The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
HI1-0546-2 HI1-0546-2 ECAD Model Renesas Electronics Corporation $ Analog Overvoltage Protection 70VP-P $ No Channel Interaction During Overvoltage $ Guaranteed rON Matching $ Maximum Power Supply 44V $ Break-Before-Make Switching $ Analog Signal Range ±15V $ Access Time (Typical) 500ns $ Standby Power (Typical) 7.5mW $ Pb-Free Plus Anneal Available (RoHS Compliant)
HI9P0547-9Z HI9P0547-9Z ECAD Model Renesas Electronics Corporation $ Analog Overvoltage Protection 70VP-P $ No Channel Interaction During Overvoltage $ Guaranteed rON Matching $ Maximum Power Supply 44V $ Break-Before-Make Switching $ Analog Signal Range ±15V $ Access Time (Typical) 500ns $ Standby Power (Typical) 7.5mW $ Pb-Free Plus Anneal Available (RoHS Compliant)
HI9P0547-9Z96 HI9P0547-9Z96 ECAD Model Renesas Electronics Corporation $ Analog Overvoltage Protection 70VP-P $ No Channel Interaction During Overvoltage $ Guaranteed rON Matching $ Maximum Power Supply 44V $ Break-Before-Make Switching $ Analog Signal Range ±15V $ Access Time (Typical) 500ns $ Standby Power (Typical) 7.5mW $ Pb-Free Plus Anneal Available (RoHS Compliant)
HI3-0548-5Z HI3-0548-5Z ECAD Model Renesas Electronics Corporation $ Analog Overvoltage Protection 70VP-P $ No Channel Interaction During Overvoltage $ Guaranteed rON Matching $ Maximum Power Supply 44V $ Break-Before-Make Switching $ Analog Signal Range ±15V $ Access Time (Typical) 500ns $ Standby Power (Typical) 7.5mW $ Pb-Free Plus Anneal Available (RoHS Compliant)
HI1-0506A-2 HI1-0506A-2 ECAD Model Renesas Electronics Corporation $ Analog Overvoltage 70VP-P $ No Channel Interaction During Overvoltage $ Maximum Power Supply 44V $ Fail Safe with Power Loss (No Latch-Up) $ Break-Before-Make Switching $ Analog Signal Range ±15V $ Access Time 500ns $ Power Dissipation 7.5mW $ Pb-Free Available (RoHS Compliant)
HI1-0506A-8 HI1-0506A-8 ECAD Model Renesas Electronics Corporation $ Analog Overvoltage 70VP-P $ No Channel Interaction During Overvoltage $ Maximum Power Supply 44V $ Fail Safe with Power Loss (No Latch-Up) $ Break-Before-Make Switching $ Analog Signal Range ±15V $ Access Time 500ns $ Power Dissipation 7.5mW $ Pb-Free Available (RoHS Compliant)

A141039-500nS-B datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
A141039-500nS-B A141039-500nS-B ECAD Model RCD Components ACTIVE (DIGITAL) DELAY LINE Original PDF

A141039-500nS-B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
4MF-L010

Abstract: No abstract text available
Text: 3.0 @ 50 50 # CASE VRRM (VOLTS) 100 200 C BR 1F-D010 C B R 1F-D020 C B R 1F-D040 C BR 1F-D060 C B R 1F-D080 C B R 1F-D100 CBR 1F-D100S CBR 1F-D020S CBR 1F-D040S C BR 1F-D060S DIP SM D IP I CASEA CASEC C B R 1F-010 C B R 1F-020 C B R 1F-040 C B R 1F-060 C B R 1F-080 C B R 1F-100 C B R 2F-010 C B R 2F-020 C B R 2F-040 C B R 2F-060 C B R 2F-080 C B R 2F-100 C BR 3F-P010 C BR 3F-P020 CBR 3F-P040 C BR 3F-P060 C BR 3F-P0S0 C BR 3F-P100 400 600 800 1000 V f MAX @ IF 1.3V @ 1.0A 10nA 200ns 300ns 500ns


OCR Scan
PDF 1F-D010 1F-D020 1F-D040 1F-D060 1F-D080 1F-D100 1F-D100S 1F-D020S 1F-D040S 1F-D060S 4MF-L010
2CL25

Abstract: 2CL77 2CL70 2CL24 2CL91 SMD LL4001 1A7 Zener HVP320 BA151 2CL75
Text: Diodes Fast Switching Rectifiers LL4148 Vrm=100V;Ifsm=500mA 1N4148B/P(T/R)(T/ B ) Vr , ; Ifsm=1.0A MELF 1N4001 4007( B /P)(T/R)(T/ B ) Vr=50 1000V; Ifm=1.0A DO 41 1A7 Vr , DO 15 Fast Recovery Rectifier FR101 FR107 Vr=50 1000V; Ifm=1.0A; Trr=150/ 500nS DO 41 1N4931 1N4937 Vr=50 1000V; Ifm=1.0a; Trr=150/ 500nS DO 41 1N4941 1N4946 Vr=50 1000V; Ifm=1.0A; Trr=150/ 500nS DO 41 BA151 BA159 Vr=50 1000V; Ifm=1.0A; Trr=150/ 500nS DO 41 FR151 FR157


Original
PDF LL4148 500mA 1N4148B/P LL4001 1N4001 EM516 1N5391 1N5399 1N5400 1000Ifm 2CL25 2CL77 2CL70 2CL24 2CL91 SMD LL4001 1A7 Zener HVP320 BA151 2CL75
8MF-L080

Abstract: 8MF-L010
Text: C B R 6F-010 C B R 6F-020 C B R 6F-040 C B R 6F-060 C B R 6F-080 C B R 6F-100 C B R 6MF-L010 C B R 6MF-L020 C B R 6MF-L040 C B R 6MF-L060 C B R 6MF-L080 C B R 6MF-L100 C B R 8MF-L010 C B R 8MF-L020 C B R 8MF-L040 C B R 8MF-L060 C B R 8MF-L080 C B R 8MF-L100 CASE D 100 200 400 600 800 1000 C B R 4F-L010 C B R 4F-L020 C B R 4F-L040 C B R 4F-L060 C B R 4F-L080 C B R 4F-L100 C B R 4MF-L010 C B R 4MF-L020 C B R 4MF-L040 C B R 4MF-L060 C B R 4MF-L080 C B R 4MF-L100 vf max @ if 1


OCR Scan
PDF 6F-010 6F-020 6F-040 6F-060 6F-080 6F-100 6MF-L010 6MF-L020 6MF-L040 6MF-L060 8MF-L080 8MF-L010
Not Available

Abstract: No abstract text available
Text: CASE VRRM (VOLTS) 100 200 400 «00 800 1000 C B R 4F-L010 C B R 4F-L020 C B R 4F-L040 C B R 4F-L060 C B R 4F-L080 C B R 4F-L100 C B R 4MF-L010 C B R 4MF-L020 C B R 4MF-L040 C B R 4MF-L060 C B R 4MF-L080 C B R 4MF-L100 C BR 6F-010 C BR 6F-020 C B R 6F-040 C BR 6F-060 CBR 6F-080 C B R 6F-100 C ASED C A SE DM C A SE CM C BR 6MF-L010 C B R 6MF-L020 C B R 6MF-L040 C B R 6MF-L060 C B R 6MF-L080 C BR 6MF-L100 i i C BR 8MF-L010 CBR 8MF-L020 C B R 8MF-L040 C B R 8MF-L060 C B R 8MF-L080 C B R 8MF-L100 Vf


OCR Scan
PDF 4F-L010 4F-L020 4F-L040 4F-L060 4F-L080 4F-L100 4MF-L010 4MF-L020 4MF-L040 4MF-L060
Not Available

