ZAG 2 V Search Results
ZAG 2 V Price and Stock
Texas Instruments SN74V293-15PZAFIFO 65536 x 18 Synch FIF O Memory |
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SN74V293-15PZA | 61 |
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Samtec Inc CPAS-133-ZAGT-13DVIC & Component Sockets |
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CPAS-133-ZAGT-13DV |
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Texas Instruments SN74V293-15PZAG4FIFO 65536x18 Synchronous FIFO Memory ALT 595 ALT 595-SN74V293-15PZA |
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SN74V293-15PZAG4 |
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Carling Technologies VBB2S001-1ZZAG-100Rocker Switches VBB2S0011ZZAG100 |
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VBB2S001-1ZZAG-100 |
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ZAG 2 V Datasheets Context Search
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ic 4018
Abstract: ZAG 2 V Gardner Denver Adapter INLINE 5
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-B-626 ic 4018 ZAG 2 V Gardner Denver Adapter INLINE 5 | |
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Contextual Info: 1/2 Conformity to RoHS Directive EMC Filters for AC Power Line For Single-phase, Mid-size Box Cased ZAG-M Series SAFETY STANDARD FEATURES • The ZAG-M series employ a highly efficient thermal design, which ensures high current handling capacity in a compact |
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ZAG2250-M | |
ZAG 2 V
Abstract: ZAG2220-11S ZAG2206-11S ZAG2210-11S ZAG2230-11S
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ZAG-11S ZAG2230-11S ZAG 2 V ZAG2220-11S ZAG2206-11S ZAG2210-11S ZAG2230-11S | |
ZAG2250-M
Abstract: zag-m e9131
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ZAG2250-M ZAG2250-M zag-m e9131 | |
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Contextual Info: 1/2 002-01 / 20050506 / e9131_zag_m.fm EMC Components ZAG-M Series EMC Filters for AC Power Line For Single-phase, Mid-size Box Cased FEATURES • The ZAG-M series employ a highly efficient thermal design, which ensures high current handling capacity in a compact |
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ZAG2250-M | |
ZAG-M
Abstract: ZAG2250-M
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ZAG2250-M ZAG-M ZAG2250-M | |
ZAG2220-11S
Abstract: ZAG2206-11S ZAG2210-11S ZAG2230-11S
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ZAG-11S ZAG2230-11S ZAG2220-11S ZAG2206-11S ZAG2210-11S ZAG2230-11S | |
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Contextual Info: ADVANCED INTERCONNECTIONS Peel-A-Way Zig Zag Sockets 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 • Tel. 4 0 1 -8 2 3 -5 20 0 • FAX 401-823-8723 Dual In-line Peel-A-Way® Zig Zag Sockets - JflQ TVP TTÍ .030 r?6) Type -85 Terminal Shown Other Terminal Types Available |
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KZD01S-85TG KZD016-85TG KZD018-85TG KZD01m | |
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Contextual Info: 64K x 32 BiCMOS/CMOS STATIC RAM MODULE IDT7MP4036 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 2 megabit static RAM module • Low profile 64 pin ZIP Zig-zag In-line vertical Package or 64 pin S IM M (Single In-line Memory Module) |
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IDT7MP4036 IDT7MP4036 | |
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Contextual Info: 64K X 32 BiCMOS/CMOS STATIC RAM MODULE IDT7MP4036 Integrated Device Technology, Inc* FEATURES: DESCRIPTION: • High density 2 megabit static RAM module • Low profile 64 pin ZIP Zig-zag In-line vertical Package or 64 pin S IM M (Single In-line Memory Module) |
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IDT7MP4036 IDT7MP4036 | |
M51132LContextual Info: MITSUBISHI SOUND PROCESSORS M51132L,FP 2 CHANNEL ELECTRONIC VOLUME BALANCE DESCRIPTION The M 5 1 1 3 2 L is a sem iconductor integrated circuit fo r dual PIN CONFIGURATION TOP VIEW channel electronic volume balance control. T4] It is housed in a 14-pin plastic molded zig-zag line package |
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M51132L 14-pin | |
64k X 8 30-pin SIMMContextual Info: Pa r a d ig m ' PDM4M4030 64K x 32 CMOS Static RAM Module Features: □ High-density 2 megabit Static RAM module □ Low profile 64-pin ZIP Zig-zag In-line vertical Package or 64-pin SIMM (Single In-line Memory Module) □ Ultra fast access time: 10 ns (max.) |
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PDM4M4030 64-pin PDM4M4030 64k X 8 30-pin SIMM | |
McKenzie socket divisionContextual Info: ZIP Sockets E L E C T R O N I C S MK McKenzie Socket Division Features LOW PROFILE • For high density m em ory using vertical •lOO (4,19 J TYP. zig -zag in-line patterns _L n r X .125 T (3,17) -.020 (0,51) TYP. Specify Contact/Shell 001B • Available in 16, 18, 2 0 , 2 4 , and 2 8 positions |
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Gold/200 Gold/10 Gold/200n, Tin/200p" McKenzie socket division | |
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Contextual Info: PDM4M4030 64K x 32 CMOS Static RAM Module Features: n n n n n n n High-density 2 megabit Static RAM module Low profile 64-pin ZIP Zig-zag In-line vertical Package , 64-pin SIMM or Angled SIMM (Single In-line Memory Module) Ultra fast access time: 10 ns (max.) |
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PDM4M4030 64-pin PDM4M4030 | |
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S500Contextual Info: 2.54mm Female Header - single & dual row - E-tec - Dual Entry Type - the Swiss connection BB1-5xx- BB1-1xx- BB2-3xx- BB2-5xx- BB2-7xx- P.C.B. Hole Layout 1 row - zig-zag pin-out 1 row - single sided pin-out 2 rows - 2.54mm, 5.08mm & 7.62 pin spacing SPECIFICATIONS |
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Contextual Info: Paradigm ' 64K x 32 CMOS Static RAM Module Features: □ High-density 2 megabit Static RAM module □ Low profile 64-pin ZIP Zig-zag In-line vertical Package or 64-pin SIMM (Single In-line Memory Module) □ Ultra fast access time: 10 ns (max.) □ Surface mounted plastic components on an epoxy |
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PDM4M4030 64-pin PDM4M4030 | |
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Contextual Info: Paradigm ’ P D M 4 M 4 1 1 0 512K x 32 CMOS Static RAM Module Features □ High-density 2 megabyte Static RAM module □ Low profile 72-pin ZIP Zig-zag In-line vertical Package or 72-pin SIMM (Single In-line Memory Module) □ Fast access time: 15 ns (max.) |
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72-pin PDM4M4110 PDM4M4110 | |
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Contextual Info: PRELIMINARY PDM4M4110 512K x 32 CMOS Static RAM Module Features n n n n n n High-density 2 megabyte Static RAM module Low profile 72-pin ZIP Zig-zag In-line vertical Package or 72-pin SIMM (Single In-line Memory Module) Fast access time: 15 ns (max.) Surface mounted plastic components on an epoxy |
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PDM4M4110 72-pin PDM4M4110 i/15/96 | |
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Contextual Info: Paradigm PD M 4 M 4110 512K x 32 CMOS Static RAM Module Features □ High-density 2 megabyte Static RAM module □ Low profile 72-pin ZIP Zig-zag In-line vertical Package or 72-pin SIMM (Single In-line Memory Module) □ Fast access time: 15 ns (max.) □ Surface mounted plastic components on an epoxy |
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72-pin PDM4M4110 PDM4M4110 | |
1OC05Contextual Info: H Y U N D A I H Y M 5 V 3 2 1 2 0 A IM I 32-bit CMOS X -S e r íe s DRAM MODULE DESCRIPTION The HYM5V32120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor |
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32-bit HYM5V32120A HY51V18160B 22fiF HYM5V32120ATXG/ASLTXG DQ0-DQ31) 1DC05-10-AUG95 HYM5V32120A/ASL 1OC05 | |
ba 4918
Abstract: EK53 488P ba+4918
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8333Q> EI73383 LNa9180314 A5866 M5366< FUS04 w6/43 ba 4918 EK53 488P ba+4918 | |
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Contextual Info: Sony Package Product Name . . Features P a c k a g e name D e s c r ip t io n Symbol Material* DUAL I I P «ifi* IN LI NK PACKAGE P 2. 54m m I10UMIL) C SINGLE IN L I N E S I P 2.54mm P ÍJ 0 0 M Í L ) PACKAGE 2.54mm ZIG ZAG Z Standard 1 P IN L I N E |
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I10UMIL) I100MIL) 778mlat V50MIL) 50MIL | |
ROE roederstein
Abstract: ROE EH capacitors
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10th/11th ROE roederstein ROE EH capacitors | |
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Contextual Info: SK 70 DT SEMITOP 3 GSPR GSSRJ G=SR T= U EV W <6477 %0+4)*.%0? G YFF DMFF G VFF DOFF <Q- U VF X$? PZ [F =Q FV PZ [F =Q DO D[FF DEFF PZ [F =Q DE Symbol Conditions T= Q- U VF X$ TQPR ._* Values Units EV W QA¥ U ON X$] DF &QA¥ U DON X$] DF &QA¥ U ON X$] VJM KKK DF &- |
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