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MSSA114E (3-1437580-2) TE Connectivity Ltd Slide Switches; MSSA114E=SLIDE W/PC TERMINALS ( Alcoswitch )

A114E datasheet (3)

Part Manufacturer Description Type PDF
A114E General Electric Semiconductor Data Handbook 1977 Scan PDF
A114E Harris Semiconductor 1.0A Iout, 500V Vrrm General Purpose Silicon Rectifier Scan PDF
A114E Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF

A114E Datasheets Context Search

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A114B

Abstract: A114D A114M A114C ge a114d A114E ge A114B A114A-M A114-B DT230
Text: 400 — 1N5060 1N.-.2-.6 " GER4004 ■.:■.■1N5625 A15D A115D 500 . A14E — — A114E â , A114C A114D 2.0 Amps 200-600 Volts A114E THE GENERAL ELECTRIC A114 IS A 2.0 AMPERE, AXIAL-LEADED , , Storage, Tstg A114D A114E A114M 400 400 400 1.0-2.0 -40-85- 3.5 500 500 500 — 65°C to +150°C , Microamps. Microamps. Microamps. • Nanosecs. Nanosecs. I 559 A114B A114C A114D A114E All 4M CIRCUIT , A114B A114C A114D A114E A114M S io ■CYCLES AT «0 CYCLES PER SECOND MAXIMUM NON-REPETITIVE


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PDF 1N5059-62 1N4245-49 1N5624-27 DT230 A14A-P GER4001-7 A114A-M A15A-N A115A-M DT23CF A114B A114D A114M A114C ge a114d A114E ge A114B A114A-M A114-B
A114M

Abstract: A114B A114C A114D
Text: Y SE A L E D PACKAGE. A114B A114C A114D A114E A114M a b s o lu te m axim u m ratings: (25 , Tem perature Range Operating, Tj Storage, T stg 200 200 200 A114C 300 300 300 - A114D A114E 400 , - Nanosecs. I -Ô0 //YB-IX 559 17 9 0 8- O 7 7294621 A114B A114C A114P A114E A114M P O W E R , A L C H A R A C T E R IST IC S A114C A114D A114E A114M FO R W ARD C H A R A C T E R IS T IC S , 1792 8-09 7294621 A114B A114C A114D A114E A114M P O W E R E X INC 74 DE 172T4t,21 Q


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PDF A114B A114C A114D A114E A114M 80ARD A114M
A114 Series

Abstract: A114A A114 A114D A114B A114C A114F D0204 A114E s0k00n
Text: in SEMICONDUCTOR A114 Seríes December 1993 1 A, 50V - 600V Diodes Features • Glass Passivated Junction • Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability • tow Reverse Current Leakage • High Surge Current Capability Description The Harris A114A, A114B, A114C, A114D, A114E , A114F, and A114M are fast-recovery silicon rectifiers (tRH » 200ns max.) featuring low forward voltage , A114E Maximum Peak (Repetitive) Reverse Voltage .VRRM 50 100 200 300 400 500 Maximum


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PDF A114A, A114B, A114C, A114D, A114E, A114F, A114M 200ns D0-204 S0K00n A114 Series A114A A114 A114D A114B A114C A114F D0204 A114E s0k00n
A114F

Abstract: A114A A114 A114D 431T A114B A114C A114M A114E A114 Series
Text: HARRIS SEMICOND SECTOR bflE J> M 4302E71 00S0314 13b «HAS ¡2 SEMICONDUCTOR A114 Series December 1993 1 A, 50V - 600V Diodes Features • Glass Passivated Junction • Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability • Low Reverse Current Leakage • High Surge Current Capability Description The Harris A114A, A114B, A114C, A114D, A114E , A114F, and A114M are , Resistive or Inductive Loads (Note 1) A114F A114A A114B A114C A114D A114E A114M UNITS Maximum Peak


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PDF 4302E71 00S0314 A114A, A114B, A114C, A114D, A114E, A114F, A114M 200ns A114F A114A A114 A114D 431T A114B A114C A114E A114 Series
1998 - A114E

Abstract: DTA114ESA DTA114EE DTA114EKA DTA114EUA DTA114ES dta114eu pnp resistor resistors
Text: transistor (Built-in resistor type) FEquivalent circuit (96-250- A114E ) 327 Transistors


