Z0 706 Search Results

transistor B1010

Abstract: ifx780 fast page mode dram controller 74F244 74F257 A-20 DA10 I960 MC88915 AP-704
Contextual Info: A AP-706 APPLICATION NOTE DRAM Controller for 40 MHz i960 CA/CF Microprocessors Sailesh Bissessur SPG EPD 80960 Applications Engineer Intel Corporation Embedded Processor Division Mail Stop CH5-233 5000 W. Chandler Blvd. Chandler, Arizona 85226 February 2, 1995

TMS320DM6446-594

Abstract: SN74 CDC706 CDC906 CDCE706 CDCE906 PI6CX100 PLL1705 SCAA080A TMS320DM6446
Contextual Info: Application Report SCAA080A – August 2006 – Revised November 2007 CDCx706/x906 Termination and Signal Integrity Guidelines Alexander Pakosta and Giuseppe Mazzoleni . Clock Drivers ABSTRACT

AT84CS001

Abstract: AT84AS008 AT84AS001 RO4003 TS83102G0B BDC 07 atmel 550 atmel 1050
Contextual Info: Atmel AT84CS001 DMUX Application Note 1. Introduction This application note aims at providing you some recommendations to help you interface the AT84CS001 DMUX to Atmel ADCs TS83102G0B 10-bit 2 Gsps ADC and AT84AS008 10-bit 2.2 Gsps ADC . It first presents how to connect the DMUX to these

FR4 substrate epoxy dielectric constant 4.4

Abstract: FR4 epoxy dielectric constant 4.4 FR4 substrate epoxy dielectric constant 4.6 MC100EL16 RO4003 TS8308500 TS8308500GL TSX8308500GL meander line PCB
Contextual Info: ADC 8-bit 500 Msps TSEV8308500 Evaluation Board . User Guide Table of Contents Section 1 Overview . 1-1

c 3866 transistor

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ. NF = 1.2 dB typ at f = 900 MHz Outline CM PAK 2 2. Base 3. Collector

25GbE

Abstract: pms 01c H336 F4240 H344 1N1Z2 A139 E1
Contextual Info: DEVICE SPECIFICATION &21 ,' 17,$/ Multi-Rate Performance Monitor with Forward Error Correction S3062 AMCC S3062 SONET/SDH/Gigabit Ethernet Multi-Rate Performance Monitor with Forward Error Correction Revision D Applied Micro Circuits Corporation 6290 Sequence Drive, San Diego, CA

CQFP68

Abstract: d5 diod FR4 epoxy dielectric constant 4.4 RO4003 MC100EL16 TS8388B TS8388BGL FR4 epoxy dielectric constant 4.2 FR4 epoxy dielectric constant 3.2
Contextual Info: ADC 8-bit 1 Gsps TSEV8388B Evaluation Board . User Guide Table of Contents Section 1 Overview . 1-1

Contextual Info: 2SC4899 Silicon NPN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fT = 9 G H z Typ • H igh gain, low noise figure PG = 14.0 dB Typ, N F = 1.2 dB Typ at f = 900 M H z Outline CMPAK 2 700 1. Emitter

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

P3H7

Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma
Contextual Info: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high

ABE 422

Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
Contextual Info: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high

TDB 1390

Abstract: 706 B34 A74 marking B92 02 diode marking B44 b92 diode diode marking b34 marking A32 HYR1625640G-653 HYR1625640G-840
Contextual Info: HYR 16xx40G/HYR 18xx40G Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,

SM-118A

Abstract: ET1-1-75-3 MABA-008184-CT17TB M513 MABA-008184-CT1760 CURRENT TRANSFORMER PCB MOUNT PCB MOUNT CURRENT TRANSFORMER SM-118-A
Contextual Info: RoHS Compliant 1:1 Transformer with tap 50-870MHz MABA-008184-CT1760 V1 Features • • • • • • Schematic Surface Mount 1:1 Impedance 260°C Reflow Compatible RoHS* Compliant RoHS version of ET1-1-75-3 Available on Tape and Reel. Reel quantity 900

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 2 1. E m itter

Z0 706

Abstract: M513 MABA-007970-CT74TB MABACT0017 MABACT0074 MABACT0074TR 50-870MHz
Contextual Info: RoHS Compliant 2.66:1 Transmission Line Transformer 50-870MHz Features • • • • • • • MABACT0074 V1P Schematic Surface Mount 2.66:1 Impedance Excellent amplitude and phase balance 260°C Reflow Compatible RoHS* Compliant RoHS version of MABACT0017

LB 1639

Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

SM-118-A

Abstract: M513 MABA-008184-CT1760 MABA-008184-CT17TB
Contextual Info: RoHS Compliant 1:1 Transformer with tap 50-870MHz MABA-008184-CT1760 V1 Features • • • • • • Schematic Surface Mount 1:1 Impedance 260°C Reflow Compatible RoHS* Compliant RoHS version of ET1-1-75-3 Available on Tape and Reel. Reel quantity 900

SL6 TRANSISTOR

Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 • 1. 2. 3.

Lorch

Abstract: AT84AS008 AT84CS001 R04003 RO4003 6DF12-1400 5LP7-1000X-MP
Contextual Info: Atmel AT84AS008 ADC 1. Introduction This application note aims at providing you some recommendations to implement the AT84AS008 10-bit 2.2 Gsps ADC in your system. It first presents the ADC input/output interfaces and then provides some recommendations as regards the device settings and board layout to obtain the best

M513

Abstract: MABA-007970-CT74TB MABACT0017 MABACT0074 MABACT0074TR
Contextual Info: RoHS Compliant 2.66:1 Transmission Line Transformer 50-870MHz Features • • • • • • • MABACT0074 V1P Schematic Surface Mount 2.66:1 Impedance Excellent amplitude and phase balance 260°C Reflow Compatible RoHS* Compliant RoHS version of MABACT0017

transistor hitachi

Abstract: HITACHI VC-6045
Contextual Info: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 1 ! S a!l!tlQr £

TC200G02 toshiba

Abstract: TC200G70 bt816 cnh 743 YMUX24H toshiba TC200 CNH 532 TC200E240 Transistor AC 51 0865 75 834 BT16ODFS
Contextual Info: ASIC DATA BOOK TC200G/E SERIES MACROCELLS Non-liner Delay Models 1997 ASIC Data Book TC200G/E SERIES MACROCELLS (Non-linear Delay Models) Published in July, 1996 Document ID: 451V1CA (C) Copyright 1996 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The

HVQFN24

Abstract: IESS-308 MO-220 T115 IESS-308 standard IESS-308/309 phase noise specification
Contextual Info: TFF11115HN Low phase noise LO generator for VSAT applications Rev. 1 — 24 March 2011 Product data sheet 1. General description The TFF11115HN is a Ku band frequency generator intended for low phase noise Local Oscillator LO circuits for Ku band VSAT transmitters and transceivers. The specified