Z 5V1 Search Results

BZV55C Series

Abstract: sod-80 zener diode color band BZV55C ZENER DIODE 6V8
Contextual Info: BZV55C Series 500 mW Sealed Glass Zener Voltage Regulators Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z z z z z z Zener Voltage Range 2.0 to 75 Volts Mini-MELF Package Surface Device Type Mounting

BZV55B Series

Abstract: sod-80 zener diode color band BZV55B ZENER 6V2 MINIMELF BZV55-B ZENER DIODE 6V8
Contextual Info: BZV55B Series 500 mW Sealed Glass Zener Voltage Regulators Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z z z z z z Zener Voltage Range 2.4 to 75 Volts Mini-MELF Package Surface Device Type Mounting

zener diode bzy88

Abstract: D814A DIODE BZX61 D815A BZY88 BZX61 ZENER DIODE 2.7V 1W BZY88C4V7 BZY88C5V1 KS156A
Contextual Info: Electronic Valves 48 Z & l AeroServices Ltd London England 1972-73 Z e n e r D io d e s B ZX61 series 0.20 D 814V 0.15 D816G 0.35 O A Z 204 0.25 Z2A27C F 0.30 B Z X 7 0 series 0.25 D 815A 0.35 D 816V 0.35 O A Z 205 0,25 Z2A30CF 0.30 O A Z 20 6 O A Z 24 0 O A Z 24 2

415 6V8

Abstract: Zener Diode BZx 84 46-C4V7 ZENER bzx 46 c 20 zener BZX 4v7 zener BZX 5V1 ABZX46-C ZENER bzx 55 c ZENER bzx 46 c
Contextual Info: zener diodes diodes zener thom son-csf Type» VZT / 'ZT* max min V 500 mW / Tamb A BZX 46-C 2V7 ABZX46-C 3V0 ABZX46-C3V3 A B Z X 46-C 3V6 ABZX46-C 3V9 A B Z X 46-C 4V3 A B Z X 46-C 4V7 A B Z X 46-C 5V1 A BZX 46-C 5V6 A B Z X 46-C 6V2 A BZX 46-C 6V8 A BZX 46-C 7V5

bzx 180

Abstract: 83c 5v1 550 3V9 BZX 110 bzx 62 BZX83 BZX 120 55C 2v4 83C0V8 bzx 550 4v7
Contextual Info: Types V Z T / 'Z T * V min rZ T /|Z T * (n ) max 'Z T (m A) •ZK (m A) a V z 2,5 typ 1 0 00 0,5 V r f/iA) IV ) Tam b 25 °C •ZM Im A) ^am b 150 o c 6,4 0,09 5,9 0,1 2,5 2,5 Ir /V r ( % / °C) max max B Z X 55-C 68 rZ K (ni 1500 0,5 0,09 0,1 5.3 2 0 0 0 0,5

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC514400J/Z-80, TC514400J / Z - 10 DESCRIPTION The TC514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400J/Z utilizes T0SHI3A's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and

IJM2220

Abstract: NJM2220 NJM2230 759i
Contextual Info: NJM2220/2230 NJM2220/2230li. VTR, TV, • it • • WB is it £ 7 X m ^ < n ^ & R V £ , i i Z ' m ] T i> I C T 'T o £ 'r * * iS 7 & m z M % Z n < 8 t Z / ^ 7 T 'r VTR, X + 4 .5 V — t- 13V DMP-8, SIP-9 ^ ae NJMZ220S NJM2230M 50 S c> 5 il# 1 . M M N fJE ftliS

Contextual Info: SGS-THOMSON SURFACE MOUNT DEVICES ^ 7# Ü O M tH LIO TûK » GENERAL PURPOSE & INDUSTRIAL ZENER DIODES Type V ZT /IZT * rZ T ''Z T * 'Z T * 'z k ^zk “ VZ |R I V r T am b 25°C min max max 1 j max mA = (Í2) (mA) max max (10-4/°C ) •ZM >ZSM (V) (mA)

BZV 400

Abstract: bzv 06 bzv 400 5v6 k3 bzv 46 bzv 4v7 bzv 40 zener 6v8 CB-210 47c36 ZENER DIODES BZV 40 C 8V2
Contextual Info: zener diodes diodes zener Types THOMSON-CSF Vz t /Iz t * m in m ax V T Z T /'Z T m ax 'Z T ocvz typ Ir /V r m ax Vr •ZM Ci) (m A ) (% /°C ) (nA) (V) (m A ) 2 W / Tamb = 50°C Tj max = 175°C BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47 BZV 47

Contextual Info: MM3Z2V4 . MM3Z47 200 mW MM3Z2V4 . MM3Z47 (200 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-04-11 Maximum power dissipation Maximale Verlustleistung 1.7±0.1 1±0.1 Nominal Z-voltage – Nominale Z-Spannung

sic 6822 h

Abstract: SI 6822 sg 6822 6822 si D052 d030 1102 d3pf BU212 tr/BU2120CH-3W
Contextual Info: ROHM CO LT D 40E D H 7 öSflcm G 0 0 3 ci44 I C / I C s for Industrial Equipment B Ü J I2 1 2 J J C H - 3 W Ï BU2120CH-3W % Z Z Z • W ë'tfîÉEl/'D im ensio ns •v-^ i,7>)> l^ -y KIBHffl IC v t 01 ?y 3 SRHH ; ' Unit : mm) 7T'64ti ■y h E t t - P Ä S t o

Contextual Info: N a t i o n a l S e mi c on d u c t j r D 9 ro CLC425 Ul t ra L o w N o i s e W i d e b a n d Op A m p (A CD General Description Features The C LC 425 com bines a w ide bandw idth (1.9G H z G B W ) w ith very low input noise (1.05n V/VH z, 1 .6p A/VH z) and low d c e rro rs (1 OOjiV

bzx 2v7

Abstract: 7BZX C2V7 BZX46C
Contextual Info: BZX 46 C 2V7. .B ZX 46 C 43 Z - D IO DES Epi Z Involucro JEDEC DO-35 Outline S5J - J V . »•< v I— - I - 4'5 . ! Pz max = 500 m W y ZT. Misure In mm. - Peso 0,15 gr. = 2,7 a 43 V Dimensions in mm- - Weight 0,15 gr. BZX Stampigliatura : anello dalla parte del

bzv48c

Abstract: 48C30 AICB ZENER DIODES BZV 48 5V1 bzv 46 BZV48C3V3 BZV48C68 ZENER DIODES BZV 48 BZV48C200 BZV48C3V6
Contextual Info: S S ' ïC G S-THOMSON O T H O M S O N ’C S F D 1 DT _59C .02452 0002452 ^ U 'IS B Z V 48 C 3 V 3 — B Z V 48 C 200 DIVISION SEMICONDUCTEURS ZENER DIODES DIODES ZENER 5 W hermetically sealed plastic silicon Zener diodes offering the following advantages :

bzv 4v7

Abstract: bzv 6v8 ZENER DIODES BZV 85 8V2 5W ZENER DIODES BZV 85 8V2 bzv 4v3 5W zener sgs-thomson 58C18 ZENER DIODES BZV 48 ZENER DIODES BZV 85 ZENER DIODES BZV 48 5V1
Contextual Info: n=Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MD K© l[LIÊTO(S !ii!lD@i ZENER DIODES STANDARD ZENER DIODES Type V Z T 'IZ T * min rZT 1 'ZT* max 5W max (Î2) (V) <"»A) / Tam b = 50°C Tj max = 175°C BZV 58 C 3V3 BZV 58 C 3V6 BZV 58 C 3V9 BZV 58 C 4V3

bzv16c

Abstract: 18516 bzv 4v7 BZV18 BZV16C200 BZV16C3V3 DEZ18516 bzv 40 16c68 e6v2
Contextual Info: S G STC S —THOMSON O TH0MS0N-C5F 59C 024-44 D | 7=^237 0002444 D B Z V 16 C 3V3 —- BZV16C200 DIVISION SEM ICO N D UCTEURS • ZENER DIODES DIODES ZENER 3 W silicon Z e n e r diodes, hermetically sealed metal according to normalization C C T U : F 61 offering the follow ingadvantages :

BZY85C

Abstract: DIODE BZy 83 bzy85 c15 bzy85 BZY85C15 BZY85/C15 C8V2 DIODE BZY83/C5V6 C24 06 85 d8v2
Contextual Info: BZY83C, BZY83D, BZY85C, BZY85D Silicon Z-diodes Silicon Z-diodes type BZY 83 and BZY 85 are available w ith 5% tolerance C and 10% tolerance (D). BZY 83 is provided w ith a metal case 1 A 2 DIN 41871 and may be operated in free air as well as mounted on a chassis w ith a cooling fin (heat

zener BZX 86

Abstract: zener BZX 5V1 1620 P bZX C18 bzx 64 c47 zener BZX 4v7 BZX85B bzx c12 bzx85a zener BZX
Contextual Info: rZ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MO [^©[l[LiÊTO [ü!ID©i ZENER DIODES PREFERRED SERIES PRO-ELECTRON SERIES CECC APPROVAL STANDARD ZENER DIODES Type V Z T 'IZ T * min rZT 1 'Z T * m ax max P P P P P P P P P P P P P P P P P P P P P P P

bzv 06

Abstract: bzv 4v7 ZENER DIODES BZV 48 bzv 46 bzv 40 ZENER DIODES BZV 48 5V1 bzv 4v3 BZV48C13 ZENER DIODES BZV 85 8V2 zener 6v8
Contextual Info: y zener diodes diodes zener 1H0MS0N-CSF Types Tamb Il / Tj max 3,1 3 ,4 3 ,7 4 ,0 4 ,4 3 ,5 3 ,8 ' z t / 'z t m ax 'ZT Q (m A) = 175°C ocvz typ (%/°C) •r / V r m ax A) Vr ■ZM (V) (mA) C ase V F < 1 ,2 V < T am b = 25°C, lF = 0,3A) P § (10 m i) = 200 W

ZENER DIODES BZV 40 C 8V2

Abstract: ZENER DIODES BZV 85 8V2 zener 5v6 BZV 400 ZENER DIODES BZV 48 5V1 bzv 41 47C30 ZENER DIODES BZV 48 diode 47c ZENER DIODES BZV 85
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MOeGœiLtiCTÔÂBÊS ZENER DIODES STANDARD ZENER DIODES Type Vz t 'Iz t * rZ T ''Z T * 'Z T * “ VZ I r 'V r Vr •ZM P ackage Tam b 7 0 °C m in m ax !2 (V) 2W P P P P P P P P P P P P P P P P P P P P P BZV

BZX85

Contextual Info: _BZX85CVishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Sharp edge in reverse characteristics • Low reverse current • Low noise • Very high stability • Available with tighter tolerances Applications

R 156 35K 113

Abstract: L6839 LBB82 106 35K 850 L6ss L8824 L6647 L1117 L6B11 L6B12
Contextual Info: SEMITRON I N D U S T R I E S LTD 43E D ôlSTfla^ OOOOlbS 0 B S L C B - r - u -z > SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5V1 to 200 Volts 75 Watt Steady State ■ 5 KWatt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

bzx55b

Abstract: 85604
Contextual Info: viSHAY _ BZX55B. Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Low noise • Very high stability • Available with tighter tolerances

Contextual Info: _ TZMC. Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications