The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
SN75ALS175NSLE SN75ALS175NSLE ECAD Model Texas Instruments Quadruple Differential Line Receiver 16-SO 0 to 70
SN75ALS175NSRE4 SN75ALS175NSRE4 ECAD Model Texas Instruments QUAD LINE RECEIVER, PDSO16, GREEN, PLASTIC, SOP-16
CD74AC175NSR CD74AC175NSR ECAD Model Texas Instruments AC SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, PDSO16, GREEN, PLASTIC, SOP-16
SN74F175NSR SN74F175NSR ECAD Model Texas Instruments Quadruple D-Type Flip-Flops With Clear 16-SO 0 to 70
SN75ALS175NSRG4 SN75ALS175NSRG4 ECAD Model Texas Instruments QUAD LINE RECEIVER, PDSO16, GREEN, PLASTIC, SOP-16
SN74S175NSRG4 SN74S175NSRG4 ECAD Model Texas Instruments S SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, PDSO16, GREEN, SOP-16

A01-175nS-B datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
A01-175nS-B A01-175nS-B ECAD Model RCD Components ACTIVE (DIGITAL) DELAY LINE Original PDF

A01-175nS-B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
SHM-LM2

Abstract: SHM-LM-2 MX 232 SHM-LM CA3 9 01 MX-1606 MX-818 MX-1616C 818C ADS-117
Text: OUT 2 BOUT 17 -VS 3 4B IN 16 4A IN 4 3BIN 15 3A IN 5 2BIN 14 2A IN 6 1 B IN 13 1A IN 7 GND , (max.) Enable Delay OFF (max.) Break-Befoie-Make Delay ±0.01% 250ns 800ns 130ns © 175ns 175ns 20ns ±0.01% 250ns 800ns 130ns© 175ns 175ns 20ns POWER REQUIREMENTS Rated Power Supply Voltage Quiescent Current , ) to B OUT (pin 2) and using CA3 (pin 14) as a digital address input. To program the MX-1616 for , programmed as a single-ended 8-channel multiplexer by connecting A OUT (pin 18) to B OUT (pin 2) and using


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PDF MX-1616, MX-818 MX-1616 MX-818 25MHz MA02048-1194 MX-1616 SHM-LM2 SHM-LM-2 MX 232 SHM-LM CA3 9 01 MX-1606 MX-1616C 818C ADS-117
Not Available

Abstract: No abstract text available
Text: 19] BEN Single Event Upset (SEU) Immunity: <1 x 10‘10 Errors/Bit/Day B 04 [ 3 ia j A01 (Typ) AI2 Q Ï7 | BI4 B 03 SEU LET Threshold , • Input Current < 1(iA at VOL, VOH AEN 1 20 I vcc A ll 2 19 I BEN B 04 3 18 I A01 AI2 4 17 I BI4 B 03 5 16 I A 02 AI3 6 15 I BI3 , • Fast Propagation Delay. 17.5ns (Max), 12ns (Typ) Description


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PDF ACTS240MS MIL-PRF-38535 MIL-STD-1835 CDIP2-T20, 125kA 05A/cm2 110um
Not Available

Abstract: No abstract text available
Text: Fast Propagation Delay. 17.5ns (Max), 12ns (Typ) AM [2 B 04 [3 AI2 19] BEN is ] A01 Ï 3 BI4 [7 Q[ IT B 03 [5 AI3 B 02 ÏH A0 2 IS] BI3 14] A 03 13] BI2 , CDFP4-F20, LEAD FINISH C TOP VIEW AEN E AM C B 04 C 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 , Flatpack (K suffix) or a Dual-ln-Line Ceramic Package (D suffix). AI2 E B 03 E AI3 C B 02 C AI4 C BOI C


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PDF ACTS240MS MIL-STD-1835 CDIP2-T20, MIL-PRF-38535 05A/cm2
3001C

Abstract: ADG411 ADG412 ADQ411
Text: -245- ADG411/ADG41 2 SPST cmost+P^ • -j^-ivn v K) A D i"7.y FSPST(*S*S) CMOSfgfior-t-n ■X-f .y^T-, ADG411t±'» BtMSSf, ADG412lï«B#l5fl[I]!S&T:'25?>. X 175ns , î0ff= 145ns -35fiW O fg m M- -. 4 4 y O-^W X • t7t7 • X -i i'tftfF Od-y.y y A7J(±TTL , 'C ( B /'v — — 55-F 125 °C (T/*- — 65-r 150°C 3001C ■10mW/'C (r„>75'C) y s V) 'Va V