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PDF DTA114EE DTA114EUA DTA114EKA DTA114ESA 96-250-A114E) DTA114EE/DTA114EUA/DTA114EKA/DTA114ESA A114E DTA114ESA DTA114ES dta114eu pnp resistor resistors
1998 - transistor 513

Abstract: DTA114ES a114* transistor A114E IMB11A UMB11N Transistors General transistor a114e
Text: = 25_C) (96-454- A114E ) 512 Transistors UMB11N / IMB11A FElectrical characteristics


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PDF UMB11N IMB11A DTA114Es 96-454-A114E) transistor 513 a114* transistor A114E IMB11A Transistors General transistor a114e
TRANSISTOR D 1902

Abstract: a114* transistor 1902 transistor UMB rohm 08P1
Text: be exceeded. * 2 200mW per element must not be exceeded. (96-454- A114E ) n o v M 501


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PDF DTA114E UMB11N 1MB11A --50V, 100MHz* IMB11A TRANSISTOR D 1902 a114* transistor 1902 transistor UMB rohm 08P1
ge a15a

Abstract: A114A A15E A15A A14A-P A115B A114B A115A A115D SPSS
Text: 400 — 1N5060 1N.-.2-.6 " GER4004 ■.:■.■1N5625 A15D A115D 500 . A14E — — A114E â


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PDF 1N5059-62 1N4245-49 1N5624-27 DT230 A14A-P GER4001-7 A114A-M A15A-N A115A-M DT23CF ge a15a A114A A15E A15A A14A-P A115B A114B A115A A115D SPSS
capacitor huang

Abstract: JESD22-A114E RF1401D A114E
Text: discharge times are according in standard JESD22- A114E ELECTRONICS TESTING CENTER, TAIWAN Report No


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PDF 08-09-MAS-131-02 92MHz RF1401D JESD22- A114E JESD22-A114E) capacitor huang JESD22-A114E RF1401D A114E
ESS-2000-G365

Abstract: JESD22-A114E A114E RO3101A
Text: discharge times are according in standard JESD22- A114E Classification Criteria All samples used must


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PDF 08-09-MAS-131-01 92MHz RO3101A JESD22- A114E JESD22-A114E) ESS-2000-G365 JESD22-A114E A114E RO3101A
Not Available

Abstract: No abstract text available
Text: (96-250- A114E ) 313 Transistors DTA114EE/DTA114EUA/DTA114EKA/DTA114ESA • A b s o lu te maxim


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PDF DTA114EE/DTA114EUA/DTA114E KA/DTA114ESA DTA114EE DTA114EKA DTA114ECA DTA114ESA DTA114EE/DTA114EUA/DTA114EKA/DTA114ESA -200/i -5m-10m -50m-100m
2008 - J2284

Abstract: J1939 GMW3122 SN65HVD1050AQDRQ1 TJA1050 CAN J1939 protocol books
Text: °C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E , CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E , Vref pin stressed with respect to GND. Tested in accordance


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PDF SN65HVD1050A-Q1 SLLS888 TJA1050 J2284 J1939 GMW3122 SN65HVD1050AQDRQ1 TJA1050 CAN J1939 protocol books
2008 - J2284

Abstract: No abstract text available
Text: values at 25°C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E , CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E , Vref pin stressed with respect to GND. Tested in


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PDF SN65HVD1050A-Q1 SLLS888 TJA1050 J2284
2008 - GMW3122

Abstract: SAE J2284 transceiver 1050AQ
Text: values at 25°C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E , CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E , Vref pin stressed with respect to GND. Tested in


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PDF SN65HVD1050A-Q1 SLLS888 TJA1050 GMW3122 SAE J2284 transceiver 1050AQ
2008 - GMW3122

Abstract: 11783 j1939 iso 11783 CAN J1939 protocol books TJA1050 SN65HVD1050AQDRQ1 J2284 J1939 SAE J2284 transceiver SN65HVD1050AL
Text: V All typical values at 25°C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E , CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E , Vref pin stressed


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PDF SN65HVD1050A-Q1 SLLS888A TJA1050 GMW3122 11783 j1939 iso 11783 CAN J1939 protocol books TJA1050 SN65HVD1050AQDRQ1 J2284 J1939 SAE J2284 transceiver SN65HVD1050AL
A114B

