ZENER B1 6 Search Results

E30A23VR

Abstract: E30A23VS
Contextual Info: SEMICONDUCTOR E30A23VS, E30A23VR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 Zener Voltage : 23V Typ. D1 Average Forward Current : IO=30A. (- Type) E MAXIMUM RATING (Ta=25 CHARACTERISTIC

zener diode b2 12

Abstract: E30A23VR E30A23VS Zener Diode 6 a2 32V zener zener diode a2 11 zener MR a3 zener zener diode 11 b1 A2 12 zener diode
Contextual Info: SEMICONDUCTOR E30A37VS, E30A37VR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 Zener Voltage : 37V Typ. D1 Average Forward Current : IO=30A. (- Type) E MAXIMUM RATING (Ta=25 CHARACTERISTIC

151j CAPACITOR

Abstract: GRM42-6 COG GRM42-6 104k x7r 50 capacitor 104k x7r 50 104k capacitor 100-B300 RESISTOR POTENTIOMETER grm42-6 x7r GRM42-6 X7R 104k
Contextual Info: DB-55008L-318 Component ID B1 B2 C1, C2 C3 C4 C5 C6, C10 C7 C8 C9 D1 L1, L2 L3 L4 R1 R2 R3 TL1 TL2 TL3 TL4 TL5 TL6 TL7 PD55008L Board Description Ferrite Bead Ferrite Bead Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Zener Diode

capacitor

Abstract: RESISTOR POTENTIOMETER GRM188R71H102K philips zener diode c12 GRM188R71H104KA potentiometer resistor capacitor 60 pF STEVAL-TDR016V1 PD55015-E RUBYCON CAPACITOR
Contextual Info: STEVAL-TDR016V1 Component ID Description B1, B2 D1 L1 L2 L3 L4 R1 R2 R3 R4 C1, C2 C3 C4 C5 C6, C12 C7 C8 C9 C10 C11 C13 TL1 TL2 TL3 RF in, RF out PD55015-E Board Ferrite Bead Zener Diode Inductor Inductor Inductor Inductor Resistor Potentiometer Resistor Resistor

B1 6 zener

Abstract: HZU5.1 Hitachi DSA002743
Contextual Info: HZU Series Silicon Epitaxial Planar Zener Diodes for Stabilizer ADE-208-024F Z Rev. 6 Sept. 1, 1998 Features • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Ordering Information Type No. Mark

MARK 11f diode

Abstract: HZM4.3NB1
Contextual Info: Preliminary Datasheet HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer R07DS0358EJ0600 Rev.6.00 May 19, 2011 Features • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.  MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: Preliminary Datasheet HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer R07DS0358EJ0600 Rev.6.00 May 19, 2011 Features • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.  MPAK Package is suitable for high density surface mounting and high speed assembly.

RD15M

Abstract: D47M RD5.1M-B1 RD10M RD11M RD12M RD13M RD16M RD18M RD20M
Contextual Info: ZENER DIODES R D 2 . 0 M —R D 4 7 M 200 mW MINI MOLD ZENER DIODE P ACKAG E DIMENSIONS DESCRIPTION Type RD2.0M to RD47M Series are planar type zener diodes pro­ cessing an allowable power dissipation of 200 mW. in m illim e te rs 0 .6 5 : 8; U FEA TU RES

Contextual Info: HZU Series Silicon Epitaxial Planar Zener Diodes for Stabilizer HITACHI ADE-208-024F Z Rev. 6 Sept. 1, 1998 Features • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Ordering Information Type No.

CA741CE

Abstract: AN6525 HI3306 ms001-b B6 PH Zener diode
Contextual Info: HI3306 6-Bit, 15 MSPS, Flash A/D Converter December 1997 Features Description • CMOS Low Power Typ . . . . . . . . . . . . . . . . . . . . .55mW The HI3306 family are CMOS parallel (FLASH) analog-todigital converters designed for applications demanding

VRE302-6A

Abstract: VRE302-6B VRE302-6C VRE302-6J VRE302-6K VRE302-6L
Contextual Info: VRE302-6 Low Cost Precision Reference THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES • 2.048 V OUTPUT ± 0.205 mV (.01%) PIN CONFIGURATION • TEMPERATURE DRIFT: 0.6 ppm/°C • LOW NOISE: 1.5µV p-p (0.1-10Hz)

