ZO 405 MF Search Results

zo 405 mf

Abstract: zo 405 m201c
Contextual Info: I|CWE<ll-COII| « ¿ g i t MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS I lower Z •U ltra Low impedance for Personal Computer and Storage Equipment • Endurance with ripple current: 1 0 5 t 2000 to 5000 hours •N o n solvent-proof • PET sleeve is also available upon requests

zo 405 mf

Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

400S

Abstract: MRF18030B MRF18030BR3 MRF18030BSR3
Contextual Info: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

IRL 724 N

Abstract: IRL 724
Contextual Info: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030BR3 RF Power Field Effect Transistors MRF18030BLR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030BSR3 Designed for GSM and EDGE base station applications with frequencies

MRF18030ALSR3

Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030AR3 RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ASR3 Designed for GSM and EDGE base station applications with frequencies

400S

Abstract: MRF18030B MRF18030BR3 MRF18030BSR3
Contextual Info: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

IRL 724 N

Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Motorola transistors M 724

Contextual Info: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

400S

Abstract: MRF18030A MRF18030AR3 MRF18030ASR3
Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF18030A

Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022
Contextual Info: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies

IRL 724 N

Abstract: HC-49/IRL 724 N
Contextual Info: Document Number: MRF18030B Rev. 7, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.

MRF18030ALSR3

Abstract: HC-49/IRL 724 N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18030A Rev. 8, 5/2006 RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz.

IRL 724 N

Abstract: ZO 405 marking j9 marking Z4 400S MRF18030B MRF18030BLR3 MRF18030BLSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier

MRF18030A

Contextual Info: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier

IRL 724

Abstract: IRL 724 N MRF18030A
Contextual Info: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier

IRL 724 N

Abstract: MRF18030A 400S MRF18030ALR3 MRF18030ALSR3 1003 c2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18030A Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier

Contextual Info: Freescale Semiconductor Technical Data MRF18030B Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier

400S

Abstract: MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF18030BLR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030BLSR3

HC-49/IRL 724 N

Contextual Info: Freescale Semiconductor Technical Data MRF18030B Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier

IRL 724 N

Abstract: IRL 724 J906 400S MRF18030B MRF18030BLR3 MRF18030BLSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.

11T1

Contextual Info: CATALDG ITEM ND, YAES18K-I YAES18K-49 YAES18K-3 YAES14K-6 YAES14K-53 YAES14K-8 YAES14K-54 YAES10K-11 YAES10K-56 YAES10K-I2 YAES10K57 YAES10K-13 1 3 4 5 6 7 8 9 10 11 12 WIRE STUD CELER SIZE STR AWG SIZE STRIPES 22-18 #6 RED RED #8 22-18 RED #10 22-18 16-14

MRF18030A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18030A-2 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier