Z12 L Search Results
Z12 L Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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MM1Z12L
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AK Semiconductor | Silicon Planar Zener Diodes in SOD-123FL package, with a power dissipation up to 500mW, zener voltage range from 2.0V to 75V, ±5% tolerance, and lead-free design compliant with RoHS directives. | Original |
Z12 L Price and Stock
Central Semiconductor Corp CMOZ12L-TR-PBFREEDIODE ZENER 12V 250MW SOD523 |
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CMOZ12L-TR-PBFREE | Cut Tape | 22,620 | 1 |
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Everlight Electronics Co Ltd HPL3535CZ12-LW40175X33350-1TLED 4000K SMD |
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HPL3535CZ12-LW40175X33350-1T | Cut Tape | 12,000 | 1 |
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Diodes Incorporated GDZ12LP3-7DIODE ZENER 12V 250MW 2DFN |
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GDZ12LP3-7 | Digi-Reel | 4,762 | 1 |
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GDZ12LP3-7 | Reel | 12 Weeks | 10,000 |
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GDZ12LP3-7 | Cut Tape | 8,889 | 5 |
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GDZ12LP3-7 | 1 |
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GDZ12LP3-7 | 10,000 | 14 Weeks | 10,000 |
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Texas Instruments LM385Z-1.2-LFT3IC VREF SHUNT -2.43%/+2.02% TO92 |
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LM385Z-1.2-LFT3 | Cut Tape | 1,275 | 1 |
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TE Connectivity LKZ12L1LABEL ID/RATINGS 0.49"DIA BK/BLK |
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LKZ12L1 | Bag | 3,040 |
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LKZ12L1 | Bulk | 3,040 |
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LKZ12L1 |
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LKZ12L1 |
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Z12 L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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z12vContextual Info: T-1 3mm RESISTOR LED LAMP Features z12 L934YD12V YELLOW VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE. zAVAILABLE |
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L934YD12V DSAA1798 JUN/11/2001 L934YD12V z12v | |
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Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • 7^4142 FEATURES • • • • • • • QGISSÔR 02Ô « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure |
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IRF9Z14/Z15 IRF9Z10/Z12 O-220 IRF9Z10 7Tb4142 00122C | |
7580Contextual Info: 3DUW1XPEHU .0': PP/ '&/867(5 www.SunLED.com HDWXUHV z122)%8,/7,1PP/('/$0365('3&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 z&$1352'8&($1<&2/25,19,6,%/( 63(&7580,1&/8',1*:+,7(/,*+7 z5R+6&203/,$17 |
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Contextual Info: 3DUW1XPEHU .6*: PP/ '&/867(5 www.SunLED.com 35(/,0,1$5<63( & HDWXUHV z122)%8,/7,1PP/('/$036*5(13&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 z&$1352'8&($1<&2/25,19,6,%/( 63(&7580,1&/8',1*:+,7(/,*+7 |
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00LQContextual Info: 3DUW1XPEHU ;.050*: PP/ '&/867(5 www.SunLED.com HDWXUHV z+,*+9,6,%,/,7< z(0,77,1*&2/255('$1'*5(1 z122)%8,/7,1PP/('/$036683(5%5,*+75(' 3&6683(5%5,*+7*5(13&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 |
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Contextual Info: 3DUW1XPEHU .0': PP/ '/$03&/867(5 www.SunLED.com HDWXUHV z+,*+9,6,%,/,7< z122)%8,/7,1PP/('/$0365('3&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 * |
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330 j73 Tantalum Capacitor
Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
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MW4IC001MR4 MW4IC001NR4 MW4IC001 MW4IC001NR4 330 j73 Tantalum Capacitor j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1 | |
200B
Abstract: 20AWG 700B M252 SD57120
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SD57120 SD57120 TSD57120 200B 20AWG 700B M252 | |
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Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics |
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MRF6404/D MRF6404 MRF6404 DCS1800 PCS1900/Cellular | |
TRANSISTOR A331
Abstract: 395C-01
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MRF6404/D MRF6404 DCS1800 PCS1900/Cellular TRANSISTOR A331 395C-01 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage |
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MW7IC2040N MW7IC2040N MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from |
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AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1 | |
atc 17-25
Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
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AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, atc 17-25 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027 | |
Transistor J182
Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA
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MRF9100/D MRF9100 MRF9100R3 MRF9100SR3 MRF9100 MRF9100R3 Transistor J182 MRF9100SR3 08053G105ZATEA | |
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CRCW08051000FKTA
Abstract: MHV5IC2215N J088 TAJA105K035R 01145 A113 A114 A115 AN1955 AN1987
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MHV5IC2215N MHV5IC2215NR2 MHV5IC2215NR2 CRCW08051000FKTA MHV5IC2215N J088 TAJA105K035R 01145 A113 A114 A115 AN1955 AN1987 | |
D260-4118-0000
Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
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MRFE6VS25N MRFE6VS25NR1 MRFE6VS25GNR1 MRFE6VS25N D260-4118-0000 MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac | |
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Contextual Info: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these |
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MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3 | |
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Contextual Info: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from |
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MRF284/D MRF284 MRF284SR1 DEVICEMRF284/D | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 4, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these |
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MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100 | |
transistor c36
Abstract: J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet
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MRF1570T1/D MRF1570T1 MRF1570T1/D transistor c36 J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet | |
A07T
Abstract: MRF1508 MRF1508T1 a06t 520 uF variable capacitor motorola AN211A A05T-5 MRF1508 equivalent Nippon capacitors RF1508
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MRF1508/D MRF1508 MRF1508T1 DEVICEMRF1508/D A07T a06t 520 uF variable capacitor motorola AN211A A05T-5 MRF1508 equivalent Nippon capacitors RF1508 | |
369A-10
Abstract: MJD32 MOTOROLA motorola MOSFET 935 NIPPON CAPACITORS mrf284 power MJD31 MJD32 MRF284 MRF284S B6C1
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MRF284/D MRF284 MRF284S MRF284 DEVICEMRF284/D 369A-10 MJD32 MOTOROLA motorola MOSFET 935 NIPPON CAPACITORS mrf284 power MJD31 MJD32 MRF284S B6C1 | |
MRF9045MBR1
Abstract: MRF9045MR1 6020G
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MRF9045MR1/D MRF9045MR1 MRF9045MBR1 MRF9045MBR1 6020G | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from |
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AFT09MS031N AFT09MS031NR1 AFT09MS031GNR1 AFT09MS031NR1 | |