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Contextual Info: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,

Contextual Info: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HY5116400 Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY5116400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

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Abstract: GGT DIODE 2MBI300LB-060 40kg-cm S2420
Contextual Info: 2MBI300LB-060 3 ooa I G B ’ Outline Drawings T ^ Z L - ^ 25 IGBT MODULE 25 , ~ ~ 23r s : Features • H igh Speed S w itc h in g • L o w S a tu ra tio n V o lta g e • E SA t l t f — h i£ i) t( M O S - y — H 8 ia ) )W<'y*r — • H ig h In p u t Im p e d a n ce