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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
SN75ALS175NSLE SN75ALS175NSLE ECAD Model Texas Instruments Quadruple Differential Line Receiver 16-SO 0 to 70
SN75ALS175NSRE4 SN75ALS175NSRE4 ECAD Model Texas Instruments QUAD LINE RECEIVER, PDSO16, GREEN, PLASTIC, SOP-16
CD74AC175NSR CD74AC175NSR ECAD Model Texas Instruments AC SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, PDSO16, GREEN, PLASTIC, SOP-16
SN74F175NSR SN74F175NSR ECAD Model Texas Instruments Quadruple D-Type Flip-Flops With Clear 16-SO 0 to 70
SN74LS375NSR SN74LS375NSR ECAD Model Texas Instruments Quad bistable latches 16-SO 0 to 70
SN74LS75NSR SN74LS75NSR ECAD Model Texas Instruments Quad bistable latches 16-SO 0 to 70

A1405A39-75nS-B datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
A1405A39-75nS-B A1405A39-75nS-B ECAD Model RCD Components ACTIVE (DIGITAL) DELAY LINE Original PDF

A1405A39-75nS-B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
HYNIX manufacturing code

Abstract: HYMP564P72BP8-Y5 HYNIX lot date code HYMP564P72BP8-C4 HYMP564P72BP8-E3 HYMP564P72BP8-S5
Text: 3C 12.5ns 32 28 Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns 3C , ) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe , Manufacture part number ( Component generation) B 42 B 42 B 42 B 42 84


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PDF HYMP564P72BP8-E3 HYMP564P72BP8-C4 HYMP564P72BP8-Y5 HYMP564P72BP8-S5 HYNIX manufacturing code HYMP564P72BP8-Y5 HYNIX lot date code HYMP564P72BP8-C4 HYMP564P72BP8-E3 HYMP564P72BP8-S5
HYMP512U64BP8-C4

Abstract: HYMP512U64BP8-Y5 HYMP512U64BP8-S5 HYMP512U64BP8-S6 HYMP512U64BP8-E3 Hynix HYMP512U64BP8-Y5 HYMP512U64BP8C4 HYNIX hymp512u64 1E29
Text: Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns 3C 15ns 3C 12.5ns , Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe Characteristics N/A 00 N/A 00 N/A 00 N/A


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PDF HYMP512U64BP8-E3 HYMP512U64BP8-C4 HYMP512U64BP8-Y5 HYMP512U64BP8-S5 HYMP512U64BP8-S6 HYMP512U64BP8-C4 HYMP512U64BP8-Y5 HYMP512U64BP8-S5 HYMP512U64BP8-S6 HYMP512U64BP8-E3 Hynix HYMP512U64BP8-Y5 HYMP512U64BP8C4 HYNIX hymp512u64 1E29
2008 - 13A-08

Abstract: 22V10AB 22V10A LVCMOS25 LVCMOS33 GAL22V10 ispGAL22V10AV-5LNI ISPGAL22V10AV-23LSN 22V10AV ispGAL22V10AV-75LNNI
Text: Voltage V = 3.3V B = 2.5V C = 1.8V Speed 23 = 2.3ns 28 = 2.8ns 5 = 5.0ns 75 = 7.5ns Package J , Wor ld's Fast est & Sma lles SPLD t ispGAL22V10AV/ B /C In-System Programmable Low Voltage , Semiconductor Corp. 1 isp22v10a_03.0 Lattice Semiconductor ispGAL22V10AV/ B /C Data Sheet Absolute , VCCO are the average of the Min and Max values. 7 Lattice Semiconductor ispGAL22V10AV/ B /C , = 1.8V - 150 - µA ispGAL22V10AV/ B /C 1, 2 ICC ICC3 1. 2. 3. Operating


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PDF ispGAL22V10AV/B/C ispGAL22V10A ispGAL22V10AV-5LNNI ispGAL22V10AV-75LSNI ispGAL22V10AV-5LSNI ispGAL22V10AV-75LNNI 3A-08. 13A-08 22V10AB 22V10A LVCMOS25 LVCMOS33 GAL22V10 ispGAL22V10AV-5LNI ISPGAL22V10AV-23LSN 22V10AV ispGAL22V10AV-75LNNI
HYNIX lot date code

Abstract: HYNIX manufacturing code HYMP512P72BP8-C4 HYMP512P72BP8-E3 HYMP512P72BP8-S5 HYMP512P72BP8-Y5 ad lot id
Text: 15ns 3C 12.5ns 32 28 Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns , Command Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory , 32 2 32 2 32 83 Manufacture part number ( Component generation) B 42 B


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PDF HYMP512P72BP8-E3 HYMP512P72BP8-C4 HYMP512P72BP8-Y5 HYMP512P72BP8-S5 HYNIX lot date code HYNIX manufacturing code HYMP512P72BP8-C4 HYMP512P72BP8-E3 HYMP512P72BP8-S5 HYMP512P72BP8-Y5 ad lot id
HYNIX manufacturing code

Abstract: HYMP512P72BP4-S5 HYMP512P72BP4-Y5 HYNIX lot date code HYMP512P72BP4-C4 HYMP512P72BP4-E3
Text: 3C 15ns 3C 12.5ns 32 28 Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns , Command Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory , 32 83 Manufacture part number ( Component generation) B 42 B 42 B 42 B


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PDF HYMP512P72BP4-E3 HYMP512P72BP4-C4 HYMP512P72BP4-Y5 HYMP512P72BP4-S5 HYNIX manufacturing code HYMP512P72BP4-S5 HYMP512P72BP4-Y5 HYNIX lot date code HYMP512P72BP4-C4 HYMP512P72BP4-E3
HYMP564U64BP8-C4

Abstract: HYMP564U64BP8-Y5 HYMP564U64BP8-S6 66 2c HYMP564U64BP8-E3 HYMP564U64BP8-S5 HYMP564U64 1E29
Text: Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns 3C 15ns 3C 12.5ns , Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe Characteristics N/A 00 N/A 00 N/A 00 N/A


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PDF HYMP564U64BP8-E3 HYMP564U64BP8-C4 HYMP564U64BP8-Y5 HYMP564U64BP8-S5 HYMP564U64BP8-S6 HYMP564U64BP8-C4 HYMP564U64BP8-Y5 HYMP564U64BP8-S6 66 2c HYMP564U64BP8-E3 HYMP564U64BP8-S5 HYMP564U64 1E29
7R7S

Abstract: SPD5823 SPD5819 SPD5818 SPD5817 SPD5825 5R30 5A16 12R2 12R1/52
Text: 3.0A 5.0A 6.0A 8.0A 10A 20A CASE TO-52 TO-52 DO-41 TO-52 (S) or ( B ) TO-5 TO-52(M) (S) or ( B ) (S) or ( B ) DO-4 TO-59* TO-3 3ns 9ns SCHOTTKY 15ns 10ns SCHOTTKY 20ns 20ns 50ns 35ns 35ns 35ns " 20 2A16 , -61 TO-3* DO-5 DO-5 TO-61 TO-3* DO-5 TO-63 TO-3* 50ns 50ns 50ns 50ns 50ns 50ns 50ns 75ns 75ns 75ns 75ns 75ns 75ns 50 5R5S 5R5/61 5R5/3D 5R6S 5R6/61 5R6/3D SER801 5R7S 5R7/61 5R7/3D 5R8S 5R8/63 5R8/3D 70 , /61 15R6/3D SER803 15R7S 15R7/61 15R7/3D 15R8S 15R8/63 15R8/3D 200 SER804 (S) = DO-4 ( B


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PDF DO-41 SPD5817 SPD5823 SPD5818 SPD5824 SPD5819 SPD5825 5RO/52 5R1/52 SER9050 7R7S SPD5823 SPD5819 SPD5818 SPD5817 SPD5825 5R30 5A16 12R2 12R1/52
HYMP512S64BP8-C4

Abstract: HYMP512S64BP8-Y5 HYMP512S64BP8 HYMP512S64BP8-E3 HYMP512S64BP8-S5 DDR2 SODIMM SPD JEDEC
Text: Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to , 37 Internal Write to Read Command Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe Characteristics N/A 00 N/A 00 N , generation) B 42 B 42 B 42 B 42 84 Manufacture part number ( Package Materials


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PDF HYMP512S64BP8-E3 HYMP512S64BP8-C4 HYMP512S64BP8-Y5 HYMP512S64BP8-S5 HYMP512S64BP8-C4 HYMP512S64BP8-Y5 HYMP512S64BP8 HYMP512S64BP8-E3 HYMP512S64BP8-S5 DDR2 SODIMM SPD JEDEC
HYMP512U72BP8-C4

Abstract: HYMP512U72BP8-Y5 HYMP512U72BP8-E3 HYMP512U72BP8-S5
Text: 3C 12.5ns 32 28 Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns 3C , ) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe , 32 83 Manufacture part number ( Component generation) B 42 B 42 B 42 B


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PDF HYMP512U72BP8-E3 HYMP512U72BP8-C4 HYMP512U72BP8-Y5 HYMP512U72BP8-S5 HYMP512U72BP8-C4 HYMP512U72BP8-Y5 HYMP512U72BP8-E3 HYMP512U72BP8-S5
HYMP564U72BP8-C4

Abstract: HYMP564U72BP8-Y5 HYMP564U72BP8-E3 HYMP564U72BP8-S5
Text: 3C 12.5ns 32 28 Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns 3C , ) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe , 32 83 Manufacture part number ( Component generation) B 42 B 42 B 42 B


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PDF HYMP564U72BP8-E3 HYMP564U72BP8-C4 HYMP564U72BP8-Y5 HYMP564U72BP8-S5 HYMP564U72BP8-C4 HYMP564U72BP8-Y5 HYMP564U72BP8-E3 HYMP564U72BP8-S5
movinand

Abstract: movinand DECODER S3C49VCX03 1g nand mcp movi nand 16G nand flash S3C49v 8G nand MCP NAND 16G nand
Text: Classification A : NAND + MCU B : NAND + NAND + MCU C : NAND + NAND + NAND + NAND + MCU D : NAND + NAND + , A 2G*2 SL C 2.7V ~ 3.6V 2.7V ~ 3.6V x8 B 1GByte 2G*4 SL C 2.7V , 13 14 15 16 17 18 10. Generation M : 1st Generation B : 3rd Generation D : S3C49NBX01 F , Org Opt NONE A 2G 1.8V 1.8V x8 SLC B 1G OneNAND 1.8V 1.8V x16 , : FBGA (Halogen-Free, Lead-Free) B : FBGA (Halogen-Free, OSP Lead-Free) D : FBGA (Lead-Free) E : LGA


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LF 440C

Abstract: 30120CC 15120C 30100C p650c RP640C
Text: HARRIS DUAL HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE & T O -2 51A A ·f (AVG) V rrm T O -252A A ' f (AVG) TG -2 20A B ·f (AVG) TO -247 · f (AVG) 4A x2 R H R D 440C C 2.1V 35ns R H R D 450C C 2.1V 35ns R H R D 460C C 2.1V 35ns 4A x2 R H R D 440C C S 2.1V 35ns R H R D 450C C S , 70ns R H R G 15120C C 3.2V 75ns R H R G 3070C C 3.0V 75ns R H R G 3080C C 3.0V 75ns R H R G 3090C C 3.0V 75ns R H R G 30100C C 3.0V 75ns R H R G 30120C C 3.2V 75ns 800V 900V 1000V 1200V


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PDF -252A RP840C 15Ax2 1540C 1550C 1560CC 3040C 3050C 3060C LF 440C 30120CC 15120C 30100C p650c RP640C
HEP transistors

Abstract: 250/motorola hep hep 570
Text: > m ö o *u m b -1 O ULTRA FAST EPION II RECTIFIERS (CONTINUED) ADC CASE piv 50 70 100 125 150 200 (S) = DO-4 ( B ) = TO-66 (M) lb -1 b -1 cr 30A DO-5 50ns 5R5S 7R5S 10R5S 12R5S 15R5S TO-61 50ns 5R5/61 7R5/61 10R5/61 12R5/61 , 70A DO-5 50ns SER801 DO-5 75ns 5R7S 7R7S SER802 10R7S 12R7S SER803 SER804 15R7S 75A TO-61 75ns 5R7/61 7R7/61 10R7/61 12R7/61 15R7/61 TO-3* 75ns 5R7/3D 7R7/3D 10R7/3D 12R7/3D 15R7/3D DO-5 75ns 5R8S


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PDF 10R5S 12R5S 15R5S 5R5/61 7R5/61 10R5/61 12R5/61 15R5/61 10R5/3D 12R5/3D HEP transistors 250/motorola hep hep 570
HP 2601

Abstract: hp 2611 gi 2601 HCPL-0611 OC40 HCPL-2601 HCPL-0601 HCPL-0600 6N137 PC910 v
Text: * 50 85 2.5* 0-70 1.75/10 60* 20ns* 15ns* - - 0.6/5,13 0.6* 75ns - ; =77-, b ./< ,J HCPL , ] 1 * - 2 * B a * tt « If max (■A) Vr max (V) Pm max (mW) Vcc max (V) Vcc* IOL max (mA) Pm max , * (lis) Jt tnin typ* (MHi) m t PS2007B B % 10 5 - 50 85 2.5 0-70 1.7/10 60* - - - 600/5 0.6/5,13 0.7* 75ns - f< vUl VccS4.5-S.SV a OC40 30 3 50 7* 20 - 1.0 0-70 1.6/30 - - - - - 0.5/-, — - 100ns* - f , /5,13 0.6* 75ns - f'(;» IWH.5-5.5V HCPL-2601,2611 HP 20 5 - 7 * 25 40 3.0 0-70 1.75/10 60* - 15ns


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PDF PS2007B 100ns* 6N137 120ns TLP554 TLP2601 HCPL-0600 HCPL-0601 HCPL-0611 HP 2601 hp 2611 gi 2601 HCPL-0611 OC40 HCPL-2601 HCPL-0601 PC910 v
2005 - DDR333

Abstract: micron ddr TN-46-13 DDR400 DDR200 DDR266 MT46V64M8
Text: DDR266 tRCD 20ns 3 (20ns / 7.5ns = 2.7 ) 1 (EQ 1) t RCD 22.5ns (22.5ns = 3 x 7.5ns ) DDR333 18ns tRCD 3 (18ns / 6ns = 3 ) DDR266 18ns tRCD DDR333 3 22.5ns (18ns / 7.5ns = 2.4 ) 3 2 DDR333 JEDEC , 7.5ns 15ns 22.5ns 30ns ACT NOP NOP READ NOP CK# CK tCK = 7.5ns tRCD DDR266 ( tRCD ) = tRCD (JEDEC) = 3 × tCK = 22.5ns ( = 15ns) 0ns 7.5ns 15ns 22.5ns


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PDF TN-46-13 MT46V64M8) DDR200 DDR266 DDR333 DDR400 09005aef81c057dd/Source: DDR333 micron ddr TN-46-13 DDR400 DDR200 DDR266 MT46V64M8
2000 - MUR840

Abstract: RHRP8120 ultrafast recovery dual rectifier RHRU100120 smps design 32V RURG8060 Hyperfast Diode 1200V RURP1520 RURD420S RURD420
Text: FO-011.2 5/12/00 12:09 PM Page 1 I N T E R S I L C O R P O R AT I O N B U I L D I N G , B U I L D I N G S I L I C O N A D V A N TA G E S F O R T EC H N O LO GY U LT R A F A S T A N D H , RURU10060 RURU15060 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V , 2.1V 70ns RHRP15100 3.0V 70ns RHRP30100 3.0V 75ns RHRG30100 3.0V 75ns RHRD6120 , RHRU100120 RHRU150120 3.2V 70ns 3.2V 75ns 3.2V 75ns 3.2V 75ns 3.2V 100ns 3.2V 100ns


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PDF FO-011 O-218 O-204AA O-220 Rating/10 MS012AA O-262, O-263 O-264X MUR840 RHRP8120 ultrafast recovery dual rectifier RHRU100120 smps design 32V RURG8060 Hyperfast Diode 1200V RURP1520 RURD420S RURD420
USD1120

Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE UT347 T0447 USD1140 150A 100V gto USD245
Text: }, ; S0LTA 6 E TYPE ' W .y : .\30#: 35V . : 'f r t t " . Vf fpSM-' 't V B E 1' Vf fFSM' TVTPE V , igh-Relrability (H R ) S c re e n in g 7. Center-tap 2 3 A per leg. U NITROD E CORPORATION · 5 FO R B E S ROAD , 5 ° C is 45V, V RRM @ 15 0° C is 35V. U NITROD E CORPORATION · 5 FO R B E S ROAD LEXIN GTO N . MA , - 25 to 50ns) .iA ;- - 7 : * . zsk. A ; ; 5* · B 6A '.M-'-:.:, tO , Reliability (H R ) Screening. S e e individual datasheets. UNITRODE CORPORATION · 5 FO R B E S ROAD LEXIN


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PDF DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE UT347 T0447 USD1140 150A 100V gto USD245
2008 - 5LSI

