The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
LMV393QDRG4Q1 LMV393QDRG4Q1 ECAD Model Texas Instruments DUAL COMPARATOR, 9000uV OFFSET-MAX, 450ns RESPONSE TIME, PDSO8, GREEN, PLASTIC, MS-012AA, SOIC-8
8200504YX 8200504YX ECAD Model Rochester Electronics LLC UVPROM, 4KX8, 450ns, NMOS,
8200504ZX 8200504ZX ECAD Model Rochester Electronics LLC UVPROM, 4KX8, 450ns, NMOS,
8200503YX 8200503YX ECAD Model Rochester Electronics LLC UVPROM, 4KX8, 450ns, NMOS,
8001204JX 8001204JX ECAD Model Rochester Electronics LLC UVPROM, 4KX8, 450ns, NMOS,
8200503YA 8200503YA ECAD Model Rochester Electronics LLC UVPROM, 4KX8, 450ns, NMOS

A1405AER-450nS-B datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
A1405AER-450nS-B A1405AER-450nS-B ECAD Model RCD Components ACTIVE (DIGITAL) DELAY LINE Original PDF

A1405AER-450nS-B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2114 static ram

Abstract: 2114-UCB L2114-2CB RAM 2114 L2114-3CE semi 2114ucb 2114-2CB L2114-2CE EMM Semi L2114-3CB
Text: -pin Cerdip 0° C to 70° C 2114-UCA 450ns 525mw 18-pin Ceramic 0° C to 70° C 2114-UCB 450ns 525mw 18-pin Plastic 0° C to 70° C 2114-UCE 450ns 525mw 18-pin Cerdip 0° C to 70° C L2114-UCA 450ns 315mw 18-pin Ceramic 0° C to 70° C L2114-UCB 450ns 315mw 18-pin Plastic 0° C to 70° C L2114-UCE 450ns 315mw 18-pin Cerdip 0° C to 70° C TYPICAL OUTLINE DRAWING ~T B J -I i- 1 l m -SEATING PLANE PACKAGING DIMENSIONS " b " plastic package "a" ceramic package "e" cerdip package dim. millimeters inches


OCR Scan
PDF 1024x4 18-pin 2114 static ram 2114-UCB L2114-2CB RAM 2114 L2114-3CE semi 2114ucb 2114-2CB L2114-2CE EMM Semi L2114-3CB
Not Available

Abstract: No abstract text available
Text: MICROPROCESSOR & MEMORY CIRCUITS (INCLUDES PERIPHERALS) NTE2056 16-Lead DIP, See Diag. 249 8- B , A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 , , 4K Dynamic RAM (DRAM), 200ns v Bß r i ^ A9 Q 0 jjj £5 3 A11 A° Q A1 B A5 A2 B c s ra A3 O V dd 0 N.C. J p U T ^ 0 0 0 A0 B A1 Q A2 S . GND B , Q Q 0 Din 3 WRITE 3 A8 A9 R A S ^Í i/oí A0 Q A2 Q A B 1 VSS CSS d


OCR Scan
PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead
0447-0500-09

Abstract: 0447-0070 delay line 400ns DTSHW-3.8N
Text: 350NS 400NS 450NS 500NS 5NS 10NS 20NS 30NS 40NS 50NS 60NS 70NS 80NS 90NS 100NS 8N S 8N S 8N S 8N S , 200NS 250NS 300NS 350NS 400NS 450NS 5Ô0NS 8N S 8N S 8N S 8N S 8N S 8N S 8N S 8N S 8N S 8NS 1 , Measured with no loads on taps. Specifications Subject To Change Without Notice 12 B E L FU SE INC./198


OCR Scan
PDF 13S14E3 D000S05 Co-08 100NS 125NS 150NS 175NS 200NS 250NS 300NS 0447-0500-09 0447-0070 delay line 400ns DTSHW-3.8N
CU20029ECPB-W1J

Abstract: VFD ISE Electronics CU20029ECPB ISE Electronics VFD ISE CG57103
Text: . These operations are performed during writing/reading data. Display ON/OFF Control 0 0 0 0 0 0 1 D C B l*tCYC Sets all display ON/OFF(D), cursor ON/OFF(C), cursor blink of character position( B ). Cursor or , character to the right. 7.5 Display ON/OFF DB7 DB6 DB5 DB4 DB3 DB2 DB1 DBO 0 0 0 0 1 D C B 08H to OFH RS , reduce a power Consumption The C bit turns the cursor on or off. C=l: Cursor on C=0:Cursor off The B bit enables blinking of the character the cursor coincides with. B=l: Blinking on B =0:Blinking off Blinking is


