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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
SN75ALS175NSLE SN75ALS175NSLE ECAD Model Texas Instruments Quadruple Differential Line Receiver 16-SO 0 to 70
SN75ALS175NSRE4 SN75ALS175NSRE4 ECAD Model Texas Instruments QUAD LINE RECEIVER, PDSO16, GREEN, PLASTIC, SOP-16
CD74AC175NSR CD74AC175NSR ECAD Model Texas Instruments AC SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, PDSO16, GREEN, PLASTIC, SOP-16
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SN74LS375NSR SN74LS375NSR ECAD Model Texas Instruments Quad bistable latches 16-SO 0 to 70
SN74LS75NSR SN74LS75NSR ECAD Model Texas Instruments Quad bistable latches 16-SO 0 to 70

A1405A-75nS-B datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
A1405A-75nS-B A1405A-75nS-B ECAD Model RCD Components ACTIVE (DIGITAL) DELAY LINE Original PDF

A1405A-75nS-B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DIODE A34

Abstract: General Semiconductor diode ed 25 IR55 1405A a29 diode 1403A diode MARKING A33 diode a29 MMBD1403A MARKING A29
Text: No file text available


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PDF MMBD1401A OT-23 MMBD1404A MMBD1403A MMBD1405A 1403a 1405a DIODE A34 General Semiconductor diode ed 25 IR55 1405A a29 diode 1403A diode MARKING A33 diode a29 MARKING A29
A080S

Abstract: No abstract text available
Text: No file text available


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PDF A0805 SA0805 A1405 14-PIN A1410 10-TAP Mil-STD-883) A080S
A1405

Abstract: No abstract text available
Text: No file text available


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PDF A0805 SA0805 A1405 14-PIN A1410 10-TAP Mil-STD-883)
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 4flb34b 00QQ77G A0805 SA0805 A1405 14-PIN A1410 10-TAP Mil-STD-883)
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF A0805 SA0805 A1405 14-PIN A1410 10-TAP Mil-D23859. A0805, SA0805,
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF A0805 SA0805 A1405 14-PIN A1410 10-TAP A0805, SA0805, A1405,
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 74flb34h A0805 SA0805 A1405 14-PIN A1410 10-TAP
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF A0805 SA0805 A1405 A1410 1000Mfi 100VDC A1405 100nS
2000 - RCD Components

Abstract: A0805 A1405 A1410 MIL-D-83532 SA0805 Digital Delay Lines
Text: 1000M W min. Dielectric Strength 100VDC Rise Time 4nS max. A1405 - 100nS - B RCD


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PDF A0805 SA0805 A1405 A1410 10-TAP 14-PIN MIL-D-23859. 1000M 100VDC A1405 RCD Components MIL-D-83532 Digital Delay Lines
2003 - RCD Components

Abstract: A0805 A1405 A1410 MIL-D-83532 SA0805
Text: 7 A1405 - 100nS - B RCD Type Options: (leave blank if standard) ER, T, 39, or as assigned


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PDF A0805 SA0805 A1405 A1410 10-TAP 14-PIN MIL-D-23859. A1405 100nS RCD Components MIL-D-83532
HYNIX manufacturing code

Abstract: HYMP564P72BP8-Y5 HYNIX lot date code HYMP564P72BP8-C4 HYMP564P72BP8-E3 HYMP564P72BP8-S5
Text: 3C 12.5ns 32 28 Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns 3C , ) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe , Manufacture part number ( Component generation) B 42 B 42 B 42 B 42 84


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PDF HYMP564P72BP8-E3 HYMP564P72BP8-C4 HYMP564P72BP8-Y5 HYMP564P72BP8-S5 HYNIX manufacturing code HYMP564P72BP8-Y5 HYNIX lot date code HYMP564P72BP8-C4 HYMP564P72BP8-E3 HYMP564P72BP8-S5
HYMP512U64BP8-C4

Abstract: HYMP512U64BP8-Y5 HYMP512U64BP8-S5 HYMP512U64BP8-S6 HYMP512U64BP8-E3 Hynix HYMP512U64BP8-Y5 HYMP512U64BP8C4 HYNIX hymp512u64 1E29
Text: Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns 3C 15ns 3C 12.5ns , Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe Characteristics N/A 00 N/A 00 N/A 00 N/A