Abstract: 22V10A GAL22LV10 GAL22V10 LVCMOS25 LVCMOS33 ISPGAL22V10AV-23LN
Text: Wor ld's Fast est & Sma lles SPLD t ispGAL22V10AV/ B /C In-System Programmable Low Voltage , . www.latticesemi.com 1 isp22v10a_03.0 Lattice Semiconductor ispGAL22V10AV/ B /C Data Sheet ispGAL , the feedback available as inputs to the AND array. 2 Lattice Semiconductor ispGAL22V10AV/ B /C , ispGAL22V10AV/ B /C Data Sheet Figure 5. Logic Diagram/JEDEC Fuse Map ­ PLCC & (QFN/QFNS) Package Pinout JEDEC , Drain Bit JEDEC Fuse #5807 4 17 (15) 16 (14) Lattice Semiconductor ispGAL22V10AV/ B /C


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PDF ispGAL22V10AV/B/C ispGAL22V10A dGAL22V10AV-75LNNI 3A-08. ispGAL22V10AV/B/C 32-pin 5LSI 22V10A GAL22LV10 GAL22V10 LVCMOS25 LVCMOS33 ISPGAL22V10AV-23LN
2008 - ISPGAL22V10AV-23LSN

Abstract: 5LSI GAL22LV10 GAL22V10 LVCMOS25 LVCMOS33 5807 sp ispGAL22V10AV-5LSNI
Text: Voltage V = 3.3V B = 2.5V C = 1.8V Speed 23 = 2.3ns 28 = 2.8ns 5 = 5.0ns 75 = 7.5ns A D LL IS , ispGALTM22V10AV/ B /C Device Datasheet June 2010 All Devices Discontinued! Product Change , ispGAL22V10AV/ B /C In-System Programmable Low Voltage ´® E2CMOS PLD Generic Array Logic December 2008 , . www.latticesemi.com 1 isp22v10a_03.0 Lattice Semiconductor ispGAL22V10AV/ B /C Data Sheet ispGAL , available as inputs to the AND array. 2 Lattice Semiconductor ispGAL22V10AV/ B /C Data Sheet NOTE


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PDF ispGALTM22V10AV/B/C ispGAL22V10AV ispGAL22V10AB ispGAL22V10AV-23LS ispGAL22V10AV-23LSN ispGAL22V10AV-5LS ispGAL22V10AV-5LSN ispGAL22V10AV-75LS ispGAL22V10AV-75LSN ispGAL22V10AV-5LSI ISPGAL22V10AV-23LSN 5LSI GAL22LV10 GAL22V10 LVCMOS25 LVCMOS33 5807 sp ispGAL22V10AV-5LSNI
HYMP532S64BP6-E3

Abstract: HYMP532S64BP6-C4 HYMP532S64BP6-Y5 HYMP532S64BP6-S5 10 M 8B PLL00
Text: 37 Internal Write to Read Command Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe Characteristics N/A 00 N/A 00 N , number ( Component generation) B 42 B 42 B 42 B 42 84 Manufacture part


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PDF HYMP532S64BP6-E3 HYMP532S64BP6-C4 HYMP532S64BP6-Y5 HYMP532S64BP6-S5 HYMP532S64BP6-E3 HYMP532S64BP6-C4 HYMP532S64BP6-Y5 HYMP532S64BP6-S5 10 M 8B PLL00
0909NS

Abstract: GDDR5 10x10mm, LGA, 44 pin 60-LGA 170-FBGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA POP-SAC105
Text: . Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E , -400F (Lead-Free) T : TSOP2 Z : FBGA (Lead-Free) - DDR SDRAM 6 : STSOP2 (Halogen-Free, Lead-Free) B : FBGA , : FBGA (Lead-Free) - GDDR3 SDRAM A : 136-FBGA, FBGA B : 136-FBGA, FBGA (Lead-Free) G : FBGA H : 136 , : FBGA, FBGA (Lead-Free) 9 10 11 12 13 14 15 16 17 18 - GDDR4 SDRAM A : 136-FBGA, FBGA B : 136-FBGA, FBGA (Lead-Free) H : 136-FBGA, FBGA (Halogen-Free, Lead-Free) - GDDR5 SDRAM A : 170-FBGA B : 170


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PDF 16K/16ms 4K/32ms 8K/64ms 16K/32ms 8K/32ms 2K/16ms 4K/64ms 429ns 667ns 0909NS GDDR5 10x10mm, LGA, 44 pin 60-LGA 170-FBGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA POP-SAC105
2005 - Not Available

Abstract: No abstract text available
Text: DATA BUS A DUAL TRANSCEIVER DATA BUS B ENCODER/ DECODER MIL-STD-1553B PROTOCOL AND BIT I/O , Differential input impedance DC to 1MHz, Point B , Figure 2 Differential voltage range Input common mode voltage , CHARACTERISTICS (TRANSMITTER SECTION) Parameter/Conditions Differential output level at Point B , Figure 2 (145 , (DDIP). VCC = 5.5V A. @ VIL = 0.4V B . @ VIH = 2.4V All remaining INPUTS other than in Note 1. VCC = 5.5V A. @ VIL = 0.4V B . @ VIH = 2.4V Min 2.4 -80 -40 -20 -20 -20 -40 2.7 - Max 0.7 -400 -200 +20


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PDF CT2542 CT2543 MIL-STD-1553B BUS-65142 BUS-65144 BUS-65143 BUS-65145 MIL-PRF-38534
common mode rejection ratio test 1553B

Abstract: No abstract text available
Text: MAX - *\ D B 0- DB15 TRISTATE - H _ 75ns MAX TRISTATE o TRISTATE - I |^- 75ns MAX |-« - , Timing Diagram, Status Word Transfer BITEN 500 ns 166ns DTSTB 166ns- ] 75ns DBO - D B 1 5 T R IS T A T E - i t ( B WORDX { bIT it W ORD^ tr'state - H h- 75ns BUFFENA NOTE: 1. R/W = 0 , (Transmitter Section) Parameter/Conditions Differential output level at point B , Figure 1 (145 ohm load , ,13,14,15, 53, 54, 55. VCC= 5.5V A. @ VIL = 0.4V B . @ VIH = 2.4V All remaining INPUTS other than in


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PDF CT2512 MIL-STD-1553B BUS-65112 BUS-65117 Re250 SCDCT2512 CT2512-FP MIL-STD-883 common mode rejection ratio test 1553B
2004 - 22V10A

Abstract: ISPGAL22V10AV-75LNN xx xx qfn 16 BK 5841 5807 sp LVCMOS33 LVCMOS25 GAL22V10 GAL22LV10 QFN-32
Text: Wor ld's Fast est & Sma lles SPLD t ispGAL22V10AV/ B /C In-System Programmable Low Voltage , isp22av_02 Lattice Semiconductor ispGAL22V10AV/ B /C Data Sheet ispGAL Architecture Output Logic , the feedback available as inputs to the AND array. 2 Lattice Semiconductor ispGAL22V10AV/ B /C , ispGAL22V10AV/ B /C Data Sheet Figure 5. Logic Diagram/JEDEC Fuse Map ­ PLCC & (QFN) Package Pinout JEDEC , Drain Bit JEDEC Fuse #5807 4 17 (15) 16 (14) Lattice Semiconductor ispGAL22V10AV/ B /C


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PDF ispGAL22V10AV/B/C ispGAL22V10A ispGAL22V10AV-5LNN ispGAL22V10AV-75LNN ispGAL22V10AV-5LNNI ispGAL22V10AV-75LNNI 22V10A ISPGAL22V10AV-75LNN xx xx qfn 16 BK 5841 5807 sp LVCMOS33 LVCMOS25 GAL22V10 GAL22LV10 QFN-32
2004 - ISPGAL22V10AV-23LNN

Abstract: QFN-32 ISPGAL22V10AV23LN 22V10A GAL22LV10 GAL22V10 LVCMOS25 LVCMOS33 5807 sp
Text: Wor ld's Fast est & Sma lles SPLD t ispGAL22V10AV/ B /C In-System Programmable Low Voltage , isp22v10a_02 Lattice Semiconductor ispGAL22V10AV/ B /C Data Sheet ispGAL Architecture Output Logic , the feedback available as inputs to the AND array. 2 Lattice Semiconductor ispGAL22V10AV/ B /C , ispGAL22V10AV/ B /C Data Sheet Figure 5. Logic Diagram/JEDEC Fuse Map ­ PLCC & (QFN) Package Pinout JEDEC , Drain Bit JEDEC Fuse #5807 4 17 (15) 16 (14) Lattice Semiconductor ispGAL22V10AV/ B /C


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PDF ispGAL22V10AV/B/C ispGAL22V10A ispGAL22V10AV-5LNN ispGAL22V10AV-75LNN ispGAL22V10AV-5LNNI ispGAL22V10AV-75LNNI ISPGAL22V10AV-23LNN QFN-32 ISPGAL22V10AV23LN 22V10A GAL22LV10 GAL22V10 LVCMOS25 LVCMOS33 5807 sp
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