VRE306

Abstract: VRE306A VRE306C VRE306J VRE306K VRE306L IN 965 b zener diode
Contextual Info: VRE306 Low Cost Precision Reference THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES • 6.000 V OUTPUT ± 0.600 mV (.01%) PIN CONFIGURATION • TEMPERATURE DRIFT: 0.6 ppm/°C • LOW NOISE: 4µV p-p (0.1-10Hz)

Contextual Info: STP16NK60Z - STB16NK60Z-S STW16NK60Z N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH MOSFET PRELIMINARY DATA TYPE STP16NK60Z STB16NK60Z-S STW16NK60Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.42 Ω

ca3306

Abstract: CA3300 CA741CE 7406 truth table B6 PH Zener diode 74LS04 AN6525 B12 2N DIODE CMOS 4049 internal circuit CA3306A
Contextual Info: CA3306, CA3306A, CA3306C 6-Bit, 15 MSPS, Flash A/D Converters August 1997 Features Description • • • • • • The CA3306 family are CMOS parallel FLASH analog-to-digital converters designed for applications demanding both low power consumption and high speed digitization. Digitizing at 15MHz, for

P011S

Contextual Info: STU26NM60 STU26NM60I N-CHANNEL 600V - 0.125Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STU26NM60 STU26NM60I • ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 0.135Ω < 0.135Ω 26 A 26 A TYPICAL RDS(on) = 0.0125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

26nm60

Abstract: W26NM60 STW26NM60 w26nm60 equivalent U26NM60 26nm60 EQUIVALENT STU26NM60 Zener Diodes 300v STU26NM60I "26nm60"
Contextual Info: STW26NM60 STU26NM60, STU26NM60I N-CHANNEL 600V - 0.125Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM60 STU26NM60 STU26NM60I 600 V 600 V 600 V < 0.135 Ω < 0.135 Ω < 0.135 Ω 30 A 26 A 26 A

Contextual Info: STU26NM60 STU26NM60I N-CHANNEL 600V - 0.120Ω - 26A Max220/Max220I Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STU26NM60 STU26NM60I • ■ ■ ■ ■ VDSS RDS on ID 600V 600V < 0.140Ω < 0.140Ω 26 A 26 A TYPICAL RDS(on) = 0.120Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: HI3306 HARRIS S E M I C O N D U C T O R 6-Bit, 15 MSPS, Flash A/D Converter August 1997 Description Features CMOS Low Power Typ . 55mW Parallel Conversion Technique Single Power Supply V oltage.3V to 7.5V

Dual pnp Dual npn Transistor

Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL
Contextual Info: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated

CA3306

Abstract: CA3300 13b1 zener
Contextual Info: f f l H U U S E M I C O N D U C T O R A R R CA3306 IS CMOS Video Speed 6-Bit Flash A/D Converter December 1993 Features Description • CMOS Low Power w ith Video Speed 70m W Typ. The CA3306 family are CMOS parallel (FLASH) analog-to-digital converters designed for applications demanding both low power

Contextual Info: h a r r is S E M C O N D U C T O R CA 3306, C A 3306A , C A3306C 6-Bit, 1 5 M S P S , Flash A/D C onverters August 1997 Features Description • CMOS Low Power with Video Speed T y p 70mW • Parallel Conversion Technique • Signal Power Supply V o ltage.3V to 7.5V

55C 3V9 ZENER DIODE

Abstract: diode zener 5v1 55c 55C 3V9 ZENER DIODE DATASHEET 55C 3v3 zener diode ratings 55c 6V2 xy 77 55c diode diode zener 7v5 55c BZX55C2V4 BZX55C3V0
Contextual Info: Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Derate above 75°C Value 500 Units mW 4.0 mW/°C -65 to +200

VRE310L

Abstract: VRE310 VRE310A VRE310B VRE310C VRE310J VRE310K
Contextual Info: VRE310 Low Cost Precision Reference THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES • 10.000 V OUTPUT ± 1.000 mV (.01%) PIN CONFIGURATION • TEMPERATURE DRIFT: 0.6 ppm/°C • LOW NOISE: 6µV p-p (0.1-10Hz)

Contextual Info: ££! H A R R IS HI3306 SEMI CONDUCTOR Aprii 1996 C M O S 6 - B it F la s h A /D C o n v e r te r Features Description • CMOS Low Power Typ . 55mW The HI3306 family are CMOS parallel (FLASH) analog-todigital converters designed for applications demanding both