ZEROPOWER RAM MK48Z Search Results

MK48T08

Abstract: mk48t18 MK48Z08 MKI48Z12 MK48Z09 MK48T12
Contextual Info: / = 7 SGS-THOMSON ^7# APPLICATION NOTE [fôôD g^ [lL[l©Tr[S(ô RÎ]0©i ENSURING DATA INTEGRITY IN ZEROPOWER AND TIMEKEEPER RAMs The ZEROPOWER and TIMEKEEPER™ product families offer a unique non-volatile RAM solution. ZEROPOWER products consist of a single chip

MK48Z32

Contextual Info: MK48Z32 32A B -10/12/15 { Z T SGS-THOMSON 32 K X 8 ZEROPOWER RAM ADVANCE DATA FEATURES • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ PR ED IC TED BATTERY BACK-U P OF 10

Zeropower ram MK48Z

Abstract: 2kx8 2716 CMOS-440
Contextual Info: r = J S G S T H O M S O MK48Z02/12 B -12/15/20/25 N 2K 8 ZEROPOWER RAM x • PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70 °C ■ DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC W RITE PROTECTION DURING POWER FAILURE

mk48z30

Abstract: external RAM ic 6264 CI 6264 SRAM 6264 application note 6264 cmos ram STATIC RAM 6264 SRAM 6264 ic 6264 6264 SRAM
Contextual Info: MK48Z30/30A B -10/12/15 f Z J SG S-IU O M SO N ^7# RfflD(g[S(Q)IILi in^®ROO©i 32 K X 8 ZEROPOWER RAM ADVANCE DATA • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. 1 ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

MK48T18B15

Abstract: MK48T18B10 MK48T18B-20 MK48T08B-15 MK48T18B20 MK48T18b-15 MK48T08B15 MK48T08B10 MK48T08B20 MK48T18B
Contextual Info: • r z ^ 7 # 7 ^ 537 0 0 5 7^5 7 R ■ j S C S -T H O M . H in ig E O ilL iM W n E S < ' ¿ ib 'Z Z - ^_ S O N S G S-THOMSON M K 4 8 T 0 8 /1 8 (B _ - 1 0 / 1 5 / 2 0 3QE D T IM E K E E PE R 8 K X 8 ZEROPOWER™ RAM ■ INTEGRATED ULTRA LOW POWER SRAM,

Contextual Info: 7^5*1537 0056055 q MK48Z30/30A B -10/12/15 S G S -T H O M S O N 5 7 . M S 6 S-THOMSON 30 E D 32 K X 8 ZEROPOWER RAM ADVANCE DATA i IN T E G R A T E D U LT R A L O W P O W E R S R A M , P O W E R -F A IL C O N T R O L C IR C U IT A N D BAT­ TER Y. i U N L IM IT E D W R IT E -C Y C L E S .

Zeropower ram MK48Z02

Abstract: MK48Z02-12 R912
Contextual Info: M48Z02 M48Z12 /= T SGS-THOMSON ^ 7 # ^D g[S(ô [l[Li ir^®RgO©S CMOS 2K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z02.12 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ 11 YEARS of DATA RETENTION in the ABSENCE of POWER ■ CHOICE of TWO WRITE PROTECT

T1A12

Abstract: MK48Z09 M48Z09 M48Z19
Contextual Info: M48Z09 M48Z19 /S T SGS-THOMSON ^7# [M ^©ILi©T0M[] g§ CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z09.19 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ 11 YEARS of DATA RETENTION in the ABSENCE of POWER ■ CHOICE of TWO WRITE PROTECT

Contextual Info: M48Z08 M48Z18 / = T SGS-THOMSON 7 # ^ [ *[ E i[ L [ I M ( Q M ( g S CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z08.18 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ SMALL OUTLINE PACKAGE PROVIDES DI­ RECT CONNECTION for a SNAPHAT HOUS­

DIP28

Abstract: dip-28 M48Z02 Zeropower M48T02-70PC1 M48Z08-100PC M48T08-100PC M48Z35-70PC1 MK48Z02B-15 DS1220AB-200 DS1225Y-150
Contextual Info: HHTEPTEKC Ten: 4 9 5 7 3 9 -0 9 -9 5 , 6 4 4 -4 1 -2 9 MMKpocxeMbi naMATM NV-SRAM c nMTaHMeM e le C tfO ot 6 aTapeM m nacaM M p e a n b H o ro BpeM eHM M M KpocxeM H naM^TM RAM c nMTaHMeM o t 6aTapeM t BCTpoern-ibiMM nacaMM p e a n b Horo BpeMeHM m KBapu,eBbiM pe30HaT0p0M .

