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    FLL357ME Search Results

    FLL357ME Functional Equivalents (1)

    The Functional Equivalents tab will give you options that are likely to match the same function of FLL357ME, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    FLL357ME SUMITOMO ELECTRIC Industries Ltd Check for Price RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET

    FLL357ME Datasheets (1)

    Eudyna Devices
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FLL357ME
    		Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF 79.01KB 4
    SF Impression Pixel

    FLL357ME Price and Stock

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    SUMITOMO ELECTRIC Interconnect Products FLL357ME

    IN STOCK SHIP TODAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Component Electronics, Inc FLL357ME 60
    • 1 $615.38
    • 10 $615.38
    • 100 $461.54
    • 1000 $400.00
    • 10000 $400.00
    		Buy Now

    FUJITSU Semiconductor Limited FLL357ME

    Trans JFET 10V 720mA GaAs Case ME
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FLL357ME 230
    • 1 $321.55
    • 10 $288.29
    • 100 $288.29
    • 1000 $288.29
    • 10000 $288.29
    		Buy Now

    FLL357ME Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FLL357ME

    Abstract: FLL357 fujitsu gaas fet
    Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME FCSI0598M200 FLL357 fujitsu gaas fet PDF

    FLL357ME

    Abstract: L-Band
    Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME L-Band PDF

    FLL357ME

    Abstract: High Power GaAs FET
    Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME Temperat4888 High Power GaAs FET PDF

    FLL357

    Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: hadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME FCSI0598M200 FLL357 PDF

    FLL357ME

    Abstract: fujitsu gaas fet L-band
    Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME FCSI0598M200 fujitsu gaas fet L-band PDF

    Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME PDF

    FLL357ME

    Abstract: FLL357
    Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm Typ. High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    Original     		FLL357ME FLL357ME Temperatur4000 FLL357 PDF

    FLL357ME

    Abstract: fujitsu gaas fet
    Contextual Info: FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-|C|g=35.5dBnn Typ. High Gain: G-|C|g=11.5dB (Typ.) High PAE: riadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to


    OCR Scan     		FLL357ME FLL357ME FCSI0598M200 fujitsu gaas fet PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan     		FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF