ZO 150 69 Search Results

zo 150 66

Abstract: V301R 65ZO V361
Contextual Info: LOW PROFILE SERIES SPECIFICATIONS 300» 3 2 0 ,3 8 0 AND 3 3 0 VAC Varistors Maximum Ratings R e co g n itio n s To S a fe ty A gency S ta n d a rd s M aida Style Num ber R 69* ‘ Z O V 3 0 1 R A 1 7 5 R 65* *ZO V301 RA 350 R 66* 1Z O V 30 1R A 360 S66Ü ZO V301R A 460

Contextual Info: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-699A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;

Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;

Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier HITACHI ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; • Withstanding to ESD;

Hitachi DSA0076

Abstract: 1SV70 BB303M
Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0076

Abstract: 1SV70 BB403M
Contextual Info: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0096

Abstract: 1SV70 BB303M
Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0096

Abstract: 1SV70 BB303C SC-82AB SOT343 C5
Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0076

Abstract: 1SV70 BB303C SOT343 C5 K-806
Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Contextual Info: ASL912 ASL912 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview 1.1 Features • 50 ~ 1200 MHz Bandwidth  13.1 dB Gain at 500 MHz  Positive Gain Slope  CSO : 69 dBc, CTB : 66 dBc @ Pout = 110 dBV flat for NTSC 79 channels + QAM256 75 channels, -6 dB offset

Contextual Info: DATA SHEET SKY65372-11: 699 to 748 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure  Low noise, high linearity systems  Macro base stations  Small cells RF_OUT

32-PIN

Abstract: ICS853111 ICS853111B 3094
Contextual Info: Integrated Circuit Systems, Inc. ICS853111B LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111B is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS ECL Fanout Buffer and a member of the

ICS853111

Abstract: ICS853111-02
Contextual Info: Integrated Circuit Systems, Inc. ICS853111-02 LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111-02 is a low skew, high performance 1 - t o - 10 Differential-to-2.5V/3.3V HiPerClockS LVPECL/ECL Fanout Buffer and a member

30S124

Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

32-PIN

Abstract: ICS853111 ICS853111B ICS853111BY
Contextual Info: ICS853111B LOW SKEW, 1-TO-10, DIFFERENTIAL-TO2.5V, 3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111B is a low skew, high perforICS mance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS E C L Fa n o u t B u f fe r a n d a m e m b e r o f t h e

Contextual Info: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

63 1826 0306

Abstract: zo 103 ma 2SC5702 DSA003640
Contextual Info: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 Z 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

zo 103 ma

Abstract: transistor 0882 2SC4993 DSA003635
Contextual Info: 2SC4993 Silicon NPN Epitaxial ADE-208-011 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3

ICS853S006

Contextual Info: Low Skew, 1-to-6, Differential-to2.5V, 3.3V LVPECL/ECL Fanout Buffer ICS853S006I DATA SHEET General Description Features The ICS853S006I is a low skew, high performance 1-to-6 Differential-to-2.5V/3.3V LVPECL/ECL Fanout Buffer. The ICS853S006I is characterized to operate from either a 2.5V or a

HITEC 527

Abstract: ZO 103 zo 607 MA transistor zo 607 zo 103 ma 2SC4994 DSA003635
Contextual Info: 2SC4994 Silicon NPN Epitaxial ADE-208-012 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK–4 2

Hitachi DSA002750

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base

Hitachi DSA002746

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base

zo 103 ma

Abstract: 2SC5247 transistor ECG 332 DSA003641
Contextual Info: 2SC5247 Silicon NPN Bipolar Transistor ADE-208-281 Z 1st. Edition Oct. 1994 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz

transistor zo 607

Abstract: ZO 607 MA zo 607 zo 107 equivalent ZO 607 ZO 109 YD 1270 zo 103 ma zo 103 ma 75 607 ADE-208-013
Contextual Info: 2SC4995 Silicon NPN Epitaxial ADE-208-013 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK–4 2 3