ZENER DIODE 7.5 B Search Results

zener diode

Abstract: CMPZ5234B "Zener Diode" zener diode chip CMPZ5221B CPZ18
Contextual Info: PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 7.5 x 7.5 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å GEOMETRY

1N755

Contextual Info: 1N755 500mW - Silicon Zener Diode. Zener Voltage 7.5 V. Test Current 20 MA. +-10% . Page 1 of 1 Enter Your Part # Home Part Number: 1N755 Online Store 1N755 Diodes 500mW - Silicon Zener Diode. Zener Voltage 7.5 V. Test Current 20 Transistors MA. + -10% Standard Tolerance.

zener diode chip

Abstract: CMPZ5221B CMPZ5234B CPZ18
Contextual Info: PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 X 14 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 7.5 X 7.5 MILS Top Side Metalization Al - 13,000Å TYP Back Side Metalization Au - 14,000Å TYP

Contextual Info: 1N4752 1W Silicon Planar Zener Diode. Nominal Zener Voltage Vz = 33 V. Test Current. Page 1 of 1 Enter Your Part # Home Part Number: 1N4752 Online Store 1N4752 Diodes 1W Silicon Planar Zener Diode. Nominal Zener Voltage Vz Transistors = 33 V. Test C urrent Izt = 7.5 MA.

zener diode chip

Abstract: zener die diode CMPZ5221B CMPZ5234B CPZ18 zener wafer
Contextual Info: PROCESS Zener Diode CPZ18 Central TM Semiconductor Corp. 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 X 14 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 9.5 X 9.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

CMPZ5234B

Abstract: zener diode chip CMPZ5221B CPZ18 Zener Diode
Contextual Info: PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 X 14 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 9.5 X 9.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 14,000Å GEOMETRY

zener diode chip

Abstract: CMPZ5235B CMPZ5261B CPZ19
Contextual Info: PROCESS CPZ19 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 X 18 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 X 11 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 14,000Å GEOMETRY

zener diode chip

Abstract: CMPZ5235B CMPZ5261B CPZ19 Zener diode Diode c 642 zener wafer
Contextual Info: PROCESS CPZ19 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å GEOMETRY

CMPZ5261B

Abstract: zener diode chip CMPZ526 CMPZ5235B CPZ19
Contextual Info: PROCESS Zener Diode CPZ19 Central TM Semiconductor Corp. 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 X 18 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 X 11 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

Zener Diode

Abstract: zener diode chip CMPZ5235B CMPZ5261B CPZ19
Contextual Info: PROCESS CPZ19 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 X 18 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 X 11 MILS Top Side Metalization Al - 13,000Å TYP Back Side Metalization Au - 14,000Å TYP GEOMETRY

953B

Abstract: diode marking 924b 956B 932B diode 955b 931b diode zener DIODE 926B 954b 934B 932B diode zener
Contextual Info: 12. SURFACE MOUNT ZENER DIODE B5921 THRU B5956 1.5WATT PLASTIC SURFACE MOUNT SILICON ZENER DIODES ELECTRICAL CHARACTERISTICS ' TL 30 C UNLESS OTHERWISE NOTED ' NOMINAL ZENER VOLTAGE I— N N > DEVLCE ' VOLTS B5921 65922 6.8 7.5 VF 1.5VOLTS MA IF 200 mA DC FOR ALL TYPES.

IN5374B

Abstract: in5374 IN5373B C3Z10B C3Z11B C3Z12B C3Z47B C3Z50B Zener Diode 1N5368B C3Z52B
Contextual Info: CENTRAL CENTRAL TYPE NO. SEMICONDUCTOR , 3 Watt Zener Diode • 5% Tolerance • Case C Zener Voltage Vz@lz Test Current Iz Zener Impedance Zz Maximum Zener Current IZM mA Volts mA Ohms C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B 6.2 6.8 7.5 8.2 9.1 75 75 75 75

rd6.8a

Abstract: zener rd9.1esb2 rd5.6b RD11UM 09-5 diode RD30F RD6,8MW RD2.4E RD5.1P RD51P
Contextual Info: CD-ROM Diode CD-ROM X13769XJ2V0CD00 09-1 Diode Zener Diode • Zener Diode Quick Reference Surface-Mount Type (1/2) Vz (V) P (W) TYP. 0.15 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 RD2.0UM RD2.2UM RD2.4UM RD2.7UM

1N5388B

Abstract: 1N53 1N5343B 1N5344B 1N5345B 1N5346B 1N5347B 1N5348B 1N5349B DO-201AE
Contextual Info: 1N5343B.1N5388B 5 W Glass Passivated Zener Diode Dimensions in mm. DO-201AE Plastic Voltage 7.5 to 200 V. Power 5.0 W 9.3 ± 0.3 59.5 min. Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

