ZENNER DIODE 20 Search Results

1823-01R

Abstract: 2SK1823-01R T151 FA-MT A2260
Contextual Info: 2SK1823-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES I Features Outline Drawings ►High current ►-ow on-resistance ►slo secondary breakdown ►.ow driving power ►High forward Transconductance ►\valanche-proof ►ncluding G-S Zenner diode

FA 23 zenner

Abstract: A2466 DO810 2SK2259-01MR K2259 bojk
Contextual Info: 2SK2259-01MR FUJI PO W ER M O S-F ET N-OHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES Outline Drawings I Features »High current »Low on-resistance »Mo secondary breakdown »Low driving power 1h igh forward Transconductance 'Avalanche-proof 'Including G-S Zenner diode

H150

Contextual Info: 2SK1822-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IHA SERIES • Features Outline Drawings • High current • Low on-resistance • No secondary breakdown • Lovv driving power • High forward Transconductance • Avc lanche-proof • Including G-S Zenner diode

16 zenner diode

Abstract: zenner ZENNER DIODE W 20 CRY62 CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11
Contextual Info: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Use in Communication, Automation and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm l Average power dissipation: P = 0.7 W l Zener voltage: VZ = 6.2~47 V l Suitable for compact assembly due to small surface-mount package

NJM2646M

Abstract: DIODE 10D1 diode Zenner 12V motor dc fan 48v zd 182 kick back 10D1 2SK3022 HW101A NJM2640
Contextual Info: NJM2646 Two-phase Unipolar DC Brushless Motor Pre-Driver IC • GENERAL DESCRIPTION ■ PACKAGE OUTLINE The NJM2646 is a 2-phase DC brushless motor pre-driver IC. It incorporates Lock Detect / Auto Protection Circuit and totem-pole pre-driver for external power MOS-FET.

motor dc fan 48v

Abstract: 24v to 48v dc fan from brushless 10D1 2SD0968A HW101A NJM2640 NJM2640E DIODE 10D1 spike killer 16 zenner diode
Contextual Info: NJM2640 Two-phase Unipolar DC Brushless Motor Pre-Driver IC ♦ PACKAGE OUTLINE ♦ GENERAL DESCRIPTION NJM2640 is a two phase unipolar DC brushes motor pre-driver IC. It features high voltage bipolar technology so that the driver works up to 48V. High voltage operation

Contextual Info: NJM2640 Two-phase Unipolar DC Brushless Motor Pre-Driver IC ♦ PACKAGE OUTLINE ♦ GENERAL DESCRIPTION NJM2640 is a two phase unipolar DC brushes motor pre-driver IC. It features high voltage bipolar technology so that the driver works up to 48V. High voltage operation

CRY62

Abstract: CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ47
Contextual Info: CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 Applications: Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Unit: mm z Average power dissipation: P = 0.7 W z Zener voltage: VZ = 6.2~47 V

zenner

Abstract: 015AZ12-X 015AZ2 015AZ24 015AZ16 702z diode 639 015AZ15
Contextual Info: 015AZ2.0~015AZ24 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ24 Constant-Voltage Regulation Applications Unit: mm Small package Nominal voltage tolerance of about ±2.5% 2.0 V~24 V Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit

2SD2131

Contextual Info: TO SHIBA 2SD2131 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 2 1 31 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS r 10 ±0.3 ^3.2 ±0.2 2.7±Q 2 <v> o • High DC Current Gain : hFE = 2000 (Min.) (VCE = 3V, I c = 3A)

1N5913B

Abstract: 1N5956B HSMBJ5913B HSMBJ5914B HSMBJ5915B HSMBJ5916B HSMBJ5917B HSMBJ5918B HSMBJ5919B HSMBJ5956B
Contextual Info: HSMBJ5913B thru HSMBJ5956B 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 602 941-6300 Fax (602) 947-1503 FEATURES: • • • • Surface mount equivalent to 1N5913B thru 1N5956B Popular HSMBJ Package outline-Small and Rugged Zener voltage 3.3V to 200V

TD62083AP

Abstract: TD62083AP TOSHIBA
Contextual Info: Technical Data Silicon Monolithic Bipolar Digital Integrated Circuit TD62081AP/AF TD62082AP/AF TD62083AP/AF TD62084AP/AF 8-channel Darlington Sink Driver The TD62081AP/AF Series features high-voltage, high current Darlington drivers composed of eight NPN Darlington pairs.

