The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
IM6654AMJG IM6654AMJG ECAD Model Rochester Electronics LLC UVPROM, 512X8, 350ns, CMOS, CDIP24,
MD27C64-35 MD27C64-35 ECAD Model Rochester Electronics LLC UVPROM, 8KX8, 350ns, CMOS, PACKAGE-28
QD2716-1 QD2716-1 ECAD Model Rochester Electronics LLC UVPROM, 2KX8, 350ns, MOS, CDIP24, CERDIP-24
8411101ZA 8411101ZA ECAD Model Rochester Electronics LLC UVPROM, 32KX8, 350ns, CMOS, CQCC32, CERAMIC, LCC-32
8411101YA 8411101YA ECAD Model Rochester Electronics LLC UVPROM, 32KX8, 350ns, CMOS, CDIP28, CERAMIC, DIP-28
8411101ZX 8411101ZX ECAD Model Rochester Electronics LLC UVPROM, 32KX8, 350ns, CMOS, CQCC32, CERAMIC, LCC-32

A01-350nS-B datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
A01-350nS-B A01-350nS-B ECAD Model RCD Components ACTIVE (DIGITAL) DELAY LINE Original PDF

A01-350nS-B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: Subject To Change Without Notice Rise, Time • 2,3 250NS 300NS 350NS 0447-0050-09 , 200NS 250NS 300NS 350NS 400NS 450NS 500NS 8NS 8NS 2,3 8NS 8NS 8NS 8N S 8NS 8N S , A447. 12 B E L FUSE INC./198 VAN V O R S T S T R E E T / J E R S E Y CITY, NJ 07302/(201) 432-0463


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PDF 20MATYP 045REF. 125NS 150NS 175NS 200NS 250NS 300NS 350NS 400NS
74S132

Abstract: AD346 AD585 long range gold detector circuit diagram FL 14-12
Text: 350ns Acquisition Time to ±0.01 % Aperture Uncertainty 250ps ADSHM-5K Ultra Fast 250ns Acquisition , Simultaneous Sample & Hold Analog Delay & Storage GENERAL DESCRIPTION The ADSHM-5 is a new ultra-fast ( 350ns , application is only 350ns max:. Further, the Small Signal Bandwidth has been improved from 5MHz to 12MHz , Diagram Acquisition Time Ta = ADSHM-5 = 350ns ; Ta = ADSHM-5K = 250ns FEATURES High Speed at Low Cost 8


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PDF AD346 400ps AD585 32-Pin -100ns 350ns; 250ns 750ns 74S132 AD585 long range gold detector circuit diagram FL 14-12
aperture

Abstract: HTS-0010
Text: Very High Speed ADSHM-5 Page 2nd Source-Replaces All SHM-5 Series Vol. II Fast 350ns Acquisition Time to ± 0.01% 14-11 Aperture Uncertainty 250ps ADSHM-5K Ultra Fast 250ns Acquisition Time to ±0.01% 100ns Acquisition Time to ±0.1% Wide 12MHz Bandwidth 300V |is Slew Rate Super Low 2nA Input Bias Current HTS-0010 Aperture Jitter of 5ps Acquisition Time 10ns Output Current ±40mA Slew Rate 300V/|is Vol. I 14-49 14 SAMPLE/TRACK-HOLD AMPLIFIERS VOL. II, 14-5


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PDF 350ns 250ps 250ns 100ns 12MHz HTS-0010 14-5to aperture HTS-0010
PE4648

Abstract: k417
Text: Times: 250, 300 or 350ns (max.) ' Co-fired version available Q4 '88. DPE4648S DPE4968S DPE41288S , /0 7 MB4 | MB5 | MB6 | MB7 MT3 MT6 | MT7 BE2-I B B - BOE - BWE - BOE , TEB-TE7 OE- WE- U3 244 B BOE -~ IW E 1/00-1/07- U6 BEN- 645 T BDIR - A0-A7- U4 244 B - BA0-BA7 A8-A14 - U5 244 B - BA8-BA14 XI/OOXI/07 D *Decorder_B=* Buffer , BWBA14 - X I/08- - _ CE- A15-A17- TDIR 1/08-1/015U4 244 B U2 645 T - W/08


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PDF 32KX8S 300ns 250ns 350ns PE4648 k417
KSB1149