1N3016

Abstract: 1N3051 1N3821 1N3821UR-1 1N3830A JANTX1N3821 Microsemi micronote series 050 DO-202AA zener DIODE 5.1 V 1 watt
Contextual Info: 1N3821 thru 1N3830A, e3 1 Watt Metal Case Zener Diodes SCOTTSDALE DIVISION APPEARANCE This well established zener diode series for the 1N3821 thru 1N3830A JEDEC registration in the glass hermetic sealed DO-13 package provides a low voltage selection for 3.3 to 7.5 volts. It is also well suited for highreliability applications where it is available in JAN, JANTX, and JANTXV

Contextual Info: Zener Diode 500mW MLL5225B to 5256B m iniR eel V olt O rder f N um b er y Mini-MELF SOD 80 3.0V 3.3 V 3.6V 3.9V 4.3V 4.7V 5.1V 5.6V 6.0V 6.2V 6.8V 7.5 V 8.2V 9.1V 10V 12V 13V 14V 15V 16V 18V 20V 22V 24V 27V 28V 30V 70-5225 70-5226 70-5227 70-5228 70-5229 70-5230

1N938

Contextual Info: 1N938 asii SILICON ZENER DIODE D E S C R IP T IO N : The 1 N 9 3 8 is a 9.0 V Silicon T em perature C om pensate Z ener Diode Designed fo r G eneral Purpose V oltage R eference A pplications. P A C K A G E S T Y L E D O -7 M A X IM U M R A T IN G S If 7.5 mA

1N821

Abstract: 1N821 DO-35 1N829A-1 1N825 1N829 1N829A DO-204AH DO-213AA JANTX1N829-1 JANTX1N829UR-1
Contextual Info: 1N821 thru 1N829A-1 DO-35 6.2 & 6.55 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N821 thru 1N829A series of Zero-TC Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal voltages and temperature coefficients to as low as 0.0005%/oC for minimal voltage

1N821

Abstract: 1N822 1N824 1N829 1N829A-1 JANTX1N829-1 RH827 RH829A 1N8272 characteristics curve for zener diode
Contextual Info: 1N821 thru 1N829A-1 DO-7 6.2 & 6.55 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal voltages and temperature coefficients to as low as 0.0005%/oC for minimal voltage

do-213aa solder PAD DIMENSIONS

Abstract: 1N829UR 1N821 1N821UR 1N829 1N829AUR-1 DO-213AA MLL821 MLL829-1
Contextual Info: 1N821UR thru 1N829AUR-1 or MLL821 thru MLL829-1 6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The 1N821UR thru 1N829AUR-1 series of surface mount Zero-TC Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal

do-213aa solder PAD DIMENSIONS

Abstract: JANTX1N829-1 1N821 1N821UR 1N829 1N829AUR-1 DO-213AA MLL821 MLL829-1
Contextual Info: 1N821UR thru 1N829AUR-1, e3 or MLL821 thru MLL829-1, e3 6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes SCOTTSDALE DIVISION APPEARANCE The 1N821UR thru 1N829AUR-1 series of surface mount Zero-TC Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal

Contextual Info: 43E T> SEMITRON INDUSTRIES LTD 013760*1 D000177 7 BISLCB IN4890-4895A series Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS GLASS D07 • This series of Semitron 400 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY as measured

KPB 7300

Abstract: zener 9.5 3.2 v zener diode 5.8 diode zener 1N5229B Zener Diode EQUIVALENT BZV55C4V3 BZV55C6V2 BZV55C12 BZV55C15
Contextual Info: S RoH ant li p C om ZENER DIODES 1 WATT ZENER DIODE/DO-41 CASE 7 PART NO. Zener Breakdown Dynamic Impedances Voltage @ 25 C TA o o Maximum Reverse Current @ Measurement Maximum Forward Voltage o @ 25 C TA Voltage and o 25 C TA IF = 1.0A VZ IZT ZZT IZK ZZK

9c1 zener diode

Abstract: H 48 zener diode 1N4895A DIODE BJE 1N4890 1N4890A 1N4891 1N4895 RH4895A diode BY 127
Contextual Info: M ierosemi Corp. The O'oae experts SANTA A NA, CA i SCOTTSDALE, A Z F o r more information cali: 602 941-6300 DESCRIPTION T his series of M icrosem i 400m W U ltra -S ta b le R eference D iodes offers a C E R T IF IE D R E F E R E N C E VOLTAGE S T A B IL IT Y as m ea su re d over