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    TT Electronics Power and Hybrid / Semelab Limited

    TT Electronics Power and Hybrid / Semelab Limited BUZ900P

    N CHANNEL MOSFET, 160V, 8A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; MSL:- RoHS Compliant: Yes
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    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Contextual Info: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


    OCR Scan     		BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D PDF

    NO10V

    Abstract: buz901 buz906p BUZ901P
    Contextual Info: Z900P BUZ901P M E C H A N IC A L DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 4.69 (0.185) 5.31 (0.209) 1.49 2.49 * 15.49(0.610) *16.26 a oc in e /n i (0.640) * (0.059) (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    OCR Scan     		BUZ900P BUZ901P BUZ905P BUZ906P Z900P Z901P NO10V buz901 buz906p BUZ901P PDF