2SK2259-01M

Abstract: 00031b B080
Contextual Info: 2SK2259-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • High current • Low on-resistance • No secondary breakdown • Low driving power • High forw ard Transconductance

CDLL4775

Abstract: CDLL4775A CDLL4776 CDLL4776A CDLL4777 CDLL4777A CDLL4778 CDLL4778A CDLL4779 CDLL4784A
Contextual Info: • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES CDLL4775 thru • LEADLESS PACKAGE FOR SURFACE MOUNT • 8.5 VOLT NOMINAL ZENER VOLTAGE + 5% CDLL4784A • LOW CURRENT RANGE: 0.5 TO 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS

Contextual Info: Technical Data Silicon Monolithic Bipolar Digital Integrated Circuit TD62081AP/AF TD62082AP/AF TD62083AP/AF TD62084AP/AF 8-channel Darlington Sink Driver The TD62081 AP/AF Series features high-voltage, high current Darlington drivers composed of eight NPN

WRA04X-U

Abstract: AC230V
Contextual Info: 25 WATT AC-DC CONVERTER WRA-00X Series 3 CHANNEL Model Specifications<AC/DC> WRA*X-U 25WATTS/3 OUTPUTS WRA01X-U WRA03X-U 0.77-0.36A 0.75-0.32A WRA04X-U Input Characteristic AC100-240V Input Voltage Input Current AC85-264V DC110-350V Input Range Input Frequency

Contextual Info: P ^p i GEC P L E S S E Y DS3486-1.2 DC1250/70/80 Series HIGH POWER MICROWAVE GUNN DIODES The D C 1250 S eries are gallium arsenide bulk effect d e vice s fo r the g e nera tion of C W m icrow ave po w e r in the range 4 G H z to 1 8 G H z d e pend ing on the cavity and diodes

015AZ12-X

Abstract: 015AZ2 015AZ24 MG zenner
Contextual Info: 015AZ2.0~015AZ24 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ24 Constant-Voltage Regulation Applications Unit: mm z Small package z Nominal voltage tolerance of about ±2.5% 2.0 V~24 V Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol

Contextual Info: 02DZ100 TOSHIBA Diode Silicon Epitaxial Planar Type 02DZ100 Constant-Voltage Regulation Applications Reference Voltage Applications Unit: mm z Small package Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Power dissipation P* 200 mW

02DZ2

Abstract: 02DZ24 02DZ24-X
Contextual Info: 02DZ2.0~02DZ24 TOSHIBA Diode Silicon Epitaxial Planar Type 02DZ2.0~02DZ24 Constant Voltage Regulation Applications Reference Voltage Applications Unit: mm z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced.

CHN 950

Abstract: chn 630
Contextual Info: 2SK1823-01R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-IHA SERIES • Features Outline Drawings • High current • -ow on-resistance • Mo secondary breakdown • .ow driving power • High forward Transconductance

TD62001

Abstract: IC TD62002P AP series TD62003F TD62001AF TD62001AP 35VTA TD62004 TD62003P TD62001F
Contextual Info: TD62001~004P/AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62001P,TD62001AP,TD62001F,TD62001AF,TD62002P TD62003AF,TD62004P,TD62004AP,TD62004F,TD62004AF 7CH DARLINGTON SINK DRIVER

A2305

Abstract: A2306 2SK1969-01 ZENNER A2 SC-65 2SK1969
Contextual Info: 2SK1969-01 FUJI POW ER M OS-FET N-CHANNEL SILICON POWER MOS-FET F A P -IIIA S E R I E S O utline D raw ings I F e a tu r e s *Hig i current ' Low on-resistance 'N o secondary breakdown ' L o v driving power »Hig i forward Transconductance 'Avalanche-proof

Contextual Info: TD62001P/AP/F/AF TD62002P/AP/F/AF - TD62003P/AP/F/AF TD62004P/AP/F/AF SILICON MONOLITHIC BIPOLAR DIGITAL INTEGRATED CIRCUIT 7CH DARLINGTON SINK DRIVER The TD62001P / AP / F / AF Series are high-voltage, high