ZENER TEST ICT Search Results

IN4753

Abstract: 129 ITT zener ln4731 1N4733 1N4705
Contextual Info: AMERICAN POWER DEVICES S3E D • ’0737135 GOQGOIM T m ÎS j/il ^ ZENER DIODES r ~ - DO-35 Case - -— -— — — 250mW - DO-35 Case Nominal Zener Voltage Maximum Reverse Current Test

Contextual Info: LOW VOLTAGE AVALANCHE ZENER DIODES LVA 400m W Pa rt# Nom inal Zene r Voltage Test Current Maximum Zener Impedence M axim um Reverse Current v z @ iCT lz (mA) Zzr@lzr(a> Tc ( V C ) 4.3 1N6082B 1N6083B 1N6084B 4.7 5.1 5.6 1N6085B 1N6086B 1N6087B 1N6088B 6.2

UJT 2N2646 specification

Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

Contextual Info: Part: ICTE-10 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

ICTE-22

Contextual Info: Part: ICTE-22 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

10c zener

Contextual Info: Part: ICTE-10C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00

Contextual Info: Part: ICTE-8 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 25.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

zener diode 12c

Contextual Info: Part: ICTE-12C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00

Contextual Info: Part: ICTE-8C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 50.00 Maximum Temperature Max Temp (°C ) 0.00

18c zener diode

Abstract: ZENER 18C 2480 zener
Contextual Info: Part: ICTE-18C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00

Contextual Info: Part: ICTE-5 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 300.00 Maximum Temperature Max Temp (°C ) 0.00

Contextual Info: Part: ICTE-18 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

Contextual Info: Part: ICTE-15C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00

microcontroller based overvoltage and under voltage relays

Contextual Info: Agilent Medalist i3070 Series 5 In-Circuit Test System Data Sheet The Agilent Medalist i3070 Series 5 In-Circuit Test ICT system introduces a new infrastructure with 3 new Capabilities: 1) The flexibility to incorporate external circuits to balance between ICT &

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Contextual Info: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets

GE Transient Voltage Suppression Manual

Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

1n53338

Abstract: 1N53888 2SC 930 AF 1NS339B 1N6360B Zener diode wz 210 1N5333B 1N5334B 1N5335B 1N5336B
Contextual Info: 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­ teristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an axlal-lead, transfer-molded plastic package offering protection In all common environ­

in5333

Abstract: IN5388 DZU 41 IN5333 motorola in538 1C5366 1C3016
Contextual Info: MOTOROLA f SC -CDIODES/OPTO} 6367255 MOTOROLA S C 34 D E^j b3Lj7E5S 34 c <D I O D E S / O P T O 0030151 38121 7~f/~0'5 SILICON ZENER D50DE DICE continued) 1C3016 CHIP NO. — SERIES LINE SOURCE— DZD900 CURRENT REGULATOR DIODE Device assembled from this chip type are similar to or better

B34 ZENER DIODE

Abstract: ZY15 ZENER diode Y8 ZY18 58A2 diode zener 345 FA60R FAG 32 H 48 zener diode ZY10
Contextual Info: S7E ]> • 345^355 0GÜ07bG GSS ■ F G R S FAGOW zY2oo FA60R Dimensions in mm. ELECTRONICS DO-15 F-126 58 A 2 Plastic TH l-^ S Voltage 1 to 200 V Power 2.0 W Mounting instructions 1 Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

Gfk 81a

Abstract: LT 543 common cathode Gfp 81a MMBZ15ALT1 MZ4623 SOT23 MOS MARKING KE gfk 47a mzp a 001 96 16 MMBZ20ALT1 1N5994B
Contextual Info: TVS/Zeners Transient Voltage Suppressors Zener Regulator and Reference Diodes In Brief . . . Motorola’s standard TVS Transient Voltage Suppressors and Zener diodes comprise the largest inventoried line in the industry. Continuous development of improved manufacturing

zener diode 1n5908

Abstract: 1N5908 1N6373 1N6389 5KE200A ICTE-45 MPTE-45 zener 1.5KE200A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5908 1500 Watt MOSORB GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are Motorola’s exclusive,

ICTE-5

Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have

zener 1.5KE200A

Abstract: 1.5KE6.8A/CA 1N6373 1N6373A 1N6374 1N6375 1N6376 1N6377 1N6378 1N6382
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N6373A SERIES 1500 Watt MOSORB GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are Motorola’s exclusive,