 40 ID(on) On–State Drain Current VGS = –4.5 V, ID = –2.6 A VGS = –2.5 V , €“4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –2.6 A 10 VDS = , , RGEN = 6 Ω Gate–Drain Charge VDS = –6 V, VGS = –4.5 V ID = –2.6 A, 2 nC 3


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PDF FDN306P marking A26
2014 - Relay

Abstract: No abstract text available
Text: 0 — With Diode (DC coil only) RH1B-UD 0 RH1V2-UD 0 DC6V, DC12V, DC24V, DC48V, DC110V With Indicator and Diode (DC coil only) RH1B-ULD 0 — DC12V, DC24V, DC48V, DC110V , RH2B-UT 0 — With Diode (DC coil only) RH2B-UD 0 RH2V2-UD 0 With Indicator and Diode (DC , RH3B-ULC 0 — Top Bracket Mounting RH3B-UT 0 — With Diode (DC coil only) RH3B-UD 0 — With Indicator and Diode (DC coil only) RH3B-ULD 0 — Standard RH4B-U 0


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PDF DC12V, DC24V, DC48V, DC110V Relay
2006 - Not Available

Abstract: No abstract text available
Text: „¦ typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate , )Note1 Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel , „¦ ID = –2.6 A, VGS = –10 VNote3 RDS(on) — 56 79 mΩ ID = –2.6 A, VGS = â , V ID = –2.6 A, VDS = –10 VNote3 Forward transfer admittance Input capacitance Output , Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage


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2005 - diode ZENER A26

Abstract: ZENER A26 A26 zener A26 ZENER DIODE A26 diode
Text: Clear Lens Color Everlight Electronics Co., Ltd. Device Number:DLE-033- A26 http , Current Electrostatic Discharge Everlight Electronics Co., Ltd. Device Number:DLE-033- A26 Symbol IF , Electronics Co., Ltd. Device Number:DLE-033- A26 http\\:www.everlight.com Established date: 09-02-2005 , Number:DLE-033- A26 http\\:www.everlight.com Established date: 09-02-2005 Rev: 2 Page: 4 of 7 , Electro-Optical Characteristics Curves Everlight Electronics Co., Ltd. Device Number:DLE-033- A26 http


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PDF T-13/4) 334-15/W2C3-1RTB T-13/4 CIE1931. 334-15/W2C3-1RTB DLE-033-A26 diode ZENER A26 ZENER A26 A26 zener A26 ZENER DIODE A26 diode
idec Ab6-V

Abstract: DIODE marking A19 as6-k MT-002 hw 0936 LR48366 AL6H M14 L-120L U906 diode A28
Text: and reverse polarity protecction diode . A-26 www.idec.com USA: (800) 262-IDEC or (408 , . LR48366 1. LED lamps contain a built-in current-limiting resistor and reverse polarity protection diode , lamp contains a built-incurrent-limiting resistor and a protection diode . LED's don't "burn out , table at the right. To order as sub-assembled, see page A-20. For accessories, see page A-26 . For , . 2. Buttons which are rated IP65 include a waterproof rubber gasket. 3. For accessories, see page A-26


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PDF 262-IDEC 317-IDEC idec Ab6-V DIODE marking A19 as6-k MT-002 hw 0936 LR48366 AL6H M14 L-120L U906 diode A28
idec Ab6-V

Abstract: diode ZENER A26 5V buzzer 9mm X 12mm SELECTOR SWITCH idec UZ6-F10 A20 ZENER diode AB6Q-M100 AB6M AL6Q-A200 AL6M-M100
Text: conditions and load). LED lamp contains a built-incurrent-limiting resistor and a protection diode . LED , right. 2. To order as sub-assembled, see page A-20. 3. For accessories, see page A-26 . 4. For , gasket. 3. For accessories, see page A-26 . A-20 www.idec.com USA: (800) 262-IDEC or (408 , lamp is included in unit and contains a current-limiting resistor and a protection diode . (External resistor not required.) 4. To order as sub-assembled, see page A-22. 5. For accessories, see page A-26


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PDF E55996 LR21451 500m/sec2 200m/sec2 262-IDEC 317-IDEC idec Ab6-V diode ZENER A26 5V buzzer 9mm X 12mm SELECTOR SWITCH idec UZ6-F10 A20 ZENER diode AB6Q-M100 AB6M AL6Q-A200 AL6M-M100
2004 - LT5503