Abstract: No abstract text available
Text: (VOLTS) 100 C B R 4F-L010 CBR 4MF-L010 CBR 6F-010 CBR 6MF-L010 CBR 8MF-L010 200 C B R 4F-L020 CBR 4MF-L020 CBR 6F-020 C BR 6MF-L020 C B R 8MF-L020 400 C B R 4F-L040 CBR 4MF-L040 CBR 6F-040 C BR 6MF-L040 C B R 8MF-L040 600 C B R 4F-L060 CBR 4MF-L060 CBR 6F-060 C BR 6MF-L060 C B R 8MF-L060 800 C B R 4F-L080 CBR 4MF-L080 C B R 6F-080 C BR 6MF-L080 C B R 8MF-L080 1000 C B R 4F-L100 C B R 4MF-L100 C B R 6F-100 C BR


OCR Scan
PDF 4F-L010 4MF-L010 6F-010 6MF-L010 8MF-L010 4F-L020 4MF-L020 6F-020 6MF-L020 8MF-L020
Not Available

Abstract: No abstract text available
Text: High Voltage Stacks 688-10 to 688-25 & 688-1 OR to 688-25R I D m_ _ Dim. A B C D E Inches , Add suffix R to denote Fast Recovery version. For example, for recovery time, trr = 500nS ; order 688-1 , aracteristics · M IL -P R F -1 9 5 0 0 S im ilarity · S n /P b term in ation s E lectrical C h a ra c te ris , 10kV VFM 17V © 0.4A* I RM 2uA I RM 100uA trr 500nS 6 8 8 -1 2.R 0.50A 20A 12kV 20V © 0.4A* 2uA 100uA 500nS 6 8 8 -1 5.R 0.40A 20A 15kV 25V © 0.4A* 2uA 100uA 500nS 6 8 8 -1 8.R 0.35A 20A 18kV 30V © 0.4A


OCR Scan
PDF 688-25R 500nS;
UT63M143

Abstract: MIL-HDBK-1553A MIL-STD-1553 voltage MIL-STD-1553 COUPLED RECEIVER trapezoidal pulse zero crossing three signals STD-1553 MIL-STD-1553/MIL-STD-1553A pic zero cross detect
Text: 3.3V MIL-STD-1553A/ B Bus Transceiver 1.0 Cross Reference of Affected Devices Table 1: Cross Reference , RHA Levels UT63M143 MIL-STD-1553 Transceiver JB04 Rev A & B 5962-07242 01 & 02 R, F, G, &H UT63M143 MIL-STD-1553 Transceiver JB05 Rev B TBD n/a non-RHA * PIC = , VTH minimum voltage response parameters on the UT63M143 MIL-STD-1553A/ B Bus Transceiver. This , are 200ns +20ns with 500ns ideal zero crossings. Given this input waveform, the UT63M143 guarantees


Original
PDF UT63M143 MIL-STD-1553A/B UT63M143 MIL-STD-1553 200ns, MIL-HDBK-1553A MIL-STD-1553 voltage COUPLED RECEIVER trapezoidal pulse zero crossing three signals STD-1553 MIL-STD-1553/MIL-STD-1553A pic zero cross detect
P020

Abstract: No abstract text available
Text: ) # C A SE DIP SM D IP I CASEA CASEC C B R 1F-010 C B R 2F-010 C BR 2F-020 C B R 2F-040 C BR 2F-060 C B R 2F-080 C BR 2F-100 CBR 3F-P010 C B R 3F-P020 C B R 3F-P040 C B R 3F-P060 C B R 3F-P080 C B R 3F-P100 ! C B R 1F-020 C B R 1F-040 C BR 1F-060 C B R 1F-080 C BR 1F-100 VRRM (VOLTS) 100 200 C B R 1F-D010 C B R 1F-D020 C B R 1F-D040 C BR 1F-D060 C B R 1F-D080 C B R 1F-D100 CBR 1F-D100S C BR 1F-D020S C B R 1F-D040S CBR 1F-D060S 400 600 800 1000 V f M AX @ IF Ir M A X @ VRRM 1,3V @


