ZL 575 Search Results

sfns201

Contextual Info: 70 SOLITRON DEVICES INC DFIa3t.fit.02 OOOEOHS t. f • ' 3 5 ’^lS' SWITCH MOS SFNS201C POWER MOS PACKAGE TO-52 MAXIMUM RATINGS VDS *D IDM VGS PD ZL ^J oper T „ stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 200 Drain Current, Continuous @ T =25°C

sfnf221

Contextual Info: _03686O2 SOLITRON DEVICES INC SFNF221 70C 0 2 0 ^° SWITCH MOS ?□ PACKAGE TO -39 DE I T-39-09 fi3bfibüa D00ED4D S |~~ POWER MOS MAXIMUM RATINGS VDS *D ZDM VGS PD ZL TJ oper T stg UNITS PARAMETER SYMBOL 150 Drain Current, Continuous @ Tc»25°C 3.5 A

203C

Abstract: T-39 10-32 UNF 2A
Contextual Info: 8368602 SOLITRON DEVICES 70 DE|fl3t8toa D 0 M D 3 7 a 1 “ INC 70C 02037 D T-39-11 SWITCH MOS SFN203C POWER MOS PACKAGE TO-3 MAXIMUM RATINGS VDS *D XDM VGS PD ZL ^Jioper T stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 200 V Drain Current, Continuous § T =25°C

M57741

Contextual Info: • MITSUBISHI RF POWER MODULE bEMRflSR 0D17200 575 ■ M57741M 156-168MHZ, 12.5V, 28W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM h k £ > —11—£ > h h <> P IN : 3 Pm ©VCCI VCC 2 ®Po ©G N D : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY

CR-4305

Contextual Info: Mounted on White Roof Mounted Profile Spartan MA600.W.A.ABC.001 Specification Part No. MA600.W.A.ABC.001 Product Name Spartan MA600.W Spartan Screw Mount 3in1 Combination Antenna - White Version - GPS/GLONASS: 1575~1602MHz - Cellular: GSM/CDMA/HSPA/UMTS 2.4GHz / 5GHz

Contextual Info: MA600.A.ABC.007 on ground-plane Spartan MA600.A.ABC.007 Specification Part No. MA600.A.ABC.007 Product Name Spartan MA600 Spartan Screw Mount 3in1 Combination Antenna - GPS/GLONASS: 1575~1602MHz - Cellular: GSM/CDMA/HSPA/UMTS 2.4GHz / 5GHz Feature High performance outdoor antenna

BGY204

Abstract: SC09
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY204 UHF amplifier module Product specification File under Discrete Semiconductors, SC09 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY204 FEATURES PINNING - SOT321B • 4.8 V nominal supply voltage

BGY205

Abstract: SC09
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY205 UHF amplifier module Product specification Supersedes data of May 1994 File under Discrete Semiconductors, SC09 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY205 FEATURES PINNING - SOT321B

BGY205

Abstract: pn1996 2 MHz ultrasonic transmitter
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY205 UHF amplifier module Product specification Supersedes data of May 1994 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY205 FEATURES PINNING - SOT321B • 6 V nominal supply voltage

BGY204

Abstract: SC09 MGD375
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY204 UHF amplifier module Product specification File under Discrete Semiconductors, SC09 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY204 FEATURES PINNING - SOT321B • 4.8 V nominal supply voltage

Contextual Info: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.1, 2012-11-07 RF & Protection Devices Edition 2012-11-07 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

se617

Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
Contextual Info: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents

toshiba s-au80

Abstract: S-AU80 Rf power amplifire zg 36 zg 32 zg transistor
Contextual Info: S-AU80 TOSHIBA RF Power Amplifire Module S-AU80 900 MHz Band Amplifier Applications GSM • Output Power: Po = 35.0 dBmW (typ.) • Power Gain: Gp = 35.0 dB (typ.) • Total Efficiency: ηT = 43% (typ.) Unit: mm JEDEC  EIAJ  TOSHIBA Maximum Ratings (Ta = 25°C)

4330-030

Abstract: UHF amplifier module BGY201 SC09
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY201 UHF amplifier module Product specification Supersedes data of June 1994 File under Discrete Semiconductors, SC09 1996 May 22 Philips Semiconductors Product specification UHF amplifier module BGY201 FEATURES PINNING - SOT278A

BGY203

Abstract: SC09
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY203 UHF amplifier module Product specification Supersedes data of May 1994 File under Discrete Semiconductors, SC09 1996 May 23 Philips Semiconductors Product specification UHF amplifier module BGY203 FEATURES PINNING - SOT342A

NJG1148MD7

Contextual Info: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select

NJG1148MD7

Contextual Info: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select

OC106

Contextual Info: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select

Contextual Info: MICRON 1 MEG DRAM MODULE 1 MEG X X MT9D19 9 DRAM MODULE 9 DRAM FAST PAGE MODE MT9D19 LOW POWER, EXTENDED REFRESH (MT9D19 L) FEATURES • Industry standard pinout in a 30-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply

BGY206

Abstract: pn1998
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D369 BGY206 UHF amplifier module Product specification Supersedes data of 1998 Apr 15 1998 May 08 Philips Semiconductors Product specification UHF amplifier module BGY206 FEATURES PINNING - SOT388B • 4.8 V nominal supply voltage

BFP650

Abstract: BFP650 noise figure AN077 infineon AN077 sdars C166 NF50 BFP650 2.4GHz lna
Contextual Info: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

BGY205

Abstract: 4330 030 36 ferroxcube
Contextual Info: Product specification P hilips Sem iconductors UHF amplifier module BGY205 PINNING -SOT321B FEATURES • 6 V nominal supply voltage DESCRIPTION PIN • 3.5 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output