ZENER 7.5 B Search Results

1N827A

Abstract: 1N4565 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N829
Contextual Info: TC ZENER DIODES 250mW cont. Pari# Nominal Zener Voltage Min. Max. Test Current VzOO 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A 5.9 5.9 5.9 5.9 5.9 5.9 5.9 5.9 5.9 5.9 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 6.5 7.5 7.5 7.5 7.5 7.5 7.5 7.5

zener diode

Abstract: CMPZ5234B "Zener Diode" zener diode chip CMPZ5221B CPZ18
Contextual Info: PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 13.8 x 13.8 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 7.5 x 7.5 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å GEOMETRY

1N755

Contextual Info: 1N755 500mW - Silicon Zener Diode. Zener Voltage 7.5 V. Test Current 20 MA. +-10% . Page 1 of 1 Enter Your Part # Home Part Number: 1N755 Online Store 1N755 Diodes 500mW - Silicon Zener Diode. Zener Voltage 7.5 V. Test Current 20 Transistors MA. + -10% Standard Tolerance.

zener diode chip

Abstract: CMPZ5221B CMPZ5234B CPZ18
Contextual Info: PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 X 14 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 7.5 X 7.5 MILS Top Side Metalization Al - 13,000Å TYP Back Side Metalization Au - 14,000Å TYP

1N5648

Abstract: LN5644 11 p IN5662A 1N5645 1N5629 1N5629A 1N5630 1N5630A 1/DIODE 1n564 1N5631A
Contextual Info: Zener Type No. Zene Voltage tlzT Volts @ mA Max. Zener Impedance @ Izi Ohms Zener Voltage Tolerance 1N5629 1N5629A 1N5630 1N5630A 6.8 6.8 7.5 7.5 10 10 10 10 1N5631 1N5631A 1N5632 1N5632A 1N5633 1N5633A 1N5634 1N5634A 1N5635 1NS635A 1N5636 1N5636A 1N5637 1N5637A

953B

Abstract: diode marking 924b 956B 932B diode 955b 931b diode zener DIODE 926B 954b 934B 932B diode zener
Contextual Info: 12. SURFACE MOUNT ZENER DIODE B5921 THRU B5956 1.5WATT PLASTIC SURFACE MOUNT SILICON ZENER DIODES ELECTRICAL CHARACTERISTICS ' TL 30 C UNLESS OTHERWISE NOTED ' NOMINAL ZENER VOLTAGE I— N N > DEVLCE ' VOLTS B5921 65922 6.8 7.5 VF 1.5VOLTS MA IF 200 mA DC FOR ALL TYPES.

Contextual Info: 1N4752 1W Silicon Planar Zener Diode. Nominal Zener Voltage Vz = 33 V. Test Current. Page 1 of 1 Enter Your Part # Home Part Number: 1N4752 Online Store 1N4752 Diodes 1W Silicon Planar Zener Diode. Nominal Zener Voltage Vz Transistors = 33 V. Test C urrent Izt = 7.5 MA.

IN5374B

Abstract: in5374 IN5373B C3Z10B C3Z11B C3Z12B C3Z47B C3Z50B Zener Diode 1N5368B C3Z52B
Contextual Info: CENTRAL CENTRAL TYPE NO. SEMICONDUCTOR , 3 Watt Zener Diode • 5% Tolerance • Case C Zener Voltage Vz@lz Test Current Iz Zener Impedance Zz Maximum Zener Current IZM mA Volts mA Ohms C3Z6.2B C3Z6.8B C3Z7.5B C3Z8.2B C3Z9.1B 6.2 6.8 7.5 8.2 9.1 75 75 75 75

1N3812

Abstract: 1N3685 1N3702 1N3707 1N3678 1N3679 1N3680 1N3681 1N3682 1N3683
Contextual Info: Zener Type No. Max. Zener Impedance @ Ut Ohms Zener Voltage Tolerance No Suffix = 2 0 % Suffix A =i 1 0 % Suffix B = 5 % /, „ 9.1 10.0 11.0 14.0 12.5 11.5 7.5 8.5 9.5 12.0 13.0 15.0 10.5 9.5 8.5 11.5 13.0 16.0 16.0 18.0 20.0 7.8 7.0 6.2 1N3087 1N3688 1N3689

Contextual Info: TEMPERATURE COMPENSATED ZENER REFERENCE DIODES JEDEC P art Number i i i i i i Nominal Zener Zanar Test Voltage Currant V. Votta t„ |fflA) 6.2 7.5 Minimum Maximum Maximum Effective ;Si2s8iS£s5 ZSjSeiKS Mexlmum Voltage Zener P ack age Voltage Voltage Temperature Temperature Temperature

