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Part Manufacturer Description Datasheet Download Buy Part
UDT020A0X3-SRZ GE Critical Power CONV DIGITAL 5.5V 20A POL SMD
APXS003A0X-SRDZ GE Critical Power CONVER DC/DC 0.59 5.5V @ 3A SMD
CMD95-21SYGC/TR7 Visual Communications Company LED SMT 2-SMD Gull Wing 1.9mm Yellow Green
CMD95-21SRCTR10 Visual Communications Company LED SMT 2-SMD Z-bend 1.9mm Red
6300T15 Visual Communications Company Circuit Board Indicator LED 3mm SMD Single Level Right Angle 2V/2.2V Red/Green Tape&Reel
6300T7 Visual Communications Company Circuit Board Indicator LED 3mm SMD Single Level Right Angle 2V Yellow Tape&Reel

A1t smd Datasheets Context Search

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A1t smd

Abstract: SMD a1T Transistor smd diode A1T A1T SMD diode A1t smd transistor marking A1t a1t diode smd A1t A1t marking diode a1t marking
Text: Diodes SMD Type High-Speed Double Diode Array BAW56S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 Small plastic SMD package 0.36 High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V +0.05 0.95-0.05 Repetitive , . www.kexin.com.cn 1 Diodes SMD Type BAW56S Electrical Characteristics Ta = 25 Parameter Symbol , 10 mA; R L = 100 forward recovery voltage Marking Marking 2 A1t www.kexin.com.cn


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PDF BAW56S OT-363 A1t smd SMD a1T Transistor smd diode A1T A1T SMD diode A1t smd transistor marking A1t a1t diode smd A1t A1t marking diode a1t marking
TMP68HC11A1T3

Abstract: TOSHIBA 0 el suffix tmp68hc11a0t
Text: TOSHIBA TMP68HC11A0T-3/ A1T -3 The TMP68HC11A1T-3/TMP68HC11A0T-3 microcontroller (MCU) device , MCU applies to the TMP68HC1X A1T -3/TMP68HC11A0T-3 MCU with the exceptions provided in this appendix , mA One pin at a time, observing maximum power dissipation limits. MCU11A0T/ A1T -1 ^ 0 ^ 7 2 4 ^ 0 0 3 ^ 7 5 0 2flS TOSHIBA 1.2 TMP68HC11AQT-3/ A1T -3 DC ELECTRICAL CHARACTERISTICS (VDD = , oh V oh M CU11A0T/ A1T -2 D O S A S I 111 TOSHIBA TMP68HC11A0T-3/ A1T -3 Vdd


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PDF TMP68HC11A0T-3/A1T-3 TMP68HC11A1T-3/TMP68HC11A0T-3 TMP68HCUA1/A0 TMP68HC11A8 TMP68HC1X A1T-3/TMP68HC11A0T-3 TMP68HC11A0/A1x-3 DIP48-P-600 48PIN SDIP64-P-750 TMP68HC11A1T3 TOSHIBA 0 el suffix tmp68hc11a0t
A1t smd

Abstract: a1t MARKING
Text: WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time — l ACC = cs 35 • Pin Compatible with 4K x 8 Bipolar PROMs • Immune to Latch-UP ns : 20 ns — Up to 200 mA • Low Power Consumption • Fast Programming • DESC SMD No , A3 [ ] CSIWpp a2 ] A1t [ A, C AoC ] CS2 O [ o ]o 6 ]° 5 :o 4 :o 3 O , will not include the initials "WS." * SMD product. See page 5-1 for DESC SMD numbers. PROGRAMMING


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PDF WS57C43C S57C43C WS57C43C MIL-STD-883C WS57C43C-35CMB* WS57C43C-35TMB* WS57C43C-45TMB* A1t smd a1t MARKING
A1t smd

Abstract: smd diode A1T a1t diode a1t MARKING A1T SMD diode
Text: Product specification BAW56S SOT-363 Unit: mm +0.1 1.3-0.1 0.65 0.525 Features +0.15 2.3-0.15 +0.1 1.25-0.1 Small plastic SMD package 0.36 High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V +0.05 0.95-0.05 Repetitive peak forward current:max. 450 mA. +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Repetitive peak reverse , Marking A1t http://www.twtysemi.com sales@twtysemi.com 4008-318-123 2 of 2 TY


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PDF BAW56S OT-363 A1t smd smd diode A1T a1t diode a1t MARKING A1T SMD diode
HAA0-51405R4649

Abstract: HAA9 TA12004 HAA0-51405R4347 HFA3624IA1K HAA0-51045R4194 haa9p a1y PACKAGE a1t diode ICL8013
Text: S A3J OBSOLETE TECHNOLOGY ISIL NONE ABRAMOWITZ (408) 891-3290 S A1T Page , REPLACEMENT PART ISIL 10410208-B3 ABRA,PWOTZ S A1T 164034-021-0D OBSOLETE TECHNOLOGY ISIL NONE ABRA,PWOTZ S A1T 164034-051-0D OBSOLETE TECHNOLOGY ISIL NONE ABRA,PWOTZ S A1T 5962-8954001LA 050 NOT ALIGNED WITH BUSINESS OBJECTIVE ISIL HM6 , NONE ABRA,PWOTZ S A1T 60011110 OBSOLETE TECHNOLOGY NONE NONE ABRA,PWOTZ S


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PDF 06-Mar-01 ICL8013BCTX 30-Mar-01 29-Jun-01 ICL8013CCTX 12-Mar-01 CA30393 HAA0-51405R4649 HAA9 TA12004 HAA0-51405R4347 HFA3624IA1K HAA0-51045R4194 haa9p a1y PACKAGE a1t diode ICL8013
A1t smd

Abstract: A2t diode smd SMD a1T Transistor A1t smd transistor smd A1T smd diode A1T a1t diode RFBLN2012090A1T LTCC X band VINCENT
Text: Walsin Technology Corporation SMD Balun-Unbalance Transformer RFBLN2012090AT Series Patent Pending Multi Layer Chip BALUN ­ 2012 (0805) For ISM Band 2.4GHz Application SOLDER LAND PATTERN FEATURES Figure LTCC ( Low Temperature Cofired Ceramics ) Technology 3 Miniatured Size 2.00 x 1.25 x 0.95 mm Low Insertion Loss reduces power consumption Low inband Amplitude and Phase imbalance , Balance/ Unbalance impedance is upon requested. ELECTRICAL CHARACTERISTICS A0T A1T A2T 50


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PDF RFBLN2012090AT A1t smd A2t diode smd SMD a1T Transistor A1t smd transistor smd A1T smd diode A1T a1t diode RFBLN2012090A1T LTCC X band VINCENT
smd code A1t

Abstract: A1t smd smd diode A1T DIODE smd marking a1t 22 MGL159 A1t marking diode MSA370 A1T SMD diode MARKING CODE A1T a1t MARKING
Text: PINNING · Small plastic SMD package PIN DESCRIPTION · High switching speed: max. 4 ns 1 , planar technology, and encapsulated in the small SMD SOT363 plastic package. 1 2 Top view 3 MGL159 MSA370 Marking code: A1t . Fig.1 Simplified outline (SOT363) and symbol. LIMITING


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PDF MBD128 BAW56S OT363 SC-88 smd code A1t A1t smd smd diode A1T DIODE smd marking a1t 22 MGL159 A1t marking diode MSA370 A1T SMD diode MARKING CODE A1T a1t MARKING
smd code A1t

Abstract: A1T SMD diode A1t smd sot23 marking A1T a1t MARKING marking H01 PMBD2836 PMBD2835 smd marking code KN 134 B 360 SMD
Text: Philips Semiconductors Product specification High-speed double diodes PMBD2835; PMBD2836 FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 35 V and 75 V respectively • Repetitive peak reverse voltage: max. 85 V • Repetitive , , fabricated in planar technology, and encapsulated in small plastic SMD SOT23 packages. MARKING PINNING , ; typical values. 1996 Sep 18 711DÛ2b 01Dfl733 Û1T This Material Copyrighted By Its Respective


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PDF PMBD2835; PMBD2836 PMD2835, PMD2836 PMBD2835 PMBD2836 711DflEb smd code A1t A1T SMD diode A1t smd sot23 marking A1T a1t MARKING marking H01 smd marking code KN 134 B 360 SMD
2012 - TEA172X

Abstract: No abstract text available
Text: ©) Product TEA1721 TEA1723 AT BT DT FT A1T B1T D1T F1T AT BT DT FT A1T B1T D1T F1T


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PDF TEA172x TEA1721AT TEA172X
TMP68HC11A0T

Abstract: tmp68hc11 TMP68HC11A8
Text: TMP68HC11A0T-3/ A1T -3. Refer to "1. Electrical Specifications" in "2.2 TMP68HCHA0T-3/ A1T -3". 1.1 FEATURES The


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PDF TMP68HC11A8 TMP68HC11A8 TMP68HC11A8, TMP68HC11A0T-3/A1T-3. TMP68HCHA0T-3/A1T-3" MCU11A8-2 M6800 M6801 TMP68HC11A0T tmp68hc11
smd code A1t