OCR Scan
PDF 1F-010 2F-010 2F-020 2F-040 2F-060 2F-080 2F-100 3F-P010 3F-P020 3F-P040 P020
688-10R

Abstract: 688-12R 688-15R 688-18R 688-20R 688-25R 12KV
Text: High Voltage Stacks 688-10 to 688-25 & 688-10R to 688-25R I D I r~r ï"! l-E —I -c- r ■N r J Dim. Inches Millimeter A 1.140 MAX. 28.96 MAX. B 2.985-3.015 75.82-76.58 C 2.110-2.140 53.59-54.36 D .740-.770 18.80-19.56 E .720-.750 18.29-19.05 Add suffix R to denote Fast Recovery version. For example, for recovery time, trr = 500nS ; order 688-1 OR. MARKING: Cathode Positive , . recovery time 10, 10, 5mA (R types) t|T 500nS 500nS 500nS 500nS 500nS 500nS ♦Pulse test: Pulse width 300


OCR Scan
PDF 688-10R 688-25R 500nS; 688-12R 688-15R 688-18R 688-20R 688-25R 12KV
Not Available

Abstract: No abstract text available
Text: High Voltage Stacks 688-10 to 688-25 & 688-1 OR to 688-25R I D Dim. A B C D E Inches 1.140 MAX , version. For example, for recovery time, trr = 500nS ; order 688-1 OR. Working Peak Reverse Voltage 10kV , © 100°C, at Vrrm 6 8 8-10.R 0.60A IFSM 20A Vrm 10kV vfm 17V © 0.4A* RM 2uA I RM 100uA trr 500nS o 6 8 8-12.R 0.50 A 20A 12kV 20V O 0.4A* 2uA 100uA 500nS 6 8 8 -1 5.R 0.40A 20A 15kV 25V O 0.4A* 2uA 100uA 500nS 6 8 8 -1 8.R 0.35A 20A 18kV 30V © 0.4A* 2uA 100uA 500nS 688-20.R 688-25.R 0.30A


OCR Scan
PDF 688-25R 500nS; 25kVrage
Not Available

Abstract: No abstract text available
Text: Dim. 1 A B C D E D 1 r? i- -A M illim e te r 1.140 MAX. 2.985-3.015 , suffix R to denote Fast Recovery version. For example, for recovery time, tr r = 500nS ; order 688-1 OR , ris tic s 0 .3 0 A 0 .2 0 A • M IL -P R F -1 9 5 0 0 S im ila rity • S n /P b te rm in a , types) trr 500nS 6 8 8 -1 2.R 0.50A 20A 12kV 20 V @ 0.4A* 2uA 100uA 500nS 6 8 8 -1 5 , 500nS 500nS 68 8-2 0. R 688-25.R 0.30A 0.20A 20A 20A 20kV 25kV 34V @ 0.4A* 42V @ 0.4A


OCR Scan
PDF 500nS; 688-10R
2005 - S29GL064

Abstract: spansion S29GL064 S29GL064N how to hardware protect S29GL064N EN29GL064 220ch
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/ B vs SPANSION Flash , implement a system design from SPANSION S29GL064N Flash to Eon EN29GL064H/L/T/ B Flash. 2. GENERAL , . Features voltage range Pin to Pin Page Access time EN29GL064H/L/T/ B S29GL064N 2.7 ~ 3.6 2.7 , 8 x 8K Byte boot sectors + 8 x 8K Byte boot sectors + 127 127 x 64K Byte sector @ T/ B x 64K Byte sector @ T/ B Yes Yes 256 Byte 256 Byte Yes Yes Yes Yes Yes Yes Yes Yes 100K


Original
PDF EN29GL064H/L/T/B S29GL064N S29GL064N EN29GL064H/L/T/B T500ns 500ns S29GL064 spansion S29GL064 how to hardware protect S29GL064N EN29GL064 220ch
Not Available

Abstract: No abstract text available
Text: (800V) 500ns 500ns trr (1000V) n a m B CPR2F-010 500ns 500ns □□â


OCR Scan
PDF DO-15 1N5185 1N5415 CR2F-010 1N5186 1N5416 CPR2F-020 CR2F-020 1N5187 1N5417
SDM250

Abstract: D1ZM1-100 SDM-70 SDM-200 140-A-126-SDM/06
Text: RHOMBUS INDUSTRIES INC MSE » TTöM'iSG 00G05M7 b R H B ' f - ^ -73 SCHOTTKY TTL , in inches (mm) Military Part Height for DTZM1-XXXM: < 500ns .185 Max. > 500ns .300 Max. DTZMl-iS , . Total Delay in nanoseconds (ns) - G ra d e -Military above 500ns use M , dimensions in inches (mm) Military Part Height for FSDM-XXXM: < 500ns .185 Max. > 500ns .300 Max , -PIN Package See Page 10 for Pin-Outs and schematic diagrams. Military above 500ns use DTZM3 Series, Page 16


OCR Scan
PDF 00G05M7 14-PIN 500ns DTZM1-30 D1ZM1-35 DTZM1-50 DTZM1-60 DTZM1-75 D1ZM1-100 SDM250 SDM-70 SDM-200 140-A-126-SDM/06
2005 - EN29LV800C

Abstract: EN29LV800B
Text: . 1 Rev. B , Issue Date: 2009/ 04/09 ©2005 Eon Silicon Solution Inc. www.ession.com Eon , changes in technical specifications. 48-pin 12mm x 20mm TSOP 48 ball 6mm x 8mm TFBGA 2 Rev. B , modifications due to changes in technical specifications. 3 Rev. B , Issue Date: 2009/ 04/09 ©2005 Eon , None* 10µs 500ns 500ns 50ns 50ns None* 0ns None* 50ns 20µs 20µs 500ns 500ns 5.2 ERASE AND PROGRAM PERFORMANCE The erase time is improved greatly in EN29LV800C


Original
PDF EN29LV800B EN29LV800C EN29LV800C
MX23L2000TI

Abstract: MX23L2000
Text: MX23L2000TI-15 150ns MX23L2000TI-20 200ns MX23L2000TI-50 500ns Package 32 pin SOP , 23L2000-20 MIN. MAX. 200ns 200ns 200ns 100ns 0ns 20ns 23L2000-50 MIN. MAX. 500ns 500ns 500ns , max. .825 max. B 1.00 [REF] .039 [REF] C 1.27 [TP] .050 [TP] D .40 [Typ , condition. E D C L B 32-PIN PLASTIC TSOP ITEM MILLIMETERS INCHES A 20.0±.20 .078±.006 B 18.40±.10 .724±.004 C 8.20 max. .323 max. D .15 [Typ.] .006 [Typ


Original
PDF MX23L2000 150ns MX23L2000MI-15 MX23L2000MI-20 200ns MX23L2000TI-15 MX23L2000TI-20 MX23L2000TI MX23L2000
MIL-STD-1553 voltage

Abstract: MIL-STD-1553 MIL-HDBK-1553A UT63M147 NS2500 1553 SUmmit mil-std 1553 MILSTD-1553
Text: 5V MIL-STD-1553A/ B Bus Transceiver 1.0 Cross Reference of Affected Devices Table 1: Cross Reference , minimum voltage response parameters on the UT63M147 MIL-STD-1553A/ B Bus Transceiver. This advisory is , 500ns ideal zero crossings. Given this input waveform, the UT63M147 guarantees tRXDD of no more than , 3.0V, and whose rise and fall times are 200ns +20ns with 500ns ideal zero crossings. Given this input , when receiving minimum MIL-STD-1553 amplitude, 500ns trapezoidal pulses with 200ns rise and fall times


Original
PDF UT63M147 MIL-STD-1553A/B UT63M147 MIL-STD-1553 200ns, MIL-STD-1553 voltage MIL-HDBK-1553A NS2500 1553 SUmmit mil-std 1553 MILSTD-1553
2005 - 2200H

Abstract: EN29GL064 M29W640 M29W640GT M29W640GH M29W640GL
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/ B vs NUMONYX Flash M29W640GH/L/T/ B This Application Note may be revised by subsequent versions or modifications due to , how to implement a system design from NUMONYX M29W640GH/L/T/ B Flash to Eon EN29GL064H/L/T/ B Flash , endurance cycle Package EN29GL064H/L/T/ B M29W640GH/L/T/ B 2.7 ~ 3.6 2.7 ~ 3.6 Compatible (for 48 , 64K Byte @H / L 8 x 8K Byte boot sectors + 8 x 8K Byte boot sectors + 127 x 64K Byte sector @ T/ B