Abstract: A114A GER4007 A14P A115F A114F A115C A115B A115D A115A
Text: 400 — 1N5060 1N.-.2-.6 " GER4004 ■.:■.■1N5625 A15D A115D 500 . A14E — — A114E â


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PDF 1N5059-62 1N4245-49 1N5624-27 DT230 A14A-P GER4001-7 A114A-M A15A-N A115A-M DT23CF A114B A114A GER4007 A14P A115F A114F A115C A115B A115D A115A
A115A

Abstract: A115F A115D A14F GER4007 A114A A114C A115B A115C DT230
Text: 400 — 1N5060 1N.-.2-.6 " GER4004 ■.:■.■1N5625 A15D A115D 500 . A14E — — A114E â


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PDF 1N5059-62 1N4245-49 1N5624-27 DT230 A14A-P GER4001-7 A114A-M A15A-N A115A-M DT23CF A115A A115F A115D A14F GER4007 A114A A114C A115B A115C
13002

Abstract: JESD22-A115-A 09-03-MAS-130-02 A114E JESD22-A114E capacitor huang
Text: Resistor and discharge times are according in standard JESD22- A114E ELECTRONICS TESTING CENTER


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PDF 09-03-MAS-130-02 SF1141B-2 JESD22-A115-A JESD22-A115-A) 13002 JESD22-A115-A 09-03-MAS-130-02 A114E JESD22-A114E capacitor huang
2008 - iso 11783

Abstract: GMW3122 J2284 SN65HVD1040A-Q1 tja1040 J1939 SN65HVD1040AQDRQ1 11783 j1939 LOGICSTATE
Text: accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E , Standard 22 Test Method A114E , SPLIT pin stressed with respect to GND. Tested in accordance JEDEC Standard


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PDF SN65HVD1040A-Q1 SLLS889 TJA1040 iso 11783 GMW3122 J2284 SN65HVD1040A-Q1 tja1040 J1939 SN65HVD1040AQDRQ1 11783 j1939 LOGICSTATE
1998 - a144* transistor

Abstract: a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General C144E transistor TRANSISTORS
Text: maximum ratings (Ta = 25_C) FExternal dimensions (Units: mm) (96-454- A114E ) 512 Transistors


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PDF 94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMT17 2SA1036K 500mA 94S-366-A032) 96-427-C022) a144* transistor a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General C144E transistor TRANSISTORS
2008 - Not Available

Abstract: No abstract text available
Text: values at 25°C. Tested in accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E , CANH and CANL bus pins stressed with respect to each other and GND. Test method based upon JEDEC Standard 22 Test Method A114E , Vref pin stressed with respect to GND. Tested in


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PDF SN65HVD1050A-Q1 SLLS888A TJA1050 GMW3122 J2284
A114E

Abstract: JESD22-A115-A capacitor huang JESD22-A115 JESD22-A114E
Text: / Discharge Resistor and discharge times are according in standard JESD22- A114E ELECTRONICS TESTING


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PDF 09-03-MAS-130-01 SF1143B-2 JESD22-A115-A JESD22-A115-A) A114E JESD22-A115-A capacitor huang JESD22-A115 JESD22-A114E
IN4247

Abstract: A115B IN4246 in4248 A115D GER4007 A115F A14A-P A115C a14s
Text: – .:■.■1N5625 A15D A115D 500 . A14E — — A114E — A15E A115E 600 — 1N5061 1N424/ â


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PDF 270Mm. 400Mm. IN4247 A115B IN4246 in4248 A115D GER4007 A115F A14A-P A115C a14s
2008 - Not Available

Abstract: No abstract text available
Text: accordance JEDEC Standard 22, Test Method A114E. Test method based upon JEDEC Standard 22 Test Method A114E , Standard 22 Test Method A114E , Vref pin stressed with respect to GND. Tested in accordance JEDEC Standard


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PDF SN65HVD1050A-Q1 SLLS888A TJA1050
ge a15a

Abstract: A15F A115E GER4007 A115F A14F DT230 A15A
Text: 400 — 1N5060 1N.-.2-.6 " GER4004 ■.:■.■1N5625 A15D A115D 500 . A14E — — A114E â


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PDF 1N5059-62 1N4245-49 1N5624-27 DT230 A14A-P GER4001-7 A114A-M A15A-N A115A-M DT23CF ge a15a A15F A115E GER4007 A115F A14F A15A
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