Abstract: A1t smd PSB6521-2 PSB 6520-2 DIODE SMD V05 smd diode A1T 6 pin SMD CODE PJT sMD .v05 code 842 8 PIN SMD 652X-Y
Text: SIEMENS Tone Ringer (TRI) PSB 652X-Y Bipolar IC Special Features and Ordering Codes of the Different Devices Typ Tone Frequency Ratio Tolerance Integrated Z-Diode Package Ordering Code PSB 6520-2 1.38 ±5% yes P-DIP-8 Q67000-A8093 PSB 6521-2 1.25 ±5% yes P-DIP-8 Q67000-A8094 PSB 6523-T 1.25 ±5% select. (delivered in four colour groups) no Miniature plasëô package similar to P-DSO-8 ( SMD , (independent of H,) Rgure 12.1 PSB 6521-2 PSB 6523-T Frequencies A1T and /2t kHz versus resistance Ft? 1 2 5


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PDF 652X-Y Q67000-A8093 Q67000-A8094 6523-T Q67000-A8073 100hfl 2pF/35V 18x11) smd code A1t A1t smd PSB6521-2 PSB 6520-2 DIODE SMD V05 smd diode A1T 6 pin SMD CODE PJT sMD .v05 code 842 8 PIN SMD 652X-Y
smd transistor A1t

Abstract: SMD a1T Transistor transistor SMD 33g TRANSISTOR SMD MARKING CODE 3t1 A1t smd transistor TRANSISTOR A1t smd diode A1T A1T TRANSISTOR
Text: fl235bQ5 D 1 3 3 0 4 7 Ö1T 06.99 BSP 372 Infineo n technologies Avalanche energy , “Package Information” . SMD = Surface Mounted Device Data Book 1060 ■B235bG5 D13 377 T


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PDF OT-223 67000-S300 E6327 S35bQ5 SQT-89 B535bQ5 D13377Ã B235bG5 smd transistor A1t SMD a1T Transistor transistor SMD 33g TRANSISTOR SMD MARKING CODE 3t1 A1t smd transistor TRANSISTOR A1t smd diode A1T A1T TRANSISTOR
2006 - RFBLN2012090A1T

Abstract: RFBLN2012090AxT RFBLN LTCC X band
Text: . ELECTRICAL CHARACTERISTICS A0T A1T Central Frequency Balanced A2T 2450 ± 50 MHz Unbalanced


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PDF RFBLN20Phase RFBLN2012090A1T) RFBLN2012090A RFBLN2012090A1T RFBLN2012090AxT RFBLN LTCC X band
BTS 177

Abstract: 131S BTS current sense siemens Q67060-S6700-A4 Q67060-S6700-A3 Q67060-S6700-A2 GPTD5165 GPT05904 E3062A E3043
Text: 04.96 This Material Copyrighted By Its Respective Manufacturer öE35hOS 00Ö131S Ö1T SIEMENS BTS , tinning 3) max. 14.5 by dip tinning press burr max. 0.05 SMD T0220/5 Ordering code E3062A I T&R


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PDF 23SbDS T0220/5 Q67060-S6700-A2 GPTD5165 E3043 Q67060-S6700-A3 E3062A Q67060-S6700-A4 BTS 177 131S BTS current sense siemens Q67060-S6700-A4 Q67060-S6700-A3 Q67060-S6700-A2 GPTD5165 GPT05904 E3043
a1s smd

Abstract: smd code a12 smd code A1s ACT-S512K8
Text: (CSOJ), Aeroflex code# "F4" ■DESC SMD # 5962-95613 Released(F3,F4,P4), Pending(F16) ACT-S512K8 DIP , environment. A DESC Standard Military Drawing ( SMD ) number is pending. The ACT-S512K8 is manufactured in , Û1T I This Material Copyrighted By Its Respective Manufacturer S512K8-A 9/9/96 Plalnview NY (516 , MIL-STD-883 Compiiant/ SMD if applicable ——-—— Package Type & Size Surface Mount Packages


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PDF MlL-PRF-38534 ACT-S512K8 MIL-STD-883 471SL S512K8-A a1s smd smd code a12 smd code A1s
BDI35

Abstract: No abstract text available
Text: 7 OF 1 CUSTOMER DRAWING D ! 81 CD 8 B 1 ¡r-^'Wli^MMP •1T * '1 i1» ', "I''■t^i. '* 'tf '


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PDF BD5454 Q-N-290 QQ-N-290 208493-T. C28ES T2-29-92 I710S- BDI35
RFBLN2012090A1T

Abstract: a1t diode RFBLN LTCC X band
Text: . 5. 6. ELECTRICAL CHARACTERISTICS Spec \ RFBLN201209 A0T A1T Impedance A2T 2450 ±


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PDF RFBLN2012090AxT RFBLN201209 RFBLN2012090A1T) RFBLN2012090A RFBLN2012090A1T a1t diode RFBLN LTCC X band
1999 - smd code A1t

