ZFG 28 Search Results

IN965

Abstract: IN965B 1N960B IN970B LT 24G 1N959B 1N960A 1N961 1N961B 1N962
Contextual Info: - & 1N959B 1N959B 1IÍ960 1N960A 1N960B 1N960B 1N961 1N961A 1N961B 1N961B 1N962 1N962A 1N962B 1N962B 1N963 1N963A 1N963B 1N963B 1N964 1N964A 1N964B 1N964B 1N965 1N965A 1N965B 1N96SB 1N966 1N966A 1N966B 1N966B 1N967 1N967A 1N967B 1N967B 1N968 1N968A 1N968B

SJ 76 A DIODE

Contextual Info: SKM 100GB125DN G% R LS TC+ / * 00 ,6&)7420) 08)%2<2)5 Absolute Maximum Ratings Symbol Conditions IGBT UCQ1 GV R LS TC ?C GV R ISJ TC ?CPY Ultra Fast IGBT Module SKM 100GB125DN 680% ILJJ U IJJ D G%'0) R XS TC XJ D ISJ D [ LJ U GV R ILS TC IJ _0 G%'0) R LS TC

T508n outline

Abstract: TS09N T508 T508N T509N telefunken ra 200
Contextual Info: TELEFUNKEN ELECTRONIC Ö1C ì> • fl^SOG'lb ÜGDblôS B ■ AL6G T508N T509N Typenreihe/Type range T508N T509N 400* 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drmiU rrm Periodische Vorwärts-und Rüekwärts-Spitzensperrspannung

ZD 5V6

Abstract: ZD 6v8 6V8A z 5v1 Z14A 5z82 5Z180 7v5, b4ga4,5z
Contextual Info: ^ 7 # S G S -T H O M S O N R Æ r a m iO T t M O S SM 5Z 3V3A -> 200A ZENER DIODES NEW SERIE • HIGH SURGE CAPABILITY UP TO : 180W @ 8.3ms ■ LARGE VOLTAGE RANGE : 3.3V -> 200V SURFACE MOUNT TRAN SIL FEATURES ■ A PERFECT PICK AND PLACE BEHAVIOUR ■ AN EXCELLENT ON BOARD STABILITY

Contextual Info: FUJITSU MB86930_ 930 Seríes 32-BIT RISC EMBEDDED PROCESSOR May 25, 1994 Included to maximize the performance of the system with minimum glue logic, are chip select outputs, program­ mable wait-state generation and built-in support for a high performance connection to page-mode DRAM. See

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той