ZENER 7.5 B Search Results

zener diode

Abstract: CMPZ5234B "Zener Diode" zener diode chip CMPZ5221B CPZ18
Contextual Info: PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 7.5 x 7.5 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å GEOMETRY

zener diode chip

Abstract: CMPZ5221B CMPZ5234B CPZ18
Contextual Info: PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 X 14 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 7.5 X 7.5 MILS Top Side Metalization Al - 13,000Å TYP Back Side Metalization Au - 14,000Å TYP

1N5648

Abstract: LN5644 11 p IN5662A 1N5645 1N5629 1N5629A 1N5630 1N5630A 1/DIODE 1n564 1N5631A
Contextual Info: Zener Type No. Zene Voltage tlzT Volts @ mA Max. Zener Impedance @ Izi Ohms Zener Voltage Tolerance 1N5629 1N5629A 1N5630 1N5630A 6.8 6.8 7.5 7.5 10 10 10 10 1N5631 1N5631A 1N5632 1N5632A 1N5633 1N5633A 1N5634 1N5634A 1N5635 1NS635A 1N5636 1N5636A 1N5637 1N5637A

1N3812

Abstract: 1N3685 1N3702 1N3707 1N3678 1N3679 1N3680 1N3681 1N3682 1N3683
Contextual Info: Zener Type No. Max. Zener Impedance @ Ut Ohms Zener Voltage Tolerance No Suffix = 2 0 % Suffix A =i 1 0 % Suffix B = 5 % /, „ 9.1 10.0 11.0 14.0 12.5 11.5 7.5 8.5 9.5 12.0 13.0 15.0 10.5 9.5 8.5 11.5 13.0 16.0 16.0 18.0 20.0 7.8 7.0 6.2 1N3087 1N3688 1N3689

Contextual Info: TEMPERATURE COMPENSATED ZENER REFERENCE DIODES JEDEC P art Number i i i i i i Nominal Zener Zanar Test Voltage Currant V. Votta t„ |fflA) 6.2 7.5 Minimum Maximum Maximum Effective ;Si2s8iS£s5 ZSjSeiKS Mexlmum Voltage Zener P ack age Voltage Voltage Temperature Temperature Temperature

CZ633

Contextual Info: iiiii CZ6316 Series • 500 mWatt Low Noise Zener Diodes Nominal Zener Voltage 'Z2 +/- 5% Minimal Zener Voltage ® i2, 250|jA Test Current <Zz @ V a ) (Vz i ) *22 Type Volts Volts mA CZ6321 7.5 8.2 6.6 20 20 CZ6322 CZ6323 CZ6324 CZ6325 CZ6326 CZ6327 CZ6328

zener diode chip

Abstract: CMPZ5235B CMPZ5261B CPZ19 Zener diode Diode c 642 zener wafer
Contextual Info: PROCESS CPZ19 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å GEOMETRY

Zener Diode

Abstract: zener diode chip CMPZ5235B CMPZ5261B CPZ19
Contextual Info: PROCESS CPZ19 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 X 18 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 X 11 MILS Top Side Metalization Al - 13,000Å TYP Back Side Metalization Au - 14,000Å TYP GEOMETRY

MTZJ SERIES ZENER DIODES

Abstract: zener 6b1 6b2 zener zener 5.1
Contextual Info: LESHAN RADIO COMPANY, LTD. MTZJ SERIES ZENER DIODES MTZJ MTZJ SERIES ZENER DIODES Package Dimensions: DO-35 VZ V Zener Voltage Z Part No (Thin suffix) Voltage A 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 MTZJ 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 1.880-2.100

Contextual Info: I • inn CZ4954 Series • 5 Watt Zener Diodes Nomina! Zener « Iz, <Vz> Type Volts CZ4954 CZ4955 CZ4956 CZ4957 CZ4958 6.8 7.5 8.2 CZ4959 CZ4960 CZ4961 CZ4962 CZ4963 CZ4964 CZ4965 CZ4966 CZ4967 CZ4968 CZ4969 CZ4970 CZ4971 CZ4972 CZ4973 CZ4974 CZ4975 CZ4976

p9nk80

Abstract: B1 6 zener F9NK80Z smps 220 6 P9NK80Z Zener Diode B1 9 STF9NK80Z STP9NK80Z LE32
Contextual Info: STP9NK80Z STF9NK80Z N-CHANNEL 800V -0.9Ω - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP9NK80Z STF9NK80Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V <1.2 Ω <1.2 Ω 7.5 A 7.5 A

1N5349b

Abstract: 1N5360B 1N2982B 1N5339B 1N2981B 1N5353B CZ5354B 1N2986B 1n3311b 1N5335B
Contextual Info: Zener Diodes Continued POWER 5.0 WATT 10 WATT 50 WATT CASE AX-5W DO-201 DO-4* TO-3 50 mil * DO-5* ZENER VOLTAGE INDUSTRY STANDARD RECOMMENDED FOR NEW DESIGNS GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7

BZV55C12

Abstract: BZV55C6V8 BZV55C4V3 BZV55C6V2 BZV55C15
Contextual Info: SMD Zener Diodes Continued 500mW POWER 1.0 W %> % SOD-80 CASE PREFERRED ZENER VOLTAGE INDUSTRY STANDARD 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 CLL5221B* CLL5222B*

ma 8127

Contextual Info: 3KPSMC28A GPP TRANSIENT VOLTAGE SUPPRESSOR 3000 WATT PEAK POWER 7.5 WATTS STEADY STATE FEATURES * * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 3000 watt surage capability at 1ms Excellent clamping capability Low zener impedance

3KP28A

Contextual Info: 3KP28A GPP TRANSIENT VOLTAGE SUPPRESSOR 3000 WATT PEAK POWER 7.5 WATTS STEADY STATE FEATURES * * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 3000 watt surage capability at 1ms Excellent clamping capability Low zener impedance

zener 5B1

Abstract: 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N965B
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N9 SERIES ZENER DIODES 1N9 1N9 SERIES ZENER DIODES 4.5 5.5 6.5 7.5 8.5 9.5 11.5 13 16 17 21 25 29 33 41 49 58 70 80 93 105 125 150 185 230 270 330 400 500 750 900 1100 1500 1700 2200 2500 700 700 700 700 700 750 750 750 750 750

Contextual Info: SZ6A7.5 thru SZ6A270 SOLID STATE DEVICES, INC. 6.0 W, 8.0W, and 10W 7.5 - 270 VOLTS ZENER DIODES 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 Designer's Data Sheet FEATURES: • Hermetically Sealed in Glass • Metallurically Bonded

SZ3B430

Abstract: SZ3B130 SZ3B10 SZ3A24 SZ3A13 SZ3A12 SZ3A10 SZ3A220 SZ3A510 SZ2B
Contextual Info: SZ3A7.5 thru SZ3A510 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 3.0 W and 4.W 7.5 – 510 VOLTS ZENER DIODES DESIGNER’S DATA SHEET FEATURES:

Contextual Info: SZ6A7.5 thru SZ6A270 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 6.0 W, 8.0W, and 10W 7.5 - 270 VOLTS ZENER DIODES Designer's Data Sheet FEATURES: • Hermetically Sealed in Glass • Metallurically Bonded

1N5349

Abstract: 1n 5349 5366B 5342B 1N5346 5343 IN 5347 5361B 1N5352 5349B
Contextual Info: GENERAL PURPOSE & INDUSTRIAL ZENER DIODES STANDARD ZENER DIODES Type Vz t ' I z t * 'Z T * nom. V 5W P P P P P P P P P P P P P P P P P P / (mA) r Z T 'IZ T * Tolerance on nominal V j P : Preferred voltages. 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2

lN555

Abstract: 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557 1N5558 1N5559
Contextual Info: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5

1N561 JAN

Abstract: IN5552 IN5618 DIODE lN555 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556
Contextual Info: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5

1N3016

Abstract: 1N3051 1N3821 1N3821UR-1 1N3830A JANTX1N3821 Microsemi micronote series 050 DO-202AA zener DIODE 5.1 V 1 watt
Contextual Info: 1N3821 thru 1N3830A, e3 1 Watt Metal Case Zener Diodes SCOTTSDALE DIVISION APPEARANCE This well established zener diode series for the 1N3821 thru 1N3830A JEDEC registration in the glass hermetic sealed DO-13 package provides a low voltage selection for 3.3 to 7.5 volts. It is also well suited for highreliability applications where it is available in JAN, JANTX, and JANTXV

BZY9

Contextual Info: BZY9 1 series Voltage Range 7.5 - 75 Volts 5 00 0 W att Peak Pulse Power 100 W att Steady State @ 25°C 75 W att Steady State @ 65°C M ECHANICAL CHARACTERISTICS FEATURES Polarity: Indicated by direction of zener symbol • Weight: 14 grammes excluding mounting