Abstract: A1t smd smd diode A1T SMD a1T Transistor A1T SMD diode a1t diode DIODE smd marking a1t 22 DIODE smd marking A1p DIODE smd marking A1t A1t SOT23
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION · Small plastic SMD package , technology, and encapsulated in the small SOT23 plastic SMD package. · High switching speed: max. 4 ns · , Kong; A1t = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In


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PDF M3D088 BAW56 BAW56 115002/00/03/pp12 smd code A1t A1t smd smd diode A1T SMD a1T Transistor A1T SMD diode a1t diode DIODE smd marking a1t 22 DIODE smd marking A1p DIODE smd marking A1t A1t SOT23
1997 - smd code A1t

Abstract: SMD a1T Transistor A1t smd A1t smd transistor smd diode A1T DIODE smd marking a1t 22 BAW56S MSA370 SMD A1t 44 A1T -14 diode
Text: PINNING · Small plastic SMD package PIN DESCRIPTION · High switching speed: max. 4 ns 1 , planar technology, and encapsulated in the small SMD SOT363 plastic package. 1 2 Top view 3 MGL159 MSA370 Marking code: A1t . Fig.1 Simplified outline (SOT363) and symbol. LIMITING


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PDF MBD128 BAW56S SCA55 117027/00/02/pp12 smd code A1t SMD a1T Transistor A1t smd A1t smd transistor smd diode A1T DIODE smd marking a1t 22 BAW56S MSA370 SMD A1t 44 A1T -14 diode
Not Available

Abstract: No abstract text available
Text: PART ND T~ 4.05 i_ ■1t = r r ! F i : S-1 i 1 V J1 - ! Ite l if - Ì il1 1


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PDF 28AU96 Z3N096 Z0MY97 130C97 ROO71707 R0071714 R0071791 R0071754 ZBAU96 2BAU96
Not Available

Abstract: No abstract text available
Text: ANODE B ANODE A COMMON CATHODE ANODE G ANODE F ^ ~ —1T T T5.08X4-20.32 T f- T ^ ' 1. ALL


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PDF MTN5131-61A MTN2131-61A 00006CH
2007 - A1t SOT23

Abstract: MO-229-WEED-4 A1t SOT-23 AD8639 AD8639ARZ-REEL7 MVAD AD8629 AD8638 AD8539 ad8638arjz-r2
Text: -8 R-8 RM-8 RM-8 RM-8 R-8 R-8 R-8 A1T A1T A1T A1Y A1Y A1Y A1Y A1Y A1Y Z =


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PDF AD8638/AD8639 AD8638 AD8639 5SOT-23RJ-5 8MSOPRM-88SOIC AD8638/AD8639/ OT-23 A1t SOT23 MO-229-WEED-4 A1t SOT-23 AD8639 AD8639ARZ-REEL7 MVAD AD8629 AD8638 AD8539 ad8638arjz-r2
316 bcg

Abstract: Amphenol Assembly instructions 227-1221-03
Text: 4/27/00 43271 CPM C SEE SHEET 1 S/X/ ùt 43666 CPM BRAID .62 REF. 320=fc .015 2 7 5±. 010


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PDF 24-JuI 24-Jui-96 RG-316 \MMCX\908-4I300 316 bcg Amphenol Assembly instructions 227-1221-03
1999 - manual gefran 2300

Abstract: gefran 500 controller manual gefran 2400 gefran 500 manual gefran 500 manuale gefran 2300 gefran 500 programmazione gefran 2400 controller manual gefran 500 programming manual gefran 1000
Text: assoluti Lo.S . Hi.S 0.999 sec. Se +32 in A1.t 0.999 min. Se +64 in A1.t · InP typ , Prot AL.1.t, AL.2.t, AL.3.t a1.t Tipo allarme 1 AL.x.t 0 1 2 3 4 5 6 7 , +32 in A1.t 0.999 min. Se +64 in A1.t 0.0 . 100.0% Fluido di raffreddamento C.MEd , .1.t, AL.2.t, AL.3.t a1.t Tipo allarme 1 a2.t Tipo allarme 2 a3.t AL.x.t Tipo


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PDF 80336B Ri10K; ITS90) 50mAca, 50/60Hz. manual gefran 2300 gefran 500 controller manual gefran 2400 gefran 500 manual gefran 500 manuale gefran 2300 gefran 500 programmazione gefran 2400 controller manual gefran 500 programming manual gefran 1000
LS38

Abstract: asm1n
Text: MA 0.4 ~ Ö1T 0.1 20 -0.4 irr 2.0 1.38 12.0 V mA UK mA mA mA _LS38_ For


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PDF 0O3O30O3ljpGD 9LS/54LS 9LS/74LS 125dF, LS38 asm1n
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