Original
PDF EN29GL064H/L/T/B M29W640GH/L/T/B M29W640GH/L/T/B EN29GL064H/L/T/B 500ns 200ns 2200H EN29GL064 M29W640 M29W640GT M29W640GH M29W640GL
Not Available

Abstract: No abstract text available
Text: MX23L2000TI-20 200ns 32 pin TSOP (Industrial) (Industrial) MX23L2000TI-50 500ns 32 pin TSOP , . MAX. 150ns - 200ns - 500ns - Address Access Time tAA - 150ns - 200ns - 500ns Chip Enable Access Time tACE - 150ns - 200ns - 500ns , /N:PM0337 REV. 2.3, NOV. 05,1998 2 U ^ B p i WWW • Umar MX23L2000 AC Test Conditions , PAGE DATE 2.3 AC CHARACTERISTICS:^ add 500ns speed grade. AC TEST CHARACTERISTICS: The


OCR Scan
PDF MX23L2000 150ns MX23L2000MI-15 MX23L2000MI-20 200ns MX23L2000TI-15 MX23L2000TI-20
NJM2742

Abstract: NJM2742D NJM2742M NJM2742RB1 NJM2742V
Text: .A OUTPUT 2.A -INPUT 3.A +INPUT 4.V5.B +INPUT 6. B -INPUT 7. B OUTPUT 8.V+ -1- NJM2742 (Ta , [ 500ns /div] 500ns div] ns/ -6- [V] 10.0 5.0 10.0 2.5 7.5 0.0 [V] [V , 135 [dB] dB] 40 50 [deg] deg] 225 50 [deg] deg] + 0.0 500ns div] ns/ [ 500ns /div] Ver.2004-09-14 NJM2742 Vin=0V,Ta=25 5.0 V+/V-=±15V 4 , =10pF -10.0 -4.0 500ns div] ns/ [ 500ns /div] Ver.2004-09-14 -6.0 2.0 -2.0 [V] + +


Original
PDF NJM2742 NJM2742M NJM2742V NJM2742D NJM2742RB1 250kHz 1000pF NJM2742 NJM2742D NJM2742M NJM2742RB1 NJM2742V
2005 - MX29GL640E

Abstract: MX29GL640EB MX29GL640EL MX29GL640ET 00C2H 220ch 2201H mx29gl640
Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/ B vs MXIC Flash MX29GL640E/H/L/T/ B This Application Note may be revised by subsequent versions or modifications due to , how to implement a system design from MXIC MX29GL640E/H/L/T/ B Flash to Eon EN29GL064H/L/T/ B Flash , cycle Package endurance EN29GL064H/L/T/ B MX29GL640E/H/L/T/ B 2.7 ~ 3.6 2.7 ~ 3.6 Compatible , Byte @H / L 8 x 8K Byte boot sectors + 8 x 8K Byte boot sectors + 127 127 x 64K Byte sector @ T/ B x


Original
PDF EN29GL064H/L/T/B MX29GL640E/H/L/T/B MX29GL640E/H/L/T/B EN29GL064H/L/T/B 500us 500ns 200ns MX29GL640E MX29GL640EB MX29GL640EL MX29GL640ET 00C2H 220ch 2201H mx29gl640
2004 - CR5F-010

Abstract: 1N4947 1N4946 1N4944 1N4942 1N4937 1N4936 1N4935 1N4934 1N4933
Text: trr (800V) 250ns 300ns 300ns 500ns trr (1000V) trr (1200V) 500ns 500ns 500ns 500ns 500ns * Also available in DO-41SP Case (0.6mm lead diameter) with Radial Tape and Reel (DO , 150ns trr (600V) 250ns 250ns 400ns 400ns trr (800V) 500ns 500ns trr (1000V) 500ns 500ns (6-December 2004) w w w. c e n t r a l s e m i . c o m Rectifiers, Fast Recovery , 250ns 250ns trr (800V) 400ns 500ns 500ns 500ns trr (1000V) 500ns 500ns


