ZEN XF 2 Search Results

Contextual Info: / f - c D 5 B N UNTERNEHMEN VON - 5 T - O 7 Keramik-Kondensatoren fur die professionelle Elektronik Ceramic Capacitors for professional electronics Roederstein Keram ische Vielschicht-SM D-Kondensatoren, Klasse 1B und Klasse 2 C eram ic m ultilayer S M D capacitors,

oszillator

Abstract: ZEN xf 2 DES 4
Contextual Info: CK 3 CK 3 Oktode Die CK 3 ist eine Oktode nach dem Vierbündelprinzip. Sie ist bis auf die Heizdaten mit der Vierbündeloktode EK 3 für Wechselstromempfän­ ger identisch. Nur wurde wegen des 100-Volt-Betriebes das sechste Gitter etwas geändert. Die für die EK 3 gemachten Angaben gelten auch

oszillator

Abstract: EK 110 ZEN xf 2 Langwelle oszillatorfrequenz
Contextual Info: EK 3 EK 3 Oktode Die Röhre E K 3 ist eine Mischröhre n ach dem Oktodenprinzip m it m ax48 w esentlich verbesserten E igen sch aften . D urch die B ündelung der E lek ­ tronenbahnen sind einige nachteilige E ffekte a u f ein M indestm aß h erab­ gesetzt worden. D ie E K 3 g e statte t im Kurzw ellenbereich eine ebenso

b0806

Abstract: 1470 LM B0803 mops 686 tip 127 texas instruments SMJ320C30 SMJ320C31 SMQ320C32 D2399
Contextual Info: SMQ320C32 DIGITAL SIGNAL PROCESSOR S P R S 04 4- MAY 1996 Military Operating Temperature Range - 55°C to 125°C; QML Processing Eight Extended-Precisión Registers Two Address Generators With Eight Auxiliary Registers and Two Auxiliary Register Arithmetic Units ARAUs

Contextual Info: EL2041C élantec EL2041C Wideband, Fust Settling, Unity Gain Stable, Operational Amplifier HIGH PERFORMANCE ANALOG fNT£6ftATED C1RCUÜS F e a tu r e s G en era l D e sc r ip tio n • O p e n lo o p u n i t y b a n d w i d th — 90 M H z The EL2041 is a unity gain stable monolithic operational ampli­

AD584

Abstract: AD581S AD584J AD584KH AD584LH AD584S AD584SH AD584TH AD584UH transistor 2n222
Contextual Info: A N A LO G D E V IC E S FEATURES Four Programmable Output Voltages: 10.000V , 7 .50 0 V , 5.0 0 0 V , 2.500V Laser-Trimmed to High Acouracies No External Components Required Trimmed Temperature Coefficient: 5pprn/°C max, 0 to +70° C A D 584L H 10ppm/°C max, -5 5 °C to +125°C (A D 584U H )

Contextual Info: bq20z80 www.ti.com SLUS625B – SEPTEMBER 2004 – REVISED DECEMBER 2004 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH ImpedanceTrack TECHNOLOGY FOR USE WITH THE bq29312 FEATURES • • • • • • • • • • • • • • Patented ImpedanceTrack Technology

unseal BQ2084

Abstract: unseal BQ20z80 103AT bq20z80 bq20z80DBT bq20z80DBTR bq29312 bq29400 VIT140 0x2673
Contextual Info: bq20z80 www.ti.com SLUS625B – SEPTEMBER 2004 – REVISED DECEMBER 2004 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH ImpedanceTrack TECHNOLOGY FOR USE WITH THE bq29312 FEATURES • • • • • • • • • • • • • • Patented ImpedanceTrack Technology

ELLS 110

Abstract: AD561 AD561J AD561K AD561S AD561T
Contextual Info: ANALOG DEVICES ► Low Cost 10-Bit Monolithic D/A Converter FEATURES Low Co st Complete Current Output Converter High Stability Buried Zener Reference Laser Trimmed to High Accuracy 1/4LSB Max Error, A D 561K , T Trimmed Output Application Resistors for 0 to +10, ±5

Contextual Info: Octal 8-Bit CMOS D/A Converter DAC-8800 A N A LO G D E V IC E S □ F E A TU R ES G EN E R A L D ESCRIPTIO N * • * • * * • • The DAC-8800 TrimDAC is designed to be a general purpose digitally controlled voltage adjustment device. The output voltage range can be independently set for each set of four D/A

Contextual Info: bq20z80 www.ti.com SLUS625B – SEPTEMBER 2004 – REVISED DECEMBER 2004 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH ImpedanceTrack TECHNOLOGY FOR USE WITH THE bq29312 FEATURES • • • • • • • • • • • • • • Patented ImpedanceTrack Technology