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PDF HYMP512U64BP8-E3 HYMP512U64BP8-C4 HYMP512U64BP8-Y5 HYMP512U64BP8-S5 HYMP512U64BP8-S6 HYMP512U64BP8-C4 HYMP512U64BP8-Y5 HYMP512U64BP8-S5 HYMP512U64BP8-S6 HYMP512U64BP8-E3 Hynix HYMP512U64BP8-Y5 HYMP512U64BP8C4 HYNIX hymp512u64 1E29
2008 - 13A-08

Abstract: 22V10AB 22V10A LVCMOS25 LVCMOS33 GAL22V10 ispGAL22V10AV-5LNI ISPGAL22V10AV-23LSN 22V10AV ispGAL22V10AV-75LNNI
Text: Voltage V = 3.3V B = 2.5V C = 1.8V Speed 23 = 2.3ns 28 = 2.8ns 5 = 5.0ns 75 = 7.5ns Package J , Wor ld's Fast est & Sma lles SPLD t ispGAL22V10AV/ B /C In-System Programmable Low Voltage , Semiconductor Corp. 1 isp22v10a_03.0 Lattice Semiconductor ispGAL22V10AV/ B /C Data Sheet Absolute , VCCO are the average of the Min and Max values. 7 Lattice Semiconductor ispGAL22V10AV/ B /C , = 1.8V - 150 - µA ispGAL22V10AV/ B /C 1, 2 ICC ICC3 1. 2. 3. Operating


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PDF ispGAL22V10AV/B/C ispGAL22V10A ispGAL22V10AV-5LNNI ispGAL22V10AV-75LSNI ispGAL22V10AV-5LSNI ispGAL22V10AV-75LNNI 3A-08. 13A-08 22V10AB 22V10A LVCMOS25 LVCMOS33 GAL22V10 ispGAL22V10AV-5LNI ISPGAL22V10AV-23LSN 22V10AV ispGAL22V10AV-75LNNI
HYNIX lot date code

Abstract: HYNIX manufacturing code HYMP512P72BP8-C4 HYMP512P72BP8-E3 HYMP512P72BP8-S5 HYMP512P72BP8-Y5 ad lot id
Text: 15ns 3C 12.5ns 32 28 Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns , Command Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory , 32 2 32 2 32 83 Manufacture part number ( Component generation) B 42 B


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PDF HYMP512P72BP8-E3 HYMP512P72BP8-C4 HYMP512P72BP8-Y5 HYMP512P72BP8-S5 HYNIX lot date code HYNIX manufacturing code HYMP512P72BP8-C4 HYMP512P72BP8-E3 HYMP512P72BP8-S5 HYMP512P72BP8-Y5 ad lot id
HYNIX manufacturing code

Abstract: HYMP512P72BP4-S5 HYMP512P72BP4-Y5 HYNIX lot date code HYMP512P72BP4-C4 HYMP512P72BP4-E3
Text: 3C 15ns 3C 12.5ns 32 28 Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns , Command Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory , 32 83 Manufacture part number ( Component generation) B 42 B 42 B 42 B


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PDF HYMP512P72BP4-E3 HYMP512P72BP4-C4 HYMP512P72BP4-Y5 HYMP512P72BP4-S5 HYNIX manufacturing code HYMP512P72BP4-S5 HYMP512P72BP4-Y5 HYNIX lot date code HYMP512P72BP4-C4 HYMP512P72BP4-E3
HYMP564U64BP8-C4

Abstract: HYMP564U64BP8-Y5 HYMP564U64BP8-S6 66 2c HYMP564U64BP8-E3 HYMP564U64BP8-S5 HYMP564U64 1E29
Text: Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns 3C 15ns 3C 12.5ns , Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe Characteristics N/A 00 N/A 00 N/A 00 N/A


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PDF HYMP564U64BP8-E3 HYMP564U64BP8-C4 HYMP564U64BP8-Y5 HYMP564U64BP8-S5 HYMP564U64BP8-S6 HYMP564U64BP8-C4 HYMP564U64BP8-Y5 HYMP564U64BP8-S6 66 2c HYMP564U64BP8-E3 HYMP564U64BP8-S5 HYMP564U64 1E29
7R7S