Original
PDF DO-41* 1N4933 1N4934 CPR1F-010 CR1F-010 1N4935 1N4942 1N5615 CPR1F-020 CR5F-010 1N4947 1N4946 1N4944 1N4942 1N4937 1N4936 1N4935 1N4934 1N4933
M9S08

Abstract: M68EVB08GB60 9S08GB60 2x16 bit lcd pin diagram HCS08 Application Notes 485EN HCS08 lcd lcd monitor block diagram and troubleshooting MC9S08GB60 HCS08 blink LED
Text: access time of 500ns . Status Byte Data bits D0 ­ D3 0 13 M 6 8 E V B 9 0 8 G B 6 0 0 1 / 1 2 , Industrial Lane · Garland, TX 75041 Email: Sales@axman.com Web: http://www.axman.com ! M 6 8 E V B 9 0 8 G B 6 0 0 1 / 1 2 / 0 5 CONTENTS CAUTIONARY NOTES , .20 2 M 6 8 E V B 9 0 8 G B 6 0 0 1 / 1 2 / 0 5 Cautionary Notes 1) Electrostatic Discharge , tested and meets with requirements of CE and the FCC as a CLASS A product. b ) This product is designed


Original
PDF M68EVB908GB60 MC9S08GB60 M9S08 M68EVB08GB60 9S08GB60 2x16 bit lcd pin diagram HCS08 Application Notes 485EN HCS08 lcd lcd monitor block diagram and troubleshooting MC9S08GB60 HCS08 blink LED
lcd monitor block diagram and troubleshooting

Abstract: HCS08 c code example TIMER interrupt HCS08 lcd lcd display 2x16 software command hcs08 HCS08 blink LED pin diagram of lcd display 2x16 M68EVB08GB60 GT60UM 9s08gb60
Text: access time of 500ns . Status Byte Data bits D0 ­ D3 0 13 M 6 8 E V B 9 0 8 G B 6 0 0 4 / 2 9 , Lane · Garland, TX 75041 Email: Sales@axman.com Web: http://www.axman.com ! M 6 8 E V B 9 0 8 G B , .20 2 M 6 8 E V B 9 0 8 G B 6 0 0 4 / 2 9 / 0 3 Cautionary Notes 1) Electrostatic Discharge , tested and meets with requirements of CE and the FCC as a CLASS A product. b ) This product is designed , between the option pads. 3 M 6 8 E V B 9 0 8 G B 6 0 0 4 / 2 9 / 0 3 FEATURES The


Original
PDF M68EVB908GB60 M9S08GB60 lcd monitor block diagram and troubleshooting HCS08 c code example TIMER interrupt HCS08 lcd lcd display 2x16 software command hcs08 HCS08 blink LED pin diagram of lcd display 2x16 M68EVB08GB60 GT60UM 9s08gb60
MT32018

Abstract: MT32028 Micro Circuit Engineering T3G27 "Micro Circuit Engineering" generation circuit of manchester DALE crystal 16Mhz 1553B manchester encoder iran
Text: ENCODER/DECODER ACTUAL SIZE SIMPLIFIED BLOCK SCHEMATIC TERMINAL ADDRESS PARITY A B C 0 E inn AOORESS , signal VAL CMD WORD THIS RT becomes valid for 500ns if a command sync has been detected along with valid , signal VALID BC5T CMD WORD becomes valid for 500ns . When VALID CMD WORD THIS RT or WD SC5T CMD WORD , same period of 500ns . The I/O pin (THIS RT ADDR IP) is being continuously oompared with the hard-wired , bus address (THIS RT ADOR). valid tor 500ns M a command/status sync has been detected along with


OCR Scan
PDF MIL-STD-1553B MT32018 MT32028 16MHz i0684 29943S 1267/M MT32028 Micro Circuit Engineering T3G27 "Micro Circuit Engineering" generation circuit of manchester DALE crystal 16Mhz 1553B manchester encoder iran
Supplyframe Tracking Pixel