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PDF ADG411/ADG41 ADG411t ADG412là 175ns, 145ns -35fiW 16tiV 300fi, 300i2, 3001C ADG411 ADG412 ADQ411
Not Available

Abstract: No abstract text available
Text: to ± 0 .0 1 % • P ro g r a m m a b le S E o r d iff e re n tia l in p u t m o d e s • B r e a k - b e fo r e - m a k e s w itc h in g • D ie le c tr ic a lly is o la te d C M O S te c h n o , -1616 PIN FUNCTION PIN 1 2 +VS BOUT 28 27 3 26 4 N.C. 8 B IN -V s 8A IN , CA2 9 Figure 1. Functional B lo ck Diagram (MX-1616 P inout Shown) 2b51Sbl 0003b2b IbT NOTES , ultiplexers 5- B D A TE L M X-1616, M X-818 ABSOLUTE MAXIMUM RATINGS PARAMETERS MX


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PDF MX-1616 MX-818 25MHz 78kHz DAC-HK12, 12-bit X-1616, MX-818 MX-818C
harris 2540

Abstract: No abstract text available
Text: ACTS240T Semiconductor D a ta S h e e t J a n u a ry 1999 F ile N u m b e r 461 a High Reliability, Radiation Hardened Octal Buffer/Line Driver, Three-State, Inverting H arris , . 17.5ns (Max), 12ns (Typ) 4.5V to 5.5V Specifications Specifications for Rad Hard QML devices , AEN AM B 04 AI2 B 03 AI3 Ordering Information ORDERING NUMBER 5962R9671701TRC ACTS240D/Sample , ) -55 to 125 25 -55 to 125 B 02 AI4 BOI GND E E E E E E E E E ÜI BEN E 5 a A01 a BI4 Ü A


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PDF ACTS240T 100kRAD ACTS240T 1-800-4-HARRIS harris 2540
Not Available

Abstract: No abstract text available
Text: /2 Min • Fast Propagation D e la y . 17.5ns (Max), 12ns (Typ) Pinouts Detailed , on our website. http://w ww.sem i.harris.com /quality/m anuals.htm B 04 Ordering Information B 02 AI2 B 03 AI3 AI4 ORDERING NUMBER PART NUMBER 5962R9671701TRC ACTS240DTR


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PDF ACTS240T 100kRAD MIL-PRF-38535 1-800-4-HARRIS
trx44

Abstract: bicolor 2 leaD LED-BICOLOR 150D 206H trd24
Text: : 150D Vrms TURNS RATIO: (PRI/SEC) 1CT:1CT ±2% OCb 350uH MIN ffllOOKHz 100mV flmADC Rise Time: 1.75ns , TRX2- 4 TRX3+ 5 TRX3- 7 TRX44 8 TRX4- CABLE SIDi: m Shield 5 .Urft LEO 11 12 o- B - .Right , (2HOleS) 10 0.128±0.003 (2 Holes) 11 0.100- B .0.650 Max. _□_EH_ J1 JS J=a_f=L Right -W- ir? I


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PDF 350uH 100mV 1MHz-100MHz 0100-125MHz -30MHz 40MHz B50MHz B60-8DMHz -10dB 30MHz trx44 bicolor 2 leaD LED-BICOLOR 150D 206H trd24
Not Available

Abstract: No abstract text available
Text: Fast Propagation Delay. 17.5ns (Max), 12ns (Typ) AEN AM B 04 20 PIN


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PDF ACTS240MS MIL-STD-1835 CDIP2-T20, MIL-PRF-38535 ACTS240MS 125kA
Not Available

Abstract: No abstract text available
Text: 0447-0350-08 0447-0400-08 0447-0450-08 0447-0500-08 Total belay 1, 3 Rise Time 125NS 150NS 175NS , A447. 12 B E L FUSE INC./198 VAN V O R S T S T R E E T / J E R S E Y CITY, NJ 07302/(201) 432-0463


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PDF 20MATYP 045REF. 125NS 150NS 175NS 200NS 250NS 300NS 350NS 400NS
DG413DY

Abstract: DG411
Text: tf^tms DG411, DG412, S Semiconductor y y DG413 Monolithic Quad SPST, August 1997 CMOS Analog Switches Features • ON-Resistance.<35ß Max • Low Power Consumption (Pq).<35|^W • Fast Switch ing Action - toN. < 175ns - toFF. <145ns • Low Charge Injection • Upgrade from DG211/DG212 • TTL, CMOS Compatible • Single or Split , faster switch time (toN < 175ns ) compared to the DG211 or DG212. Charge injection has been reduced


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PDF DG411, DG412, DG413 175ns 145ns DG211/DG212 DG411 DG211 DG413DY
5962F9671701VRC

Abstract: 5962F9671701VXC ACTS240 ACTS240HMSR ACTS240MS smd A04
Text: Propagation Delay. 17.5ns (Max), 12ns (Typ) Description The Harris ACTS240MS is a Radiation


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PDF ACTS240MS MIL-PRF-38535 125kA 125kA 05A/cm2 5962F9671701VRC 5962F9671701VXC ACTS240 ACTS240HMSR smd A04
2000 - HGTG30N60A4

Abstract: HGT1Y30N120CN HGTG20N60A4D HGTD3N60A4S HGTD7N60C3S HGTD7N60B3S HGTP5N120BND HGTD3N60C3S HGTD3N60B3S HGT1S3N60A4S
Text: 2.1V 175ns 3A TO-252AA (D-PAK) HGTP3N60B3 2.1V 175ns HGT1S3N60B3S 2.1V 175ns TO-247 HGTD3N60C3S 2.0V 275ns 7A HGTD7N60A4S 2.7V 85ns HGTP7N60A4 2.7V 85ns HGTD7N60B3S 2.1V 175ns HGTP7N60B3 2.1V 175ns HGTD7N60C3S 2.0V 275ns HGTP7N60C3 2.0V 275ns 12A HGTG7N60A4 2.7V 85ns HGT1S7N60B3S 2.1V 175ns HGTP12N60A4 2.7V 95ns HGTP12N60B3 2.1V 175ns HGT1S12N60B3S 2.1V 175ns , 110oC HGT1S3N60A4DS 2.7V 100ns HGT1S3N60B3DS 2.1V 175ns HGT1S3N60C3DS 2.0V 275ns HGTP7N60A4D


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PDF 110oC O-220AB O-263AB HGTD3N60A4S 100ns HGTP3N60A4 HGT1S3N60A4S HGTD3N60B3S HGTG30N60A4 HGT1Y30N120CN HGTG20N60A4D HGTD3N60A4S HGTD7N60C3S HGTD7N60B3S HGTP5N120BND HGTD3N60C3S HGTD3N60B3S HGT1S3N60A4S
Not Available

Abstract: No abstract text available
Text: . < 175ns - to F F . , analog O N resista nce (< 35 Q ) and faster sw itch tim e (toN < 175ns ) co m p a re d to the DG211 o r , e s are b ilate ral, e q u a lly m atche d for AC or b id ire ctio n a l sig na ls. T h e O N re , g “b re a k-b e fo re m a ke ” o r “ m a ke - b e fo re - b re a k ” o p e ra tio n w ith a m , DG411EJ (Note) B * DG 411EY (Note) v+ F16.3 E16.3 16 Ld SOIC M16.15 -40 to 85


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PDF DG411, DG412, DG413 DG411 DG211 175ns
Not Available

Abstract: No abstract text available
Text: Analog Switches N ve b 1994 o mer Description Features • ON-Resistance <35£l Max • Low Power Consumption (P0 <35|iW) • Fast Switching Action ■ton < 175ns ■tgpp <145ns These switches feature lower analog ON resistance (<35Q) and faster switch time (tQN < 175ns ) compared to the , +25°C -0.25 ±0.1 0.25 nA Full -5 - +5 nA Channel ON Leakage Current, b , A2 0.115 0.195 2.93 4.95 - B 0.014 0.022 0.356 0.558 - B1


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PDF DG411, DG412 175ns 145ns 175ns) DG211 DG212. DG211/DG212 DG411 M3DSE71
Not Available

Abstract: No abstract text available
Text: 175ns - toFF ( M a x ) . 145ns , switch time (toN < 175ns ) compared to the D G 211 or DG212. Charge injection has been reduced , 4.95 - -ABASE PLANE SEATING PLANE V D 1- A2 P i D1 B1- HI B A1 eC , control. D1 0.005 - 0.13 - 5 E 0 - 0 .0 1 0 ( 0 .2 5 ) © C A B (S) 0.300 , NOTES 1.35 1.75 - 0.10 0.25 - B ^ 0 .2 5 (0 .0 1 0 )® C A ® 0.33 0.51


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PDF DG411, DG412, DG413 DG212 175ns 1-800-4-HARRIS
2013 - Not Available

Abstract: No abstract text available
Text: ): Crosstalk: Circuit Part Number Schematic TG1G-S231NVRL A TG1G-S232NVRL B TG1G-E233NVRL A TG1G-E234NVRL B 1,500 Vrms 350 µH 1CT:1CT 1.75ns -40dB typ. [33-20log (F/100MHz)]dB , for more information. NV Package Schematic A Schematic B Electrical Specifications @ 25 , guide for more information. NV6 Package Schematic A Schematic B Schematic C Electrical , µH 6,297,720 B1 6,320,489 B1 1CT:1CT 6,344,785 B1 6,662,431 B1 1.75ns -40dB typ. (not


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PDF IEEE802 10/100/1000BASE-TX 100KHz, 100MHz) TG1G-S231NVRL TG1G-S232NVRL TG1G-E233NVRL TG1G-E234NVRL F/100MHz) 1-100MHz)
2004 - TG1G-E233NV

Abstract: TG1G-E234NV TG1G-S202NV6 TG1G-E201NV6 TG1G TG1GE201 TG1G-S232NV Gigabit 33-20LOG TG1G-S231NV
Text: . NV Package Schematic A Schematic B Patented Construction US Pat Nbrs: 5,656,985 6,297,721 , -1.1dB max B -1.1dB max A -1.1dB max B -1.3dB max 1-40MHz -18dB -18dB -18dB -18dB 1,500 Vrms 350 µH 1CT:1CT 1.75ns -40dB typ. [33-20log (F/100MHz)]dB typ Return Loss (min) 60MHz , . NV6 Package Schematic A Schematic B Schematic C Patented Construction US Pat Nbrs: 5,656 , : Circuit Insertion Loss Part Number Schematic (1-100MHz) TG1G-S201NV6 A -1.1dB max TG1G-S202NV6* B


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PDF IEEE802 10/100/1000BASE-TX TG1G-S231NV TG1G-S232NV TG1G-E233NV TG1G-E234NV 1-100MHz) TG1G-S201NV6 TG1G-S202NV6* TG1G-S205NV6 TG1G-E233NV TG1G-E234NV TG1G-S202NV6 TG1G-E201NV6 TG1G TG1GE201 TG1G-S232NV Gigabit 33-20LOG TG1G-S231NV
2002 - 628LJN-1471

Abstract: 628LJN-1548 628BIN-1010 TOKO 27mhz 628BIN-1015 628BIN-1052 TOKO 628LJN-1548 628BJN-1022 628BIN-1014 628LJN-1050
Text: 1kohm 7 628BIN-1015 4.43MHz BPF 175ns 1kohm 8 628BIN-1304 4.43MHz BPF 200ns 1kohm 9 , 170ns 200ns 200ns 260ns 440ns 175ns 1 Input impedance 1kohm 1kohm 1kohm 1.2kohm 1kohm


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PDF 15MHz 510pF 628LJN-1471 628LJN-1538 628LJN-1548 628LIN-1013 628LJN-1050 628LJN-1471 628LJN-1548 628BIN-1010 TOKO 27mhz 628BIN-1015 628BIN-1052 TOKO 628LJN-1548 628BJN-1022 628BIN-1014 628LJN-1050
XFGIB100

Abstract: No abstract text available
Text: Schematic: LOWER ROW Electrical Specifications: ®25®C ISOLATION: 1500 Vrms TURNS RATIO: (PRl/SEC) 1CT:1CT ±2% OCL: 350uH MIN ©lOOKHz 100mV BmADC Rise Time: 1.75ns Max. INSERTION LOSS , – 0.098 1 3 i z Io i â i ; 1° S Z 4 « í B Z + 6 B 1 3 i Z Io i è i ! 1° g z « » ' < " DOC. REV. A/1 B 1.10 LO V CM CN O T m o q o -H tú tJ- \ s XFRMS XFGIGB ( -STACK4-4 YYWW a -IT O i , BmADC Rise Time: 1.75ns Max. INSERTION LOSS: -I.OdB MAX 81 MHz-1OOMHz — 1.5dB MAX 0)100 â


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PDF 350uH 100mV 1MHz-100MHz 125MHz -16dB 1-30MHz 40MHz 50MHz -10dB 100MHz XFGIB100
x818

Abstract: 225nsec
Text: B D A T E L IN N O V A T IO N a n d E X C E L L E N C E M X -1616, M X -818 High-Speed, CMOS , ctional B lock Diagram (M X -1616 Pinou t Sh ow n ) 12 11 10 CAO CA1 NOTES: CA - Channel address , ) to B OUT (pin 2) and using CA3 (pin 14) as a digital address input. To program the MX-1616 for , programmed as a single-ended 8-channel multiplexer by connecting A OUT (pin 18) to B OUT (pin 2) and using , 1[iA 2Q\iA 3 bits Logic "0" 250ns 000ns 130ns (4 175ns 175ns 20ns 250ns 800ns 130ns:* 175ns


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PDF MX-1616 MX-818 25MHz 12-bit X-1616, X-818 X-818C X-1616C x818 225nsec
GOS-620

Abstract: 230V DC to 5V DC GOS-622G GCP-210LC GOS-635G 635-G X10MAG 220v to 5v dc 230v AC output GOS622g
Text: -635G) DC ~ 20MHz ( GOS-622G) DC ~ 10MHz at 1~ 2mV/DIV 10ns (35ns at 1mV~2mV/DIV)for GOS-635G 17.5ns (35ns , DC (AC 10Hz) ~20MHz(-3dB) DC (AC 10Hz) ~7MHz(-3dB) at x 5MAG 17.5ns (50ns at x 5MAG) Approx. 1M


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PDF 20MHz, 35MHz, GOS-635G) GOS-622G) GOS-635G/GOS-622G GOS-620 35MHz 20MHz GOS-620 230V DC to 5V DC GOS-622G GCP-210LC GOS-635G 635-G X10MAG 220v to 5v dc 230v AC output GOS622g
PBSS4140

Abstract: No abstract text available
Text: A +VIN B C D E REVISION HISTORY +VIN E9 ECO REV _ +VIN + , * 0.625 325ns 250ns* 175ns 180° INTVCC JP9 DMAX 4 Q2 BSC036NE7NS3G 5 Q1 OPT , 1.66 1.0* 0.625 3 2 1 325ns 250ns* 175ns 3 2 1 180° 120° R16 S2 G1 3 , CIRCUIT IS PROPRIETARY TO LINEAR TECHNOLOGY AND SUPPLIED FOR USE WITH LINEAR TECHNOLOGY PARTS. A B , -2 DEMO CIRCUIT 2006A-MASTER SHEET 1 Monday, September 30, 2013 E REV. 2 OF 2 A B C


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PDF 220uF 220pF V8P10 PBSS4140DPN LTC3862EUH-2 006A-MASTER PBSS4140
Not Available

Abstract: No abstract text available
Text: ) Fast Switching Action " ^ < 175ns on ■toFF <145ns These switches feature lower analog ON resistance (< 35ft) and faster switch time (tom < 175ns ) compared to the DG201A or DG202. Charge injection


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PDF DG411, DG412 DG413 DG411 DG201A DG202 175ns 145ns 175ns)
Not Available

Abstract: No abstract text available
Text: A D S -926 I ' B M n E L ' 500kHz, 14-Bit, Low-Power Sampling A/D Converter IN N O V A , 9 B IT S 8 BIT 7 7 ANALOG INPU T BIT 8 6 20 B IT 9 ËOC BIT 12 2 , +5V SU PPLY EhSlSbl B IT 10 B IT 11 3 START CONVERT 5 4 BIT 14 (LSB) [□M E L , of ADS-926 Figure 2. ADS-926 Calibration Circuit ■a ts is b i O D D S b ii am 3 , for DIP Data Converters”, for additional information. DM OI ADS-926 S Ï 175ns min


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PDF 500kHz, 14-Bit, 14-Bit 500kHz 24-pin ADS-926 16-bit,
Supplyframe Tracking Pixel