SGS MK48T18

Abstract: MK48T08 TIMEKEEPER
Contextual Info: ^¿7=#7. SGS-THOMSON RÆô [S Q iL[i©ir^(ô)Mô(gi APPLICATION NOTE UPGRADED MEMORY CAPABILITY USING ZEROPOWER AND TIMEKEEPER PRODUCTS Systems that need read/write non-volatile memory have several choices available: EEPROM, SRAM plus battery or the ZEROPOWER and

Contextual Info: M48Z08 M48Z18 / 3 T SGS-THOMSON * 7 /. IM niBIM ilUICTtBllKSg CMOS 8K x 8 ZEROPOWER SRAM • PIN and FUNCTION COMPATIBLE with the MK48Z08,18 ■ SELF CONTAINED BATTERY in the CAPHAT DIP PACKAGE ■ SMALL OUTLINE PACKAGE PROVIDES DI­ RECT CONNECTION for a SNAPHAT HOUS­

sram 2k x 8

Contextual Info: M48Z02 M48Z12 CMOS 2K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT

MK48Z09

Abstract: M48Z09 M48Z19
Contextual Info: M48Z09 M48Z19 CMOS 8K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECTand WRITE PROTECTION POWER-FAIL INTERRUPT

Contextual Info: 55E /T T *7 # . P • 7 ^ 5 3 7 0036365 S C S -1 H O M S O N * [l» [i g « M (g § 376 s 6 ■S6TH T -H é -¿ 3 - / s - thomson M K I4 8 Z 1 8 CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA ■ INDUSTRIAL TEMPERATURE RANGE -40‘C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L C IR C U IT AND ENERGY

MKI48Z18

Contextual Info: Æ 7 SGS-THOMSON MKI48Z18 ^ 7# l* ® S iLi(M (ô)K i(g S CMOS 8K x 8 ZEROPOWER SRAM ADVANCE DATA • INDUSTRIAL TEMPERATURE RANGE -40’C TO +85"C ■ INTEGRATED LOW POWER SRAM, POWERFAIL C O N TR O L C IR C U IT AND ENERGY SOURCE ■ UNLIMITED WRITE-CYCLES.

m48z08

Contextual Info: M48Z08 M48Z18 CMOS 8K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT

Contextual Info: r z 7 SCS-THOMSON ^ 7# MK48Z32 MK48Z32Y CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS

Contextual Info: rz rz SGS-THOMSON G«[f3 6 [ILiOT@«§ MK48Z02 MK48Z12 CMOS 2K x 8 ZEROPOWER SRAM • PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC WRITE PROTECTION DURING POWER FAILURE

3066

Abstract: Zeropower ram MK48Z12
Contextual Info: MK48Z02 MK48Z12 f Z T SGS-THOMSON ^ 7 # iK g i a iC T ^ © iD © s CMOS 2K x 8 ZEROPOWER SRAM » PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C • DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC WRITE PROTECTION DURING POWER

48z02

Abstract: MK48Z02 VA00603 Zeropower ram MK48Z02 MK48Z12 Zeropower ram MK48Z12 PHDIP24 MK4BZ
Contextual Info: 52E D • 71 212 37 0036341= 337 MSGTH T - ¥ ^ ~ Z 3 ^ / 2 - SGS-THOMSON MK48Z02 KLKSIMKS_ MK48Z12 S 6 S-THOMSON CMOS 2K x 8 ZEROPOWER SRAM ■ PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER - DATA SECURITY PROVIDED BY AUTOMATIC

Contextual Info: SEE T> m 7l12c1237 DD36MD0 113 «SGTH SGS-THOMSON ¡5 MK48Z32 MK48Z32Y 6 S-THOflSON CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE

48z02

Abstract: PHDIP24
Contextual Info: r= Z SCS-THOMSON IM g^ [iL[i©YGM]0(gS MK48Z02 MK48Z12 CMOS 2K x 8 ZEROPOWER SRAM • PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC WRITE PROTECTION DURING POWER FAILURE

Contextual Info: MK48Z30 MK48Z30Y SGS-THOMSON mo CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTtiA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT AND BAT­ TERY. ■ UNLIMITED WRITE-CYCLES. ■ READ-CYCLE TIME EQUALS WRITE-CYCLE TIME. ■ MINIMUM BATTERY BACK-UP OF 10 YEARS @ 25’C.