CZ633

Contextual Info: iiiii CZ6316 Series • 500 mWatt Low Noise Zener Diodes Nominal Zener Voltage 'Z2 +/- 5% Minimal Zener Voltage ® i2, 250|jA Test Current <Zz @ V a ) (Vz i ) *22 Type Volts Volts mA CZ6321 7.5 8.2 6.6 20 20 CZ6322 CZ6323 CZ6324 CZ6325 CZ6326 CZ6327 CZ6328

zener diode chip

Abstract: zener die diode CMPZ5221B CMPZ5234B CPZ18 zener wafer
Contextual Info: PROCESS Zener Diode CPZ18 Central TM Semiconductor Corp. 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 X 14 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 9.5 X 9.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

CMPZ5234B

Abstract: zener diode chip CMPZ5221B CPZ18 Zener Diode
Contextual Info: PROCESS CPZ18 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14 X 14 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 9.5 X 9.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 14,000Å GEOMETRY

zener diode chip

Abstract: CMPZ5235B CMPZ5261B CPZ19
Contextual Info: PROCESS CPZ19 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 X 18 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 X 11 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 14,000Å GEOMETRY

CMPZ5261B

Abstract: zener diode chip CMPZ526 CMPZ5235B CPZ19
Contextual Info: PROCESS Zener Diode CPZ19 Central TM Semiconductor Corp. 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 X 18 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 X 11 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

Zener Diode

Abstract: zener diode chip CMPZ5235B CMPZ5261B CPZ19
Contextual Info: PROCESS CPZ19 Zener Diode 0.5 Watt Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 18 X 18 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 X 11 MILS Top Side Metalization Al - 13,000Å TYP Back Side Metalization Au - 14,000Å TYP GEOMETRY

1N31

Contextual Info: 400 mW & 500 mW, Glass, TC irnrc JtUtU TYPE NUMBER ZENER VOLTAGE Vz VOLTS Min. Max. TEST CURRENT 1ZT MAXIMUM ZE N E R IM PEDANCE Zzt @ I zt VOLTAGE TEM PER ATU RE STABILITY A V zt Max. mA Ohms mV °C 9.45 9.45 9.45 7.5 7.5 7.5 20 20 20 67 139 184 0 to + 75

MTZJ SERIES ZENER DIODES

Abstract: zener 6b1 6b2 zener zener 5.1
Contextual Info: LESHAN RADIO COMPANY, LTD. MTZJ SERIES ZENER DIODES MTZJ MTZJ SERIES ZENER DIODES Package Dimensions: DO-35 VZ V Zener Voltage Z Part No (Thin suffix) Voltage A 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 MTZJ 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 1.880-2.100

Contextual Info: I • inn CZ4954 Series • 5 Watt Zener Diodes Nomina! Zener « Iz, <Vz> Type Volts CZ4954 CZ4955 CZ4956 CZ4957 CZ4958 6.8 7.5 8.2 CZ4959 CZ4960 CZ4961 CZ4962 CZ4963 CZ4964 CZ4965 CZ4966 CZ4967 CZ4968 CZ4969 CZ4970 CZ4971 CZ4972 CZ4973 CZ4974 CZ4975 CZ4976

ZY18

Abstract: ZY15 ZY150 ZY-15
Contextual Info: ZY 7.5 E A fiO R ^ ZY 200 2 W Zener Diodes D im ensions in mm. DO-15 Plastic Voltage 7.5 to 200 V Power 2.0 W Mounting instructions 1. Min. distance from body to soldering point, 4 mm. >Diffused junction 2. Max. solder temperature, 350 °C, 3. Max. soldering time, 3,5 sec.

p9nk80

Abstract: B1 6 zener F9NK80Z smps 220 6 P9NK80Z Zener Diode B1 9 STF9NK80Z STP9NK80Z LE32
Contextual Info: STP9NK80Z STF9NK80Z N-CHANNEL 800V -0.9Ω - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP9NK80Z STF9NK80Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V <1.2 Ω <1.2 Ω 7.5 A 7.5 A

P9NK80Z

Abstract: p9nk80 F9NK80Z STP9NK80Z b 0409 h STF9NK80Z
Contextual Info: STP9NK80Z STF9NK80Z N-CHANNEL 800V -0.9Ω - 7.5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP9NK80Z STF9NK80Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V <1.2 Ω <1.2 Ω 7.5 A 7.5 A

1N5349b

Abstract: 1N5360B 1N2982B 1N5339B 1N2981B 1N5353B CZ5354B 1N2986B 1n3311b 1N5335B
Contextual Info: Zener Diodes Continued POWER 5.0 WATT 10 WATT 50 WATT CASE AX-5W DO-201 DO-4* TO-3 50 mil * DO-5* ZENER VOLTAGE INDUSTRY STANDARD RECOMMENDED FOR NEW DESIGNS GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7

1N5012A

Abstract: 1N4465 1N4475 1N5025 1n5022 1N4469 1N4474 1N5932B 10 watt zener diode 1N5008A
Contextual Info: Zener Diodes POWER 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 30 2.0 WATT 1.5 WATT DO-41 CASE ZENER VOLTAGE Continued HIGH PERFORMANCE INDUSTRY STANDARD 1N4460 1N4461 1N4462 1N4463 1N4464 1N4465 1N4466 1N4467