Abstract: No abstract text available
Text: < 350ns , duly Cycle<2% Pulsed h fe (1) CLASSIFICATION Classification O Y G hFE1 2000 - 5000 4000 -


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PDF KSB1149 -800MA^
JD25t

Abstract: DPJ 014 DPE45128S-300M A6626 ci cef BBUF
Text: A11 24 DE 23 A10 [22 CE 121 I/07 120 I/06 ,19 I/05 ,18 I/04 17 I/03 NOTE: Pin 2 b A16 unless noted , €” U2 138 D A0-A7- U4 244 B BAO-BA7 — TÉ5-TÊ7 A8-A14 I/00-I/07-BA8-BA14 BEÑ- BDIR- — Xl , 244 B AO-A7 — U4 244 B BA0-BA7 A8-A14- U5 244 B — BA8-BA14 D-Decorder_B-Buffer/Unedriver , Respective Manufacturer DENSE-PAC MICROSYSTEMS D7E » I ^STMIS □ □□□nD B f DC OPERATING , °C DPE4648S-300C 300ns 0 to 70"C DPE4648S-350C 350ns 0 to 70°C DPE4648S-250I 250ns -40 to 85°C DPE4648S


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PDF 32KX8S DPE45128S* DPE45129S 2S-250I 250ns DPE8M612S-300I 300ns DPE8M612S-350I 350ns DPE8M612S-250M JD25t DPJ 014 DPE45128S-300M A6626 ci cef BBUF
Not Available

Abstract: No abstract text available
Text: DPE41288S DPE51288S • Fast Access Times: 250, 300 or 350ns (max.) • Available Cuaranteed O , Ü ET, Ü E B Top, Bottom Output Enables • Power Up/D ow n Protection Circuitry â , /OO- —Xl/O - B \0-BM4— XI/OO- — X I/07 CË — A15-A18 — U4 244 B — U2 138 D _ - TE0-TE7 BA0-BA7 A8-A14 — OE—_ , WE- U5 244 B U3 244 B — BÜÊ 1/00-1/07-— BA8-BA14 BEN — BDIR — U6 645 T D ” D ecord er B


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PDF deterE42568S-300I DPE42568S-250M DPE42568S-350M DPE45128S-250C DPE45128S-350C DPE45128S-300I DPE45128S-250M DPE45128S-350M DPE45129S-250C DPE45129S-350C
AD566AJN

Abstract: AD566AKD AD566A AD565AKN AD565AK AD565AJQ AD565AJN AD565AJD AD565AJCWG AD565A
Text: max. for the AD565A and 350ns max. for the AD566A. This high speed and accuracy makes the AD565A and , full scale) +25° C ±'/4 ±'/2 (0.006) (0.012) ±'/ b ±y* (0.003) (0.006) LSB (% of F.S.) Tmin to , settling time to 0.01% (±1/aLSB) for the AD565A is 250ns and 350ns for the AD566A. 13.5V NEGATIVE SUPPLY , . Figures 4(a), 4( b ), and 4(c) show how to connect the AD565A for both unipolar and bipolar voltage outputs. The connections for the AD566A are shown in figures 5(a), 5( b ), and 5(c). The preferred trimming


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PDF AD565A AD566A 12-bit 250ns 350ns AD566A. AD566AJN AD566AKD AD565AKN AD565AK AD565AJQ AD565AJN AD565AJD AD565AJCWG
Not Available

Abstract: No abstract text available
Text: O tr íl RECTIFIER' 375kV ' 625mA> 350ns 8PF37 January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com QUICK REFERENCE DATA V If trr Ir r AXIAL LEADED HERMETICALLY , characteristics (@ 25°C unless otherwise specified) = 3750V = 625mA = 350nS = 0.25nA ABSOLUTE MAXIMUM , , 3.75kV, 625mA, 350ns 8PF37 January 7, 1998 CHARACTERISTICS (@ 25°C unless otherwise specified , MITCHELL ROAD NEWBURY PARK CA 91320 350ns


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PDF 375kV 625mA 350ns 8PF37 TEL805-498-2111 625mA 625mA,
Not Available

Abstract: No abstract text available
Text: For I m m M e A ssista n t, Costaci Your L m l Salts/arson SHC803BM, CM SHC804BM, CM IR W - B , . • 350ns max ACQUISITION TIME • ±0.01% THROUGHPUT NONLINEARITY • 150ns max SAMPLE-TO-HOLD , a 10V signal change in less than 350ns to ±1/2LSB at 12 bits. Throughput nonlinearity Buffer , ddnst: PO B oi IMO# TU : (602) 746-1111 • TWl: «10-952-1111 . C tM : BBRCORP • 8.6 The  , MIN TYP MAX UNITS SAM PLE/HO LD M PU TS (w ithout Input B uffer) | ±11 1.00 V kQ


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PDF SHC803BM, SHC804BM, 12-bit 350ns 150ns SHC803) 24-PIN SHC803 SHC804 12-bit
Not Available

Abstract: No abstract text available
Text: RECTIFIER, 2.5kV, 800mA, 350ns 11PF25 January 7, 1998 TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE , = 2500V = 800mA = 350nS = l| i A ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise specified , 91320 RECTIFIER, 2.5kV, 800mA, 350ns 11PF25 January 7, 1998 CHARACTERISTICS (@ 25°C unless , ) © 1997 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 lI 2-5kV, 800mA, 350ns 11PF25


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PDF 800mA, 350ns 11PF25 800mA
mvd 01

Abstract: chn 808 SHM-LM2 SHM-LM-2 409m SHM-1C-1 chn 807 SHM-1C SHM-LM MV-1606M
Text:  B * INNOVATION and EXCELLENCE MV/MVD Series Low ON Resistance CMOS, Analog Multiplexers FEATURES • ±0.01% accuracy • Low "ON" resistance • Break-before-make switching • Dielectrically isolated CMOS technology • Single-ended or differential inputs • Fast settling times â , ±0.01%) 2.8ps® 2.4ps 2.8ps® 2.4ps Turn ON Time 350ns 300ns 350ns 300ns Turn OFF Time 250ns 220ns 250ns 220ns , MV/MVD Series B PERFORMANCE GRAPHS 350 100pA 10pA 25° 60° 75° 100° 125° TEMPERATURE <°C


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PDF 350kHz 16-channel assistance800-233-2765 MV-808, MVD-409 MV-1606, MVD-807 MV-808 MV-1606 mvd 01 chn 808 SHM-LM2 SHM-LM-2 409m SHM-1C-1 chn 807 SHM-1C SHM-LM MV-1606M
2SC1474

Abstract: 2SC897 2SA743B 2SC1403 2SC1445 2SC1402 2SC1116 2sc1826 2SC1115 2sc1419
Text: « : • (ta^zs'c}:-'. n s « a « m m m a Vas vm> le Pc B fa»®*« '« 4 t z. k, U* m hr. w» «p. im* (m fa fr* (Me) e» B ) m n m m (mA) B m TYPE NUMBER ORIGINAL MANUFACTURER USES MATERIAL AND STRUCTURE , ) VCB(V) VCE(V) Ici mA) VCB(V) M m A) 2SA743 B ïl RF.PA Si. E -50 - 4 -1A 8 W (rc=2TC) 150 â , ­ r < 350nS , //< 150nS iiii< 200nS >40 * 3.5 138 • 750 H ',[£ RF. AF.LN Si. E -50 - 5 -50 250


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PDF 2SCI450 2SC1826 2SC1827 2SC198S 2SC1986 600pS 2SC1474 2SC1474 2SC897 2SA743B 2SC1403 2SC1445 2SC1402 2SC1116 2SC1115 2sc1419
HM 1211

Abstract: 2758 eprom HM-6758 HM-6758H harris eprom harris hm-6716 HARRIS PACKAGE LOGIC harris 6716 HM-6611 HM-6716
Text: X 8 CMOS UV EPROM Features 500/LlW MAX. 50mW/MHz MAX. 350ns MAX. 5 VOLT VCC 2 STD. TTL LOADS â , €¢ Any characters desired (none necessary) except " B ". • Data words beginning with the first word , : 1. The character " B " denoting the beginning of a data word. 2. A sequence of characters, only "P" , data word. • No extraneous characters of any kind may appear within a data word (between any " B " and , " B ", and beginning the word again with a new " B ". • Any text of any kind (except the character " B


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PDF HM-6758 500/LlW 50mW/MHz 350ns HM-6758 HM-6611 HM-7649 HM 1211 2758 eprom HM-6758H harris eprom harris hm-6716 HARRIS PACKAGE LOGIC harris 6716 HM-6716
Not Available