OCR Scan
PDF CU20029ECPB DS-758-0000-03 CU20029ECPB-W1J VFD ISE Electronics ISE Electronics VFD ISE CG57103
Not Available

Abstract: No abstract text available
Text: 70NS 8NS 8N S 8N S 8NS 8NS 8N S 8NS 8N S 400NS 450NS 500NS 0447-0200-09 0447-0250-09 , 200NS 250NS 300NS 350NS 400NS 450NS 500NS 8NS 8NS 2,3 8NS 8NS 8NS 8N S 8NS 8N S , A447. 12 B E L FUSE INC./198 VAN V O R S T S T R E E T / J E R S E Y CITY, NJ 07302/(201) 432-0463


OCR Scan
PDF 20MATYP 045REF. 125NS 150NS 175NS 200NS 250NS 300NS 350NS 400NS
ic 2114

Abstract: 2114 static ram memory ic 2114 pin out
Text: T R U T H T A B LE CS DATA IN P U T / W x L IN E S N r^ -i IN P U T DATA C O NTROL , 1024word x 4 b its ta tic N-MOS Random Access Memories. These fully static memory cells require no , Level Input Low Level SYMBOL Vcc VlH VlL ( T am b 0 C to 70° C) NOM 50 — — MIN , T otw V V T amb = 25°C T amb = 0°C to 70°C T amb - 25° C T a m b = 0°Cto70°C T a m b = 25°C T a m b = 0°C to 70°C T amb - 25°C T amb = 0°Cto70°C (CO NDITIONS — Full O


OCR Scan
PDF 1024x4 18-pin ic 2114 2114 static ram memory ic 2114 pin out
UT63M143

Abstract: MIL-HDBK-1553A MIL-STD-1553 voltage MIL-STD-1553 COUPLED RECEIVER trapezoidal pulse zero crossing three signals STD-1553 MIL-STD-1553/MIL-STD-1553A pic zero cross detect
Text: 3.3V MIL-STD-1553A/ B Bus Transceiver 1.0 Cross Reference of Affected Devices Table 1: Cross Reference , RHA Levels UT63M143 MIL-STD-1553 Transceiver JB04 Rev A & B 5962-07242 01 & 02 R, F, G, &H UT63M143 MIL-STD-1553 Transceiver JB05 Rev B TBD n/a non-RHA * PIC = , VTH minimum voltage response parameters on the UT63M143 MIL-STD-1553A/ B Bus Transceiver. This , zero crossings. Given this input waveform, the UT63M143 guarantees tRCVPD of no more than 450ns . 0


Original
PDF UT63M143 MIL-STD-1553A/B UT63M143 MIL-STD-1553 200ns, MIL-HDBK-1553A MIL-STD-1553 voltage COUPLED RECEIVER trapezoidal pulse zero crossing three signals STD-1553 MIL-STD-1553/MIL-STD-1553A pic zero cross detect
a5 gnd

Abstract: NTE4164 NTE2164 NTE2117 BB 298 64k nmos static ram NTE2102 64k dynamic RAM NTE2114 NTE2128
Text: CAS we h H°out RÄsjS H CS ao q 0 a3 a2 Q 0 a4 a1 B Q a5 VDDQ JVcc NTE2107 22-Lead DI P, See , 0 AS A10 0 A7 A11 2 A6 CS 0 VDD Din Q CE 3out 0 N.C. AO B A5 A1 g Q A4 A2 B , 3 CS 0 Q I/O 4 GND 0 WE Vbb 0Vss Din 0 CSS WRITE 0dout R53 0 a6 ao b a3 a2 i 0 , 0 WE A3 0 OE A2 0 A10 A1 0 CS AO B I/O 8 1/01 B I/O 7 I/O 2 0 I/O 6 I/O 3 0 I/O , AO 0VCC A1 B A6 A2 0 A7 A3 0 A8 A4 0 A9 A5 0 A10 Dout R B A11 B Din GND 0 cs


OCR Scan
PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2164 NTE2117 BB 298 64k nmos static ram 64k dynamic RAM NTE2114 NTE2128
250ns TTL Delay