Abstract: No abstract text available
Text: DESCRIPTIO FEATURES s s s s s s s s s Temperature Compensated Internal Schottky Diode RF , The RF input voltage is peak detected using an on-chip Schottky diode . The detected voltage is , temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small ThinSOTTM , 800 400 300MHz 5000MHz 6000MHz 7000MHz 0 –30 –26 –22 –18 –14 –10 –6 –2 2 , 85°C 400 4 0 –30 –26 –22 –18 –14 –10 –6 –2 2 RF INPUT POWER (dBm) 8


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PDF LTC5531 300MHz 32dBm 10dBm OT-23 LTC1758 LTC1957 LTC4400 LT5503
zl58

Abstract: marking 3L2 diode DIODE 3L2 abb CA5-10 AF460 CAL18-11 AF145 WB75-A ABB MCCB 160 VM750H
Text: Auxiliary contact blocks ­ Standard Maximum number of contact blocks Positioning 4 blocks: A9 ­ A26 , blocks: A45 ­ A110 AE45 - AE110 AF45 - AF110 CAL5-11 CA5-10 A9 ­ A26 -40-00 A30 ­ A110 Front , A110 AE45 - AE110 AF45 - AF110 Front mounting (single pole) 4 blocks: A9 ­ A26 AE9 ­ AE26 , Type Main poles Built-in auxiliary contacts A9 ­ A26 A9 ­ A26 A9 ­ A26 A9 ­ A26 AE9 ­ AE26 AL9 ­ AL26 ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ A9 ­ A16 A9 ­ A26 ­ 3 0 ­ 2 2 ­ 3 0 ­


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PDF AE110 AF110 CAL5-11 CA5-10 A26-40-00 A40-30-10 AL40-30-10 AE9-AE45 zl58 marking 3L2 diode DIODE 3L2 abb CA5-10 AF460 CAL18-11 AF145 WB75-A ABB MCCB 160 VM750H
2010 - KV1837KTR-G

Abstract: KV1837 KV1837KTR
Text: KV1837 3V Series VCD for Communications Equipment 3VVCD Feature Very Low Voltage Operation: VOP=1.0 to 3.0V : VOP=1.0~3.0V Excellent Linearity of the C-V Curve C-V Extra Large Capacitance Ratio: A=2.6 to : A=2.6 ~ Reverse Voltage VR=28V VR=28V IF=7mA Forward Current IF=7mA Operating Temp. Range TOP=-55 to +85°C TOP=-55~+85°C Electrical Characteristics Part Name VR.MAX Capacitance(pF , 2.9 1/3 1.2@1.5V,100MHz 4.50 5.50 6.70 3 * Diode Capacitance measured with Agilent 4279A or


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PDF KV1837 100MHz 4279AOSC 4291B KV1837KTR-G KV1837 KV1837KTR
2001 - Not Available

Abstract: No abstract text available
Text: applications operating in the 300MHz to 3.5GHz range. A temperature compensated Schottky diode peak detector , optimized for operation from a single lithium-ion cell or 3xNiMH. Internal Schottky Diode RF Detector , Schottky diode . The detected voltage is buffered and supplied to the VOUT pin. A power saving shutdown , 2.7V to 6V –28 to 18 –26 to 18 –24 to 16 –22 to 16 dBm dBm dBm dBm RFIN Input , „¦ SERIES TERMINATION –40°C 25°C 85°C 1000 1000 100 –32 –26 –20 –14 –8 â


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PDF LTC5505-1/LTC5505-2 5505-X 300MHz LTC5505-1, 28dBm 18dBm LTC5505-2, 32dBm 12dBm
LG 42 t

Abstract: B460 B480 LSB480 LYB480 B480-EH
Text: SIEMENS AKTIEN6ESELLSCHAF SIEMENS I FEATURES * Red Partly Diffused Lens, LR B480 and LSB480 Yellow Partly Diffused Lens, LY B480 Green Partly Diffused Lens, LG B480 * TP/* (5 mm) Size Rectangular Shape * Minimum Lead Length 1" * V10" Lead Spacing * l/C Compatible DESCRIPTION The LR B480 is a standard red GaAsP LED lamp. The LS B480 super-red and LY B480 yellow are light emitting diode lamps , > vF 1.6 (£2 0) 2 0 ( £2.6 ) 2 0 (£2 6) 2 0 ( £2.6 ) V Reverse Current (VH=5 V) 0.01 (¿10) 0 01 (Â


OCR Scan
PDF LSB480 6235b05 G87135 sup01 B480-BD B480-GK B480-C B460-H B480-EH LG 42 t B460 B480 LYB480
2004 - Not Available

