ZENER TEST ICT Search Results

Contextual Info: LOW VOLTAGE AVALANCHE ZENER DIODES LVA 400m W Pa rt# Nom inal Zene r Voltage Test Current Maximum Zener Impedence M axim um Reverse Current v z @ iCT lz (mA) Zzr@lzr(a> Tc ( V C ) 4.3 1N6082B 1N6083B 1N6084B 4.7 5.1 5.6 1N6085B 1N6086B 1N6087B 1N6088B 6.2

Contextual Info: Part: ICTE-10 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

Contextual Info: Part: ICTE-5 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 300.00 Maximum Temperature Max Temp (°C ) 0.00

Contextual Info: Part: ICTE-18 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity

microcontroller based overvoltage and under voltage relays

Contextual Info: Agilent Medalist i3070 Series 5 In-Circuit Test System Data Sheet The Agilent Medalist i3070 Series 5 In-Circuit Test ICT system introduces a new infrastructure with 3 new Capabilities: 1) The flexibility to incorporate external circuits to balance between ICT &

agilent i3070 AC power

Abstract: AGILENT i3070 maintenance 5989-6292EN agilent i3070 i3070 5990-4411EN microcontroller based overvoltage and under voltage relays PS6751Quad fr100k zener test ict
Contextual Info: Agilent Medalist i3070 Series 5 In-Circuit Test System Data Sheet The Agilent Medalist i3070 Series 5 In-Circuit Test ICT system introduces a new infrastructure with 3 new Capabilities: 1) The flexibility to incorporate external circuits to balance between ICT &

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Contextual Info: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

in5333

Abstract: IN5388 DZU 41 IN5333 motorola in538 1C5366 1C3016
Contextual Info: MOTOROLA f SC -CDIODES/OPTO} 6367255 MOTOROLA S C 34 D E^j b3Lj7E5S 34 c <D I O D E S / O P T O 0030151 38121 7~f/~0'5 SILICON ZENER D50DE DICE continued) 1C3016 CHIP NO. — SERIES LINE SOURCE— DZD900 CURRENT REGULATOR DIODE Device assembled from this chip type are similar to or better

B34 ZENER DIODE

Abstract: ZY15 ZENER diode Y8 ZY18 58A2 diode zener 345 FA60R FAG 32 H 48 zener diode ZY10
Contextual Info: S7E ]> • 345^355 0GÜ07bG GSS ■ F G R S FAGOW zY2oo FA60R Dimensions in mm. ELECTRONICS DO-15 F-126 58 A 2 Plastic TH l-^ S Voltage 1 to 200 V Power 2.0 W Mounting instructions 1 Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

Gfk 81a

Abstract: LT 543 common cathode Gfp 81a MMBZ15ALT1 MZ4623 SOT23 MOS MARKING KE gfk 47a mzp a 001 96 16 MMBZ20ALT1 1N5994B
Contextual Info: TVS/Zeners Transient Voltage Suppressors Zener Regulator and Reference Diodes In Brief . . . Motorola’s standard TVS Transient Voltage Suppressors and Zener diodes comprise the largest inventoried line in the industry. Continuous development of improved manufacturing

zener diode 1n5908

Abstract: 1N5908 1N6373 1N6389 5KE200A ICTE-45 MPTE-45 zener 1.5KE200A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5908 1500 Watt MOSORB GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are Motorola’s exclusive,

ICTE-5

Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have

zener c23

Abstract: zener c25 diode zener c23 diode zener c25 zener DIODE C25 zener diode c2-5 B34 ZENER DIODE 7A1 zener diode c25 zener diode ZENER C2 11
Contextual Info: S7E ]> • 345^355 0GÜ07bG GSS ■ F G R S ^ 2°° FAGOR FA60R ELECTRONICS DO-15 F-126 58 A 2 Plastic D im ensions in mm. THl-^S Voltage 1 to 200 V Power 2.0 W Mounting instructions 1 Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

h8 diode zener

Abstract: Zener diode MARKING H5 zener diode f7 ZENER DIODE 6.2V SR Zener diode zener diode F6 marking code f6 DIODE CMOZ5V6 marking code f4 DIODE Zener Diode LF marking
Contextual Info: Central CMOZ2V4 THRU CMOZ43V Semiconductor Corp. SURFACE MOUNT ULTRAmini “ SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage reg­ ulator in an epoxy-molded ULTRAmini™ pack­

1N8373

Abstract: 1N837 bidirectional clipper 1N6294A motorola 1n5903
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 1500 Watt MOSORB GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high volt­

Contextual Info: 1N5223B through 1N5258B Silicon Epitaxial Planar Zener Diodes for Voltage Regulation Features * Glass package DO-35 structure ensures high reliability. • Wide spectrum from 2.7V through 36V of zener voltage provide flexible application. Outline IJ r 1 2

BZX84C12LT1

Abstract: BZX84C3V0L BZX84C24LT1
Contextual Info: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp = 0.9 V Max @ Ip = 10 mA for a I types) Zener Voltage Vzi (Volts) @ \zx^ - 5 mA (1) Max Reverse Leakage Current Max Zener Impedance Zener Voltage V a (Volts) @ \zT2 * ^ m A

Contextual Info: MOTOROLA SC DIODES/OPTO h4E D • L3t.72.55 DDflSBMM 833 ■ M0T7 SECTION 4.1.4 DATA SHEETS TRANSIENT VOLTAGE SUPPRESSORS — continued Section 4.1.4.1 Axial Leaded — continued SECTION 4.1.4.1.3 1500 WATT PEAK POWER MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS

1.5KE-200A ST

Abstract: 1.5ke30a motorola 1N6294A motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N6267A SERIES 1500 Watt MOSORB GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive com ponents from high vo lt­

1N6389

Abstract: 1N6373 1N6381 1N6382 1N6383 1N6384 ICTE-10C ICTE-36C MPTE-45C
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

1N6373

Abstract: 1N6381 1N6382 1N6383 1N6384 1N6389 ICTE-10C ICTE-36C MPTE-45C
Contextual Info: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have

1N63xx

Abstract: 1N6373
Contextual Info: 1N6373 − 1N6381 Series ICTE−5 − ICTE−36, MPTE−5 − MPTE−45 1500 Watt Peak Power Mosorbt Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Cathode Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have

1N6373

Abstract: 1N6374 ICTE-36 zener 1N6373 1N6375 1N6378 1N6381 1N6382 1N6389 MPTE-45
Contextual Info: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have