ZO 607 MA Search Results

equivalent ZO 607

Abstract: ZO 607 MA zo 607 transistor zo 607 STM-64 TTIA0110G TTIA0110G51 transimpedance amplifier 7.5 GHz lightwave receiver stm-64
Contextual Info: Advance Data Sheet March 2001 TTIA0110G 10 Gbits/s Transimpedance Amplifier Features • 10 GHz bandwidth ■ 1 kΩ transimpedance single-ended ■ Complementary 50 Ω outputs can be ac or dc coupled ■ Power dissipation 0.8 W ■ Die size: 1.600 mm x 1.225 mm

Contextual Info: 10 74649 00.66 DRILL 0 0 .5 6 ±0.05 PTEf 0 1 .0 0 PAD - 0 1 0 0 .1 0 21.60 SIGNAL SIGNAL SHIELD SIGNAL SIGNAL SHIELD SIGNAL SIGNAL 15.75 2.25 ROW ROW ROW ROW ROW ROW ROW ROW ROW A ROW H B AC KPLAN E HOLE P A T T E R N RECOMMENDED DIMENSION NOTES: 1. MATERIAL:

smith chart

Abstract: max2640 smith smith MAX2320 MAX2338 MAX2387 MAX2388 MAX2640 MAX2641 MAX2642
Contextual Info: WIRELESS, RF, AND CABLE Application Note 742: Mar 23, 2001 Impedance Matching and the Smith Chart: The Fundamentals Tutorial on RF impedance matching using the Smith Chart. Examples are shown plotting reflection coefficients, impedances and admittances. A sample matching network is designed at 60 MHz using graphical methods.

Contextual Info: 7 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS U N P U B LIS H E D . RELEASED EOR PUBLICATION C O PYR IG H T 19 BY AMP IN C O R P O R A T E D . A L L IN T E R N A T IO N A L 6 5 4 O ,1 9 3 2 LO C AG R IG H T S R E S E R V E D . R E V IS IO N S D IS T

fet d2500

Abstract: lucent D2500 laser driver ZO 607 MA D2500 LG1627BXC LM4040
Contextual Info: Data Sheet May 2001 LG1627BXC Clocked Laser Driver Features Functional Description • High data-rate clocked laser diode driver ■ Clock disable mode for data feedthrough ■ Adjustable high output current ■ Operation up to 3 Gbits/s The LG1627BXC is a gallium arsenide GaAs laser

Contextual Info: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 7294621 POWEREX INC 74 iFJ^ambEl T-°t~zl 0001311 t, Silicon A500 RECTIFIER 3000 Volts 740 Amps Avg. The A500 Series of high power rectifier diodes feature the newly developed, multi-diffused technology in a new General Electric pressure-mounted package. FEATURES:

yx 861

Abstract: yx 801 BUH 508 VAUC GT 1083 NE76084-T1 NE76083A NE76084S L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE ANO ASSOCIATED GAIN vs FREQUENCY Vos = 3 V, Id s • 10 mA FEATURES LOW NOISE FIGURE NF * 1,6 d8 TYP a! f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 0 0 TYP at f • 12 GHz LG • 0.3 ¿im. W g = 280 S LOW COST METAL/CERAMIC PACKAGE

Contextual Info: HEWLETT-PACKARD/ CflPNTS WLTM HEWLETT wSHM PACKARD blE » • 44M7584 DDlQ13b 607 « H P A MSA-1000 Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers MODAMP Features Chip Outline 1 • High Output Power: +27 dBm typical P1 jb at

Contextual Info: PD - 9.1241C International IG R Rectifier IRF7306 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynam ic dv/dt Rating • Fast Switching si o r 3D D1

westinghouse scr

Abstract: Westinghouse SCR data westinghouse t607 westinghouse scr t607
Contextual Info: 125 A Avg. 200 R M S Up to 1 2 0 0 Volts 10-50 /Js Fast Switching SCR T 607_ _1 3 Inches_ Millimeters Symbol A A, B <t>D E F J M N Q <*>T Z <t>VJ M aXi 7.750 7.750 .063 .980 1.212 .250 3.25 .530 1.040 8.100 8.100 .172 1.090 1.250 .630 .755 1.077

E2500

Abstract: EM2500 LG1626DXC LM4040 lucent modulator
Contextual Info: Data Sheet February 1999 LG1626DXC Modulator Driver Features Functional Description • High data-rate optical modulator driver ■ Adjustable output voltage up to 3 Vp-p RL = 50 Ω ■ Adjustable modulator dc offset ■ Operation up to 3 Gbits/s ■ Single ended or differential inputs

Contextual Info: Data Sheet September 2000 LCK4953 Low-Voltage PLL Clock Driver Features • Fully integrated PLL. ■ Output frequency up to 125 MHz in PLL mode. ■ Nine outputs with high-impedance disable. ■ 32-lead TQFP. ■ 50 ps cycle-to-cycle jitter. Description The LCK4953 is a PLL-based clock driver device

Contextual Info: N-CHANNEL POWER MOSFETS IRFP250/251 FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

NEC JAPAN 237 521 02

Abstract: transistor zo 607 2SC5004
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

Z645

Abstract: z323 z644
Contextual Info: ACCESSORIES Contents Page Cable Feed-Throughs . 421 Taper Sleeves. 423 Coloured Plastic C a p s. 424 Fastening Sc re w s. 424 Insulating Washers .

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

NEC NF 932

Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride

DNC5X3125

Abstract: shift register 7495
Contextual Info: Advance Data Sheet March 2000 DNC5X3125 Gigabit Ethernet Transceiver Macrocell Overview Features The DNC5X3125 is a low-cost, low-power transceiver macrocell. It is used for data transmission over fiber or coaxial media in conformance with IEEE* 802.3z Gigabit Ethernet specification and Fibre Channel

Contextual Info: SN74ALVC126 QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS www.ti.com SCES111J – JULY 1997 – REVISED OCTOBER 2004 FEATURES • • • • • D, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Max tpd of 3.1 ns at 3.3 V ±24-mA Output Drive at 3.3 V

TD2400

Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

Contextual Info: ill# Advance Information W196 IC WORKS Spread Spectrum FTG for 440BX and VIA Apollo Pro-133 Features Key Specifications • Maximized EMI suppression using IC W O R KS’ Spread Spectrum Technology • System frequency synthesizer for 440BX, 440ZX and VIA

Contextual Info: SN54AC04, SN74AC04 HEX INVERTERS SCAS519E − JULY 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 6A 6Y 5A 5Y 4A 4Y 2A NC 2Y NC 3A 4 3 2 1 20 19 18 5 17

ansi y14.5m-1982 decimal

Abstract: CD 4039 AE ansi y14.5m-1982 decimal .xxxx SSC 9500 MAA 723 pj 299 IC 4033 pin configuration IC CD 4033 pin configuration IC CD 4033 pin diagram tsop 48 PIN
Contextual Info: PACKAGE s o ie DIAGRAM O U T L IN E S PACKAGE SOIC DIAGRAM O U T L IN E S C o n tin u ed REVISIONS DWG § NOM N MAX T E S 0 18- -1 DWG § JEDEC VARIATION □ AA MIN DWG § S016- JEDEC VARIATION □ AB MIN NOM MAX S020- 2 JEDEC VARIATION T E NOM MAX T E