ZD 6V8 Search Results

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

Contextual Info: GAL16V8Z GAL16V8ZD Lattice Zero Power E2CMOS PLD FEATURES FU N C TIO N AL B LO C K D IAG R AM • ZER O PO W ER E2C M O S TEC H N O LO G Y — 100|jA Standby Current — Input Transition Detection on G AL16V8Z — Dedicated Pow er-dow n Pin on G AL16V8ZD — Input and Output Latching During Pow er Down

Contextual Info: GAL16V8Z GAL16V8ZD Lattica ;Semiconductor I Corporation Zero Power E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES ZERO POWER E2CMOS TECHNOLOGY — 100|iA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down

Contextual Info: GAL16V8Z GAL16V8ZD Lattice' ; Semiconductor I Corporation Zero Power E2CMOS PLD Functional Block Diagram Features ZERO POWER E2CMOS TECHNOLOGY — 100 liA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD

similar ic book

Contextual Info: LATTICE SE MICONDUCTOR böE D Bi SBÖbTHT ÜGG5753 S5T « L A T Lattice G A L16V8Z G A L16V8ZD Zero Power E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • ZERO POWER E’ CMOS TECHNOLOGY — 100|iA Standby Current — Input Transition Detection on GAL16V8Z

GAL16V82D

Contextual Info: GAL16V8Z GAL16V8ZD ILatticer 5 •! ■ Semiconductor ■■■■Corporation • ZERO POWER E’CMOS TECHNOLOGY — 100|oA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and O utput Latching During Power Down

Contextual Info: GAL16V8Z GAL16V8ZD •ill a ttire :LdlllUC ■■■■■■ Corporation Zero Power E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • ZERO POWER E2CMOS TECHNOLOGY — 100|iA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD

16v8z

Abstract: 16V8ZD
Contextual Info: GAL16V8Z GAL16V8ZD I Semiconductor I Corporation Zero Power E2CMOS PLD l/CLK - > - ZERO POWER E2CMOS TECHNOLOGY — 100jjA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down

P320S

Abstract: F16V8BQ 16v8b pld program 16R8
Contextual Info: Features * Industry Standard Architecture - Emulates Many 20-pin PALs - Low-cost Easy-to-use Software Tools * High-speed Electrically-erasable Programmable Logic Devices - 7.5 ns Maximum Pin-to-pin Delay * Several Power Saving Options Device lcc, Standby

P16V8

Abstract: F16V P320S eZI3
Contextual Info: Features Industry Standard Architecture - Emulates Many 20-Pin PALs - Low Cost Easy-to-Use Software Tools High-Speed Electrically Erasable Programmable Logic Devices - 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options Device lcc, Stand-By lcc, Active

ZD 5V6

Abstract: ZD 6v8 6V8A z 5v1 Z14A 5z82 5Z180 7v5, b4ga4,5z
Contextual Info: ^ 7 # S G S -T H O M S O N R Æ r a m iO T t M O S SM 5Z 3V3A -> 200A ZENER DIODES NEW SERIE • HIGH SURGE CAPABILITY UP TO : 180W @ 8.3ms ■ LARGE VOLTAGE RANGE : 3.3V -> 200V SURFACE MOUNT TRAN SIL FEATURES ■ A PERFECT PICK AND PLACE BEHAVIOUR ■ AN EXCELLENT ON BOARD STABILITY

L16V

Abstract: 16V8Z
Contextual Info: Lattice' GAL16V8Z GAL16V8ZD Zero Power E2CMOS PLD FEATURES • ZERO POWER E2CMOS TECHNOLOGY — 100 jA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down • HIGH PERFORMANCE E2CMOS TECHNOLOGY

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

Contextual Info: Product specification BZX284 Series SOD110 Unit: mm Features Total Power Dissipation: Max. 400mW Two Tolerance Series: 2% and cathode idenfifier 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation

ZVN4310A

Abstract: ZVN4424AC
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 100 Volt vDS * * < W “ °-5Q Spice model available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tarnjj=25°C

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: MMSZ4681 – MMSZ4717 500mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Planar Die Construction      500mW Power Dissipation 2.4V – 43V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application

ZFW MARKING

Abstract: 6V8A zdx 1000 marking zfw SM5Z200A ZFW MARKING CODE ZFG 28 zener zfw Zdw 31 ZFW 3-9
Contextual Info: SbE D • 7 T 2 T 23 7 □□mS'ì'ì TTD ■ S G T H S G S -T H O M S O N EL[i OT(s *S s 6 s-thomson t-im s t S M 5 Z 3 V 3 A -> 2 0 0 A ZENER DIODES N EW S E R IE ■ HIGH SURGE CAPABILITY UP TO : 180W@ 8.3ms ■ LARGE VOLTAGE RANGE : 3.3V -> 200V S U R F A C E M O U N T T R A N S IL F E A T U R E S

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

BTS550P

Abstract: BTS 550P Q67060-S6952A3 650P q67060s6952a3
Contextual Info: PROFET Data Sheet BTS550P Smart Highside High Current Power Switch Reverse Save Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio • Reverse battery protection by self turn on of

BB 555

Abstract: BTS550P LOGIC CHIP 650P BTS550P Q67060-S6952A3
Contextual Info: PROFET Data Sheet BTS550P Smart Highside High Current Power Switch Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio Reversave • Reverse battery protection by self turn on of

BTS550P LOGIC CHIP

Abstract: 650P BTS550P Q67060-S6952A3 q67060s6952a3
Contextual Info: PROFET Data Sheet BTS550P Smart Highside High Current Power Switch Reversave  Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio • Reverse battery protection by self turn on of

RT8525

Abstract: RT8301 RS845 RS18 r7732 sop24 DS830
Contextual Info: RT8301 8-CH Constant Current LED Driver for Display Backlight General Description The RT8301 is a 8-CH constant current sink LED drivers with Dynamic Headroom Control DHC function. RT8301 can provide well current matching ability, adjustable VSET to choose the suitable dropout voltage across the MOS /