Z12 L Search Results

L934ID12V

Contextual Info: T-1 3mm RESISTOR LED LAMP Features z12 L934ID12V HIGH EFFICIENCY RED VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE.

z12v

Contextual Info: T-1 3mm RESISTOR LED LAMP Features z12 L934YD12V YELLOW VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE. zAVAILABLE

xck-p IEC 947.5.1

Abstract: XCS-Z11 XCS-Z13 xck-p 102 XCS-Z15 XCS-Z12 XCS-Z14 XCS-Z21 xps-fb resistencia electrica con
Contextual Info: +-tm XCS-PA/TA Safety interlock switch Interrupteurs de sécurité Sicherheits-Positionsschalter Interruptores de seguridad Interruttori di sicurezza Interruptores de segurança XCS-TA XCS-Z11 XCS-Z12 Radios de accionamiento de las llaves lengüetas

L934GD12V

Abstract: optical resistor
Contextual Info: T-1 3mm RESISTOR LED LAMP Features z12 L934GD12V GREEN VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE. zAVAILABLE

L934SGD12V

Contextual Info: T-1 3mm RESISTOR LED LAMP Features z12 L934SGD12V SUPER BRIGHT GREEN VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE.

L934SRD12V

Contextual Info: T-1 3mm RESISTOR LED LAMP Features z12 L934SRD12V SUPER BRIGHT RED VOLT SERIES IN T-1 PACKAGES. zINTEGRAL zNO CURRENT LIMITING RESISTOR. EXTERNAL CURRENT LIMITER REQUIRED WITH 12 VOLT SUPPLY. zCOST EFFECTIVE - SAVE SPACE AND RESISTOR COST. zWIDE VIEWING ANGLE.

SMD marking Z12

Abstract: marking CM smd Z12 Z33 SMD z39 smd bidirectional zener diodes zener smd marking 51 CMZ30 zener smd marking smd z13
Contextual Info: • CM Z12 Series SMD Package Appearance Maxim um Ratings Characteristic Symbol Rating Unit Power Dissipation P 2 W Junction Temperature Tj 150 Storage Temperature Tstg -4 0 to 150 •c •c = 3^ I Zener Characteristics ¿ener impedance Measurement rd (O)

Contextual Info: SAMSUNG ELECTRONICS INC b4E ]> • 7^4142 FEATURES • • • • • • • QGISSÔR 02Ô « S U G K P-CHANNEL POWER MOSFETS IRF9Z14/Z15 IRF9Z10/Z12 TO-220 Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

MT1115F

Abstract: MT1115 MTI115F 115F
Contextual Info: MTI115F - CL FCR33.86M2G Udd= 5 EU] Fig.a~d Ta= 20 Ldeq] Load inq capoc itance dependence of osc i11at inq character ist ics (CL1-Z12) MT1115F - I CLI/CL2 [pF] Rf [Mohm] 7 5 3 - 5 / 5 1 a . UIH/UIL FCR33.86M2G Ta= 20 [deg] 0-0 T yp ica l «- K lilarst

7580

Contextual Info: 3DUW1XPEHU .0': PP/ '&/867(5 www.SunLED.com HDWXUHV z122)%8,/7,1PP/('/$0365('3&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 z&$1352'8&($1<&2/25,19,6,%/( 63(&7580,1&/8',1*:+,7(/,*+7 z5R+6&203/,$17

Contextual Info: 3DUW1XPEHU .6*: PP/ '&/867(5 www.SunLED.com 35(/,0,1$5<63( & HDWXUHV z122)%8,/7,1PP/('/$036*5(13&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 z&$1352'8&($1<&2/25,19,6,%/( 63(&7580,1&/8',1*:+,7(/,*+7

Contextual Info: 3DUW1XPEHU .050*: PP/ '&/867(5 www.SunLED.com HDWXUHV z+,*+9,6,%,/,7< z(0,77,1*&2/255('$1'*5(1  z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 z5R+6&203/,$17

00LQ

Contextual Info: 3DUW1XPEHU ;.050*: PP/ '&/867(5 www.SunLED.com HDWXUHV z+,*+9,6,%,/,7< z(0,77,1*&2/255('$1'*5(1 z122)%8,/7,1PP/('/$036683(5%5,*+75(' 3&6683(5%5,*+7*5(13&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6

Contextual Info: 3DUW1XPEHU .0': PP/ '/$03&/867(5 www.SunLED.com HDWXUHV z+,*+9,6,%,/,7< z122)%8,/7,1PP/('/$0365('3&6 z:$7(53522)3$&.$*(:,7++22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 *

AGR045010

Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Contextual Info: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

100B120JP500X

Abstract: 100B430JP500X 100B4R7CP500X AN1955 C1210C104K5RACTR MW4IC001MR4 RO4350 T491X226K035AS
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC001MR4/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier MW4IC001MR4 The MW4IC001MR4 wideband integrated circuit is designed for use as a

J293

Contextual Info: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s

330 j73 Tantalum Capacitor

Abstract: 600S1 J162 600S100 100B4R7
Contextual Info: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest

J327

Abstract: 726 j68 j139
Contextual Info: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest

200B

Abstract: 20AWG 700B M252 SD57120
Contextual Info: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed • INTERNAL INPUT MATCHING

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

TRANSISTOR A331

Abstract: 395C-01
Contextual Info: MOTOROLA MRF6404 NPN Silicon RF Power Transistor LIFETIME BUY The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

TRANSISTOR A331

Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to

TRANSISTOR A331

Abstract: transistor 31C 37281 ADC 50 Ghz MRF6404K A153 A331 DCS1800 MRF6404 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Contextual Info: MOTOROLA Order this document by MRF6404/D SEMICONDUCTOR TECHNICAL DATA MRF6404 MRF6404K The RF Line NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to