Abstract: No abstract text available
Text: HT r1i^[Tn RCIF R 75kV A Mh = ET IE’3- ’625m’ 350ns January 7, 1998 QUICK REFERENCE DATA V r If trr Ir = 3750V = 625mA = 350nS = 0.25nA 8PF37 TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER , , 625mA, 350ns 8PF37 January 7, 1998 CHARACTERISTICS (@ 25°C unless otherwise specified , CA 91320 lI 8PF37 3.75kV, 625mA, 350ns January 7, 1998 ASO Pf (Watts) VF (Volts


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PDF 350ns 625mA 8PF37 625mA,
Not Available

Abstract: No abstract text available
Text: IDIOTI ;sc=ü January 7, 1998 RECTIFIER, 2.5kV, 800mA, 350ns 11PF25 TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER , trr Ir = = = = 2500V 800mA 350nS 1|iA ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise , 91320 ;sc=ü January 7, 1998 RECTIFIER, 2.5kV, 800mA, 350ns 11PF25 CHARACTERISTICS (@ 25 , j RECTIFIER, 2.5kV, 800mA, 350ns 11PF25 January 7, 1998 AM B12 (Watts) Pf Fig 2


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PDF 800mA, 350ns 11PF25 800mA 350nS
TS 4142

Abstract: 18Oi S03 pnp KSD401 KSD526 samsung tv
Text: STATIC CHARACTERISTIC -10 -Oi -OB |-a7 g-OJS h-05 B -04 S-03 £ MM — i il ! i ; i i >â , .Th*nn«l imtatìoa 8/ B Hnitatton^ -5 -10 -30 .-50 -100 -300 Vo (V). COUfCIOfUMtmR VOUME T , 70-140 120-240 SS^ SAMSUNG SEMICONDUCTOR 77 SAMSUNG SEMICONDUCTOR INC 1J1Ê 0.| 7^4142 0007503 b , -Ib2= -3mA 1 US Fall «me tf Vcc-—50V 1 (JS •Pulse Test;. PW< 350ns , Duty Cycle<2% hFE(1


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PDF ksb546 KSD401 -200V O-220 ksb601 r-33-Ã TS 4142 18Oi S03 pnp KSD401 KSD526 samsung tv
Dynamic Measurements Corp

Abstract: t736 Dynamic Measurements
Text: DYMEC 41 30DMISti 0000503 J~T-73-65 SAMPLE AND HOLD AMPLIFIERS VERY HIGH SPEED MODELS 1410 — 1411 LOW ACQUISITION TIME 200nS max . 0,1 % accuracy 350nS max . . . 0.01% accuracy EXCELLENT , ) B + 15V 0.35 (0.89) C -15V 0.45 (1.14) D Common 0.55 (1.40) E Offset Adjust 1.25(3.18) F Offset , step input 600nS max 650nS max To 0.1% for 10V step input 350nS max 400nS max Input Bias Current , 0.01 % for 20V input step 200nS max 350nS max SWITCHING to 0.01% for 10V input step 100nS max 350nS


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PDF 30DMISti T-73-65 200nS 350nS 100nS 100pS Dynamic Measurements Corp t736 Dynamic Measurements
IR 652 H

Abstract: RG86
Text: RECTIFIER, 12kV, 225mA, 350ns 2PF140 January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED HIGH VO LTAG E FAST RECTIFIER DIODE , 2 5 °C Q U IC K REFERENCE DATA Vr = = · IF · trr = · Ir = 12kV 225mA 350nS 5(iA unless , MIN MAX MAX ,177 4.50 26.0 1.02 . . .374 9.50 .053 1.35 DIM * A B C 0 NOTE . - · NOTE Due , NEWBURY PARK CA 91320 RECTIFIER, 12kV, 225mA, 350ns 2PF140 January 7, 1998 CHARACTERISTICS


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PDF 225mA, 350ns 2PF140 TEL805-498-2111 225mA 350nS 2PF140 IR 652 H RG86
TL431 model SPICE

Abstract: SG6848 4n35 spice DS1N4148 sg6848 spice model TL431 sg6848 model SPICE 4n35 in inverter Pressman inverter CTB
Text: ,HV Vca1 5V Vreset 5V Vlimit Vsense S6 CA2 Vdelay ISAW 350ns t Vin2 , 3 PWM IC RC PWM 350ns 5V 5V/3A PWM SPICE EMI V2 Iin Vdelay Isec Vo1 Vdc 16 Im Vss tdelay= 350ns vo 12 Co1 1000u Do 5KQ40 , SWITCH 37 A12 INVERTER A11 AND2 Xdelay UTD TD = 350ns Vreset Vin2 A13 INVERTER , 1.667 17 8 Rb 20K ( b ) ( b )MOS MOS (IO=3A) 68KHz (IO=0.3A) 43KHz (IO