Abstract: No abstract text available
Text: current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel , 20.4 3.4 1.5 Pch –80 ±20 –2.6 –15.6 –2.6 1.5 150 Storage temperature Tstg â , time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes , charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.2.00, Oct.06.2004, page 3 of 10 Test


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PDF do-900 Unit2607
2011 - Not Available

Abstract: No abstract text available
Text: NTF2955, NVF2955, NVF2955P Power MOSFET −60 V, −2.6 A, Single P−Channel SOTâ , Compliant http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V 145 mW @ −10 V −2.6 A , Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS ±20 V ID −2.6 , , RG = 9.1 W RL = 25 W ns 11 7.6 td(OFF) 65 tf 38 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C −1.10 TJ = 125Â


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PDF NTF2955, NVF2955, NVF2955P NTF2955/D
Not Available

Abstract: No abstract text available
Text: Diode Voltage VDD = Max., IIN = –18mA IIH Input HIGH Current VDD = Max., VIN = VDD  , Input LOW Voltage Guaranteed LOW level –0.5 VIK Clamp Diode Voltage VDD = Max., IIN = â , Input LOW Voltage Guaranteed LOW level –0.5 VIK Clamp Diode Voltage VDD = Max., IIN = â , –1.8 @ –3 dB 2.0 Units –26 OIRR Max. XTALK BW Bandwidth dB , Loss f = 1.65 GHz –2.5 @ –3 dB 2.8 Units –26 OIRR Max. XTALK BW


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PDF PI2DBS212 PI2DBS212 28-Contact 28-Contact, PD-2034 PI2DBS212ZHEX
2014 - NTF2955T1G

Abstract: No abstract text available
Text: NTF2955, NVF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features â , ˆ’10 V −2.6 A Power Supplies PWM Motor Control Converters Power Management P−Channel D , Continuous Drain Current (Note 1) G ±20 V ID −2.6 A TA = 85°C 4 Drain 4 , , RG = 9.1 W RL = 25 W ns 11 7.6 td(OFF) 65 tf 38 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C −1.10 TJ = 125Â


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PDF NTF2955, NVF2955 NTF2955/D NTF2955T1G
DIODE B12 51

Abstract: diode b27 diode b18 DIODE B23 diode b29 a30 DIODE 74ABT244 DIODE B21 millipaqtm QS74FCT4X2244ATQ3
Text: B22 A26 B26 A30 B30 A19 B19 A23 B23 A27 B27 A31 B31 MDSL-00119-01 MAY 1 , A15 GND Vcc A16 A17 A18 A19 A20 A21 A22 A23 GND Vcc A24 A25 A26 A27 A28 A29 A30 , Input Voltage (for a pulse width 20 ns) . ­3.0V DC Input Diode Current with VIN < 0 . ­20 mA DC Output Diode Current with VOUT < 0


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PDF QS74FCT4X244T, QS74FCT4X2244T 32-Bit QS74FCT4X244ATQ3 QS74FCT4X244CTQ3 QS74FCT4X2244ATQ3 74F244 74ABT244, 74FCT244T DIODE B12 51 diode b27 diode b18 DIODE B23 diode b29 a30 DIODE 74ABT244 DIODE B21 millipaqtm QS74FCT4X2244ATQ3
2009 - Not Available

Abstract: No abstract text available
Text: (pieces) Type ∗1 Taping 8000 RW1A013ZP (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain Absolute , Continuous Pulsed Drain current Source current (Body diode ) Total power dissipation Channel , ˆ—1 ∗2 Limits −12 ±10 ±1.3 ±2.6 −0.5 −2.6 0.7 150 −55 to +150 Unit V V A , 4.6Ω ID= −1.3A RG=10Ω VGS= −4.5V ∗Pulsed Body diode characteristics (Source-drain


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PDF RW1A013ZP R0039A
2012 - 473 nm

Abstract: No abstract text available
Text: CW473 1-80 mW TECHNICAL DATA BLUE DIODE PUMPED SOLID STATE LASER MODULE Solid state 473 nm laser module of compact size, long lifetime, and low cost. Specifications Wavelength Output Power Transverse Mode Operating Mode Power Stability (rms) Warm-up time Beam Divergence (full angle) Beam Diameter (at the aperature) Supply Voltage Operating Temperature Expected Lifetime Warranty period , 1-80 mW 1 of 2 Outline dimensions Ø26.0 x 55.5 mm², 0.3 kg 3V PCB Ø26 x 15 mmÂ


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PDF CW473 TEM00 473 nm
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