Abstract: No abstract text available
Text: b e l/ defining a degree of excellence DIGITAL DELAY LINE SERIES A447 LOW POWER MODULE 20 MA TYP 5 TAP/FIXED DELAY SPACES @ .2 0 - "t— TECHNICAL INFORMATION TEST CONDITIONS Pulse Vbltage Rise Time Pulse Width Pulse Period Supply Current, Ic c l 3.2 Volts 3.0 Nsec (10°/o , CHARACTERISTICS A447-0025-09 450NS 90NS 8NS A447-0500-09 500NS 100NS 8NS .325 8NS , A447-0090-08 90NS 8NS A447-0450-08 450NS 8NS A447-0100-08 100NS 8NS A447


OCR Scan
PDF /o-90Â Cu447-0040-08 A447-0200-08 200NS A447-0050-08 A447-0250-08 250NS A447-0060-08 A447-0300-08 300NS 250ns TTL Delay
1997 - B2716

Abstract: FDIP24W M2716 m2716 dip M2716* eprom
Text: M2716 NMOS 16K (2K x 8) UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: ­ M2716-1 is 350ns ­ M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM MODES THREE-STATE OUTPUT with TIED-ORCAPABILITY EXTENDED TEMPERATURE RANGE PROGRAMMING VOLTAGE: 25V DESCRIPTION , you. Example: M2716 Speed and VCC Tolerance -1 350ns, 5V ±10% blank 450ns , 5V ±5% F


Original
PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns B2716 FDIP24W m2716 dip M2716* eprom
TDP20010

Abstract: No abstract text available
Text: 18ns±2.0ns 20ns±2.0ns 20ns±2.0ns 30.0ns Max 150ns±7.5ns 25ns±4.0ns 30ns±4.0ns 30ns±4.0ns 45.0ns , 30ns±4.0ns 30ns±4.0ns 45.0ns Max (*) For Pins 2-7, when Pins 3,4,5,6 is unconnected. TDP15130 150ns±7.5ns 25ns±4.0ns 30ns±4.0ns 30ns±4.0ns 45.0ns Max (*) For Pins 2-7, when Pins 3,4,5,6 is , Guarantee(*) DC Resistance (*) 3.0ns Max 5.0ns Max 8.0ns Max 24.0ns Max 30.0ns Max 45.0ns Max


Original
PDF TDP10035 TDP20035 TDP30035 094005E/09 TDP20010
1996 - B2716

Abstract: B-2716
Text: M2716 NMOS 16K (2K x 8) UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: ­ M2716-1 is 350ns ­ M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM MODES THREE-STATE OUTPUT with TIED-ORCAPABILITY EXTENDED TEMPERATURE RANGE PROGRAMMING VOLTAGE: 25V DESCRIPTION The M2716 , you. Example: M2716 -1 F 1 Speed and VCC Tolerance -1 350ns, 5V ±10% blank 450ns , 5V ±5% Package F


Original
PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns B2716 B-2716
1999 - M275

Abstract: M27W801 M27W512 M27W402 M27W401 M27W201 M27W102 M27W101 M27C PLCC32
Text: M27C320 M27C322 Description 16Kb (x8), 350 - 450ns , NMOS 32Kb (x8), 200 - 450ns , NMOS 64Kb (x8), 180 - 450ns , NMOS 64Kb (x8), 100 - 200ns 128Kb (x8), 200 - 450ns , NMOS 256Kb (x8), 170 - 400ns , RA2347 Av. Mariano Otero PISO 5, Of. " B " Col. Verde Valle Tel. (52-3) 647 6081 Fax: (52-3) 647 5231


Original
PDF D-90449 FLNEWOTP/0699 M275 M27W801 M27W512 M27W402 M27W401 M27W201 M27W102 M27W101 M27C PLCC32
HO-22

Abstract: A12C SMM23100C HO-22 c
Text: SMM23100C CMOS 1M-BIT MASK ROM •Low Supply Current •Access Time 450ns •131,072 Words x 8 Bits Asynchronous ■DESCRIPTION The SMM23100C is a 131,072 words x 8 bits mask programmable asynchronous CMOS readonly memory and operates on a single power source. Both the input, and output ports are , . 450ns (normal mode) 100ns (nibble mode) • Low supply , of address pins AO and A1. The combination of one normal mode cycle (= 450ns ) with three nibble mode


OCR Scan
PDF SMM23100C 450ns SMM23100C 190ns. 28-pin HO-22 A12C HO-22 c
ac 1501-50