Abstract: SPD5823 SPD5819 SPD5818 SPD5817 SPD5825 5R30 5A16 12R2 12R1/52
Text: 3.0A 5.0A 6.0A 8.0A 10A 20A CASE TO-52 TO-52 DO-41 TO-52 (S) or ( B ) TO-5 TO-52(M) (S) or ( B ) (S) or ( B ) DO-4 TO-59* TO-3 3ns 9ns SCHOTTKY 15ns 10ns SCHOTTKY 20ns 20ns 50ns 35ns 35ns 35ns " 20 2A16 , -61 TO-3* DO-5 DO-5 TO-61 TO-3* DO-5 TO-63 TO-3* 50ns 50ns 50ns 50ns 50ns 50ns 50ns 75ns 75ns 75ns 75ns 75ns 75ns 50 5R5S 5R5/61 5R5/3D 5R6S 5R6/61 5R6/3D SER801 5R7S 5R7/61 5R7/3D 5R8S 5R8/63 5R8/3D 70 , /61 15R6/3D SER803 15R7S 15R7/61 15R7/3D 15R8S 15R8/63 15R8/3D 200 SER804 (S) = DO-4 ( B


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PDF DO-41 SPD5817 SPD5823 SPD5818 SPD5824 SPD5819 SPD5825 5RO/52 5R1/52 SER9050 7R7S SPD5823 SPD5819 SPD5818 SPD5817 SPD5825 5R30 5A16 12R2 12R1/52
HYMP512S64BP8-C4

Abstract: HYMP512S64BP8-Y5 HYMP512S64BP8 HYMP512S64BP8-E3 HYMP512S64BP8-S5 DDR2 SODIMM SPD JEDEC
Text: Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to , 37 Internal Write to Read Command Delay (tWTR) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe Characteristics N/A 00 N/A 00 N , generation) B 42 B 42 B 42 B 42 84 Manufacture part number ( Package Materials


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PDF HYMP512S64BP8-E3 HYMP512S64BP8-C4 HYMP512S64BP8-Y5 HYMP512S64BP8-S5 HYMP512S64BP8-C4 HYMP512S64BP8-Y5 HYMP512S64BP8 HYMP512S64BP8-E3 HYMP512S64BP8-S5 DDR2 SODIMM SPD JEDEC
HYMP512U72BP8-C4

Abstract: HYMP512U72BP8-Y5 HYMP512U72BP8-E3 HYMP512U72BP8-S5
Text: 3C 12.5ns 32 28 Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns 3C , ) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe , 32 83 Manufacture part number ( Component generation) B 42 B 42 B 42 B


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PDF HYMP512U72BP8-E3 HYMP512U72BP8-C4 HYMP512U72BP8-Y5 HYMP512U72BP8-S5 HYMP512U72BP8-C4 HYMP512U72BP8-Y5 HYMP512U72BP8-E3 HYMP512U72BP8-S5
HYMP564U72BP8-C4

Abstract: HYMP564U72BP8-Y5 HYMP564U72BP8-E3 HYMP564U72BP8-S5
Text: 3C 12.5ns 32 28 Minimun Row Active to Row Active Delay (tRRD) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 29 Minimum RAS to CAS Delay (tRCD) 15ns 3C 15ns 3C , ) 10ns 28 7.5ns 1E 7.5ns 1E 7.5ns 1E 38 Internal Read to Precharge Command Delay (tRTP) 7.5ns 1E 7.5ns 1E 7.5ns 1E 7.5ns 1E 39 Memory Analysis Probe , 32 83 Manufacture part number ( Component generation) B 42 B 42 B 42 B


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PDF HYMP564U72BP8-E3 HYMP564U72BP8-C4 HYMP564U72BP8-Y5 HYMP564U72BP8-S5 HYMP564U72BP8-C4 HYMP564U72BP8-Y5 HYMP564U72BP8-E3 HYMP564U72BP8-S5
movinand

Abstract: movinand DECODER S3C49VCX03 1g nand mcp movi nand 16G nand flash S3C49v 8G nand MCP NAND 16G nand
Text: Classification A : NAND + MCU B : NAND + NAND + MCU C : NAND + NAND + NAND + NAND + MCU D : NAND + NAND + , A 2G*2 SL C 2.7V ~ 3.6V 2.7V ~ 3.6V x8 B 1GByte 2G*4 SL C 2.7V , 13 14 15 16 17 18 10. Generation M : 1st Generation B : 3rd Generation D : S3C49NBX01 F , Org Opt NONE A 2G 1.8V 1.8V x8 SLC B 1G OneNAND 1.8V 1.8V x16 , : FBGA (Halogen-Free, Lead-Free) B : FBGA (Halogen-Free, OSP Lead-Free) D : FBGA (Lead-Free) E : LGA