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PDF TL431 IRF420 sg6848 1N4148 68KHz 43KHz 13KHz 43KHz) 13KHz) 68KHz) TL431 model SPICE SG6848 4n35 spice DS1N4148 sg6848 spice model TL431 sg6848 model SPICE 4n35 in inverter Pressman inverter CTB
Dynamic Measurements Corp

Abstract: Dynamic Measurements
Text: €” 1411 LOW ACQUISITION TIME 200nS max . 0,1 % accuracy 350nS max . . . 0.01% accuracy EXCELLENT , ) B + 15V 0.35 (0.89) C -15V 0.45 (1.14) D Common 0.55 (1.40) E Offset Adjust 1.25(3.18) F Offset , 0.01% for 10V step input 600nS max 650nS max To 0.1% for 10V step input 350nS max 400nS max Input , SAMPLE to 0.01 % for 20V input step 200nS max 350nS max SWITCHING to 0.01% for 10V input step 100nS max 350nS max 'When 1410 is driven by a near zero-impedance source DIGITAL Type TTL compatible, 2


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PDF 30DMISti T-73-65 200nS 350nS 100nS 100pS Dynamic Measurements Corp Dynamic Measurements
1997 - 12KV

Abstract: 2PF140 motorola 350NS
Text: RECTIFIER, 12kV, 225mA, 350ns January 7, 1998 © 1997 SEMTECH CORP. 2PF140 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, 12kV, 225mA, 350ns 2PF140 January 7, 1998 © 1997 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, 12kV, 225mA, 350ns 2PF140 January 7, 1998 © 1997 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 Semtech


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PDF 225mA, 350ns 2PF140 12KV 2PF140 motorola 350NS
g84 diode

Abstract: No abstract text available
Text: ID IO T I is ti January 7, 1998 RECTIFIER, 6kV, 500mA, 350ns PF75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com QUICK REFERENCE DATA · · · AXIAL LEADED HERMETICALLY SEALED , MAX . . .177 4.50 1.04 26.5 .295 7.50 .053 1,35 DIM " A B C D NOTE - D - Weight = , , 6kV, 500mA, 350ns PF75 January 7, 1998 CHARACTERISTICS (@ 25°C unless otherwise specified , 91320 ^ C T IF IE R , 6kV, 500mA, 350ns PF75 January 7, 1998 A17 Pf (Watts) TA (°C


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PDF 500mA, 350ns TEL805-498-2111 500mA 35QnS g84 diode
12KV

Abstract: HIGH VOLTAGE DIODE 12kv switching 12kv
Text: ID IO T I is ti January 7, 1998 RECTIFIER, 12kV, 225mA, 350ns 2PF140 TEL:805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER , MIN MAX MAX . ,177 4.5Q . 1.02 26.0 . . .374 9.50 .053 1.35 MIN DIM * A B C 0 NOTE . . . - · , , 12kV, 225mA, 350ns 2PF140 (@ 25°C unless Otherwise specified) Symbol 2PF140 Unit Average , RECTIFIER, 12kV, 225mA, 350ns 2PF140 Pf (Watts) VF (Volts) To <°C) Fig 2. Forward voltage


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PDF 225mA, 350ns 2PF140 225mA 35QnS 2PF140 12KV HIGH VOLTAGE DIODE 12kv switching 12kv
Not Available

Abstract: No abstract text available
Text: RECTIFIER, 6kV, 500mA, 350ns January 7, 1998 QUICK REFERENCE DATA • • • • PF75 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE FAST RECTIFIER DIODE V r= 6000V If= 500mA trr= 350nS Vf= 11.2V Low reverse , temperature range Top -65 to +165 °C MECHANICAL 1 r A DIM ' A B C D D DIMENSIONS , ROAD NEWBURY PARK CA 91320 [ j ^ y ^ |~ j ~ l | RECTIFIER, 6kV, 500mA, 350ns PF75


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PDF 500mA, 350ns TEL805-498-2111 500mA
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