ZENER DIODE BUT Search Results

MARK B3L

Abstract: diode b2l A1L DIODE zener a1 7 HZU11A1L HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L
Contextual Info: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.

Contextual Info: PRODUCT: ZEN056V075A48LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27365 REV LETTER: E REV DATE: JUNE 22, 2011 PAGE NO : 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.

Zener Diode 5A

Contextual Info: PRODUCT: ZEN132V230A16LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27362 REV LETTER: D REV DATE: MAY 11, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.

Contextual Info: PRODUCT: ZEN098V130A24LS PolyZen DOCUMENT: SCD27645 REV LETTER: D REV DATE: MAY 16, 2011 PAGE NO.: 1 OF 7 Polymer Enhanced Zener Diode Micro-Assemblies Specification Status: Preliminary GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode micro-assemblies.

HZU30L-1

Abstract: Zener Diode B1 zener diode 332
Contextual Info: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0200Z Rev.2.00 Aug.18.2003 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.

Contextual Info: PRODUCT: ZEN164V130A24LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27330 REV LETTER: D REV DATE: MAY 29, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable

Contextual Info: PRODUCT: ZEN065V230A16LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27315 REV LETTER: D REV DATE: MAY 11, 2011 PAGE NO.: 1 OF 8 Specification Status: Released GENERAL DESCRIPTION TE PolyZen devices are polymer enhanced, precision Zener diode microassemblies. They offer resettable

HZU10G

Abstract: HZU12G PTSP0002ZA-A zener mark code A2
Contextual Info: HZU-G Series Silicon Planar Zener Diode for Surge Absorption REJ03G1215-0300 Rev.3.00 Jun 08, 2006 Features • Zener diode for surge absorption suitable for IEC 1000-4-2. • Ultra small Resin Package URP is suitable for surface mount design. Ordering Information

ZENER DIODE 1233

Abstract: GRZZ0002ZC-A HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS22 HZS24
Contextual Info: HZS Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0184-0400 Rev.4.00 Jul 06, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

DIODE B3N

Abstract: B2n diode 4.7 B2 zener a3 6 zener B2 Zener HZ22-2 zener diode B2 Zener Diode C3 5 B1 5.6 zener GRZZ0002ZB-A
Contextual Info: HZ-N Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1625-0100 Rev.1.00 Mar 25, 2008 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.

MARKING Z86

Abstract: DIODE Z54 BZX84c39V
Contextual Info: BZX84-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • These diodes are also available in other case styles and other configurations including: the SOD-123 case with type designation BZT52 series, the zener diode common anode configuration in the

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

1ZB220-Y

Abstract: z390 1ZB200-Y 1ZB27 details 1ZB200Y 1ZB330
Contextual Info: 1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation : P = 1.0W z Peak Reverse Power Dissipation : PRSM = 200W at tw = 200 s z Zener Voltage : VZ = 6.8 V to 390 V

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

IRF23N15

Abstract: AN169 MJD340 39A zener diode
Contextual Info: X80070, The Flexible -48V Hot Swap Solution Application Note May 4, 2005 AN169.0 Author: Carlos Martinez Overview zener diode controlling the base of a pass transistor to provide a regulated 12V. With the transistor, a minimum current through the zener provides regulation, while the

DIODE MARKING B82

Abstract: CMZB100 CMZB330 CMZB75
Contextual Info: CMZB68~CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation 0.65 ± 0.2 Unit: mm • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small

BZX584C16-V-G

Contextual Info: BZX584C-V-G-Series Vishay Semiconductors Small Signal Zener Diodes Features • With the BZX584C.-V-G-Series Vishay offers a Z-diode in the tiny SOD-523 plastic package. Made for space sensitive applications the BZX584C.-V-G-Series has a Zener voltage tolerance of ± 5 %

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP3012 Series SP3012 Series 0.5pF Diode Array RoHS Pb GREEN Description The SP3012 integrates either 4 or 6 channels of ultra low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment

D8 marking, SOD123

Contextual Info: AZ23-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23

DIODE D28 06 43

Abstract: AZ23C33-V D22 diode marking code AZ23C3V0 d29 08 BZX84C DZ23 BZT52C AZ23B51-V diode D7 SOD-123
Contextual Info: AZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with

DZ23C3V0-V

Abstract: BZT52C-V DZ23B22-V DZ23C18-V marking v6 zener diode DZ23B24-V dz23c12-v BZX84C-V marking v6 -33 zener diode DZ23B5V1
Contextual Info: DZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are available in other case styles and configurations including: the dual diode common anode configuration with type designation AZ23, the single diode SOT-23 case with the type

UDFN10

Abstract: SP3010 SP3010-04UTG UDFN-10 sp3010-04 Littelfuse TVS Diode Array
Contextual Info: TVS Diode Arrays SPA Family of Products Low Capacitance ESD Protection - SP3010 Series SP3010 Series 0.45pF Rail Clamp Array RoHS Pb GREEN The SP3010 integrates 4 channels of ultra-low capacitance rail-to-rail diodes and an additional zener diode to provide

marking v6 07 diode

Contextual Info: DZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are available in other case styles and configurations including: the dual diode common anode configuration with type designation AZ23, the single diode SOT-23 case with the type

MR2835S

Abstract: MR2835S equivalent MR2835SK load dump pulse load dump test
Contextual Info: MR2835S, MR2835SK Overvoltage Transient Suppressor …designed for applications requiring a diode with reverse avalanche characteristics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power zener diode and will protect