ZERO-GATE VOLTAGE DRAIN CURRENT Search Results

DUAL GATE MOS-FET

Abstract: jfet pch TRANS JFET N-CH
Contextual Info: NTE Type No. Polarity and Material Description and Application Case Style Diag. No. Voltage Gate to Source Volts Cutoff Voltage Gate to Source (Volts) Drain Current Zero-Gate (mA) Drain Current (mA) Res Drain to Source (Ohms) Cap Input (pf) Min Max(OFF)

Contextual Info: FIELD EFFECT TRANSISTORS FET NTE TVpe No. Polarity and Material Description and Application Case Style Diag. No. Voltage Gate to Source Min (Volts) Cutoff Voltage Gate to Source Max(OFF) (Volts) Drain Current Zero-Gate Min-Max (mA) Drain Current Max(OFF)

4435a

Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V

ECG465

Abstract: ECG491 ECG466 uei 310 ECG490 ecg mosfet ECG464 ECG492 mosfet 830 transconductance mosfet
Contextual Info: Field Effect Transistors cont'd (Observe ECG Type Transcon­ ductance gfs pmhos Description and Application Gate to Source Cutoff Voltage V GS (off) Max V Zero-Gate Drain Current Drain Current •d s s •d 10 nA |Max ECG464 ▲ m Gate to Drain to Source

Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application Case Style Dlag. No. Voltage Gate to Source Min (Volta) Cutoff Voltage Gate to Source Max(OFF) (Volta) BV q s s Drain Current Zero-Gate Min-Max (mA) Drain Current

P603

Abstract: B6030L CEP6030LS2 CEB6030LS2
Contextual Info: CEP6030LS2/CEB6030LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVdss VgSz OV, ID=250|oA 30 Zero Gate Voltage Drain Current Idss Vds=24V, Vgs =0V Gate-Body Leakage Igss Vgs=±16V,Vds=0V

OM55N10NK

Abstract: OM60N10NK OM75N05NK OM75N06NK
Contextual Info: Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V BR DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0)

Contextual Info: CEP6031LS2/CEB6031LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voltage Drain Current Idss V ds =24V, V gs =0V 10 pA Gate-Body Leakage

2SJ487

Abstract: jvv diode
Contextual Info: Power FET Specification Maximum Ratings Symbol T stg T Ch V DSS V GSS I D I DP Condition Pulse width ^ 10 ¡is Duty cycle S 1/100 Source Current DC IS Total Power Dissipation P T Item Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

B703A

Abstract: GS109 P703
Contextual Info: CEP703ALS2/CEB703ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BV dss V gSz OV, ID=250[i A 30 Zero Gate Voltage Drain Current Idss V ds =24V, Vgs =0V 10 [iA Gate-Body Leakage

2SK2678LS

Contextual Info: 2SK2678LS N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications ¥ Low ON-state resistance. ¥ Low Qg. Tc=25¡C Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

2SK2678

Contextual Info: 2SK2678 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Low Qg. Tc=25°C Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

250M

Abstract: IRF240
Contextual Info: electrical characteristics T q - 2 5 ° C (unless otherwise specified) CHARACTERISTIC [ off characteristics Drain-Source Breakdown Voltage IRF230/D86DN2 (VGS = 0V, lD = 250 ,uA) IRF231/D86EM2 Zero Gate Voltage Drain Current (Vps = Max Rating, VGs = 0V, T c = 25°C)

CEP603AL

Abstract: CEB603ALS2 CEP603A
Contextual Info: CEP603ALS2/CEB603ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voilage Drain Current Idss V ds=24V, V gs =0V 10 [iA Gate-Body Leakage

300 Amp mosfet

Abstract: 200 Amp mosfet ECG222 ECG459 ECG451 ECG458 ECG221 ECG457 ECG312 dual jfet vhf
Contextual Info: Field Effect Transistors ECG Type Description and Application Maximum Ratings at T a = 25°C Observe MOS Handling ▲ Gate to Source Trans­ Cutoff conductance Voltage gfs VGS <°«> Typ fjmho8 Max V Zero-Gate Gate To Voltage Source Drain Breakdown Input

MMC4338

Abstract: MMCF4338 MMCF4339
Contextual Info: MMC4338, MMCF4339 continued E LE C T R IC A L CH A R A CTER ISTICS Characteristic Gate-Source Breakdown Voltage ( lG = 10 MAdc, V DS = 0) Gate Reverse Current (V GS = 30 Vdc, V p g = 0) Gate-Source Pinch-Off Voltage <VDS = 20 Vdc, l D = 1.0 nAdc) Zero-Gate Voltage Drain Current

BFM34

Abstract: 100WF
Contextual Info: nu itnut i SEME BFM34 LAB MECHANICAL DATA TetraFET 100W - 28V - 900MHz DIM A B C D E F G H 1 J K M N O P ELECTRICAL CHARACTERISTICS Parameter PER SIDE Drain-Source B Vncc Zero Gate Voltage Drain Current Iq SS Gate Leakage Current Toi. 0.50 0.13 5° 0.13 0.13

ECG222

Abstract: ECG458 300 Amp mosfet ecg459 transistor jfet ecg 200 Amp mosfet dual jfet vhf ECG312 ECG451 ECG221
Contextual Info: Field E ffect Transistors M axim um Ratings at T a = 25°C Observe M O S Handling ▲ Gate to Source Cutoff Voltage V GS (off) M ax V Zero-Gate Gate To Voltage Source Drain Breakdown Current Voltage IpSS mA b v GSS Min - Max Min V 8 5 -2 5 20 15,000 18 typ

OM400L60CMC

Contextual Info: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM400L60CMC (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =600V

Contextual Info: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM150F120CMC (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V

Contextual Info: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM300L60CMC (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =600V

MJ 800

Contextual Info: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM150F120CMA (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V

Contextual Info: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM150L120CMA (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V

Contextual Info: 205 Crawford St. Leominster, MA 01453 978 534-5776 Fax(978)537-4246 ELECTRICAL CHARACTERISTICS: OM200L120CMA (Tc= 25°°C unless otherwise specified) Characteristic OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =1200V