Contextual Info: bq20z80 www.ti.com SLUS625A – SEPTEMBER 2004 – REVISED NOVEMBER 2004 SBS 1.1-COMPLIANT GAS GAUGE ENABLED WITH ImpedanceTrack TECHNOLOGY FOR USE WITH THE bq29312 • • • • • • • • • • • • • • Patented ImpedanceTrack Technology

b3170

Abstract: B 3170 schlenzig B3170V "halbleiterwerk frankfurt" electronica reihe B3371 LM 3171 B3171V electronica band
Contextual Info: »Uxe Strom­ versorgung Referenzquelle Le/stungs- und UberstromBegrenzung, Temperaturschutz verstarker electrónica • Band 239 KLAUS SCHLENZ1G D IE T E R JU N G D ie in te g r ie r te n S p a n n u n g s re g le r B3x7xV M ILITÄR V E R LA G D E R D EU T SC H E N D EM O K R A TISC H EN

Contextual Info: tm â n S w it c h x- „ FEATURES DESCRIPTION • DS3 payload access, bit-serial or nibble-parallel • C-bit parity or M13 operating mode • C-bit interface 13 C-bits in, 14 out • Detect and generate DS3 AIS, and idle signals • Transmit reference generator for serial operation

14MQ

Contextual Info: Tem ic SÌ9730 S e m i c o n d u c t o r s Dual-Cell Lithium Ion Battery Control IC Features • • • • • • Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing

L20DC

Abstract: 14MQ
Contextual Info: Tem ic SÌ9730 S e m i c o n d u c t o r s Dual-Cell Lithium Ion Battery Control IC Features • • • • • • Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing

Contextual Info: tm â n S w it c h x- „ FEATURES DESCRIPTION • DS3 payload access, bit-serial or nibble-parallel The DS3F is designed for DS3 fram er applications in which broadband payloads are mapped into the 44.736 Mbit/s DS3 frame format. Although the C-bit parity for­

ABB 07 kr 240

Abstract: IC-8176 12h24 fbii nitto GE D6453 T108 ptc PD6453 PD6453GT-101
Contextual Info: M O S*tt0 SS MOS Integrated Circuit u P D645 3 CMOS LSI ’V'f ?n=r > £ * - ? izffiAfr b l t X TV, t ' T * * T -i X 9 & £ // P D 6 4 5 3 i , _hC H ^iJ, -f-v V 7 > /f ffl C M 0 S L S I T ' T o fz, • -? -> '< & • h ' 6 0 X :? : £ ^ 7 * t ~ & ^ ' > • x ; iJ - > ' ^ - V 7 ^ i ' * f V X

Contextual Info: L l f l C A B _ LT1103/LT1105 TECHNOLOGY O fflin e S w itc h in g R e g u la to r F€flTUR€S D C S C R IPTIO n • ± 1% The L T 1 1 0 3 ■ Switch F re q u e n c y up to 2 0 0 k H z high ■ Int ernal 2 A S w i t c h a n d C u r r e n t S e n s e L T 1 1 0 3

Contextual Info: A N A LO G DEVICES Precision Micropower, Low Dropout, Voltage References REF19x Series PIN C O N FIG U R A TIO N S FEATURES Initial Accuracy: ± 2 m V max Tem perature Coefficient: 5 p pm /°C max Low Supply Current: 45 jiA max Sleep Mode: 15 (jiA max Low Dropout Voltage

BIT 3195

Abstract: ATT20C409 att20c490 DG157S ramdac
Contextual Info: A Data Sheet May 1995 ART Microelectronics ATT21C499: 24-Bit Interface RAMDAC Dual Clock Synthesizers PrecisionDAC Technology Features Application Differences • 170/135 MHz speed grades The ATT21C499 uses a 68-pin PLCC package. The signal footprint around the perimeter of the ’499 is

TRANSISTOR A107

Abstract: 230v to 30v step down transformer circuit transistor a105 bridge rectifier 240V AC a105 transistor transformer 240v A 12V 230v to 12v ac step down transformer RUTTONSHA all diodes E2480 h7c1
Contextual Info: CHAPTER 11 APPLICATION NOTE 939A A Universal 100kHz Power Supply Using a Single HEXFET* By S. CLEMENTE, 8. PEU.Y, ft. RUTTONSHA Summary Power MOSFETs are attractive candidates for use in switching power supplies. In order to take full advant­ age of their unique characteristics,

T 4148

Abstract: T4148 M28B USBN9602 USBN9602-28M ECS-48
Contextual Info: November 1998 USBN9602 Universal Serial Bus Full Speed Function Controller With DMA Support 1.0 General Description The USBN9602 is an integrated USB Node controller com ­ patible with the USB Specification Versions 1.0 and 1.1. Integrated onto a single IC are the required USB trans­

M28B

Abstract: USBN9602
Contextual Info: 1* National November 1997 Semiconductor USBN9602 Universal Serial Bus Full Speed Function Controller With DMA Support 1.0 General Description The USBN9602 is an integrated USB Node controller com­ patible with the USB Specification Version 1.0. Integrated