ZO 150 77 Search Results

ICS853031

Abstract: ICS8531-01 853031AY
Contextual Info: ICS853031 Integrated Circuit Systems, Inc. LOW SKEW, 1-TO-9 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853031 is a low skew, high performance 1-to-9 Differential-to-2.5V/3.3V LVPECL/ECL HiPerClockS Fanout Buffer and a member of the HiPerClockS™

APEX PA41

Abstract: TU 55x PA41 PA42
Contextual Info: 93 • APEX ft k tö T a =25°C # fi * ¡E ^ M % Vcc(V) | »1 5e ft £ ft 14 £ * | * [ T c = 2 5 °C ) ¥- | ft m ^ # & IE K U 77 3W 7 £ ft- . ft m m |ft -k # m # HL P A 4 I, P A 4 2 (¡ümff, adli!) V cc 350 V /= 1 5 H z , Ao iiz. = 5kß 94 104 70 TsPer

30S124

Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

Contextual Info: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

63 1826 0306

Abstract: zo 103 ma 2SC5702 DSA003640
Contextual Info: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 Z 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

zo 103 ma

Abstract: transistor 0882 2SC4993 DSA003635
Contextual Info: 2SC4993 Silicon NPN Epitaxial ADE-208-011 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3

TP0033

Abstract: TP0033-HR VU MET
Contextual Info: - 23 8 - • TP « it ft itC A 77 $ fë Ta = 2 5 * C 1ft TP0033, TP0033-HR Vcc s 'M 40 m V c c (V ) I ' W • ^ tí— K , V ' < -y ± 5 ~ +20 V HYB il Vi ± Vcc Pd 1.5 Ic c V fr fc w SR mA Vio Topt - 5 5 * -+ 1 2 5 °C CMR Tstg — 65 — h 150 'C 1,0

zo 103 ma

Abstract: 2SC5247 transistor ECG 332 DSA003641
Contextual Info: 2SC5247 Silicon NPN Bipolar Transistor ADE-208-281 Z 1st. Edition Oct. 1994 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz

zo 607

Abstract: ZO 607 MA transistor zo 607 ZO 109 TRANSISTOR ECG 377 zo 107 equivalent ZO 607 ZO 103 zo 103 ma 2SC4995
Contextual Info: 2SC4995 Silicon NPN Epitaxial ADE-208-013A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline

Contextual Info: HITACHI/ LINEAR DEVICES 2bE D • 4M^b202 0011011 a ■ HA11732-Processor for Video Cameras -r- 77-\i - Features H A l 1732 provides Y correction for the video signal amplified by the preamp, blanking, white clip and black clip.

zo 103 ma

Abstract: 2SC4784 DSA003637
Contextual Info: 2SC4784 Silicon NPN Epitaxial ADE-208-1121A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline

transistor A1277

Contextual Info: 2SC4995 Silicon NPN Epitaxial REJ03G0194-0300Z Previous ADE-208-013A (Z ) Rev.3.00 Apr.05.2004 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ. • High gain, low noise figure PG = 16.5 dB Typ. , NF = 1.1 dB Typ. at f = 900 MHz

zo 103 ma

Abstract: 2SC4899 DSA003637
Contextual Info: 2SC4899 Silicon NPN Epitaxial ADE-208-1126A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline

Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SK10/100EL16TA-TD Differential Receiver PRELIMINARY HIGH-PERFORMANCE PRODUCTS Description Features The SK10/100EL16TA-TD are differential receivers with optional input/output terminations. The EL16TA-TD family is pin-to-pin compatible with SK10/100EL16W and

2SC5139

Abstract: DSA003728
Contextual Info: 2SC5139 Silicon NPN Epitaxial ADE-208-226 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter

2SC5247

Abstract: Smpak
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SC5246

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

CFY77-10

Abstract: HEMT HEMT marking K 036 906 051 VS005553
Contextual Info: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type

UPC454

Abstract: PC454 OP207
Contextual Info: 37 - o p -2 0 7 • v v -f 2 l l m m m , "/ b n fa r/p • & ANALOG DEVICES 0P-207E « S l B S t t y ? ' D • V o s , TC V o s , CMRR, I b S i ' f f l 7 , f > Vs-±15V « i H Ta-25&#39;C A * if v K « calo:0P-207 NEC: ju PC454 E E A, [7 d d H [I (8 77] OU1

zo 607 MA

Abstract: transistor zo 607 2SC4995 yd 1208 TRANSISTOR ECG 377
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.

Contextual Info: Low Skew, 1-to-10, Differential-to-2.5V, 3.3V ICS853S111BI LVPECL/ECL Fanout Buffer DATA SHEET General Description Features The ICS853S111BI is a low skew, high performance 1-to-10 Differential-to-2.5V/ 3.3V LVPECL/ECL Fanout Buffer. The ICS853S111BI is characterized to operate from either a 2.5V or a

TRANSISTOR C 4460

Abstract: AT-41533 544 code marking amplifier zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533-BLK AT-41533-TR1 S21E
Contextual Info: General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511 AT-41533 Features Description • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA • Characterized for 3, 5, and