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"Indicator Lamps"

Abstract: 85122 LED water level indicator using 4 led LED NIGHT LAMP CIRCUIT Indicator Lamps mil grade LED lamps Oxley Group str 1229 2STR/LH23 night vision led
Contextual Info: LED Characteristics Product Selection Chart z OXL/MIL50/- 5.0 67 z z z z z z OXL/CLH/63/- 6.35 66 z z z OXL/CLH/63/P/- 6.35 66 z z z PS/LH/8/- 8.0 68 z z z z STR/LH/8/- 8.0 68 z z z z z STR/5/LH/8/- 8.0 68 z STR/501/LH/8/- 8.0 68 z STR/NLH/- 8.0 68 OXL/CLH/80/-

crystal 27 hc52

Abstract: QUARTZ hc52 71-XX
Contextual Info: HC-52/U Quartz Crystal Units AT-Cut, 5 - 300 MHz Options Package Height: 8.0 3.8 X HC - 5 2 / U: 8.8 HC - 5 2 / 8 mm: 8.0 HC - 5 2 / 6 mm: 6.0 Z Y 7.0 Y 2.3 2.3 2.3 Z 3.3 3.3 3.3 Adder to PartNr. XS 71xxA XS 71xxB HC - 5 2 / 6 mm: starting with 15MHz X DIN 45110:

k2952

Abstract: 2SK2952
Contextual Info: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Unit: mm Chopper Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC

Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 70 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC 0.012 Ω

E E Elektronik GmbH

Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 70 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC 0.012 Ω

HA 12058

Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT - 10 G H z • LOW NOISE FIGURE: 1.7 dB at 2 G H z 2.6 dB at 4 G H z • HIGH ASSOCIATED GAIN: 12.5 dB at 2 G H z 8.0 dB at 4 G H z • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

K2841

Abstract: 2-10P1B 2SK2841
Contextual Info: 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2841 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.)

MS6511

Abstract: MS5151 Microwave detector diodes 18 GHz Microwave detector diodes MS5121 MS5531 MS5221 MS5211 MS5321 MS6111
Contextual Info: 65 SCHOTTKY DIODES PART NUMBER 4 z |F fi NF (db) TEST F R EQ UENC Y VSWR MICROWAVE M IXER DIODES MS5111 MS5121 MS5131 8.0 7.5 7.0 150 300 150-300 150-300 2.3:1 2.3:1 2.0:1 MS5141 MS5151 MS5211 6.5 6.0 8.0 150-300 150-300 150 300 1.8:1 1.5:1 2.3:1 MS5221

Contextual Info: Monolithic crystal filter MQF21.4-1600/04 Application • 8 pol filter • i.f.- filter • use in mobile and stationary transceivers Characterstics Pass band Unit Value MHz dB kHz dB dB dB 21.4 ≤ 3.5 ± 8.0 ≤ 2.0 ≥ 70 > 90 Terminating impedance Z R1 | C1

MQF70

Contextual Info: Monolithic crystal filter MQF70.0-1000/08 Application • 6 pol filter • i.f.- filter • use in mobile and stationary transceivers Characterstics Pass band Unit Value MHz dB kHz dB dB dB dB 70.0 ≤ 8.0 ± 5.00 ≤ 1.0 ≥ 60 > 60 > 50 Terminating impedance Z

1S2075

Abstract: Hitachi DSA0045
Contextual Info: 1S2075 K Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-144C (Z) Rev.3 Dec. 2000 Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. Ordering Information

1S2075

Abstract: hitachi rev c K 2718 DSA003640
Contextual Info: 1S2075 K Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-144C (Z) Rev.3 Dec. 2000 Features • Low capacitance. (C = 3.5 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. Ordering Information

fc fc

Contextual Info: Monolithic crystal filter MQF15.3-1500/06 Application • 8 pol filter • i.f.- filter • use in mobile and stationary transceivers Unit Value MHz dB kHz dB dB dB dB 15.3 ± 600 Hz ≤ 3.0 ± 7.25.8.0 ≤ 2.0 ≥ 70 > 90 > 80 Terminating impedance Z R1 | C1

1S2076 equivalent

Abstract: 1S2076 DSA003640
Contextual Info: 1S2076 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-145B Z Rev.2 Oct. 2000 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. Ordering Information Type No.

1S2076A

Abstract: 1S2076A equivalent HITACHI 1S2076A DSA003640
Contextual Info: 1S2076A Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-146B Z Rev.2 Oct. 2000 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 8.0 ns max) • High reliability with glass seal. Ordering Information Type No.

RF Electronics

Abstract: DME4-18
Contextual Info: "1 # • I EVEN HARMONIC MICROWAVE MIXER MODEL DME4-18 4 -1 8 G H z Even Harmonic Mixer 8.0 dB Typical Midband Conversion Loss 60 dB Typical Midband L-R Isolation Guaranteed Specifications* From -5 5 °C to +85°C Frequency Range Conversion Loss* Isolation

DMB2-18A

Abstract: da 218
Contextual Info: V •1 MODEL BIASABLE MICROWAVE MIXER D M B 2 -1 8 A 2 -1 8 G H z 8.0 dB Typical Midband Conversion Loss 25 dB Typical Midband L-R Isolation Guaranteed Specifications' From -5 5 °C to +85°C Frequency Range Conversion Loss* * Isolation RF, LO Ports IF Port

Contextual Info: HM62P1321 Series 32768-word x 32-bit Synchronous Fast Static RAM with Burst Counter and Pipelined Data Output HITACHI ADE-203-753 Z Preliminary Rev.0.0 Mar. 6, 1997 Features • 3.3 V core power supply • 2.5 V I/O power supply • Fast clock access time: 8.0 ns (max)

Contextual Info: February 1998 Edition 1.0 PRELIMINARY FUJITSU Z DATA SHEET MB86612 IEEE 1394 Serial Bus Controller A V /C -o v e r-1394 DESCRIPTION Fujitsu MB86612 is a high-performance 1394 serial bus controller device conforming to IEEE1394 standard (IEEE1394-1995), Revision 8.0 Ver.2. It has dual interface ports with differ­

k2952

Abstract: JEITA SC-67 85a3 2SK2952
Contextual Info: 2SK2952 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2952 ○ スイッチングレギュレータ 単位: mm : RDS (ON) = 0.4 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 8.0 S (標準)