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    FLL57MK Search Results

    FLL57MK FFF Equivalents (1)

    The Form Fit Function (FFF) results will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    FLL57MK SUMITOMO ELECTRIC Device Innovations Inc Check for Price RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET

    FLL57MK Functional Equivalents (1)

    The Functional Equivalents tab will give you options that are likely to match the same function of FLL57MK, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    FLL57MK SUMITOMO ELECTRIC Industries Ltd Check for Price RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET

    FLL57MK Datasheets (1)

    Eudyna Devices
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FLL57MK
    		Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF 98.01KB 4

    FLL57MK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fll57

    Abstract: FLL57MK
    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original     		FLL57MK FLL57MK Un4888 fll57 PDF

    0.1 j100

    Abstract: FLL57MK fll57
    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original     		FLL57MK FLL57MK 0.1 j100 fll57 PDF

    FLL57MK

    Abstract: fll57 fujitsu gaas fet L-band fujitsu gaas fet
    Contextual Info: FLL57MK _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P ^ b = 36.0dBm Typ. High Gain: = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION


    OCR Scan     		FLL57MK FLL57MK FCSI0598M200 fll57 fujitsu gaas fet L-band fujitsu gaas fet PDF

    FLL57MK

    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original     		FLL57MK FLL57MK PDF

    fll57

    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: hadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original     		FLL57MK FLL57MK FCSI0598M200 fll57 PDF

    FLL57MK

    Abstract: fll57 01 j100
    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original     		FLL57MK FLL57MK FCSI0598M200 fll57 01 j100 PDF

    Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original     		FLL57MK FLL57MK FCSI0598M200 PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF