Z 8.0 MHZ Search Results
Z 8.0 MHZ Price and Stock
| Abracon Corporation ABLS-8.000MHZ-B2-TCrystals 8.0 MHZ 18PF 80 OHMAUTO | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | ABLS-8.000MHZ-B2-T | 71,412 | 
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| Abracon Corporation ABM3B-8.000MHZ-B2-TCrystals 8.0 MHZ 18PF 200OHM | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | ABM3B-8.000MHZ-B2-T | 66,257 | 
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| Abracon Corporation ABM8G-48.000MHZ-18-D2Y-TCrystals 48.0 MHZ 18PF -40+85C | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | ABM8G-48.000MHZ-18-D2Y-T | 14,061 | 
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| Abracon Corporation ASEM1-8.000MHZ-LC-TStandard Clock Oscillators Oscillator 3225 4-SMD 8MHz +/-50ppm -40C - 85C CMOS 3.3V | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | ASEM1-8.000MHZ-LC-T | 11,300 | 
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| Abracon Corporation ABM8W-48.0000MHZ-6-D1X-T3Crystals Xtal 3225 4-SMD 48MHz Tol +/-10ppm Stab +/-20ppm -40C - 85C 6pF 30 Ohms | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | ABM8W-48.0000MHZ-6-D1X-T3 | 11,017 | 
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Z 8.0 MHZ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| "Indicator Lamps"
Abstract: 85122 LED water level indicator using 4 led LED NIGHT LAMP CIRCUIT Indicator Lamps mil grade LED lamps Oxley Group str 1229 2STR/LH23 night vision led 
 | Original | OXL/CLH/63/- OXL/CLH/63/P/- STR/501/LH/8/- OXL/CLH/80/- STR/LH23/10/- 2STR/LH23/10/- 3STR/LH23/10/- OXL/CLH/100/- OXL/CLH/100/P/- OXL/MIL50/- "Indicator Lamps" 85122 LED water level indicator using 4 led LED NIGHT LAMP CIRCUIT Indicator Lamps mil grade LED lamps Oxley Group str 1229 2STR/LH23 night vision led | |
| crystal 27 hc52
Abstract: QUARTZ hc52 71-XX 
 | Original | HC-52/U 71xxA 71xxB 15MHz MIL-H-10056: 50ppm 300MHz: D-74922 crystal 27 hc52 QUARTZ hc52 71-XX | |
| k2952
Abstract: 2SK2952 
 | Original | 2SK2952 k2952 2SK2952 | |
| Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC | Original | ||
| Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC | Original | ||
| Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC | Original | ||
| Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC | Original | ||
| Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC | Original | ||
| Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 70 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC 0.012 Ω | Original | ||
| E E Elektronik GmbHContextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 70 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC 0.012 Ω | Original | ||
| k2952Contextual Info: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Chopper Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = 100 µA (max) (VDS = 400 V) | Original | 2SK2952 k2952 | |
| Contextual Info: CSM -9 Low profile 8.0 x 4.5 mm Footprint Extended Temp Range Option RoHS Compliant SM D QU ART Z CRY ST AL The CSM-9 is a compact SMD Crystal. The 8.0 x 4.5 x 1.8 mm ceramic package is ideal for today's SMD manufacturing environment. OPERATING CONDITIONS / ELECTRICAL CHARACTERISTICS | Original | ECS-200-20-35-TR | |
| HA 12058
Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor 
 | OCR Scan | NE680 HA 12058 TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor | |
| k2845Contextual Info: 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSIII 2SK2845 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance | Original | 2SK2845 SC-64 k2845 | |
|  | |||
| K2841
Abstract: 2-10P1B 2SK2841 
 | Original | 2SK2841 K2841 2-10P1B 2SK2841 | |
| Contextual Info: 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2841 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) | Original | 2SK2841 | |
| Contextual Info: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.) | Original | 2SK2733 | |
| 2-10P1B
Abstract: 2SK2733 K2733 
 | Original | 2SK2733 2-10P1B 2SK2733 K2733 | |
| K2733
Abstract: 2-10P1B 2SK2733 
 | Original | 2SK2733 K2733 2-10P1B 2SK2733 | |
| 2-10P1B
Abstract: 2SK2841 K2841 
 | Original | 2SK2841 2-10P1B 2SK2841 K2841 | |
| Cree SiC MOSFETContextual Info: CAS300M17BM2 1.7kV, 8.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode 1.7 kV RDS on 8.0 mΩ Esw, Total @ 300A, 150 ˚C Features • • • • • • • VDS Package 23.7 mJ 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation | Original | CAS300M17BM2 106mm CPWR-AN12, CPWR-AN13] CAS300M17BM2 Cree SiC MOSFET | |
| ixzr08n120aContextual Info: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS on | Original | IXZR08N120 IXZR08N120A/B dsIXZR08N120A/B ixzr08n120a | |
| MS6511
Abstract: MS5151 Microwave detector diodes 18 GHz Microwave detector diodes MS5121 MS5531 MS5221 MS5211 MS5321 MS6111 
 | OCR Scan | MS5111 MS5121 MS5131 MS5141 MS5151 MS5211 MS5221 MS5231 MS5241 MS5251 MS6511 Microwave detector diodes 18 GHz Microwave detector diodes MS5531 MS5211 MS5321 MS6111 | |
| 2SK2493
Abstract: K2493 
 | Original | 2SK2493 2SK2493 K2493 | |