Abstract: DA10 IM7141 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10
Text: IM 7141M 4096 Bit (4096x1) NMOS Static RAM FEATURES • Cycle Time Equal to Access Time • Completely Static-No Clock Required • Separate Data input and Output • TTL Compatible Inputs and Outputs • 883A Class B Processing Available • Military Temperature Operation: -55°C to+ 125°C â , over a 5V ± 10% range. The worst-case access time is 450ns with speeds of 300ns (- 3) and 200ns (-2 , PART NUMBER ACCESS TIME PACKAGE IM7141-2MJN 200ns CERDIP , IM7141-3MJN 300ns CERDIP IM7141MJN 450ns


OCR Scan
PDF 7141M 4096x1) -200ns -300ns 495mW IM7141 4096-bit IM7141-2M IM7141-3M IM7141M ac 1501-50 DA10 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10
Not Available

Abstract: No abstract text available
Text: N T E ELECTRONICS INC S2E » b M 3 1 H S ^ O D D S T G O 31Ì * N T E (Includes Peripherals) NMOS, 32K EPROM, 300ns 24-Lead DIP, See Diag. 300 NMOS, 8K EPROM, UV, 450ns NMOS, 32K EPROM, UV, 200ns 24-Lead DIP, See Diag. 300 NMOS, 64K EPROM, 28-Lead DIP, See Dlag. 518 200ns NMOS, 14-Lead DIP, See Diag. 249 1400 Bit Serial EAROM, 200ns Vm (N.C.) N.C. Floppy Disk Read Amplifier System 24-Lead DIP, See Dlag. 300 T -M U - 0 3 NMOS, 16K EPROM, UV, 450ns 24


OCR Scan
PDF 300ns 24-Lead 450ns 200ns 28-Lead 14-Lead
1998 - B2716

Abstract: m2716 FDIP24W M271616
Text: M2716 16 Kbit (2Kb x 8) NMOS UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: ­ M2716-1 is 350ns ­ M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM MODES THREE-STATE OUTPUT with TIED-OR-CAPABILITY EXTENDED TEMPERATURE RANGE PROGRAMMING VOLTAGE: 25V DESCRIPTION , Tolerance -1 350ns, 5V±10% blank 450ns , 5V±5% Package F FDIP24W Temp. Range 1 0 to 70 °C


Original
PDF M2716 525mW 132mW M2716-1 350ns M2716 450ns AI00784B B2716 FDIP24W M271616
delay line 400ns

Abstract: A447-0100-09 a447-0150 A447-0150-09 100NS A447-0050-09 A447-0025-09 A447 25NS 050009
Text: -0400-09 400NS 80NS 8NS A447-0450-09 450NS 90NS 8NS A447-0500-09 500NS 100NS 8NS .12 MIN -.018 REF. i 18 MAX , -0450-08 450NS 8NS A447-0100-08 100NS 8NS A447-0500-08 500NS 8NS 1 Delays measured at 1.5 Volt level on Leading


OCR Scan
PDF /o-90Â A447-0125-08 125NS A447-0020-08 A447-0150-08 150NS A447-0030-08 A447-0175-08 175NS A447-0040-08 delay line 400ns A447-0100-09 a447-0150 A447-0150-09 100NS A447-0050-09 A447-0025-09 A447 25NS 050009
1997 - TSOP40 Flash

Abstract: m48z32y M27128A M2716 M27256 M93C86 M27512 M2764A M27V101 M27V256
Text: Kb (x8), 350 - 450ns , NMOS 32 Kb (x8), 200 - 450ns , NMOS 64 Kb (x8), 180 - 450ns , NMOS 128 Kb (x8), 200 - 450ns , NMOS 256 Kb (x8), 170 - 400ns, NMOS 512 Kb (x8), 200 - 300ns, NMOS Packages FDIP24W , - 150ns APPLICATION COMPASS M27V256 M27V512 1 Mb 2 Mb B ) Ref M27V102 M27V201 , 256 b 1 Kb 2 Kb 4 Kb 16 Kb O) L) Serial EEPROM, MICROWIRE - Eagle Range: 4.5V to 5.5V Size 256 b 1 Kb 2 Kb 4 Kb 16 Kb Ref M93C06 M93C46 M93S46 M93C56 M93S56 M93C66 M93S66


Original
PDF M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27128A M2716 M27256 M93C86 M27512 M2764A M27V101 M27V256
a447-0100

