Z3 SOT Search Results

Contextual Info: Package outline Leadless surface-mounted package; plastic cap; 16 terminations ZD2 10x e (2×) e2 (2×) 1 ZD1 (10×) e1 (12×) 2 3 SOT775A 4 Z (8×) Z3 5 ZE1 (10×) ZE2 (10×) 16 6 15 7 14 8 Z4 Z2 L (16×) Z6 (36×) 13 12 11 10 9 b1 (2×) b (14×) Z5 (36×)

Contextual Info: Package outline Leadless surface-mounted package; plastic cap; 8 terminations b1 8x e ZD (2×) 1 (6×) 2 Z5 (2×) b (8×) 3 SOT567A Z1 (6×) 1 4 2 Z3 (35×) 3 4 6 5 Z4 (2×) Z (4×) Z2 (35×) L (6×) Z7 (12×) 8 7 6 5 8 Z8 (10×) Dimensions of terminations

Contextual Info: Package outline Leadless surface-mounted package; plastic cap; 16 terminations e1 L1 4x L (12×) e1 b (12×) 1 2 3 Z6 (12×) L3 (4×) 5 e2 e b2 (2×) Z4 (12×) Z (2×) Z5 (4×) 4 L2 16 b4 (4×) (4×) 15 SOT559A Z1 (2×) Z3 (2×) 6 14 Z7 (6×) e b7 (4×)

Contextual Info: Package outline Leadless surface-mounted package; plastic cap; 18 terminations ZD2 10x e3 (2×) ZE2 (12×) e4 (2×) 1 e (2×) 2 e1 (2×) e2 (2×) 3 4 ZD1 (10×) e3 (2×) 5 SOT796A Z (7×) Z3 6 ZE1 (12×) 18 Z4 Z6 (48×) 7 e1 (4×) 17 Z2 8 16 9 e4 (2×)

Contextual Info: BfcfllHEWLJETT WLliM PACKARD H P 832 2 0 A D CS1800 T est S et Tfechnical Data 1710 MHz to 1880 MHz HP 8922 Series GSM RF Test Sets HP 83220A DCS1800 Test Set .1-:^ □ 0 Q S 0 g E 3 S lG ^ !Z3 QDCSCS m r i ; } Q - ; a •■ 0 3 i:- £ & E . m QCSi Gj 3

bzx98c

Abstract: 1N30098 Z3813 Z3827 in137
Contextual Info: SEU ITRO N IN D U S T R IE S LTD 43E 013700^ D QGGD 1 S 3 4 B1 S L C B rT'-lU\"7 IN3900/IN2900/Z3 S E R I E S Hermetically Sealed •Voltage Regulator Diode Released to BS9305-F079 ■Voltage Range 3.0 to 400 Volts 10.0 Watt Steady State ■400 Watt Peak Power

47z7

Abstract: E-222 SOT649
Contextual Info: PDF: 2002 Feb 25 Philips Semiconductors Package outline Leadless surface mounted package; plastic cap; 12 terminations e1 4x b (18×) e (14×) L2 (4×) 7 Z7 (2×) 1 2 3 4 5 6 Z3 Z6 (2×) b1 (14×) 8 (4×) 21 9 20 10 19 11 L1 (8×) 17 16 15 14 13 Z (8×)

AVX 0603 MTBF

Abstract: high power FET transistor s-parameters FP2189 GETEK RF transistors with s-parameters FET transistors with s-parameters RF power transistors with s-parameters 115Z4 transistor z3
Contextual Info: FP2189 The Communications Edge TM Preliminary Product Information 1 Watt HFET Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package

RF transistors with s-parameters

Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
Contextual Info: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package

MG271H

Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

Contextual Info: Document Number: MMG15241H Rev. 1, 4/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,

Contextual Info: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

Contextual Info: Package outline Leadless surface-mounted package; plastic cap; 12 terminations ZD 2x e 1 (4×) 2 e1 (4×) SOT632A Z5 (4×) Z (2×) 3 4 5 e2 (2×) 12 6 Z2 (6×) Z7 (4×) Z4 (8×) L (12×) 11 b (8×) 10 9 b1 (4×) 8 7 Z8 Dimensions of terminations Z1 (4×)

ro4003

Abstract: FPD1500SOT89 RO-4003 5.8ghz
Contextual Info: EB1500SOT89AJ FPD1500SOT89 5.2GHz TO 5.8GHz EVALUATION BOARD FEATURES • 26dBm Output Power • 10dB Gain ¥ 1.6dB Noise Figure @ 5V, 200mA ¥ 42dBm OIP3 ¥ SOT89 Surface Mount Package DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

SGA8343z

Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to

zener diode zx 12

Abstract: zener diode zx 47 marking code zt sot23 sot-23 MARKING CODE Y.2 zx 9.1 BZX84C2V4 MARKING ZT SOT23 Z11 Marking Code BZX84C
Contextual Info: BZX84C2V4 Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208

Contextual Info: BZX84C2V4 Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208

Contextual Info: BZX84C2V4 Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS * “G” Lead Pb -Free Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V 3 1 Mechanical Data: 2 SOT-23 *Case : SOT-23 Molded plastic

Contextual Info: BZX84C2V4 Series Surface Mount Zener Diodes SMALL SIGNAL ZENER DIODES 225m WATTS Features: *225mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.4V to 75V 3 Mechanical Data: 1 *Case : SOT-23 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208

Contextual Info: SOT-1 Device SONET STS-1 Overhead Terminator TXC-03001 DATA SHEET Prelim inary DESCRIPTION - -= -• = The SOT-1 SONET/STS-1 Overhead Terminator per­ forms section, line and path overhead processing for STS-1 SONET signals. This versatile device can be

JD 1801 PIN DIAGRAM

Abstract: RTCO Z511A epoch t14 12D1C-D ET 723 TAIS SOT TA-NWT-000253 s004152 0Q0043
Contextual Info: SOT-1 Device SONET STS-1 Overhead Terminator TXC-03001 DATA SHEET Preliminary FEATURES DESCRIPTION Provides SONET interface to any type of payload = The SOT-1 SONET/STS-1 Overhead Terminator per­ forms section, line and path overhead processing for STS-1 SONET signals. This versatile device can be

TAIS SOT

Abstract: D103 D113 D123 TA-NWT-000253 LTE 6.5 mb
Contextual Info: SOT-1 Device SONET STS-1 Overhead Terminator TXC-03001 DATA SHEET Preliminary FEATURES DESCRIPTION • Provides SONET interface to any type of payload The SOT-1 SONET/STS-1 Overhead Terminator performs section, line and path overhead processing for STS-1 SONET signals. This versatile device can be

SOT56

Abstract: BGS67A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D818 BGS67A 65 MHz, 25.5 dB gain reverse amplifier Product specification Supersedes data of 2002 Jun 06 2002 Sep 06 Philips Semiconductors Product specification 65 MHz, 25.5 dB gain reverse amplifier FEATURES BGS67A PINNING - SOT567A