ZO 109 TRANSISTOR Search Results

TRANSISTOR zo 109 ma

Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
Contextual Info: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C

AT41500

Abstract: AT-41500 transistor zo 109 TRANSISTOR zo 109 ma CHIP TRANSISTOR TRANSISTOR 12 GHZ 3 w RF POWER TRANSISTOR NPN 50/TRANSISTOR zo 109 ma transistor Gigahertz AT-41586
Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be

AT-41500

Abstract: TRANSISTOR zo 109 ma transistor zo 109 ZO 109 transistor at41500
Contextual Info: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be

transistor NEC D 587

Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage

transistor fb 31n

Abstract: MRF5815 case 317-01 mrf581 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812 MRF5812R1
Contextual Info: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF581 High-Frequency Transistors MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion

BFQ 58

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!

1j0 919 506 k

Abstract: 1251H AT82 I.C LA 3778
Contextual Info: l ï l HEWLETT I S S fl P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011, AT-32033 Features Description • High Performance Bipolar Translator Optimized for Low Current, Low Voltage Operation • Am plifier T ested 900 MHz

AT41586

Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E
Contextual Info: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option

AT-41586

Abstract: S21E TRANSISTOR zo 109 ma 41586
Contextual Info: AT-41586 Low Cost General Purpose Transistors Data Sheet Description Features Avago’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron emitter-to-emitter

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

AT-41586

Abstract: AT-41586-BLK AT-41586-TR1 S21E 41586
Contextual Info: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option

Contextual Info: r e « HEW LETT mLUM P A C K A R D Low Current, High Perform ance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 F eatures Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

AT-41586

Abstract: AT-41586-BLK AT-41586-TR1 S21E
Contextual Info: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option

AT-41586

Abstract: AT-41586-BLK AT-41586-TR1 S21E TRANSISTOR zo 109 ma
Contextual Info: AT-41586 Low Cost General Purpose Transistors Data Sheet Description Features Avago’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The

AT-32011

Abstract: AT-31011 AT32011 AT-32033 AT-32033-TR1G sot-23 marking code 352
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal

AT-32033-TR1g

Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Contextual Info: Agilent AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them

AT-31011

Abstract: AT32011 AT-32011 AT-32033 AT-32033-TR1G sot-23 npn marking code 162
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal

MMBR521LT1

Abstract: MRF5211LT1
Contextual Info: MOTOROLA Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast

AT-32011-BLK

Abstract: AT-32011 AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 900 mhz oscillator ckt
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA

AT-320

Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 sot-23 marking code 352
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA

AT-32011

Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them

marking code SOT23 SSi

Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK AT-32033-TR1 code marking ssi sot-23
Contextual Info: i Thaïï HEW LETT mLfiM PA C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features • High Perform ance Bipolar T ransistor Optimized for Low Current, Low Voltage O peration • 900 MHz Performance:

Contextual Info: Agilent AT-41586 Low Cost General Purpose Transistors Data Sheet Features The AT-41586 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT process. The die is nitride passivated for surface protection. 86 Plastic Package

ATF-36077

Abstract: ATF-36077-STR transistor atf 36077 hemt lnb ATF pHEMT TRANSISTOR zo 109 ma
Contextual Info: ATF-36077 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Data Sheet Description Features AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo­ morphic High Electron Mobility Transistor PHEMT , packaged in a low parasitic, surface-mountable ceramic package.