ZO 607 TRANSISTOR Search Results

transistor zo 607

Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Contextual Info: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the

NEC JAPAN 237 521 02

Abstract: transistor zo 607 2SC5004
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

NEC NF 932

Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

Contextual Info: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

NEC 1357

Abstract: LA 8873 TRANSISTOR C 4460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

2SC5007

Abstract: 2SC5007-T1
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC JAPAN 237 521 02

Abstract: nec 237 521 02 transistor zo 607 2SC5004
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: SIEMENS Digital Deflection Controller SDA 9064-5 Preliminary Data NMOS IC Features • Pipeline processor structure controls deflection stages • Raster alignment by keyboard or automatically • Adaptable beam current compensation for picture height and width

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

2T6551

Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Contextual Info: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"

SAA3006

Abstract: RC5 IR RC-5 ir remote control HA606 atari st zo 607 transistor pr 606 j 10B3 RC5 command reference
Contextual Info: DEVELOPMENT DATA SAA3006 T h li dni\i h n rt contains- tfd rv -v if iitfu fim L io n .md s p c -C If i c s t i - o n c a r o l u b j w t t o c h S i ’iG G y i l i h r i i j T n o t i m , LOW VOLTAGE INFRARED REMOTE CONTROL TRANSMITTER (RC-5 GENERAL DESCRIPTION

BF119

Abstract: OP162 OP162DRU OP162GS OP162HRU OP262 OP462 BF119 equivalent
Contextual Info: a FEATURES Wide Bandwidth: 15 MHz Low Offset Voltage: 325 ␮V max Low Noise: 9.5 nV/÷Hz @ 1 kHz Single-Supply Operation: +2.7 V to +12 V Rail-to-Rail Output Swing Low TCVOS: 1 ␮V/؇C typ High Slew Rate: 13 V/␮s No Phase Inversion Unity Gain Stable APPLICATIONS

OP262GP

Abstract: OP162 OP162GP OP162GS OP262 OP462 BF117 BF119 headphone audio amplifier op462
Contextual Info: a FEATURES Wide Bandwidth: 15 MHz Low Offset Voltage: 325 ␮V max Low Noise: 9.5 nV/√Hz @ 1 kHz Single-Supply Operation: +2.7 V to +12 V Rail-to-Rail Output Swing Low TCVOS: 1 ␮V/؇C typ High Slew Rate: 13 V/␮s No Phase Inversion Unity Gain Stable 15 MHz Rail-to-Rail

op162g

Abstract: 115Mhz BF119
Contextual Info: BACK a FEATURES Wide Bandwidth: 15 MHz Low Offset Voltage: 325 ␮V max Low Noise: 9.5 nV/√Hz @ 1 kHz Single-Supply Operation: +2.7 V to +12 V Rail-to-Rail Output Swing Low TCVOS: 1 ␮V/؇C typ High Slew Rate: 13 V/␮s No Phase Inversion Unity Gain Stable

OP162

Abstract: OP162GP OP162GS OP162HRU OP262 OP462 BF119
Contextual Info: a FEATURES Wide Bandwidth: 15 MHz Low Offset Voltage: 325 ␮V max Low Noise: 9.5 nV/√Hz @ 1 kHz Single-Supply Operation: +2.7 V to +12 V Rail-to-Rail Output Swing Low TCVOS: 1 ␮V/؇C typ High Slew Rate: 13 V/␮s No Phase Inversion Unity Gain Stable 15 MHz Rail-to-Rail

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

LA 78141

Abstract: TTL LA 78141 LA 78141 data ci LA 78141 NT 407 F TRANSISTOR 8815 k data sheet la 78141 la 78141 equivalent 78141 Hall Electronics LA 78141
Contextual Info: TICPAL22V10Z-25C, TICPAL22V10Z-30I EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992 • • • • • • Virtually Zero Standby Power CLK/I I I I I I I I I I I GND Propagation Delay Time: I, I/O to I/O in the Turbo Mode

LA 78141

Abstract: la 78141 pinout data sheet la 78141 Hall Electronics LA 78141 NT 407 F TRANSISTOR TTL LA 78141 ci LA 78141 la 78141 equivalent 8815 k BR 8050
Contextual Info: TICPAL22V10Z-25C, TICPAL22V10Z-30I EPIC CMOS PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS007C – D3323, SEPTEMBER 1989 – REVISED FEBRUARY 1992 • • • • • • Virtually Zero Standby Power CLK/I I I I I I I I I I I GND Propagation Delay Time: I, I/O to I/O in the Turbo Mode