FLL200IB-2 Search Results
FLL200IB-2 Functional Equivalents (5)
The Functional Equivalents tab will give you options that are likely to match the same function of FLL200IB-2, but it may not fit your design.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| FLL200IB-2 | FUJITSU Limited | Check for Price | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET |
| FLL200IB-3 | FUJITSU Limited | Check for Price | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET |
| FLL200IB-3 | SUMITOMO ELECTRIC Device Innovations Inc | Check for Price | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET |
| FLL200IB-2 | FUJITSU Semiconductor Limited | Check for Price | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET |
| FLL200IB-3 | SUMITOMO ELECTRIC Industries Ltd | Check for Price | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET |
FLL200IB-2 Datasheets (3)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FLL200IB-2 | Eudyna Devices | L-Band Medium & High Power GaAs FET | Original | 122.12KB | 6 | ||
| FLL200IB-2 | Unknown | FET Data Book | Scan | 100.7KB | 2 | ||
| FLL200IB-2-E1 |
|
FET: P Channel: ID 12 A | Original | 121.98KB | 6 |