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PDF
LF 440C

Abstract: 30120CC 15120C 30100C p650c RP640C
Text: HARRIS DUAL HYPER-FAST RECOVERY RECTIFIER PRODUCT LINE & T O -2 51A A ·f (AVG) V rrm T O -252A A ' f (AVG) TG -2 20A B ·f (AVG) TO -247 · f (AVG) 4A x2 R H R D 440C C 2.1V 35ns R H R D 450C C 2.1V 35ns R H R D 460C C 2.1V 35ns 4A x2 R H R D 440C C S 2.1V 35ns R H R D 450C C S , 70ns R H R G 15120C C 3.2V 75ns R H R G 3070C C 3.0V 75ns R H R G 3080C C 3.0V 75ns R H R G 3090C C 3.0V 75ns R H R G 30100C C 3.0V 75ns R H R G 30120C C 3.2V 75ns 800V 900V 1000V 1200V


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PDF -252A RP840C 15Ax2 1540C 1550C 1560CC 3040C 3050C 3060C LF 440C 30120CC 15120C 30100C p650c RP640C
HEP transistors

Abstract: 250/motorola hep hep 570
Text: > m ö o *u m b -1 O ULTRA FAST EPION II RECTIFIERS (CONTINUED) ADC CASE piv 50 70 100 125 150 200 (S) = DO-4 ( B ) = TO-66 (M) lb -1 b -1 cr 30A DO-5 50ns 5R5S 7R5S 10R5S 12R5S 15R5S TO-61 50ns 5R5/61 7R5/61 10R5/61 12R5/61 , 70A DO-5 50ns SER801 DO-5 75ns 5R7S 7R7S SER802 10R7S 12R7S SER803 SER804 15R7S 75A TO-61 75ns 5R7/61 7R7/61 10R7/61 12R7/61 15R7/61 TO-3* 75ns 5R7/3D 7R7/3D 10R7/3D 12R7/3D 15R7/3D DO-5 75ns 5R8S


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PDF 10R5S 12R5S 15R5S 5R5/61 7R5/61 10R5/61 12R5/61 15R5/61 10R5/3D 12R5/3D HEP transistors 250/motorola hep hep 570
HP 2601

Abstract: hp 2611 gi 2601 HCPL-0611 OC40 HCPL-2601 HCPL-0601 HCPL-0600 6N137 PC910 v
Text: * 50 85 2.5* 0-70 1.75/10 60* 20ns* 15ns* - - 0.6/5,13 0.6* 75ns - ; =77-, b ./< ,J HCPL , ] 1 * - 2 * B a * tt « If max (■A) Vr max (V) Pm max (mW) Vcc max (V) Vcc* IOL max (mA) Pm max , * (lis) Jt tnin typ* (MHi) m t PS2007B B % 10 5 - 50 85 2.5 0-70 1.7/10 60* - - - 600/5 0.6/5,13 0.7* 75ns - f< vUl VccS4.5-S.SV a OC40 30 3 50 7* 20 - 1.0 0-70 1.6/30 - - - - - 0.5/-, — - 100ns* - f , /5,13 0.6* 75ns - f'(;» IWH.5-5.5V HCPL-2601,2611 HP 20 5 - 7 * 25 40 3.0 0-70 1.75/10 60* - 15ns


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PDF PS2007B 100ns* 6N137 120ns TLP554 TLP2601 HCPL-0600 HCPL-0601 HCPL-0611 HP 2601 hp 2611 gi 2601 HCPL-0611 OC40 HCPL-2601 HCPL-0601 PC910 v
2005 - DDR333

Abstract: micron ddr TN-46-13 DDR400 DDR200 DDR266 MT46V64M8
Text: DDR266 tRCD 20ns 3 (20ns / 7.5ns = 2.7 ) 1 (EQ 1) t RCD 22.5ns (22.5ns = 3 x 7.5ns ) DDR333 18ns tRCD 3 (18ns / 6ns = 3 ) DDR266 18ns tRCD DDR333 3 22.5ns (18ns / 7.5ns = 2.4 ) 3 2 DDR333 JEDEC , 7.5ns 15ns 22.5ns 30ns ACT NOP NOP READ NOP CK# CK tCK = 7.5ns tRCD DDR266 ( tRCD ) = tRCD (JEDEC) = 3 × tCK = 22.5ns ( = 15ns) 0ns 7.5ns 15ns 22.5ns


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PDF TN-46-13 MT46V64M8) DDR200 DDR266 DDR333 DDR400 09005aef81c057dd/Source: DDR333 micron ddr TN-46-13 DDR400 DDR200 DDR266 MT46V64M8
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