Abstract: delay line 400ns A447-0150 A447-0025
Text: -0500-09 25NS 50NS 100NS 150NS 200NS 250NS 300NS 350NS 400NS 450NS 500NS 5NS 10NS 20NS 30NS 40NS 50NS 60NS , 200NS 250NS 300NS 350NS 400NS 450NS 500NS 8NS 8NS 8NS 8NS 8NS 8NS 8NS 8NS 8NS 8NS 1 Delays


OCR Scan
PDF /o-90 A447-0025-09 A447-0050-09 A447-0100-09 A447-0150-09 A447-0200-09 A447-0250-09 A447-0300-09 A447-0350-09 A447-0400-09 a447-0100 delay line 400ns A447-0150 A447-0025
1998 - M27C100

Abstract: TSOP32 M27W801 M27W512 M27W402 M27W401 M27W201 M27W102 M27W101 M27C
Text: . OTP and UV EPROM, 5V Size 16Kb 32Kb 64Kb Ref Description M2716 16Kb (x8), 350 - 450ns , NMOS M2732A 32Kb (x8), 200 - 450ns , NMOS M2764A 64Kb (x8), 180 - 450ns , NMOS M27C64A 64Kb (x8), 100 - 200ns 128Kb M27128A 128Kb (x8), 200 - 450ns , NMOS 256Kb M27256 256Kb (x8), 170 - 400ns, NMOS


Original
PDF FLNEWOTP/1098 286-CJ103 M27C100 TSOP32 M27W801 M27W512 M27W402 M27W401 M27W201 M27W102 M27W101 M27C
intel 2114 static ram

Abstract: intel 2114 M2114L2 ac 1501-50 M2114L MD2114 MD2114L2 MD2114L3 MD2114L m2114
Text: M2114L 4096 Bit (1024x4) NNIOS Static RAM FEATURES • Cycle Time Equal to Access Time • Completely Static-No Clock Required • Common Data Input and Output • TTL Compatible Inputs and Outputs • 883A Class B Processing Available • Single + 5 Volt Power Supply • Maximum Access Time , M2114 series, and operations at 90mA over a 5V ± 10% range. The worst-case access time is 450ns with , MD2114L 450ns CERDIP 8-9 M2114L ABSOLUTE MAXIMUM RATINGS Operating Temperature


OCR Scan
PDF M2114L 1024x4) -495imW M2114 4096-bit M2114L2 M2114L3 M2114L intel 2114 static ram intel 2114 M2114L2 ac 1501-50 MD2114 MD2114L2 MD2114L3 MD2114L m2114
LQH3C4R7 murata

Abstract: LQH3C4R7 MBR130 A914BYW-4R7M G5104 boost SOT23-5 n5c1 316k1
Text: . Furthermore, the 500mA current limit, 450ns fixed minimum off-time and tiny SOT23-5 package facilitates the , ), ILIM=500mA(typ.) and a minimum off time tOFF= 450ns . Output Capacitor Selection According to the


Original
PDF EV5104-10 G5104 500mA 450ns OT23-5 LQH3C4R7 murata LQH3C4R7 MBR130 A914BYW-4R7M boost SOT23-5 n5c1 316k1
Not Available

Abstract: No abstract text available
Text: 60NS 8NS A447-0350-09 350NS 70NS 8NS A447-0400-09 400NS 80NS 8NS 450NS , 8NS A447-0450-08 450NS 8NS A447-0100-08 — Com patible with TTL and DTL circuits â


OCR Scan
PDF /o-90Â A447-0300-08 300NS A447-0070-08 A447-0350-08 350NS A447-0080-09 A447-0400-08 400NS A447-0090-08
PC19060

Abstract: EI96
Text: . 96 Timing Diagram 28. (JX Mode) Read of DMA Chaining Parameters from Local B u s , .99 Timing Diagram 32. (SX Mode) Direct Slave or DMA Burst Write to Local B Page - 77 Version 1.2 Section B PCI9060 SECTION 8 TIMING DIAGRAMS Page - 78 Version 1.2 Section B PCI9060 SECTION 8 TIMING DIAGRAMS Ons 100ns 200ns 300ns 400ns 500ns , # Asserting Local Output LRESETO# Page - 79 Version 1.2 Section B PCI9060 SECTION 8 TIMING


OCR Scan
PDF PCI9060 PCI9060 PC19060 EI96
Supplyframe Tracking Pixel